Patrick H. KEYS

Person

Portland, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Lateral gate material arrangements for quantum dot devices
- Patent number 12,230,687
- Issue date Feb 18, 2025
- Intel Corporation
- Roza Kotlyar
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Fin doping and integrated circuit structures resulting therefrom
- Patent number 12,199,098
- Issue date Jan 14, 2025
- Intel Corporation
- Aaron D. Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertically stacked finFETs and shared gate patterning
- Patent number 12,100,623
- Issue date Sep 24, 2024
- Intel Corporation
- Aaron Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire structures having wrap-around contacts
- Patent number 11,757,026
- Issue date Sep 12, 2023
- Google LLC
- Stephen M. Cea
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Removal of a bottom-most nanowire from a nanowire device stack
- Patent number 11,527,613
- Issue date Dec 13, 2022
- Intel Corporation
- Aaron Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple strain states in epitaxial transistor channel through the...
- Patent number 11,495,683
- Issue date Nov 8, 2022
- Intel Corporation
- Aaron Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having underlying dop...
- Patent number 11,469,299
- Issue date Oct 11, 2022
- Intel Corporation
- Glenn Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertically stacked finFETs and shared gate patterning
- Patent number 11,404,319
- Issue date Aug 2, 2022
- Intel Corporation
- Aaron Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quantum dot devices with strain control
- Patent number 11,183,564
- Issue date Nov 23, 2021
- Intel Corporation
- Nicole K. Thomas
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Hexagonal arrays for quantum dot devices
- Patent number 11,107,891
- Issue date Aug 31, 2021
- Intel Corporation
- Ravi Pillarisetty
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Methods and apparatus to remove epitaxial defects in semiconductors
- Patent number 10,978,590
- Issue date Apr 13, 2021
- Intel Corporation
- Aaron D. Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Retrograde transistor doping by heterojunction materials
- Patent number 10,896,907
- Issue date Jan 19, 2021
- Intel Corporation
- Patrick H. Keys
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Removal of a bottom-most nanowire from a nanowire device stack
- Patent number 10,892,326
- Issue date Jan 12, 2021
- Intel Corporation
- Aaron Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire structures having wrap-around contacts
- Patent number 10,840,366
- Issue date Nov 17, 2020
- Intel Corporation
- Stephen M. Cea
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Stacked channel structures for MOSFETs
- Patent number 10,790,281
- Issue date Sep 29, 2020
- Intel Corporation
- Rishabh Mehandru
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin strain in quantum dot devices
- Patent number 10,665,770
- Issue date May 26, 2020
- Intel Corporation
- Ravi Pillarisetty
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Deep EPI enabled by backside reveal for stress enhancement and contact
- Patent number 10,636,907
- Issue date Apr 28, 2020
- Intel Corporation
- Aaron D. Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire structures having wrap-around contacts
- Patent number 10,483,385
- Issue date Nov 19, 2019
- Intel Corporation
- Stephen M. Cea
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device with isolated body portion
- Patent number 10,026,829
- Issue date Jul 17, 2018
- Intel Corporation
- Annalisa Cappellani
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device with isolated body portion
- Patent number 9,608,059
- Issue date Mar 28, 2017
- Intel Corporation
- Annalisa Cappellani
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method to reduce junction leakage through partial regrowth with ult...
- Patent number 7,790,587
- Issue date Sep 7, 2010
- Intel Corporation
- Jack Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a shallow junction
- Patent number 6,936,505
- Issue date Aug 30, 2005
- Intel Corporation
- Patrick H. Keys
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INTEGRATED CIRCUIT STRUCTURES HAVING METAL-CONTAINING SOURCE OR DRA...
- Publication number 20230095007
- Publication date Mar 30, 2023
- Intel Corporation
- Rishabh MEHANDRU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURES WITH REDUCED SOURCE/DRAIN LEAKAGE THROUGH BAC...
- Publication number 20230097948
- Publication date Mar 30, 2023
- Intel Corporation
- Rishabh Mehandru
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DOPED SUBFIN
- Publication number 20230088753
- Publication date Mar 23, 2023
- Intel Corporation
- Stephen M. Cea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH SOURCE & DRAIN ETCH STOP
- Publication number 20220415708
- Publication date Dec 29, 2022
- Intel Corporation
- Rishabh Mehandru
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING UNDERLYING DOP...
