Ning Hsieh

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San Jose, CA, US

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Patents Grantslast 30 patents

Information Patent Grant
Single transistor cell for electrically-erasable programmable read-...
- Patent number 4,878,101
- Issue date Oct 31, 1989
- Ning Hsieh
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of making high dielectric constant insulators and capacitors...
- Patent number 4,432,035
- Issue date Feb 14, 1984
- International Business Machines Corp.
- Ning Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication method for high conductivity, void-free polysilicon-sil...
- Patent number 4,389,257
- Issue date Jun 21, 1983
- International Business Machines Corporation
- Henry J. Geipel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dense electrically alterable read only memory
- Patent number 4,375,085
- Issue date Feb 22, 1983
- International Business Machines Corporation
- Gary D. Grise
- G11 - INFORMATION STORAGE