Patricio E. ROMERO

Person

Portland, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Scandium precursor for SC2O3 or SC2S3 atomic layer deposition
- Patent number 11,866,453
- Issue date Jan 9, 2024
- Intel Corporation
- Patricio E. Romero
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Selective gate spacers for semiconductor devices
- Patent number 11,532,724
- Issue date Dec 20, 2022
- Intel Corporation
- Scott B. Clendenning
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Scandium precursor for SC2O3 or SC2S3 atomic layer deposition
- Patent number 11,512,098
- Issue date Nov 29, 2022
- Intel Corporation
- Patricio E. Romero
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Passivation layer for germanium substrate
- Patent number 11,270,887
- Issue date Mar 8, 2022
- Intel Corporation
- Patricio E. Romero
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective gate spacers for semiconductor devices
- Patent number 10,971,600
- Issue date Apr 6, 2021
- Intel Corporation
- Scott B. Clendenning
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective deposition utilizing sacrificial blocking layers for semi...
- Patent number 10,756,215
- Issue date Aug 25, 2020
- Intel Corporation
- Grant Kloster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inherently selective precursors for deposition of second or third r...
- Patent number 10,464,959
- Issue date Nov 5, 2019
- Intel Corporation
- Patricio E. Romero
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Selective gate spacers for semiconductor devices
- Patent number 10,396,176
- Issue date Aug 27, 2019
- Intel Corporation
- Scott B. Clendenning
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective deposition utilizing sacrificial blocking layers for semi...
- Patent number 10,243,080
- Issue date Mar 26, 2019
- Intel Corporation
- Grant Kloster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transition metal dry etch by atomic layer removal of oxide layers f...
- Patent number 10,217,646
- Issue date Feb 26, 2019
- Intel Corporation
- Patricio E. Romero
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Precursor and process design for photo-assisted metal atomic layer...
- Patent number 9,932,671
- Issue date Apr 3, 2018
- Intel Corporation
- James M. Blackwell
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Process and material for preventing deleterious expansion of high a...
- Patent number 9,786,559
- Issue date Oct 10, 2017
- Intel Corporation
- Paul A. Zimmerman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective area deposition of metal films by atomic layer deposition...
- Patent number 9,583,389
- Issue date Feb 28, 2017
- Intel Corporation
- Patricio E. Romero
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Forming layers of materials over small regions by selective chemica...
- Patent number 9,530,733
- Issue date Dec 27, 2016
- Intel Corporation
- Robert L. Bristol
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conformal thin film deposition of electropositive metal alloy films
- Patent number 9,455,150
- Issue date Sep 27, 2016
- Intel Corporation
- Scott B. Clendenning
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electropositive metal containing layers for semiconductor applications
- Patent number 9,390,932
- Issue date Jul 12, 2016
- Intel Corporation
- Patricio E. Romero
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of forming a metal from a cobalt metal precursor
- Patent number 9,385,033
- Issue date Jul 5, 2016
- Intel Corporation
- James M. Blackwell
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Selective area deposition of metal films by atomic layer deposition...
- Patent number 9,236,292
- Issue date Jan 12, 2016
- Intel Corporation
- Patricio E. Romero
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Additives to improve the performance of a precursor source for coba...
- Patent number 9,090,964
- Issue date Jul 28, 2015
- Intel Corporation
- James M. Blackwell
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Scalable and high yield synthesis of transition metal bis-diazabuta...
- Patent number 9,067,958
- Issue date Jun 30, 2015
- Intel Corporation
- Patricio E. Romero
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Electropositive metal containing layers for semiconductor applications
- Patent number 8,952,355
- Issue date Feb 10, 2015
- Intel Corporation
- Patricio E. Romero
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
SCANDIUM PRECURSOR FOR SC2O3 OR SC2S3 ATOMIC LAYER DEPOSITION
- Publication number 20240092804
- Publication date Mar 21, 2024
- Intel Corporation
- Patricio E. ROMERO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SCANDIUM PRECURSOR FOR SC2O3 OR SC2S3 ATOMIC LAYER DEPOSITION
- Publication number 20230058025
- Publication date Feb 23, 2023
- Intel Corporation
