Paul A. Grudowski

Person

Austin, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Lateral semiconductor device having raised source and drain, and me...
- Patent number 11,222,961
- Issue date Jan 11, 2022
- NXP B.V.
- Viet Dinh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising a PN junction diode
- Patent number 10,580,906
- Issue date Mar 3, 2020
- NXP B.V.
- Viet Thanh Dinh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including an active region and two layers havi...
- Patent number 9,847,389
- Issue date Dec 19, 2017
- NXP USA, INC.
- Brian A. Winstead
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate security feature
- Patent number 8,980,734
- Issue date Mar 17, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Tab A. Stephens
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including an active region and two layers havi...
- Patent number 8,569,858
- Issue date Oct 29, 2013
- FREESCALE SEMICONDUCTOR, INC.
- Brian A. Winstead
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of forming an electronic device including insulating layers...
- Patent number 8,021,957
- Issue date Sep 20, 2011
- FREESCALE SEMICONDUCTOR, INC.
- Paul A. Grudowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device including insulating layers having different strains
- Patent number 7,843,011
- Issue date Nov 30, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Paul A. Grudowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a via
- Patent number 7,745,298
- Issue date Jun 29, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Tab A. Stephens
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a semiconductor device with embedded stressor
- Patent number 7,736,957
- Issue date Jun 15, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Paul A. Grudowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device including a transistor structure having an active...
- Patent number 7,714,318
- Issue date May 11, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Vance H. Adams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multilayer silicon nitride deposition for a semiconductor device
- Patent number 7,700,499
- Issue date Apr 20, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Kurt H. Junker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of a semiconductor device with stressor
- Patent number 7,687,354
- Issue date Mar 30, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Paul A. Grudowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device with multiple tensile stre...
- Patent number 7,678,698
- Issue date Mar 16, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Xiangzheng Bo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Disposable organic spacers
- Patent number 7,579,228
- Issue date Aug 25, 2009
- FREESCALE SEMICONDUCTOR, INC.
- Paul A. Grudowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor process integrating source/drain stressors and interl...
- Patent number 7,538,002
- Issue date May 26, 2009
- FREESCALE SEMICONDUCTOR, INC.
- Da Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stressor integration and method thereof
- Patent number 7,528,029
- Issue date May 5, 2009
- FREESCALE SEMICONDUCTOR, INC.
- Paul A. Grudowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having stressors and method for forming
- Patent number 7,511,360
- Issue date Mar 31, 2009
- FREESCALE SEMICONDUCTOR, INC.
- Mehul D. Shroff
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming an electronic device including transistor struc...
- Patent number 7,504,289
- Issue date Mar 17, 2009
- FREESCALE SEMICONDUCTOR, INC.
- Sangwoo Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Undoped gate poly integration for improved gate patterning and coba...
- Patent number 7,491,630
- Issue date Feb 17, 2009
- FREESCALE SEMICONDUCTOR, INC.
- Mehul D. Shroff
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an interlayer dielectric
- Patent number 7,442,598
- Issue date Oct 28, 2008
- FREESCALE SEMICONDUCTOR, INC.
- Paul A. Grudowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device including a transistor structure having an active...
- Patent number 7,420,202
- Issue date Sep 2, 2008
- FREESCALE SEMICONDUCTOR, INC.
- Vance H. Adams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Anneal of epitaxial layer in a semiconductor device
- Patent number 7,416,605
- Issue date Aug 26, 2008
- FREESCALE SEMICONDUCTOR, INC.
- Stefan Zollner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a nitrided gate dielectric
- Patent number 7,402,472
- Issue date Jul 22, 2008
- FREESCALE SEMICONDUCTOR, INC.
- Sangwoo Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an electronic device
- Patent number 7,214,590
- Issue date May 8, 2007
- FREESCALE SEMICONDUCTOR, INC.
- Sangwoo Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor sidewall spacer stress modulation
- Patent number 7,132,704
- Issue date Nov 7, 2006
- FREESCALE SEMICONDUCTOR, INC.
- Paul A. Grudowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor sidewall spacer stress modulation
- Patent number 6,902,971
- Issue date Jun 7, 2005
- FREESCALE SEMICONDUCTOR, INC.
- Paul A. Grudowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor fabrication process using transistor spacers of diffe...
- Patent number 6,864,135
- Issue date Mar 8, 2005
- FREESCALE SEMICONDUCTOR, INC.
- Paul A. Grudowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device and method therefor
- Patent number 6,846,716
- Issue date Jan 25, 2005
- FREESCALE SEMICONDUCTOR, INC.
- Geoffrey C-F Yeap
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of preventing two neighboring contacts from a short-circuit...
