Oleg V. Kononchuk

Person

Brush Prarie, WA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Growth of epitaxial semiconductor material with improved crystallog...
- Patent number 6,703,290
- Issue date Mar 9, 2004
- SEH America, Inc.
- Mark R. Boydston
- C30 - CRYSTAL GROWTH
Information Patent Grant
High resistivity silicon wafer having electrically inactive dopant...
- Patent number 6,673,147
- Issue date Jan 6, 2004
- SEH America, Inc.
- Oleg V. Kononchuk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a high resistivity silicon wafer utilizing heat...
- Patent number 6,669,777
- Issue date Dec 30, 2003
- SEH America, Inc.
- Oleg V. Kononchuk
- C30 - CRYSTAL GROWTH
Information Patent Grant
High resistivity silicon wafer produced by a controlled pull rate c...
- Patent number 6,669,775
- Issue date Dec 30, 2003
- SEH America, Inc.
- Oleg V. Kononchuk
- C30 - CRYSTAL GROWTH
Information Patent Grant
High resistivity silicon wafer with thick epitaxial layer and metho...
- Patent number 6,583,024
- Issue date Jun 24, 2003
- SEH America, Inc.
- Oleg V. Kononchuk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High resistivity silicon wafer and method of producing same using t...
- Patent number 6,565,652
- Issue date May 20, 2003
- SEH America, Inc.
- Oleg V. Kononchuk
- C30 - CRYSTAL GROWTH
Information Patent Grant
In-situ post epitaxial treatment process
- Patent number 6,562,128
- Issue date May 13, 2003
- SEH America, Inc.
- Gerald R. Dietze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Growth of epitaxial semiconductor material with improved crystallog...
- Patent number 6,506,667
- Issue date Jan 14, 2003
- SEH America, Inc.
- Mark R. Boydston
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of demounting silicon wafers after polishing
- Patent number 6,416,391
- Issue date Jul 9, 2002
- SEH America, Inc.
- Oleg V. Kononchuk
- B24 - GRINDING POLISHING
Information Patent Grant
Apparatus and method for reducing bow and warp in silicon wafers sl...
- Patent number 6,352,071
- Issue date Mar 5, 2002
- SEH America, Inc.
- Oleg V. Kononchuk
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Low cost silicon substrate with impurity gettering and latch up pro...
- Patent number 6,346,460
- Issue date Feb 12, 2002
- SEH America
- Oleg V. Kononchuk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for wafer thickness sorting
- Patent number 6,286,685
- Issue date Sep 11, 2001
- SEH America, Inc.
- Oleg V. Kononchuk
- G01 - MEASURING TESTING
Information Patent Grant
Method of determining the thickness of a layer on a silicon substrate
- Patent number 6,284,986
- Issue date Sep 4, 2001
- SEH America, Inc.
- Gerald R. Dietze
- G01 - MEASURING TESTING
Information Patent Grant
Growth of epitaxial semiconductor material with improved crystallog...
- Patent number 6,190,453
- Issue date Feb 20, 2001
- SEH America, Inc.
- Mark R. Boydston
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of processing the backside of a wafer within an epitaxial re...
- Patent number 6,184,154
- Issue date Feb 6, 2001
- SEH America, Inc.
- Gerald R. Dietze
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of effecting nitrogen doping in Czochralski grown silicon cr...
- Patent number 6,059,875
- Issue date May 9, 2000
- SEH America, Inc.
- Scott M. Kirkland
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
Gettering filter and associated method for removing oxygen from a gas
- Publication number 20050053535
- Publication date Mar 10, 2005
- SEH America, Inc.
- David A. Beauchaine
- B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
Information Patent Application
METHOD OF PRODUCING A HIGH RESISTIVITY SIMOX SILICON SUBSTRATE
- Publication number 20040224477
- Publication date Nov 11, 2004
- IBIS TECHNOLOGY CORPORATION
- Yuri Erokhin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating a wafer including dry etching the edge of th...
- Publication number 20040157461
- Publication date Aug 12, 2004
- SEH America, Inc.
- Oleg V. Kononchuk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High resistivity silicon wafer having electrically inactive dopant...
- Publication number 20030106482
- Publication date Jun 12, 2003
- SEH America, Inc.
- Oleg V. Kononchuk
- C30 - CRYSTAL GROWTH
Information Patent Application
HIGH RESISTIVITY SILICON WAFER WITH THICK EPITAXIAL LAYER AND METHO...
- Publication number 20030109115
- Publication date Jun 12, 2003
- SEH Amercia, Inc.
- Oleg V. Kononchuk
- C30 - CRYSTAL GROWTH
Information Patent Application
HIGH RESISTIVITY SILICON WAFER AND METHOD OF PRODUCING SAME USING T...
- Publication number 20030106485
- Publication date Jun 12, 2003
- SEH America, Inc.
- Oleg V. Kononchuk
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of producing a high resistivity silicon wafer utilizing heat...
- Publication number 20030106486
- Publication date Jun 12, 2003
- SEH America, Inc.
- Oleg V. Kononchuk
- C30 - CRYSTAL GROWTH
Information Patent Application
Growth of epitaxial semiconductor material with improved crystallog...
- Publication number 20030109095
- Publication date Jun 12, 2003
- SEH America, Inc.
- Mark R. Boydston
- C30 - CRYSTAL GROWTH
Information Patent Application
High resistivity silicon wafer produced by a controlled pull rate c...
- Publication number 20030106481
- Publication date Jun 12, 2003
- SEH America, Inc.
- Oleg V. Kononchuk
- C30 - CRYSTAL GROWTH
Information Patent Application
IN-SITU POST EPITAXIAL TREATMENT PROCESS
- Publication number 20030097977
- Publication date May 29, 2003
- Gerald R. Dietze
- C30 - CRYSTAL GROWTH
Information Patent Application
Wafer support device and reactor system for epitaxial layer growth
- Publication number 20020062792
- Publication date May 30, 2002
- SEH America, Inc.
- Mark R. Boydston
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Growth of epitaxial semiconductor material with improved crystallog...
- Publication number 20020025660
- Publication date Feb 28, 2002
- SEH America, Inc.
- Mark R. Boydston
- C30 - CRYSTAL GROWTH

