Oleg GOLONZKA

Person

Beaverton, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method of forming stacked trench contacts and structures formed the...
- Patent number 12,142,566
- Issue date Nov 12, 2024
- Intel Corporation
- Bernhard Sell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of gate-all-around integrated circuit structures having...
- Patent number 12,113,068
- Issue date Oct 8, 2024
- Intel Corporation
- Dan S. Lavric
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of gate-all-around integrated circuit structures having...
- Patent number 12,051,698
- Issue date Jul 30, 2024
- Intel Corporation
- Daniel G. Ouellette
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate aligned contact and method to fabricate same
- Patent number 12,033,894
- Issue date Jul 9, 2024
- Intel Corporation
- Oleg Golonzka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of gate-all-around integrated circuit structures having...
- Patent number 11,990,472
- Issue date May 21, 2024
- Intel Corporation
- Leonard P. Guler
- G11 - INFORMATION STORAGE
Information Patent Grant
Gate-all-around integrated circuit structures having devices with s...
- Patent number 11,908,856
- Issue date Feb 20, 2024
- Intel Corporation
- Biswajeet Guha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having adjacent deep...
- Patent number 11,837,641
- Issue date Dec 5, 2023
- Intel Corporation
- Biswajeet Guha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having devices with c...
- Patent number 11,824,116
- Issue date Nov 21, 2023
- Intel Corporation
- Biswajeet Guha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having adjacent struc...
- Patent number 11,799,009
- Issue date Oct 24, 2023
- Intel Corporation
- Biswajeet Guha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wrap-around trench contact structure and methods of fabrication
- Patent number 11,776,959
- Issue date Oct 3, 2023
- Intel Corporation
- Joseph Steigerwald
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conductive alloy layer in magnetic memory devices and methods of fa...
- Patent number 11,770,979
- Issue date Sep 26, 2023
- Intel Corporation
- Daniel Ouellette
- G11 - INFORMATION STORAGE
Information Patent Grant
Gate aligned contact and method to fabricate same
- Patent number 11,756,829
- Issue date Sep 12, 2023
- Intel Corporation
- Oleg Golonzka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory devices and methods of fabrication
- Patent number 11,737,368
- Issue date Aug 22, 2023
- Intel Corporation
- Daniel Ouellette
Information Patent Grant
Method of forming stacked trench contacts and structures formed the...
- Patent number 11,721,630
- Issue date Aug 8, 2023
- Intel Corporation
- Bernhard Sell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random-access memory devices and methods of fabrication
- Patent number 11,621,395
- Issue date Apr 4, 2023
- Intel Corporation
- Nathan Strutt
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory devices with a transition metal dopant at an interf...
- Patent number 11,616,192
- Issue date Mar 28, 2023
- Intel Corporation
- Tofizur Rahman
- G11 - INFORMATION STORAGE
Information Patent Grant
DEPOP using cyclic selective spacer etch
- Patent number 11,569,370
- Issue date Jan 31, 2023
- Intel Corporation
- Leonard P. Guler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random access memory device and methods of fabrication
- Patent number 11,502,254
- Issue date Nov 15, 2022
- Intel Corporation
- Nathan Strutt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate aligned contact and method to fabricate same
- Patent number 11,495,496
- Issue date Nov 8, 2022
- Intel Corporation
- Oleg Golonzka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random access memory device and methods of fabrication
- Patent number 11,489,112
- Issue date Nov 1, 2022
- Intel Corporation
- Namrata S. Asuri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Retention improvement by high-k encapsulation of RRAM devices
- Patent number 11,462,684
- Issue date Oct 4, 2022
- Intel Corporation
- Albert Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Perpendicular spin transfer torque magnetic mechanism
- Patent number 11,437,567
- Issue date Sep 6, 2022
- Intel Corporation
- Justin Brockman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interconnect structures for logic and memory devices and methods of...
- Patent number 11,430,944
- Issue date Aug 30, 2022
- Intel Corporation
- Christopher Wiegand
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random access memory device with switching multi-layer st...
- Patent number 11,430,948
- Issue date Aug 30, 2022
- Intel Corporation
- Timothy Glassman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Perpendicular spin transfer torque devices with improved retention...
- Patent number 11,411,173
- Issue date Aug 9, 2022
- Intel Corporation
- Angeline Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Perpendicular spin transfer torque memory (pSTTM) devices with enha...
- Patent number 11,404,630
- Issue date Aug 2, 2022
- Intel Corporation
- Md Tofizur Rahman
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory devices with layered electrodes and methods of fabr...
- Patent number 11,380,838
- Issue date Jul 5, 2022
- Intel Corporation
- Justin Brockman
- G11 - INFORMATION STORAGE
Information Patent Grant
RRAM devices with reduced forming voltage
- Patent number 11,342,499
- Issue date May 24, 2022
- Intel Corporation
- Timothy E. Glassman
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of forming stacked trench contacts and structures formed the...
- Patent number 11,335,639
- Issue date May 17, 2022
- Intel Corporation
- Bernhard Sell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pattern decomposition lithography techniques
