Norikatsu Koide

Person

Nagoya-shi, Aichi-ken, 463, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Nitride-based semiconductor light emitting device and manufacturing...
- Patent number 7,939,349
- Issue date May 10, 2011
- Sharp Kabushiki Kaisha
- Norikatsu Koide
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing gallium nitride compound semiconductor
- Patent number 7,619,261
- Issue date Nov 17, 2009
- Toyoda Gosei Co., Ltd.
- Norikatsu Koide
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride compound semiconductor
- Patent number 7,176,497
- Issue date Feb 13, 2007
- Toyoda Gosei Co., Ltd.
- Norikatsu Koide
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-based semiconductor light-emitting device and manufacturing...
- Patent number 7,154,125
- Issue date Dec 26, 2006
- Sharp Kabushiki Kaisha
- Norikatsu Koide
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting semiconductor device using gallium nitride compound...
- Patent number 7,045,809
- Issue date May 16, 2006
- Toyoda Gosei Co., Ltd.
- Hisaki Kato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a gallium nitride group compound semicondu...
- Patent number 6,984,536
- Issue date Jan 10, 2006
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for manufacturing a light-emitting device
- Patent number 6,962,828
- Issue date Nov 8, 2005
- Toyoda Gosei Co., Ltd.
- Norikatsu Koide
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing gallium nitride compound semiconductor
- Patent number 6,930,329
- Issue date Aug 16, 2005
- Toyoda Gosei Co., Ltd.
- Norikatsu Koide
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing gallium nitride group compound semiconductor
- Patent number 6,893,945
- Issue date May 17, 2005
- Toyoda Gosei Co., Ltd.
- Norikatsu Koide
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser device and fabrication method thereof
- Patent number 6,888,867
- Issue date May 3, 2005
- Sharp Kabushiki Kaisha
- Nobuhiko Sawaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and devices using group III nitride compound semiconductor
- Patent number 6,881,651
- Issue date Apr 19, 2005
- Toyoda Gosei Co., Ltd.
- Norikatsu Koide
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting semiconductor device using gallium nitride compound...
- Patent number 6,853,009
- Issue date Feb 8, 2005
- Toyoda Gosei Co., Ltd.
- Hisaki Kato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting semiconductor device and method of fabricating the same
- Patent number 6,844,572
- Issue date Jan 18, 2005
- Sharp Kabushiki Kaisha
- Nobuhiko Sawaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing gallium nitride compound semiconductor
- Patent number 6,835,966
- Issue date Dec 28, 2004
- Toyoda Gosei Co., Ltd
- Norikatsu Koide
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a gallium nitride group compound semicondu...
- Patent number 6,830,992
- Issue date Dec 14, 2004
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light emitting device having gallium nitride based co...
- Patent number 6,822,270
- Issue date Nov 23, 2004
- Sharp Kabushiki Kaisha
- Norikatsu Koide
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light-emitting device and manufacturing method thereof
- Patent number 6,821,800
- Issue date Nov 23, 2004
- Toyoda Gosei Co., Ltd
- Norikatsu Koide
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing gallium nitride compound semiconductor
- Patent number 6,818,926
- Issue date Nov 16, 2004
- Toyoda Gosei Co., Ltd.
- Norikatsu Koide
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light emitting device and method for producing the same
- Patent number 6,806,115
- Issue date Oct 19, 2004
- Sharp Kabushiki Kaisha
- Norikatsu Koide
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light emitting device and method for producing the same
- Patent number 6,765,234
- Issue date Jul 20, 2004
- Sharp Kabushiki Kaisha
- Norikatsu Koide
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing semiconductor light emitting device and semico...
- Patent number 6,703,253
- Issue date Mar 9, 2004
- Sharp Kabushiki Kaisha
- Norikatsu Koide
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including an InGaAIN layer
- Patent number 6,635,901
- Issue date Oct 21, 2003
- Sharp Kabushiki Kaisha
- Nobuhiko Sawaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and devices using group III nitride compound semiconductor
- Patent number 6,617,668
- Issue date Sep 9, 2003
- Toyoda Gosei Co., Ltd
- Norikatsu Koide
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a light-emitting semiconductor device
- Patent number 6,607,595
- Issue date Aug 19, 2003
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting semiconductor device using gallium nitride group com...
- Patent number 6,593,599
- Issue date Jul 15, 2003
- Japan Science and Technology Corporation
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing gallium nitride compound semiconductor
- Patent number 6,580,098
- Issue date Jun 17, 2003
- Toyoda Gosei Co., Ltd
- Norikatsu Koide
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light-emitting device and manufacturing method thereof
- Patent number 6,541,293
- Issue date Apr 1, 2003
- Toyoda Gosei Co., Ltd.
- Norikatsu Koide
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride group compound semiconductor
- Patent number 6,472,690
- Issue date Oct 29, 2002
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting device
- Patent number 6,472,689
- Issue date Oct 29, 2002
