Nigel G. Cave

Person

Saratoga Springs, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Nanosheet field effect transistor with spacers between sheets
- Patent number 11,101,348
- Issue date Aug 24, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Ruilong Xie
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Contact interlayer dielectric replacement with improved SAC cap ret...
- Patent number 11,024,536
- Issue date Jun 1, 2021
- International Business Machines Corporation
- Adra Carr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around transistor with spacer support and methods of formi...
- Patent number 10,734,525
- Issue date Aug 4, 2020
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming conductive spacers for gate contacts and the res...
- Patent number 10,504,790
- Issue date Dec 10, 2019
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contacting source and drain of a transistor device
- Patent number 10,468,300
- Issue date Nov 5, 2019
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tall single-fin FIN-type field effect transistor structures and met...
- Patent number 10,411,010
- Issue date Sep 10, 2019
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with H-shaped or U-shaped channels and method for formi...
- Patent number 10,381,459
- Issue date Aug 13, 2019
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure, gate all-around integrated circuit st...
- Patent number 10,290,549
- Issue date May 14, 2019
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming TS cut for zero or negative TS extension and resulting device
- Patent number 10,249,535
- Issue date Apr 2, 2019
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air-gap gate sidewall spacer and method
- Patent number 10,249,728
- Issue date Apr 2, 2019
- GLOBALFOUNDRIES Inc.
- Daniel Chanemougame
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods, apparatus and system for forming wrap-around contact with...
- Patent number 10,236,218
- Issue date Mar 19, 2019
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming an air gap adjacent a gate of a transistor and a...
- Patent number 10,211,100
- Issue date Feb 19, 2019
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming a semiconductor device with a gate contact posit...
- Patent number 10,204,994
- Issue date Feb 12, 2019
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air-gap gate sidewall spacer and method
- Patent number 10,026,824
- Issue date Jul 17, 2018
- GLOBALFOUNDRIES Inc.
- Daniel Chanemougame
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin patterning for a fin-type field-effect transistor
- Patent number 9,978,608
- Issue date May 22, 2018
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming a gate contact for a transistor above an active...
- Patent number 9,947,589
- Issue date Apr 17, 2018
- GLOBALFOUNDRIES Inc.
- Chanro Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tall single-fin fin-type field effect transistor structures and met...
- Patent number 9,929,157
- Issue date Mar 27, 2018
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CONTACT INTERLAYER DIELECTRIC REPLACEMENT WITH IMPROVED SAC CAP RET...
- Publication number 20200335392
- Publication date Oct 22, 2020
- International Business Machines Corporation
- Adra Carr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET FIELD EFFECT TRANSISTOR WITH SPACERS BETWEEN SHEETS
- Publication number 20200035786
- Publication date Jan 30, 2020
- Ruilong Xie
- B82 - NANO-TECHNOLOGY
Information Patent Application
GATE-ALL-AROUND TRANSISTOR WITH SPACER SUPPORT AND METHODS OF FORMI...
- Publication number 20190288117
- Publication date Sep 19, 2019
- GLOBALFOUNDRIES INC.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH H-SHAPED OR U-SHAPED CHANNELS AND METHOD FOR FORMI...
- Publication number 20190214482
- Publication date Jul 11, 2019
- GLOBALFOUNDRIES INC.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED GATE ISOLATION
- Publication number 20190139830
- Publication date May 9, 2019
- GLOBALFOUNDRIES INC.
- Ruilong XIE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT TO SOURCE/DRAIN REGIONS AND METHOD OF FORMING SAME
- Publication number 20190081145
- Publication date Mar 14, 2019
- GLOBALFOUNDRIES INC.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE, GATE ALL-AROUND INTEGRATED CIRCUIT ST...
- Publication number 20190074224
- Publication date Mar 7, 2019
- GLOBALFOUNDRIES INC.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING CONDUCTIVE SPACERS FOR GATE CONTACTS AND THE RES...
- Publication number 20190035692
- Publication date Jan 31, 2019
- GLOBALFOUNDRIES INC.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACTING SOURCE AND DRAIN OF A TRANSISTOR DEVICE
- Publication number 20190013241
- Publication date Jan 10, 2019
- GLOBALFOUNDRIES INC.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING A SEMICONDUCTOR DEVICE WITH A GATE CONTACT POSIT...
- Publication number 20180286956
- Publication date Oct 4, 2018
- GLOBALFOUNDRIES INC.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING AN AIR GAP ADJACENT A GATE OF A TRANSISTOR AND A...
- Publication number 20180277430
- Publication date Sep 27, 2018
- GLOBALFOUNDRIES INC.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AIR-GAP GATE SIDEWALL SPACER AND METHOD
- Publication number 20180240883
- Publication date Aug 23, 2018
- GLOBALFOUNDRIES INC.
- DANIEL CHANEMOUGAME
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING TS CUT FOR ZERO OR NEGATIVE TS EXTENSION AND RESULTING DEVICE
- Publication number 20180233412
- Publication date Aug 16, 2018
- GLOBALFOUNDRIES INC.
- Ruilong XIE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AIR-GAP GATE SIDEWALL SPACER AND METHOD
- Publication number 20180204927
- Publication date Jul 19, 2018
- GLOBALFOUNDRIES INC.
- DANIEL CHANEMOUGAME
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TALL SINGLE-FIN FIN-TYPE FIELD EFFECT TRANSISTOR STRUCTURES AND MET...
- Publication number 20180182757
- Publication date Jun 28, 2018
- GLOBALFOUNDRIES INC.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN PATTERNING FOR A FIN-TYPE FIELD-EFFECT TRANSISTOR
- Publication number 20180082852
- Publication date Mar 22, 2018
- GLOBALFOUNDRIES INC.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS

Nigel G. Cave

Person

Patents Grantslast 30 patents

Nanosheet field effect transistor with spacers between sheets

Contact interlayer dielectric replacement with improved SAC cap ret...

Gate-all-around transistor with spacer support and methods of formi...

Methods of forming conductive spacers for gate contacts and the res...

Contacting source and drain of a transistor device

Tall single-fin FIN-type field effect transistor structures and met...

Transistors with H-shaped or U-shaped channels and method for formi...

Integrated circuit structure, gate all-around integrated circuit st...

Forming TS cut for zero or negative TS extension and resulting device

Air-gap gate sidewall spacer and method

Methods, apparatus and system for forming wrap-around contact with...

Methods of forming an air gap adjacent a gate of a transistor and a...

Methods of forming a semiconductor device with a gate contact posit...

Air-gap gate sidewall spacer and method

Fin patterning for a fin-type field-effect transistor

Methods of forming a gate contact for a transistor above an active...

Tall single-fin fin-type field effect transistor structures and met...

Patents Applicationslast 30 patents

CONTACT INTERLAYER DIELECTRIC REPLACEMENT WITH IMPROVED SAC CAP RET...

NANOSHEET FIELD EFFECT TRANSISTOR WITH SPACERS BETWEEN SHEETS

GATE-ALL-AROUND TRANSISTOR WITH SPACER SUPPORT AND METHODS OF FORMI...

TRANSISTORS WITH H-SHAPED OR U-SHAPED CHANNELS AND METHOD FOR FORMI...

SELF-ALIGNED GATE ISOLATION

CONTACT TO SOURCE/DRAIN REGIONS AND METHOD OF FORMING SAME

INTEGRATED CIRCUIT STRUCTURE, GATE ALL-AROUND INTEGRATED CIRCUIT ST...

METHODS OF FORMING CONDUCTIVE SPACERS FOR GATE CONTACTS AND THE RES...

CONTACTING SOURCE AND DRAIN OF A TRANSISTOR DEVICE

METHODS OF FORMING A SEMICONDUCTOR DEVICE WITH A GATE CONTACT POSIT...

METHODS OF FORMING AN AIR GAP ADJACENT A GATE OF A TRANSISTOR AND A...

AIR-GAP GATE SIDEWALL SPACER AND METHOD

FORMING TS CUT FOR ZERO OR NEGATIVE TS EXTENSION AND RESULTING DEVICE

AIR-GAP GATE SIDEWALL SPACER AND METHOD

TALL SINGLE-FIN FIN-TYPE FIELD EFFECT TRANSISTOR STRUCTURES AND MET...

FIN PATTERNING FOR A FIN-TYPE FIELD-EFFECT TRANSISTOR