- Patricio E. ROMERO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SELECTIVE GATE SPACERS FOR SEMICONDUCTOR DEVICES
- Publication number 20210143265
- Publication date May 13, 2021
- Intel Corporation
- Scott B. CLENDENNING
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PASSIVATION LAYER FOR GERMANIUM SUBSTRATE
- Publication number 20200168462
- Publication date May 28, 2020
- Patricio E. ROMERO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE GATE SPACERS FOR SEMICONDUCTOR DEVICES
- Publication number 20200020786
- Publication date Jan 16, 2020
- Intel Corporation
- Scott B. CLENDENNING
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCANDIUM PRECURSOR FOR SC2O3 OR SC2S3 ATOMIC LAYER DEPOSITION
- Publication number 20190202842
- Publication date Jul 4, 2019
- Intel Corporation
- Patricio E. ROMERO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SELECTIVE DEPOSITION UTILIZING SACRIFICIAL BLOCKING LAYERS FOR SEMI...
- Publication number 20190189803
- Publication date Jun 20, 2019
- Intel Corporation
- Grant KLOSTER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INHERENTLY SELECTIVE PRECURSORS FOR DEPOSITION OF SECOND OR THIRD R...
- Publication number 20180222933
- Publication date Aug 9, 2018
- Intel Corporation
- Patricio E. ROMERO
- C07 - ORGANIC CHEMISTRY
Information Patent Application
SELECTIVE GATE SPACERS FOR SEMICONDUCTOR DEVICES
- Publication number 20180219080
- Publication date Aug 2, 2018
- Intel Corporation
- Scott B. CLENDENNING
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSITION METAL DRY ETCH BY ATOMIC LAYER REMOVAL OF OXIDE LAYERS F...
- Publication number 20180138054
- Publication date May 17, 2018
- Intel Corporation
- Patricio E. ROMERO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE DEPOSITION UTILIZING SACRIFICIAL BLOCKING LAYERS FOR SEMI...
- Publication number 20170330972
- Publication date Nov 16, 2017
- Intel Corporation
- GRANT KLOSTER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE DIFFUSION BARRIER BETWEEN METALS OF AN INTEGRATED CIRCUIT...
- Publication number 20170148739
- Publication date May 25, 2017
- Jeanette M. ROBERTS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Precursor and Process Design for Photo-Assisted Metal Atomic Layer...
- Publication number 20170058401
- Publication date Mar 2, 2017
- Intel Corporation
- James M. BLACKWELL
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
FORMING LAYERS OF MATERIALS OVER SMALL REGIONS BY SELECTIV CHEMICAL...
- Publication number 20160190060
- Publication date Jun 30, 2016
- Intel Corporation
- Robert L. Bristol
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS AND MATERIAL FOR PREVENTING DELETERIOUS EXPANSION OF HIGH A...
- Publication number 20160163596
- Publication date Jun 9, 2016
- Intel Corporation
- Paul A. Zimmerman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE AREA DEPOSITION OF METAL FILMS BY ATOMIC LAYER DEPOSITION...
- Publication number 20160086850
- Publication date Mar 24, 2016
- Patricio E. Romero
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTROPOSITIVE METAL CONTAINING LAYERS FOR SEMICONDUCTOR APPLICATIONS
- Publication number 20150243508
- Publication date Aug 27, 2015
- Intel Corporation
- Patricio E. Romero
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ADDITIVES TO IMPROVE THE PERFORMANCE OF A PRECURSOR SOURCE FOR COBA...
- Publication number 20150176119
- Publication date Jun 25, 2015
- James M. Blackwell
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
CONFORMAL THIN FILM DEPOSITION OF ELECTROPOSITIVE METAL ALLOY FILMS
- Publication number 20150179798
- Publication date Jun 25, 2015
- SCOTT B. CLENDENNING
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE AREA DEPOSITION OF METAL FILMS BY ATOMIC LAYER DEPOSITION...
- Publication number 20150170961
- Publication date Jun 18, 2015
- Patricio E. Romero
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Scalable And High Yield Synthesis Of Transition Metal Bis-Diazabuta...
- Publication number 20150105573
- Publication date Apr 16, 2015
- Patricio E. Romero
- C07 - ORGANIC CHEMISTRY
Information Patent Application
COBALT METAL PRECURSORS
- Publication number 20150093890
- Publication date Apr 2, 2015
- James M. Blackwell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS AND MATERIAL FOR PREVENTING DELETERIOUS EXPANSION OF HIGH A...
- Publication number 20140117559
- Publication date May 1, 2014
- Paul A. Zimmerman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTROPOSITIVE METAL CONTAINING LAYERS FOR SEMICONDUCTOR APPLICATIONS
- Publication number 20130270513
- Publication date Oct 17, 2013
- Patricio E. Romero
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
ATOMIC LAYER DEPOSITION OF A COPPER-CONTAINING SEED LAYER
- Publication number 20120070981
- Publication date Mar 22, 2012
- Scott B. Clendenning
- H01 - BASIC ELECTRIC ELEMENTS