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting semiconductor device using gallium nitride compound...
- Patent number 6,423,984
- Issue date Jul 23, 2002
- Toyoda Gosei Co., Ltd.
- Hisaki Kato
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
HIGH-LUMINANCE NITRIDE LIGHT-EMITTING DEVICE AND METHOD FOR MANUFAC...
- Publication number 20150228847
- Publication date Aug 13, 2015
- ILJIN LED CO., LTD.
- Norikatsu Koide
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for manufacturing gallium nitride compound semiconductor
- Publication number 20070099320
- Publication date May 3, 2007
- Toyoda Gosei Co., Ltd.
- Norikatsu Koide
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitride-based semiconductor light emitting device and manufacturing...
- Publication number 20060267033
- Publication date Nov 30, 2006
- SHARP KABUSHIKI KAISHA
- Norikatsu Koide
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for manufacturing gallium nitride compound semiconductor
- Publication number 20050260781
- Publication date Nov 24, 2005
- TOYODA GOSEI CO., LTD
- Norikatsu Koide
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for manufacturing gallium nitride group compound semiconductor
- Publication number 20050001245
- Publication date Jan 6, 2005
- Toyoda Gosei Co., Ltd.
- Norikatsu Koide
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for manufacturing gallium nitride compound semiconductor
- Publication number 20040079958
- Publication date Apr 29, 2004
- Toyoda Gosei Co., Ltd.
- Norikatsu Koide
- C30 - CRYSTAL GROWTH
Information Patent Application
Light-emitting semiconductor device using gallium nitride compound...
- Publication number 20040026705
- Publication date Feb 12, 2004
- Toyoda Gosei Co., Ltd.
- Hisaki Kato
- B82 - NANO-TECHNOLOGY
Information Patent Application
Nitride-based semiconductor light-emitting device and manufacturing...
- Publication number 20030218179
- Publication date Nov 27, 2003
- Sharp Kabushiki Kaisha
- Norikatsu Koide
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for manufacturing gallium nitride compound semiconductor
- Publication number 20030178634
- Publication date Sep 25, 2003
- Toyoda Gosei Co., Ltd.
- Norikatsu Koide
- C30 - CRYSTAL GROWTH
Information Patent Application
Light emitting semiconductor device and method of fabricating the same
- Publication number 20030178702
- Publication date Sep 25, 2003
- Nobuhiko Sawaki
- C30 - CRYSTAL GROWTH
Information Patent Application
Semiconductor light emitting device
- Publication number 20030173574
- Publication date Sep 18, 2003
- Norikatsu Koide
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for manufacturing gallium nitride compound semiconductor
- Publication number 20030157738
- Publication date Aug 21, 2003
- Toyoda Gosei Co., Ltd.
- Norikatsu Koide
- C30 - CRYSTAL GROWTH
Information Patent Application
Methods and devices using group III nitride compound semiconductor
- Publication number 20030155586
- Publication date Aug 21, 2003
- Toyoda Gosei Co., Ltd.
- Norikatsu Koide
- C30 - CRYSTAL GROWTH
Information Patent Application
Semiconductor light-emitting device and manufacturing method thereof
- Publication number 20030124789
- Publication date Jul 3, 2003
- TOYODA GOSEI CO., LTD
- Norikatsu Koide
- B82 - NANO-TECHNOLOGY
Information Patent Application
Nitride-based semiconductor light-emitting device and manufacturing...
- Publication number 20030116774
- Publication date Jun 26, 2003
- Kensaku Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for producing semiconductor light emitting device and semico...
- Publication number 20030092210
- Publication date May 15, 2003
- Norikatsu Koide
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor light emitting device and method for producing the same
- Publication number 20030087462
- Publication date May 8, 2003
- Norikatsu Koide
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor laser device and fabrication method thereof
- Publication number 20030031219
- Publication date Feb 13, 2003
- Nobuhiko Sawaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Light-emitting semiconductor device using gallium nitride compound...
- Publication number 20020149024
- Publication date Oct 17, 2002
- Hisaki Kato
- B82 - NANO-TECHNOLOGY
Information Patent Application
Semiconductor light-emitting device and manufacturing method thereof
- Publication number 20020146854
- Publication date Oct 10, 2002
- Toyoda Gosei Co., Ltd.
- Norikatsu Koide
- B82 - NANO-TECHNOLOGY
Information Patent Application
Semiconductor light emitting device and method for producing the same
- Publication number 20020079498
- Publication date Jun 27, 2002
- Norikatsu Koide
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and fabrication method thereof, and fabricatio...
- Publication number 20020074561
- Publication date Jun 20, 2002
- Nobuhiko Sawaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for manufacturing a gallium nitride group compound semicondu...
- Publication number 20020060326
- Publication date May 23, 2002
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor light-emitting device and method of manufacturing the...
- Publication number 20020045286
- Publication date Apr 18, 2002
- Norikatsu Koide
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor light-emitting device and manufacturing method thereof
- Publication number 20010048112
- Publication date Dec 6, 2001
- Toyoda Gosei Co., Ltd.
- Norikatsu Koide
- B82 - NANO-TECHNOLOGY

