Nicolas J. Moll

Person

Woodside, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Nanostructures and methods of making the same
- Patent number 7,052,618
- Issue date May 30, 2006
- Agilent Technologies, Inc.
- Nicolas J. Moll
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium arsenide antimonide (GaAsSB)/indium phosphide (InP) heteroj...
- Patent number 6,992,337
- Issue date Jan 31, 2006
- Agilent Technologies, Inc.
- Sandeep Bahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for planarizing a substrate surface having a non-...
- Patent number 6,949,008
- Issue date Sep 27, 2005
- Agilent Technologies, Inc.
- Nicolas J. Moll
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction semiconductor device having an intermediate layer fo...
- Patent number 6,822,274
- Issue date Nov 23, 2004
- Agilent Technologies, Inc.
- Sung Soo Yi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin gallium-arsenide-antimonide base heterojunction bipolar transi...
- Patent number 6,762,480
- Issue date Jul 13, 2004
- Agilent Technologies, Inc.
- Nicolas J. Moll
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor (HBT) having an improved emitter-...
- Patent number 6,696,710
- Issue date Feb 24, 2004
- Agilent Technologies, Inc.
- Nicolas J. Moll
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
System and method for controlling the size and/or distribution of c...
- Publication number 20080032238
- Publication date Feb 7, 2008
- Jennifer Q. Lu
- B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
Information Patent Application
Field effect transistor having a carrier exclusion layer
- Publication number 20060102931
- Publication date May 18, 2006
- Thomas Edward Kopley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
System and method for growing nanostructures from a periphery of a...
- Publication number 20060084570
- Publication date Apr 20, 2006
- Thomas E. Kopley
- B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
Information Patent Application
System and method for controlling nanostructure growth
- Publication number 20060060863
- Publication date Mar 23, 2006
- Jennifer Lu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Gallium arsenide antimonide (GaAsSb)/Indium phosphide (InP) heteroj...
- Publication number 20050218428
- Publication date Oct 6, 2005
- Sandeep Bahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nanostructures and methods of making the same
- Publication number 20050164132
- Publication date Jul 28, 2005
- Nicolas J. Moll
- B82 - NANO-TECHNOLOGY
Information Patent Application
Heterojunction semiconductor device having an intermediate layer fo...
- Publication number 20040149994
- Publication date Aug 5, 2004
- Sung Soo Yi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thin gallium-arsenide-antimonide base heterojunction bipolar transi...
- Publication number 20040104403
- Publication date Jun 3, 2004
- Nicolas J. Moll
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thin gallium-arsenide-antimonide base heterojunction bipolar transi...
- Publication number 20020145137
- Publication date Oct 10, 2002
- Nicolas J. Moll
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Heterojunction bipolar transistor (HBT) having an improved emitter-...
- Publication number 20020117657
- Publication date Aug 29, 2002
- Nicolas J. Moll
- H01 - BASIC ELECTRIC ELEMENTS

Nicolas J. Moll

Person

Patents Grantslast 30 patents

Nanostructures and methods of making the same

Gallium arsenide antimonide (GaAsSB)/indium phosphide (InP) heteroj...

System and method for planarizing a substrate surface having a non-...

Heterojunction semiconductor device having an intermediate layer fo...

Thin gallium-arsenide-antimonide base heterojunction bipolar transi...

Heterojunction bipolar transistor (HBT) having an improved emitter-...

Patents Applicationslast 30 patents

System and method for controlling the size and/or distribution of c...

Field effect transistor having a carrier exclusion layer

System and method for growing nanostructures from a periphery of a...

System and method for controlling nanostructure growth

Gallium arsenide antimonide (GaAsSb)/Indium phosphide (InP) heteroj...

Nanostructures and methods of making the same

Heterojunction semiconductor device having an intermediate layer fo...

Thin gallium-arsenide-antimonide base heterojunction bipolar transi...

Thin gallium-arsenide-antimonide base heterojunction bipolar transi...

Heterojunction bipolar transistor (HBT) having an improved emitter-...