Patricia M. Mooney

Person

Mount Kisco, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Strained-silicon-on-insulator single-and double-gate MOSFET and met...
- Patent number 8,409,974
- Issue date Apr 2, 2013
- International Business Machines Corporation
- Guy Moshe Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained-silicon-on-insulator single-and double-gate MOSFET and met...
- Patent number 7,812,340
- Issue date Oct 12, 2010
- International Business Machines Corporation
- Guy Moshe Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained silicon directly-on-insulator substrate with hybrid crysta...
- Patent number 7,723,791
- Issue date May 25, 2010
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
In-place bonding of microstructures
- Patent number 7,709,352
- Issue date May 4, 2010
- International Business Machines Corporation
- Guy M. Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
In-place bonding of microstructures
- Patent number 7,456,081
- Issue date Nov 25, 2008
- International Business Machines Corporation
- Guy M. Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained silicon directly-on-insulator substrate with hybrid crysta...
- Patent number 7,423,303
- Issue date Sep 9, 2008
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hetero-integrated strained silicon n- and p-MOSFETs
- Patent number 7,396,747
- Issue date Jul 8, 2008
- International Business Machines Corporation
- Diane C. Boyd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hetero-integrated strained silicon n- and p-MOSFETs
- Patent number 7,273,800
- Issue date Sep 25, 2007
- International Business Machines Corporation
- Diane C. Boyd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing strained silicon directly-on-insulator sub...
- Patent number 7,271,043
- Issue date Sep 18, 2007
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
In-place bonding of microstructures
- Patent number 7,238,589
- Issue date Jul 3, 2007
- International Business Machines Corporation
- Guy Moshe Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High speed composite p-channel Si/SiGe heterostructure for field ef...
- Patent number 7,084,431
- Issue date Aug 1, 2006
- International Business Machines Corporation
- Jack Oon Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High speed composite p-channel Si/SiGe heterostructure for field ef...
- Patent number 6,858,502
- Issue date Feb 22, 2005
- International Business Machines Corporation
- Jack Oon Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion...
- Patent number 6,855,649
- Issue date Feb 15, 2005
- International Business Machines Corporation
- Silke H. Christiansen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabrication of relaxed SiGe buffer layers on silicon-on-...
- Patent number 6,833,332
- Issue date Dec 21, 2004
- International Business Machines Corporation
- Silke H. Christiansen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion...
- Patent number 6,709,903
- Issue date Mar 23, 2004
- International Business Machines Corporation
- Silke H. Christiansen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion...
- Patent number 6,593,625
- Issue date Jul 15, 2003
- International Business Machines Corporation
- Silke H. Christiansen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabrication of relaxed SiGe buffer layers on silicon-on-...
- Patent number 6,515,335
- Issue date Feb 4, 2003
- International Business Machines Corporation
- Silke H. Christiansen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High speed composite p-channel Si/SiGe heterostructure for field ef...
- Patent number 6,350,993
- Issue date Feb 26, 2002
- International Business Machines Corporation
- Jack Oon Chu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
STRAINED-SILICON-ON-INSULATOR SINGLE-AND DOUBLE-GATE MOSFET AND MET...
- Publication number 20090309160
- Publication date Dec 17, 2009
- International Business Machines Corporation
- Guy Moshe Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IN-PLACE BONDING OF MICROSTRUCTURES
- Publication number 20090035919
- Publication date Feb 5, 2009
- International Business Machines Corporation
- Guy Moshe Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR MANUFACTURING STRAINED SILICON DIRECTLY-ON...
- Publication number 20080296634
- Publication date Dec 4, 2008
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETERO-INTEGRATED STRAINED SILICON n- AND p- MOSFETS
- Publication number 20080251813
- Publication date Oct 16, 2008
- International Business Machines Corporation
- Diane C. Boyd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETERO-INTEGRATED STRAINED SILICON n- AND p- MOSFETS
- Publication number 20070278517
- Publication date Dec 6, 2007
- International Business Machines Corporation
- Diane C. Boyd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR MANUFACTURING STRAINED SILICON DIRECTLY-ON...
- Publication number 20070262361
- Publication date Nov 15, 2007
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IN-PLACE BONDING OF MICROSTRUCTURES
- Publication number 20070212851
- Publication date Sep 13, 2007
- International Business Machines Corporation
- Guy Moshe Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and method for manufacturing strained silicon directly-on...
- Publication number 20060157706
- Publication date Jul 20, 2006
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
In-place bonding of microstructures
- Publication number 20060094175
- Publication date May 4, 2006
- International Business Machines Corporation
- Guy Moshe Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hetero-integrated strained silicon n-and p-MOSFETs
- Publication number 20060091377
- Publication date May 4, 2006
- International Business Machines Corporation
- Diane C. Boyd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Strained-silicon-on-insulator single-and double-gate MOSFET and met...
- Publication number 20040253792
- Publication date Dec 16, 2004
- International Business Machines Corporation
- Guy Moshe Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High speed composite p-channel Si/SiGe heterostructure for field ef...
- Publication number 20040227154
- Publication date Nov 18, 2004
- International Business Machines Corporation
- Jack Oon Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion...
- Publication number 20030218189
- Publication date Nov 27, 2003
- International Business Machines Corporation
- Silke H. Christiansen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion...
- Publication number 20030201468
- Publication date Oct 30, 2003
- Silke H. Christiansen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabrication of relaxed SiGe buffer layers on silicon-on-...
- Publication number 20030127646
- Publication date Jul 10, 2003
- International Business Machines Corporation
- Silke H. Christiansen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion...
- Publication number 20020185686
- Publication date Dec 12, 2002
- International Business Machines Corporation
- Silke H. Christiansen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High speed composite p-channel Si/SiGe heterostructure for field ef...
- Publication number 20020125475
- Publication date Sep 12, 2002
- Jack Oon Chu
- H01 - BASIC ELECTRIC ELEMENTS

