Oleg Gluschenkov

Person

Tannersville, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Wrap-around contact for nanosheet device
- Patent number 12,176,404
- Issue date Dec 24, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Back end of line embedded RRAM structure with low forming voltage
- Patent number 12,144,271
- Issue date Nov 12, 2024
- International Business Machines Corporation
- Oleg Gluschenkov
Information Patent Grant
Back end of line embedded RRAM structure with grain growth enhancement
- Patent number 12,144,270
- Issue date Nov 12, 2024
- International Business Machines Corporation
- Oleg Gluschenkov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated short channel omega gate FinFET and long channel FinFET
- Patent number 12,100,766
- Issue date Sep 24, 2024
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Josephson junction device fabricated by direct write ion implantation
- Patent number 12,035,641
- Issue date Jul 9, 2024
- International Business Machines Corporation
- Steven J. Holmes
Information Patent Grant
Contact resistance of a metal liner in a phase change memory cell
- Patent number 11,957,069
- Issue date Apr 9, 2024
- International Business Machines Corporation
- Injo Ok
Information Patent Grant
Uniform horizontal spacer
- Patent number 11,715,783
- Issue date Aug 1, 2023
- International Business Machines Corporation
- Michael P. Belyansky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laser anneal for MRAM encapsulation enhancement
- Patent number 11,711,982
- Issue date Jul 25, 2023
- International Business Machines Corporation
- Michael Rizzolo
Information Patent Grant
Stackable symmetrical operation memory bit cell structure with bidi...
- Patent number 11,621,297
- Issue date Apr 4, 2023
- International Business Machines Corporation
- Alexander Reznicek
- G11 - INFORMATION STORAGE
Information Patent Grant
Low resistance source drain contact formation with trench metastabl...
- Patent number 11,562,906
- Issue date Jan 24, 2023
- International Business Machines Corporation
- Oleg Gluschenkov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact source/drain resistance
- Patent number 11,322,588
- Issue date May 3, 2022
- International Business Machines Corporation
- Fee Li Lie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Large grain copper interconnect lines for MRAM
- Patent number 11,309,216
- Issue date Apr 19, 2022
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sloped epitaxy buried contact
- Patent number 11,227,922
- Issue date Jan 18, 2022
- International Business Machines Corporation
- Tao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple nanosecond laser pulse anneal processes and resultant semi...
- Patent number 11,201,061
- Issue date Dec 14, 2021
- International Business Machines Corporation
- Aritra Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Analog nonvolatile memory cells using dopant activation
- Patent number 11,145,380
- Issue date Oct 12, 2021
- International Business Machines Corporation
- Heng Wu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Hybrid gate stack integration for stacked vertical transport field-...
- Patent number 11,139,215
- Issue date Oct 5, 2021
- International Business Machines Corporation
- Tenko Yamashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MRAM devices containing a harden gap fill dielectric material
- Patent number 11,114,606
- Issue date Sep 7, 2021
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
All-semiconductor Josephson junction device for qubit applications
- Patent number 11,107,968
- Issue date Aug 31, 2021
- International Business Machines Corporation
- Steven J. Holmes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor and method of forming same
- Patent number 11,088,280
- Issue date Aug 10, 2021
- International Business Machines Corporation
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned gate and junction for VTFET
- Patent number 11,075,280
- Issue date Jul 27, 2021
- International Business Machines Corporation
- Zuoguang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Soi FinFET fins with recessed fins and epitaxy in source drain region
- Patent number 11,069,809
- Issue date Jul 20, 2021
- GLOBALFOUNDRIES U.S. INC.
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laser anneal for MRAM encapsulation enhancement
- Patent number 11,069,854
- Issue date Jul 20, 2021
- International Business Machines Corporation
- Michael Rizzolo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
EUV pattern transfer with ion implantation and reduced impact of re...
- Patent number 11,031,246
- Issue date Jun 8, 2021
- International Business Machines Corporation
- Yann Mignot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunable adhesion of EUV photoresist on oxide surface
- Patent number 11,022,887
- Issue date Jun 1, 2021
- International Business Machines Corporation
- Yongan Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistivity epitaxially formed contact region for nanosheet ext...
- Patent number 11,004,984
- Issue date May 11, 2021
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid gate stack integration for stacked vertical transport field-...
- Patent number 10,964,603
- Issue date Mar 30, 2021
- International Business Machines Corporation
- Tenko Yamashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Uniform horizontal spacer
- Patent number 10,957,781
- Issue date Mar 23, 2021
- International Business Machines Corporation
- Michael P. Belyansky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low parasitic capacitance and resistance finFET device
- Patent number 10,930,780
- Issue date Feb 23, 2021
- International Business Machines Corporation
- Oleg Gluschenkov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stackable symmetrical operation memory bit cell structure with bidi...
- Patent number 10,910,435
- Issue date Feb 2, 2021
- International Business Machines Corporation
- Alexander Reznicek
