Nikolaos Bekiaris

Person

Campbell, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method of dielectric material fill and treatment
- Patent number 12,046,508
- Issue date Jul 23, 2024
- Applied Materials, Inc.
- Shi You
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal based hydrogen barrier
- Patent number 12,020,982
- Issue date Jun 25, 2024
- Applied Materials, Inc.
- Srinivas Gandikota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and apparatus for processing a substrate
- Patent number 11,955,333
- Issue date Apr 9, 2024
- Applied Materials, Inc.
- Jethro Tannos
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Multi-step process for flowable gap-fill film
- Patent number 11,901,222
- Issue date Feb 13, 2024
- Applied Materials, Inc.
- Maximillian Clemons
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of dielectric material fill and treatment
- Patent number 11,615,984
- Issue date Mar 28, 2023
- Applied Materials, Inc.
- Shi You
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gap fill deposition process
- Patent number 11,101,174
- Issue date Aug 24, 2021
- Applied Materials, Inc.
- Hao Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced cobalt agglomeration resistance and gap-fill performance b...
- Patent number 11,043,415
- Issue date Jun 22, 2021
- Applied Materials, Inc.
- Zhiyuan Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Microwave anneal to improve CVD metal gap-fill and throughput
- Patent number 10,438,849
- Issue date Oct 8, 2019
- Applied Materials, Inc.
- He Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced cobalt agglomeration resistance and gap-fill performance b...
- Patent number 10,410,918
- Issue date Sep 10, 2019
- Applied Materials, Inc.
- Zhiyuan Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cobalt resistance recovery by hydrogen anneal
- Patent number 9,711,397
- Issue date Jul 18, 2017
- Applied Materials, Inc.
- Nikolaos Bekiaris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cobalt resistance recovery by hydrogen anneal
- Patent number 9,570,345
- Issue date Feb 14, 2017
- Applied Materials, Inc.
- Nikolaos Bekiaris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating an ultra low-k dielectric self-aligned via
- Patent number 8,992,792
- Issue date Mar 31, 2015
- Applied Materials, Inc.
- Chih-Yang Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ionic additives for extreme low dielectric constant chemical formul...
- Patent number 7,265,062
- Issue date Sep 4, 2007
- Applied Materials, Inc.
- Robert P. Mandal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of ALD/CVD barriers with porous low k materials
- Patent number 7,244,683
- Issue date Jul 17, 2007
- Applied Materials, Inc.
- Hua Chung
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of forming a dual damascene structure utilizing a three laye...
- Patent number 7,226,853
- Issue date Jun 5, 2007
- Applied Materials, Inc.
- Nikolaos Bekiaris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of photoresist removal in the presence of a dielectric layer...
- Patent number 6,991,739
- Issue date Jan 31, 2006
- Applied Materials, Inc.
- Mark N. Kawaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ionic additives for extreme low dielectric constant chemical formul...
- Patent number 6,896,955
- Issue date May 24, 2005
- Air Products and Chemicals, Inc.
- Robert P. Mandal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mesoporous films having reduced dielectric constants
- Patent number 6,818,289
- Issue date Nov 16, 2004
- Air Products and Chemicals, Inc.
- James Edward MacDougall
- C08 - ORGANIC MACROMOLECULAR COMPOUNDS THEIR PREPARATION OR CHEMICAL WORKING-...
Information Patent Grant
Method of forming a dual damascene structure using an amorphous sil...
- Patent number 6,806,203
- Issue date Oct 19, 2004
- Applied Materials Inc.
- Timothy Weidman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mesoporous films having reduced dielectric constants
- Patent number 6,592,980
- Issue date Jul 15, 2003
- Air Products and Chemicals, Inc.
- James Edward MacDougall
- C08 - ORGANIC MACROMOLECULAR COMPOUNDS THEIR PREPARATION OR CHEMICAL WORKING-...
Information Patent Grant
Ionic additives for extreme low dielectric constant chemical formul...
- Patent number 6,576,568
- Issue date Jun 10, 2003
- Applied Materials, Inc.
- Robert P Mandal
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF DIELECTRIC MATERIAL FILL AND TREATMENT
- Publication number 20240379420
- Publication date Nov 14, 2024
- Applied Materials, Inc.
- Shi YOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL BASED HYDROGEN BARRIER
- Publication number 20240194526
- Publication date Jun 13, 2024
- Applied Materials, Inc.