Patricia M. Mooney

Person

Patents Grantslast 30 patents

Strained-silicon-on-insulator single-and double-gate MOSFET and met...

Strained-silicon-on-insulator single-and double-gate MOSFET and met...

Strained silicon directly-on-insulator substrate with hybrid crysta...

In-place bonding of microstructures

In-place bonding of microstructures

Strained silicon directly-on-insulator substrate with hybrid crysta...

Hetero-integrated strained silicon n- and p-MOSFETs

Hetero-integrated strained silicon n- and p-MOSFETs

Method for manufacturing strained silicon directly-on-insulator sub...

In-place bonding of microstructures

High speed composite p-channel Si/SiGe heterostructure for field ef...

High speed composite p-channel Si/SiGe heterostructure for field ef...

Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion...

Method for fabrication of relaxed SiGe buffer layers on silicon-on-...

Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion...

Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion...

Method for fabrication of relaxed SiGe buffer layers on silicon-on-...

High speed composite p-channel Si/SiGe heterostructure for field ef...

Patents Applicationslast 30 patents

STRAINED-SILICON-ON-INSULATOR SINGLE-AND DOUBLE-GATE MOSFET AND MET...

IN-PLACE BONDING OF MICROSTRUCTURES

STRUCTURE AND METHOD FOR MANUFACTURING STRAINED SILICON DIRECTLY-ON...

HETERO-INTEGRATED STRAINED SILICON n- AND p- MOSFETS

HETERO-INTEGRATED STRAINED SILICON n- AND p- MOSFETS

STRUCTURE AND METHOD FOR MANUFACTURING STRAINED SILICON DIRECTLY-ON...

IN-PLACE BONDING OF MICROSTRUCTURES

Structure and method for manufacturing strained silicon directly-on...

In-place bonding of microstructures

Hetero-integrated strained silicon n-and p-MOSFETs

Strained-silicon-on-insulator single-and double-gate MOSFET and met...

High speed composite p-channel Si/SiGe heterostructure for field ef...

Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion...

Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion...

Method for fabrication of relaxed SiGe buffer layers on silicon-on-...

Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion...

High speed composite p-channel Si/SiGe heterostructure for field ef...