- G11 - INFORMATION STORAGE
Information Patent Grant
Extreme ultraviolet lithography for high volume manufacture of a se...
- Patent number 10,879,068
- Issue date Dec 29, 2020
- International Business Machines Corporation
- Yongan Xu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GATE-ALL-AROUND TRANSISTORS WITH CLADDED SOURCE/DRAIN REGIONS
- Publication number 20240213315
- Publication date Jun 27, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIELECTRIC SEPARATION FOR BACKSIDE POWER RAIL LINES
- Publication number 20240203881
- Publication date Jun 20, 2024
- International Business Machines Corporation
- Chen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH BACKSIDE U-SHAPED SILICIDE
- Publication number 20240204063
- Publication date Jun 20, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH BACKSIDE METALLIZATION LAYERS
- Publication number 20240194586
- Publication date Jun 13, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FET CONTACT FORMATION
- Publication number 20240105590
- Publication date Mar 28, 2024
- International Business Machines Corporation
- Koichi Motoyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTORS WITH 2-DIMENSIONAL ELECTRON GAS CHANNELS
- Publication number 20240006502
- Publication date Jan 4, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CPP-AGNOSTIC SOURCE-DRAIN CONTACT FORMATION FOR GATE-ALL-AROUND DEV...
- Publication number 20230420500
- Publication date Dec 28, 2023
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE OF FORMING SIDEWALL CONTACT FOR STACKED FET
- Publication number 20230411397
- Publication date Dec 21, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANGLED CONTACT WITH A NEGATIVE TAPERED PROFILE
- Publication number 20230386897
- Publication date Nov 30, 2023
- International Business Machines Corporation
- Oleg Gluschenkov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED BACKSIDE TRENCH EPITAXY FOR LOW CONTACT RESISTIVITY
- Publication number 20230317782
- Publication date Oct 5, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FETS INCLUDING DEVICES WITH THICK GATE OXIDE
- Publication number 20230307452
- Publication date Sep 28, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING CHANNEL STRUCTURE TIP DAMAGE DURING SPACER DEPOSITION
- Publication number 20230261049
- Publication date Aug 17, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED LINERLESS VIAS
- Publication number 20230215800
- Publication date Jul 6, 2023
- International Business Machines Corporation
- Ruilong XIE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JOSEPHSON JUNCTION DEVICE FABRICATED BY DIRECT WRITE ION IMPLANTATION
- Publication number 20230210019
- Publication date Jun 29, 2023
- International Business Machines Corporation
- Steven J. Holmes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL SILICON JOSEPHSON JUNCTION DEVICE FOR QUBIT APPLICATIONS
- Publication number 20230210018
- Publication date Jun 29, 2023
- International Business Machines Corporation
- Steven J. Holmes
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
ANGLED VIA FOR TIP TO TIP MARGIN IMPROVEMENT
- Publication number 20230187510
- Publication date Jun 15, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARASITIC CAPACITANCE REDUCTION FOR TALL NANOSHEET DEVICES
- Publication number 20230163126
- Publication date May 25, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY GAPS
- Publication number 20230157185
- Publication date May 18, 2023
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED SHORT CHANNEL OMEGA GATE FINFET AND LONG CHANNEL FINFET
- Publication number 20230135321
- Publication date May 4, 2023
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESSED MATERIAL WITHIN GATE CUT REGION
- Publication number 20230139399
- Publication date May 4, 2023
- International Business Machines Corporation
- HUIMEI ZHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH REDUCED SOURCE/DRAIN RESISTANCE
- Publication number 20230127783
- Publication date Apr 27, 2023
- International Business Machines Corporation
- Tsung-Sheng Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT RESISTANCE OF A METAL LINER IN A PHASE CHANGE MEMORY CELL
- Publication number 20230129619
- Publication date Apr 27, 2023
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WRAP-AROUND CONTACT FOR NANOSHEET DEVICE
- Publication number 20230099985
- Publication date Mar 30, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACK END OF LINE EMBEDDED RRAM STRUCTURE WITH GRAIN GROWTH ENHANCEMENT
- Publication number 20230051017
- Publication date Feb 16, 2023
- International Business Machines Corporation
- Oleg Gluschenkov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACK END OF LINE EMBEDDED RRAM STRUCTURE WITH LOW FORMING VOLTAGE
- Publication number 20230051052
- Publication date Feb 16, 2023
- International Business Machines Corporation
- Oleg Gluschenkov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Sloped Epitaxy Buried Contact
- Publication number 20210399098
- Publication date Dec 23, 2021
- International Business Machines Corporation
- Tao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANALOG NONVOLATILE MEMORY CELLS USING DOPANT ACTIVATION
- Publication number 20210343358
- Publication date Nov 4, 2021
- International Business Machines Corporation
- Heng Wu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
LASER ANNEAL FOR MRAM ENCAPSULATION ENHANCEMENT
- Publication number 20210313511
- Publication date Oct 7, 2021
- International Business Machines Corporation
- Michael Rizzolo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ALL-SEMICONDUCTOR JOSEPHSON JUNCTION DEVICE FOR QUBIT APPLICATIONS
- Publication number 20210296557
- Publication date Sep 23, 2021
- International Business Machines Corporation
- STEVEN J. HOLMES
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LARGE GRAIN COPPER INTERCONNECT LINES FOR MRAM
- Publication number 20210233812
- Publication date Jul 29, 2021
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS

