Rideout, V. L., "Reducing the Sheet Resistance of Polysilicon Lines in Integrated Circuits", IBM Tech. Disc. Bul., vol. 17, No. 6, pp. 1831-1833 (11-74). |
Baglin, J. E. et al., "Fabrication of Conductive Refractory Silicide-Doped Polysilicon Lines", IBM Tech. Discl. Bul., vol. 20, No. 10, p. 4189 (3-78). |
Howard, J. K. "Gate for MOS Devices: Rare Earth Silicides", IBM Tech. Discl. Bul., vol. 21, No. 7, pp. 2811-2813 (12-78). |
Zirinsky, S. et al., "Oxidation Mechanisms in WSi.sub.2 Thin Films", Appl. Phys. Lett., vol. 33, No. 1, 1 Jul. 1978, pp. 76-78. |
Crowder, B. L., et al., ". . . Metal Silicide Interconnection Technology--A Future Perspective", IEEE J. Sol-St. Cir., vol. SC-14, No. 2, pp. 291-293 (4-79). |
Murarka, S. P., "Refractory Silicides for Low Resistivity Gates and Interconnects", IEDM 1979, Tech. Dig. Paper 20.1, pp. 454-457 (12-03-79). |
Hsieh, N. et al., "Oxidation Induced Voids in Polysilicon/Silicide Films", Spring Meeting, Electrochem. Soc., vol. 80-1, Abs. 161, pp. 425-427 (5-11-80). |
Koburger, C. et al., "Electrical Properties of Composite Silicide Gate Electrodes", Spring Meeting, Electrochem. Sol., vol. 80-1, Abs. 162, pp. 428-430 (5-11-80). |