- Patent number 11,107,786
- Issue date Aug 31, 2021
- Intel Corporation
- Charles H. Wallace
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INTEGRATED CIRCUIT DEVICE WITH BACKSIDE FIN TRIM ISOLATION
- Publication number 20240304619
- Publication date Sep 12, 2024
- Guowei Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL GATE FABRICATION FOR NANORIBBON-BASED TRANSISTORS
- Publication number 20240290788
- Publication date Aug 29, 2024
- Intel Corporation
- Guowei Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE ALIGNED CONTACT AND METHOD TO FABRICATE SAME
- Publication number 20240282633
- Publication date Aug 22, 2024
- Intel Corporation
- Oleg GOLONZKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING...
- Publication number 20240178226
- Publication date May 30, 2024
- Intel Corporation
- Leonard P. GULER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DEVICES WITH S...
- Publication number 20240145471
- Publication date May 2, 2024
- Intel Corporation
- Biswajeet GUHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ASPECT RATIO METAL GATE CUTS
- Publication number 20240105453
- Publication date Mar 28, 2024
- Intel Corporation
- Reza Bayati
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE AND DRAIN REGIONS FOR LATERALLY ADJACENT GATE-ALL-AROUND (GA...
- Publication number 20240071831
- Publication date Feb 29, 2024
- Intel Corporation
- Chang Wan Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING ADJACENT DEEP...
- Publication number 20240055497
- Publication date Feb 15, 2024
- Intel Corporation
- Biswajeet GUHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DEVICES WITH C...
- Publication number 20240038889
- Publication date Feb 1, 2024
- Intel Corporation
- Biswajeet GUHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING ADJACENT STRUC...
- Publication number 20240006504
- Publication date Jan 4, 2024
- Intel Corporation
- Biswajeet GUHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WRAP-AROUND TRENCH CONTACT STRUCTURE AND METHODS OF FABRICATION
- Publication number 20230387121
- Publication date Nov 30, 2023
- Intel Corporation
- Joseph Steigerwald
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE ALIGNED CONTACT AND METHOD TO FABRICATE SAME
- Publication number 20230360972
- Publication date Nov 9, 2023
- Intel Corporation
- Oleg GOLONZKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING STACKED TRENCH CONTACTS AND STRUCTURES FORMED THE...
- Publication number 20230326860
- Publication date Oct 12, 2023
- Intel Corporation
- Bernhard SELL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF CAVITY SPACER AND SOURCE-DRAIN EPITAXIAL GROWTH FOR SC...
- Publication number 20230197818
- Publication date Jun 22, 2023
- Intel Corporation
- Nitesh Kumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE ALIGNED CONTACT AND METHOD TO FABRICATE SAME
- Publication number 20230030806
- Publication date Feb 2, 2023
- Intel Corporation
- Oleg GOLONZKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES HAVING METAL GATES WITH TAPERED PLUGS
- Publication number 20220415890
- Publication date Dec 29, 2022
- Intel Corporation
- Mohammad HASAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING UNIFORM THRESH...
- Publication number 20220416039
- Publication date Dec 29, 2022
- Intel Corporation
- Dan S. LAVRIC
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING GATE HEIGHT RE...
- Publication number 20220416042
- Publication date Dec 29, 2022
- Intel Corporation
- William HSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RELEASED FIN FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION
- Publication number 20220416040
- Publication date Dec 29, 2022
- Intel Corporation
- Leonard P. GULER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANORIBBON SUBFIN ISOLATION BY BACKSIDE SILICON SUBSTRATE REMOVAL W...
- Publication number 20220416041
- Publication date Dec 29, 2022
- Intel Corporation
- Mohammad HASAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR ARRANGEMENTS WITH STACKED TRENCH CONTACTS AND GATE CONT...
- Publication number 20220285527
- Publication date Sep 8, 2022
- Intel Corporation
- Andy Chih-Hung Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING STACKED TRENCH CONTACTS AND STRUCTURES FORMED THE...
- Publication number 20220246529
- Publication date Aug 4, 2022
- Intel Corporation
- Bernhard SELL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING...
- Publication number 20220093592
- Publication date Mar 24, 2022
- Intel Corporation
- Leonard P. GULER
- G11 - INFORMATION STORAGE
Information Patent Application
FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING...
- Publication number 20220093596
- Publication date Mar 24, 2022
- Intel Corporation
- Dan S. Lavric
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING...
- Publication number 20220093598
- Publication date Mar 24, 2022
- Intel Corporation
- Dan S. LAVRIC
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING...
- Publication number 20220093648
- Publication date Mar 24, 2022
- Intel Corporation
- Dan S. LAVRIC
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING...
- Publication number 20220093597
- Publication date Mar 24, 2022
- Intel Corporation
- Daniel G. OUELLETTE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PATTERN DECOMPOSITION LITHOGRAPHY TECHNIQUES
- Publication number 20210375807
- Publication date Dec 2, 2021
- Intel Corporation
- CHARLES H. WALLACE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING LOW ASPECT RAT...
- Publication number 20210202478
- Publication date Jul 1, 2021
- Intel Corporation
- Biswajeet GUHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING REMOVED SUBSTRATE
- Publication number 20210202696
- Publication date Jul 1, 2021
- Intel Corporation
- Biswajeet GUHA
- H01 - BASIC ELECTRIC ELEMENTS