Oleg Gluschenkov

Person

Patents Grantslast 30 patents

Wrap-around contact for nanosheet device

Back end of line embedded RRAM structure with low forming voltage

Back end of line embedded RRAM structure with grain growth enhancement

Integrated short channel omega gate FinFET and long channel FinFET

Josephson junction device fabricated by direct write ion implantation

Contact resistance of a metal liner in a phase change memory cell

Uniform horizontal spacer

Laser anneal for MRAM encapsulation enhancement

Stackable symmetrical operation memory bit cell structure with bidi...

Low resistance source drain contact formation with trench metastabl...

Contact source/drain resistance

Large grain copper interconnect lines for MRAM

Sloped epitaxy buried contact

Multiple nanosecond laser pulse anneal processes and resultant semi...

Analog nonvolatile memory cells using dopant activation

Hybrid gate stack integration for stacked vertical transport field-...

MRAM devices containing a harden gap fill dielectric material

All-semiconductor Josephson junction device for qubit applications

Transistor and method of forming same

Self-aligned gate and junction for VTFET

Soi FinFET fins with recessed fins and epitaxy in source drain region

Laser anneal for MRAM encapsulation enhancement

EUV pattern transfer with ion implantation and reduced impact of re...

Tunable adhesion of EUV photoresist on oxide surface

Low resistivity epitaxially formed contact region for nanosheet ext...

Hybrid gate stack integration for stacked vertical transport field-...

Uniform horizontal spacer

Low parasitic capacitance and resistance finFET device

Stackable symmetrical operation memory bit cell structure with bidi...

Extreme ultraviolet lithography for high volume manufacture of a se...

Patents Applicationslast 30 patents

GATE-ALL-AROUND TRANSISTORS WITH CLADDED SOURCE/DRAIN REGIONS

DIELECTRIC SEPARATION FOR BACKSIDE POWER RAIL LINES

SEMICONDUCTOR DEVICE WITH BACKSIDE U-SHAPED SILICIDE

SEMICONDUCTOR STRUCTURE WITH BACKSIDE METALLIZATION LAYERS

STACKED FET CONTACT FORMATION

FIELD EFFECT TRANSISTORS WITH 2-DIMENSIONAL ELECTRON GAS CHANNELS

CPP-AGNOSTIC SOURCE-DRAIN CONTACT FORMATION FOR GATE-ALL-AROUND DEV...

METHOD AND STRUCTURE OF FORMING SIDEWALL CONTACT FOR STACKED FET

ANGLED CONTACT WITH A NEGATIVE TAPERED PROFILE

SELF-ALIGNED BACKSIDE TRENCH EPITAXY FOR LOW CONTACT RESISTIVITY

STACKED FETS INCLUDING DEVICES WITH THICK GATE OXIDE

REDUCING CHANNEL STRUCTURE TIP DAMAGE DURING SPACER DEPOSITION

ENHANCED LINERLESS VIAS

JOSEPHSON JUNCTION DEVICE FABRICATED BY DIRECT WRITE ION IMPLANTATION

VERTICAL SILICON JOSEPHSON JUNCTION DEVICE FOR QUBIT APPLICATIONS

ANGLED VIA FOR TIP TO TIP MARGIN IMPROVEMENT

PARASITIC CAPACITANCE REDUCTION FOR TALL NANOSHEET DEVICES

PHASE CHANGE MEMORY GAPS

INTEGRATED SHORT CHANNEL OMEGA GATE FINFET AND LONG CHANNEL FINFET

STRESSED MATERIAL WITHIN GATE CUT REGION

FIELD EFFECT TRANSISTOR WITH REDUCED SOURCE/DRAIN RESISTANCE

CONTACT RESISTANCE OF A METAL LINER IN A PHASE CHANGE MEMORY CELL

WRAP-AROUND CONTACT FOR NANOSHEET DEVICE

BACK END OF LINE EMBEDDED RRAM STRUCTURE WITH GRAIN GROWTH ENHANCEMENT

BACK END OF LINE EMBEDDED RRAM STRUCTURE WITH LOW FORMING VOLTAGE

Sloped Epitaxy Buried Contact

ANALOG NONVOLATILE MEMORY CELLS USING DOPANT ACTIVATION

LASER ANNEAL FOR MRAM ENCAPSULATION ENHANCEMENT

ALL-SEMICONDUCTOR JOSEPHSON JUNCTION DEVICE FOR QUBIT APPLICATIONS

LARGE GRAIN COPPER INTERCONNECT LINES FOR MRAM