Norikatsu Koide

Person

Patents Grantslast 30 patents

Nitride-based semiconductor light emitting device and manufacturing...

Method for manufacturing gallium nitride compound semiconductor

Group III nitride compound semiconductor

Nitride-based semiconductor light-emitting device and manufacturing...

Light-emitting semiconductor device using gallium nitride compound...

Method for manufacturing a gallium nitride group compound semicondu...

Methods for manufacturing a light-emitting device

Method for manufacturing gallium nitride compound semiconductor

Method for manufacturing gallium nitride group compound semiconductor

Semiconductor laser device and fabrication method thereof

Methods and devices using group III nitride compound semiconductor

Light-emitting semiconductor device using gallium nitride compound...

Light emitting semiconductor device and method of fabricating the same

Method for manufacturing gallium nitride compound semiconductor

Method for manufacturing a gallium nitride group compound semicondu...

Semiconductor light emitting device having gallium nitride based co...

Semiconductor light-emitting device and manufacturing method thereof

Method for manufacturing gallium nitride compound semiconductor

Semiconductor light emitting device and method for producing the same

Semiconductor light emitting device and method for producing the same

Method for producing semiconductor light emitting device and semico...

Semiconductor device including an InGaAIN layer

Methods and devices using group III nitride compound semiconductor

Method for producing a light-emitting semiconductor device

Light-emitting semiconductor device using gallium nitride group com...

Method for manufacturing gallium nitride compound semiconductor

Semiconductor light-emitting device and manufacturing method thereof

Gallium nitride group compound semiconductor

Light emitting device

Light-emitting semiconductor device using gallium nitride compound...

Patents Applicationslast 30 patents

HIGH-LUMINANCE NITRIDE LIGHT-EMITTING DEVICE AND METHOD FOR MANUFAC...

Method for manufacturing gallium nitride compound semiconductor

Nitride-based semiconductor light emitting device and manufacturing...

Method for manufacturing gallium nitride compound semiconductor

Method for manufacturing gallium nitride group compound semiconductor

Method for manufacturing gallium nitride compound semiconductor

Light-emitting semiconductor device using gallium nitride compound...

Nitride-based semiconductor light-emitting device and manufacturing...

Method for manufacturing gallium nitride compound semiconductor

Light emitting semiconductor device and method of fabricating the same

Semiconductor light emitting device

Method for manufacturing gallium nitride compound semiconductor

Methods and devices using group III nitride compound semiconductor

Semiconductor light-emitting device and manufacturing method thereof

Nitride-based semiconductor light-emitting device and manufacturing...

Method for producing semiconductor light emitting device and semico...

Semiconductor light emitting device and method for producing the same

Semiconductor laser device and fabrication method thereof

Light-emitting semiconductor device using gallium nitride compound...

Semiconductor light-emitting device and manufacturing method thereof

Semiconductor light emitting device and method for producing the same

Semiconductor device and fabrication method thereof, and fabricatio...

Method for manufacturing a gallium nitride group compound semicondu...

Semiconductor light-emitting device and method of manufacturing the...

Semiconductor light-emitting device and manufacturing method thereof