- Publication number 20220416024
- Publication date Dec 29, 2022
- Intel Corporation
- Glenn GLASS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICALLY STACKED FINFETS & SHARED GATE PATTERNING
- Publication number 20220336284
- Publication date Oct 20, 2022
- Intel Corporation
- Aaron Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN DOPING AND INTEGRATED CIRCUIT STRUCTURES RESULTING THEREFROM
- Publication number 20220310601
- Publication date Sep 29, 2022
- Intel Corporation
- Aaron D. LILAK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL GATE MATERIAL ARRANGEMENTS FOR QUANTUM DOT DEVICES
- Publication number 20220190135
- Publication date Jun 16, 2022
- Roza Kotlyar
- B82 - NANO-TECHNOLOGY
Information Patent Application
MULTIPLE STRAIN STATES IN EPITAXIAL TRANSISTOR CHANNEL THROUGH THE...
- Publication number 20210257492
- Publication date Aug 19, 2021
- Intel Corporation
- Aaron Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REMOVAL OF A BOTTOM-MOST NANOWIRE FROM A NANOWIRE DEVICE STACK
- Publication number 20210159312
- Publication date May 27, 2021
- Intel Corporation
- Aaron Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOWIRE STRUCTURES HAVING WRAP-AROUND CONTACTS
- Publication number 20210036137
- Publication date Feb 4, 2021
- Intel Corporation
- Stephen M. CEA
- B82 - NANO-TECHNOLOGY
Information Patent Application
HEXAGONAL ARRAYS FOR QUANTUM DOT DEVICES
- Publication number 20200321436
- Publication date Oct 8, 2020
- Intel Corporation
- Ravi Pillarisetty
- B82 - NANO-TECHNOLOGY
Information Patent Application
VERTICALLY STACKED FINFETS & SHARED GATE PATTERNING
- Publication number 20200235013
- Publication date Jul 23, 2020
- Intel Corporation
- Aaron Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING UNDERLYING DOP...
- Publication number 20200105872
- Publication date Apr 2, 2020
- Intel Corporation
- Glenn GLASS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOWIRE STRUCTURES HAVING WRAP-AROUND CONTACTS
- Publication number 20200035818
- Publication date Jan 30, 2020
- Intel Corporation
- Stephen M. CEA
- B82 - NANO-TECHNOLOGY
Information Patent Application
REMOVAL OF A BOTTOM-MOST NANOWIRE FROM A NANOWIRE DEVICE STACK
- Publication number 20190333990
- Publication date Oct 31, 2019
- Intel Corporation
- Aaron Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RETROGRADE TRANSISTOR DOPING BY HETEROJUNCTION MATERIALS
- Publication number 20190237466
- Publication date Aug 1, 2019
- Intel Corporation
- Patrick H. KEYS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND APPARATUS TO REMOVE EPITAXIAL DEFECTS IN SEMICONDUCTORS
- Publication number 20190189795
- Publication date Jun 20, 2019
- Intel Corporation
- Aaron D. Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN STRAIN IN QUANTUM DOT DEVICES
- Publication number 20190044050
- Publication date Feb 7, 2019
- Intel Corporation
- Ravi Pillarisetty
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
QUANTUM DOT DEVICES WITH STRAIN CONTROL
- Publication number 20190043951
- Publication date Feb 7, 2019
- Intel Corporation
- Nicole K. Thomas
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
STACKED CHANNEL STRUCTURES FOR MOSFETS
- Publication number 20180323195
- Publication date Nov 8, 2018
- Intel Corporation
- Rishabh Mehandru
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEEP EPI ENABLED BY BACKSIDE REVEAL FOR STRESS ENHANCEMENT & CONTACT
- Publication number 20180212057
- Publication date Jul 26, 2018
- Intel Corporation
- Aaron D. LILAK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CARBON-BASED INTERFACE FOR EPITAXIALLY GROWN SOURCE/DRAIN TRANSISTO...
- Publication number 20180151733
- Publication date May 31, 2018
- Intel Corporation
- GLENN A. GLASS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH ISOLATED BODY PORTION
- Publication number 20170162676
- Publication date Jun 8, 2017
- Intel Corporation
- Annalisa CAPPELLANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOWIRE STRUCTURES HAVING WRAP-AROUND CONTACTS
- Publication number 20140209855
- Publication date Jul 31, 2014
- Stephen M. Cea
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR DEVICE WITH ISOLATED BODY PORTION
- Publication number 20130320455
- Publication date Dec 5, 2013
- Annalisa Cappellani
- B82 - NANO-TECHNOLOGY
Information Patent Application
Method to reduce junction leakage through partial regrowth with ult...
- Publication number 20080121882
- Publication date May 29, 2008
- Jack Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Implant and anneal amorphization process
- Publication number 20070099404
- Publication date May 3, 2007
- Sridhar Govindaraju
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Strained field effect transistors
- Publication number 20060292776
- Publication date Dec 28, 2006
- Been-Yih Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming a shallow junction
- Publication number 20040235280
- Publication date Nov 25, 2004
- Patrick H. Keys
- H01 - BASIC ELECTRIC ELEMENTS