Oleg V. Kononchuk

Person

Patents Grantslast 30 patents

Growth of epitaxial semiconductor material with improved crystallog...

High resistivity silicon wafer having electrically inactive dopant...

Method of producing a high resistivity silicon wafer utilizing heat...

High resistivity silicon wafer produced by a controlled pull rate c...

High resistivity silicon wafer with thick epitaxial layer and metho...

High resistivity silicon wafer and method of producing same using t...

In-situ post epitaxial treatment process

Growth of epitaxial semiconductor material with improved crystallog...

Method of demounting silicon wafers after polishing

Apparatus and method for reducing bow and warp in silicon wafers sl...

Low cost silicon substrate with impurity gettering and latch up pro...

System and method for wafer thickness sorting

Method of determining the thickness of a layer on a silicon substrate

Growth of epitaxial semiconductor material with improved crystallog...

Method of processing the backside of a wafer within an epitaxial re...

Method of effecting nitrogen doping in Czochralski grown silicon cr...

Patents Applicationslast 30 patents

Gettering filter and associated method for removing oxygen from a gas

METHOD OF PRODUCING A HIGH RESISTIVITY SIMOX SILICON SUBSTRATE

Method for fabricating a wafer including dry etching the edge of th...

High resistivity silicon wafer having electrically inactive dopant...

HIGH RESISTIVITY SILICON WAFER WITH THICK EPITAXIAL LAYER AND METHO...

HIGH RESISTIVITY SILICON WAFER AND METHOD OF PRODUCING SAME USING T...

Method of producing a high resistivity silicon wafer utilizing heat...

Growth of epitaxial semiconductor material with improved crystallog...

High resistivity silicon wafer produced by a controlled pull rate c...

IN-SITU POST EPITAXIAL TREATMENT PROCESS

Wafer support device and reactor system for epitaxial layer growth

Growth of epitaxial semiconductor material with improved crystallog...