Oleg GOLONZKA

Person

Patents Grantslast 30 patents

Method of forming stacked trench contacts and structures formed the...

Fabrication of gate-all-around integrated circuit structures having...

Fabrication of gate-all-around integrated circuit structures having...

Gate aligned contact and method to fabricate same

Fabrication of gate-all-around integrated circuit structures having...

Gate-all-around integrated circuit structures having devices with s...

Gate-all-around integrated circuit structures having adjacent deep...

Gate-all-around integrated circuit structures having devices with c...

Gate-all-around integrated circuit structures having adjacent struc...

Wrap-around trench contact structure and methods of fabrication

Conductive alloy layer in magnetic memory devices and methods of fa...

Gate aligned contact and method to fabricate same

Magnetic memory devices and methods of fabrication

Method of forming stacked trench contacts and structures formed the...

Resistive random-access memory devices and methods of fabrication

Magnetic memory devices with a transition metal dopant at an interf...

DEPOP using cyclic selective spacer etch

Resistive random access memory device and methods of fabrication

Gate aligned contact and method to fabricate same

Resistive random access memory device and methods of fabrication

Retention improvement by high-k encapsulation of RRAM devices

Perpendicular spin transfer torque magnetic mechanism

Interconnect structures for logic and memory devices and methods of...

Resistive random access memory device with switching multi-layer st...

Perpendicular spin transfer torque devices with improved retention...

Perpendicular spin transfer torque memory (pSTTM) devices with enha...

Magnetic memory devices with layered electrodes and methods of fabr...

RRAM devices with reduced forming voltage

Method of forming stacked trench contacts and structures formed the...

Pattern decomposition lithography techniques

Patents Applicationslast 30 patents

INTEGRATED CIRCUIT DEVICE WITH BACKSIDE FIN TRIM ISOLATION

METAL GATE FABRICATION FOR NANORIBBON-BASED TRANSISTORS

GATE ALIGNED CONTACT AND METHOD TO FABRICATE SAME

FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DEVICES WITH S...

HIGH ASPECT RATIO METAL GATE CUTS

SOURCE AND DRAIN REGIONS FOR LATERALLY ADJACENT GATE-ALL-AROUND (GA...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING ADJACENT DEEP...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DEVICES WITH C...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING ADJACENT STRUC...

WRAP-AROUND TRENCH CONTACT STRUCTURE AND METHODS OF FABRICATION

GATE ALIGNED CONTACT AND METHOD TO FABRICATE SAME

METHOD OF FORMING STACKED TRENCH CONTACTS AND STRUCTURES FORMED THE...

FORMATION OF CAVITY SPACER AND SOURCE-DRAIN EPITAXIAL GROWTH FOR SC...

GATE ALIGNED CONTACT AND METHOD TO FABRICATE SAME

INTEGRATED CIRCUIT STRUCTURES HAVING METAL GATES WITH TAPERED PLUGS

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING UNIFORM THRESH...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING GATE HEIGHT RE...

RELEASED FIN FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION

NANORIBBON SUBFIN ISOLATION BY BACKSIDE SILICON SUBSTRATE REMOVAL W...

TRANSISTOR ARRANGEMENTS WITH STACKED TRENCH CONTACTS AND GATE CONT...

METHOD OF FORMING STACKED TRENCH CONTACTS AND STRUCTURES FORMED THE...

FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING...

FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING...

FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING...

FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING...

FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING...

PATTERN DECOMPOSITION LITHOGRAPHY TECHNIQUES

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING LOW ASPECT RAT...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING REMOVED SUBSTRATE