Patrick H. KEYS

Person

Patents Grantslast 30 patents

Lateral gate material arrangements for quantum dot devices

Fin doping and integrated circuit structures resulting therefrom

Vertically stacked finFETs and shared gate patterning

Nanowire structures having wrap-around contacts

Removal of a bottom-most nanowire from a nanowire device stack

Multiple strain states in epitaxial transistor channel through the...

Gate-all-around integrated circuit structures having underlying dop...

Vertically stacked finFETs and shared gate patterning

Quantum dot devices with strain control

Hexagonal arrays for quantum dot devices

Methods and apparatus to remove epitaxial defects in semiconductors

Retrograde transistor doping by heterojunction materials

Removal of a bottom-most nanowire from a nanowire device stack

Nanowire structures having wrap-around contacts

Stacked channel structures for MOSFETs

Fin strain in quantum dot devices

Deep EPI enabled by backside reveal for stress enhancement and contact

Nanowire structures having wrap-around contacts

Semiconductor device with isolated body portion

Semiconductor device with isolated body portion

Method to reduce junction leakage through partial regrowth with ult...

Method of forming a shallow junction

Patents Applicationslast 30 patents

INTEGRATED CIRCUIT STRUCTURES HAVING METAL-CONTAINING SOURCE OR DRA...

TRANSISTOR STRUCTURES WITH REDUCED SOURCE/DRAIN LEAKAGE THROUGH BAC...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DOPED SUBFIN

TRANSISTORS WITH SOURCE & DRAIN ETCH STOP

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING UNDERLYING DOP...

VERTICALLY STACKED FINFETS & SHARED GATE PATTERNING

FIN DOPING AND INTEGRATED CIRCUIT STRUCTURES RESULTING THEREFROM

LATERAL GATE MATERIAL ARRANGEMENTS FOR QUANTUM DOT DEVICES

MULTIPLE STRAIN STATES IN EPITAXIAL TRANSISTOR CHANNEL THROUGH THE...

REMOVAL OF A BOTTOM-MOST NANOWIRE FROM A NANOWIRE DEVICE STACK

NANOWIRE STRUCTURES HAVING WRAP-AROUND CONTACTS

HEXAGONAL ARRAYS FOR QUANTUM DOT DEVICES

VERTICALLY STACKED FINFETS & SHARED GATE PATTERNING

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING UNDERLYING DOP...

NANOWIRE STRUCTURES HAVING WRAP-AROUND CONTACTS

REMOVAL OF A BOTTOM-MOST NANOWIRE FROM A NANOWIRE DEVICE STACK

RETROGRADE TRANSISTOR DOPING BY HETEROJUNCTION MATERIALS

METHODS AND APPARATUS TO REMOVE EPITAXIAL DEFECTS IN SEMICONDUCTORS

FIN STRAIN IN QUANTUM DOT DEVICES

QUANTUM DOT DEVICES WITH STRAIN CONTROL

STACKED CHANNEL STRUCTURES FOR MOSFETS

DEEP EPI ENABLED BY BACKSIDE REVEAL FOR STRESS ENHANCEMENT & CONTACT

CARBON-BASED INTERFACE FOR EPITAXIALLY GROWN SOURCE/DRAIN TRANSISTO...

SEMICONDUCTOR DEVICE WITH ISOLATED BODY PORTION

NANOWIRE STRUCTURES HAVING WRAP-AROUND CONTACTS

SEMICONDUCTOR DEVICE WITH ISOLATED BODY PORTION

Method to reduce junction leakage through partial regrowth with ult...

Implant and anneal amorphization process

Strained field effect transistors

Method of forming a shallow junction