- Srinivas Gandikota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-STEP PROCESS FOR FLOWABLE GAP-FILL FILM
- Publication number 20240128121
- Publication date Apr 18, 2024
- Applied Materials, Inc.
- Maximillian CLEMONS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF DIELECTRIC MATERIAL FILL AND TREATMENT
- Publication number 20230187276
- Publication date Jun 15, 2023
- Applied Materials, Inc.
- Shi YOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND APPARATUS FOR PROCESSING A SUBSTRATE
- Publication number 20220298636
- Publication date Sep 22, 2022
- Soham Sunjay ASRANI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHODS AND APPARATUS FOR PROCESSING A SUBSTRATE
- Publication number 20220301867
- Publication date Sep 22, 2022
- Applied Materials, Inc.
- Jethro TANNOS
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHODS AND APPARATUS FOR PROCESSING A SUBSTRATE
- Publication number 20220230887
- Publication date Jul 21, 2022
- Meiyee SHEK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL BASED HYDROGEN BARRIER
- Publication number 20220157654
- Publication date May 19, 2022
- Applied Materials, Inc.
- Srinivas Gandikota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF DIELECTRIC MATERIAL FILL AND TREATMENT
- Publication number 20210317580
- Publication date Oct 14, 2021
- Applied Materials, Inc.
- Shi YOU
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
MULTI-STEP PROCESS FOR FLOWABLE GAP-FILL FILM
- Publication number 20210257252
- Publication date Aug 19, 2021
- Applied Materials, Inc.
- Maximillian CLEMONS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAP FILL DEPOSITION PROCESS
- Publication number 20210111067
- Publication date Apr 15, 2021
- Applied Materials, Inc.
- Hao JIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS TO IMPROVE INTERFACE STATE DENSITY Dit ON DEEP TRENCH ISOLA...
- Publication number 20210111222
- Publication date Apr 15, 2021
- Applied Materials, Inc.
- Philip Hsin-hua Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL BASED HYDROGEN BARRIER
- Publication number 20200373200
- Publication date Nov 26, 2020
- Applied Materials, Inc.
- Srinivas Gandikota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED COBALT AGGLOMERATION RESISTANCE AND GAP-FILL PERFORMANCE B...
- Publication number 20200235006
- Publication date Jul 23, 2020
- Applied Materials, Inc.
- Zhiyuan WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED COBALT AGGLOMERATION RESISTANCE AND GAP-FILL PERFORMANCE B...
- Publication number 20180211872
- Publication date Jul 26, 2018
- Applied Materials, Inc.
- Zhiyuan WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MICROWAVE ANNEAL TO IMPROVE CVD METAL GAP-FILL AND THROUGHPUT
- Publication number 20170309515
- Publication date Oct 26, 2017
- Applied Materials, Inc.
- He Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING AN ULTRA LOW-K DIELECTRIC SELF-ALIGNED VIA
- Publication number 20140024220
- Publication date Jan 23, 2014
- Chih-Yang Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integration of ALD/CVD barriers with porous low k materials
- Publication number 20040256351
- Publication date Dec 23, 2004
- Hua Chung
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Ionic additives for extreme low dielectric constant chemical formul...
- Publication number 20040087184
- Publication date May 6, 2004
- APPLIED MATERIALS INC., a Delaware corporation
- Robert P. Mandal
- C01 - INORGANIC CHEMISTRY
Information Patent Application
Method of forming a dual damascene structure using an amorphous sil...
- Publication number 20030176058
- Publication date Sep 18, 2003
- Applies Materials, Inc.
- Timothy Weidman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Mesoporous films having reduced dielectric constants
- Publication number 20030157311
- Publication date Aug 21, 2003
- James Edward MacDougall
- C08 - ORGANIC MACROMOLECULAR COMPOUNDS THEIR PREPARATION OR CHEMICAL WORKING-...
Information Patent Application
Method of forming a dual damascene structure
- Publication number 20030119307
- Publication date Jun 26, 2003
- Applied Materials, Inc.
- Nikolaos Bekiaris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of photoresist removal in the presence of a dielectric layer...
- Publication number 20030075524
- Publication date Apr 24, 2003
- APPLIED MATERIALS, INC.
- Mark N. Kawaguchi
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
Ionic additives for extreme low dielectric constant chemical formul...
- Publication number 20030008525
- Publication date Jan 9, 2003
- Applied Materials Inc.
- Robert P. Mandal
- C01 - INORGANIC CHEMISTRY
Information Patent Application
Ionic additives for extreme low dielectric constant chemical formul...
- Publication number 20020042210
- Publication date Apr 11, 2002
- Robert P. Mandal
- C01 - INORGANIC CHEMISTRY