Patricio E. ROMERO

Person

Patents Grantslast 30 patents

Scandium precursor for SC2O3 or SC2S3 atomic layer deposition

Selective gate spacers for semiconductor devices

Scandium precursor for SC2O3 or SC2S3 atomic layer deposition

Passivation layer for germanium substrate

Selective gate spacers for semiconductor devices

Selective deposition utilizing sacrificial blocking layers for semi...

Inherently selective precursors for deposition of second or third r...

Selective gate spacers for semiconductor devices

Selective deposition utilizing sacrificial blocking layers for semi...

Transition metal dry etch by atomic layer removal of oxide layers f...

Precursor and process design for photo-assisted metal atomic layer...

Process and material for preventing deleterious expansion of high a...

Selective area deposition of metal films by atomic layer deposition...

Forming layers of materials over small regions by selective chemica...

Conformal thin film deposition of electropositive metal alloy films

Electropositive metal containing layers for semiconductor applications

Method of forming a metal from a cobalt metal precursor

Selective area deposition of metal films by atomic layer deposition...

Additives to improve the performance of a precursor source for coba...

Scalable and high yield synthesis of transition metal bis-diazabuta...

Electropositive metal containing layers for semiconductor applications

Patents Applicationslast 30 patents

SCANDIUM PRECURSOR FOR SC2O3 OR SC2S3 ATOMIC LAYER DEPOSITION

SCANDIUM PRECURSOR FOR SC2O3 OR SC2S3 ATOMIC LAYER DEPOSITION

SELECTIVE GATE SPACERS FOR SEMICONDUCTOR DEVICES

PASSIVATION LAYER FOR GERMANIUM SUBSTRATE

SELECTIVE GATE SPACERS FOR SEMICONDUCTOR DEVICES

SCANDIUM PRECURSOR FOR SC2O3 OR SC2S3 ATOMIC LAYER DEPOSITION

SELECTIVE DEPOSITION UTILIZING SACRIFICIAL BLOCKING LAYERS FOR SEMI...

INHERENTLY SELECTIVE PRECURSORS FOR DEPOSITION OF SECOND OR THIRD R...

SELECTIVE GATE SPACERS FOR SEMICONDUCTOR DEVICES

TRANSITION METAL DRY ETCH BY ATOMIC LAYER REMOVAL OF OXIDE LAYERS F...

SELECTIVE DEPOSITION UTILIZING SACRIFICIAL BLOCKING LAYERS FOR SEMI...

SELECTIVE DIFFUSION BARRIER BETWEEN METALS OF AN INTEGRATED CIRCUIT...

Precursor and Process Design for Photo-Assisted Metal Atomic Layer...

FORMING LAYERS OF MATERIALS OVER SMALL REGIONS BY SELECTIV CHEMICAL...

PROCESS AND MATERIAL FOR PREVENTING DELETERIOUS EXPANSION OF HIGH A...

SELECTIVE AREA DEPOSITION OF METAL FILMS BY ATOMIC LAYER DEPOSITION...

ELECTROPOSITIVE METAL CONTAINING LAYERS FOR SEMICONDUCTOR APPLICATIONS

ADDITIVES TO IMPROVE THE PERFORMANCE OF A PRECURSOR SOURCE FOR COBA...

CONFORMAL THIN FILM DEPOSITION OF ELECTROPOSITIVE METAL ALLOY FILMS

SELECTIVE AREA DEPOSITION OF METAL FILMS BY ATOMIC LAYER DEPOSITION...

Scalable And High Yield Synthesis Of Transition Metal Bis-Diazabuta...

COBALT METAL PRECURSORS

PROCESS AND MATERIAL FOR PREVENTING DELETERIOUS EXPANSION OF HIGH A...

ELECTROPOSITIVE METAL CONTAINING LAYERS FOR SEMICONDUCTOR APPLICATIONS

ATOMIC LAYER DEPOSITION OF A COPPER-CONTAINING SEED LAYER