Nikolaos Bekiaris

Person

Patents Grantslast 30 patents

Method of dielectric material fill and treatment

Metal based hydrogen barrier

Methods and apparatus for processing a substrate

Multi-step process for flowable gap-fill film

Method of dielectric material fill and treatment

Gap fill deposition process

Enhanced cobalt agglomeration resistance and gap-fill performance b...

Microwave anneal to improve CVD metal gap-fill and throughput

Enhanced cobalt agglomeration resistance and gap-fill performance b...

Cobalt resistance recovery by hydrogen anneal

Cobalt resistance recovery by hydrogen anneal

Method of fabricating an ultra low-k dielectric self-aligned via

Ionic additives for extreme low dielectric constant chemical formul...

Integration of ALD/CVD barriers with porous low k materials

Method of forming a dual damascene structure utilizing a three laye...

Method of photoresist removal in the presence of a dielectric layer...

Ionic additives for extreme low dielectric constant chemical formul...

Mesoporous films having reduced dielectric constants

Method of forming a dual damascene structure using an amorphous sil...

Mesoporous films having reduced dielectric constants

Ionic additives for extreme low dielectric constant chemical formul...

Patents Applicationslast 30 patents

METHOD OF DIELECTRIC MATERIAL FILL AND TREATMENT

METAL BASED HYDROGEN BARRIER

MULTI-STEP PROCESS FOR FLOWABLE GAP-FILL FILM

METHOD OF DIELECTRIC MATERIAL FILL AND TREATMENT

METHODS AND APPARATUS FOR PROCESSING A SUBSTRATE

METHODS AND APPARATUS FOR PROCESSING A SUBSTRATE

METHODS AND APPARATUS FOR PROCESSING A SUBSTRATE

METAL BASED HYDROGEN BARRIER

METHOD OF DIELECTRIC MATERIAL FILL AND TREATMENT

MULTI-STEP PROCESS FOR FLOWABLE GAP-FILL FILM

GAP FILL DEPOSITION PROCESS

PROCESS TO IMPROVE INTERFACE STATE DENSITY Dit ON DEEP TRENCH ISOLA...

METAL BASED HYDROGEN BARRIER

ENHANCED COBALT AGGLOMERATION RESISTANCE AND GAP-FILL PERFORMANCE B...

ENHANCED COBALT AGGLOMERATION RESISTANCE AND GAP-FILL PERFORMANCE B...

MICROWAVE ANNEAL TO IMPROVE CVD METAL GAP-FILL AND THROUGHPUT

METHOD OF FABRICATING AN ULTRA LOW-K DIELECTRIC SELF-ALIGNED VIA

Integration of ALD/CVD barriers with porous low k materials

Ionic additives for extreme low dielectric constant chemical formul...

Method of forming a dual damascene structure using an amorphous sil...

Mesoporous films having reduced dielectric constants

Method of forming a dual damascene structure

Method of photoresist removal in the presence of a dielectric layer...

Ionic additives for extreme low dielectric constant chemical formul...

Ionic additives for extreme low dielectric constant chemical formul...