- Patent number 6,369,430
- Issue date Apr 9, 2002
- Motorola, Inc.
- Olubunmi O. Adetutu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
LATERAL SEMICONDUCTOR DEVICE HAVING RAISED SOURCE AND DRAIN, AND ME...
- Publication number 20200343368
- Publication date Oct 29, 2020
- NXP B.V.
- Viet Dinh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Security Feature
- Publication number 20140252487
- Publication date Sep 11, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Tab A. Stephens
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING AN ACTIVE REGION AND TWO LAYERS HAVI...
- Publication number 20140054704
- Publication date Feb 27, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Brian A. Winstead
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTILAYER SILICON NITRIDE DEPOSITION FOR A SEMICONDUCTOR DEVICE
- Publication number 20110210401
- Publication date Sep 1, 2011
- Freescale Semiconductor Inc.
- Kurt H. Junker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS OF FORMING AN ELECTRONIC DEVICE INCLUDING INSULATING LAYERS...
- Publication number 20110003444
- Publication date Jan 6, 2011
- FREESCALE SEMICONDUCTOR, INC.
- Paul A. Grudowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF A SEMICONDUCTOR DEVICE WITH STRESSOR
- Publication number 20090221119
- Publication date Sep 3, 2009
- Paul A. Grudowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A VIA
- Publication number 20090142895
- Publication date Jun 4, 2009
- Tab A. Stephens
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Disposable organic spacers
- Publication number 20090017587
- Publication date Jan 15, 2009
- Freescale Semiconductor, Inc.
- Paul A. Grudowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE INCLUDING A TRANSISTOR STRUCTURE HAVING AN ACTIVE...
- Publication number 20080296633
- Publication date Dec 4, 2008
- FREESCALE SEMICONDUCTOR, INC.
- Vance H. Adams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING A SEMICONDUCTOR DEVICE WITH EMBEDDED STRESSOR
- Publication number 20080299724
- Publication date Dec 4, 2008
- Paul A. Grudowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH STRESSORS AND METHODS THEREOF
- Publication number 20080293192
- Publication date Nov 27, 2008
- Stefan Zollner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH MULTIPLE TENSILE STRESSOR LAYERS AND METHOD
- Publication number 20080272411
- Publication date Nov 6, 2008
- Xiangzheng Bo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE INCLUDING INSULATING LAYERS HAVING DIFFERENT STRA...
- Publication number 20080179679
- Publication date Jul 31, 2008
- FREESCALE SEMICONDUCTOR, INC.
- Paul A. Grudowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multilayer silicon nitride deposition for a semiconductor device
- Publication number 20080173908
- Publication date Jul 24, 2008
- Freescale Semiconductor, Inc.
- Kurt H. Junker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multilayer silicon nitride deposition for a semiconductor device
- Publication number 20080173986
- Publication date Jul 24, 2008
- Freescale Semiconductor, Inc.
- Kurt H. Junker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANNEAL OF EPITAXIAL LAYER IN A SEMICONDUCTOR DEVICE
- Publication number 20080163813
- Publication date Jul 10, 2008
- Stefan Zollner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT HAVING TENSILE AND COMPRESSIVE REGIONS
- Publication number 20080150072
- Publication date Jun 26, 2008
- Brian A. Winstead
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING A STRESSOR LAYER
- Publication number 20080026517
- Publication date Jan 31, 2008
- Paul A. Grudowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Stressor integration and method thereof
- Publication number 20070249113
- Publication date Oct 25, 2007
- Freescale Semiconductor, Inc.
- Paul A. Grudowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Undoped gate poly integration for improved gate patterning and coba...
- Publication number 20070218661
- Publication date Sep 20, 2007
- Mehul D. Shroff
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor process integrating source/drain stressors and interl...
- Publication number 20070202651
- Publication date Aug 30, 2007
- Freescale Semiconductor, Inc.
- Da Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for improving self-aligned silicide extendibility with space...
- Publication number 20070197011
- Publication date Aug 23, 2007
- Freescale Semiconductor Inc.
- Anadi Srivastava
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Poly pre-doping anneals for improved gate profiles
- Publication number 20070196988
- Publication date Aug 23, 2007
- Mehul D. Shroff
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having stressors and method for forming
- Publication number 20070132031
- Publication date Jun 14, 2007
- Mehul D. Shroff
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electronic device including a transistor structure having an active...
- Publication number 20070102755
- Publication date May 10, 2007
- FREESCALE SEMICONDUCTOR, INC.
- Vance H. Adams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electronic device including transistor structures with sidewall spa...
- Publication number 20070090455
- Publication date Apr 26, 2007
- FREESCALE SEMICONDUCTOR, INC.
- Sangwoo Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for integration of a low-k pre-metal dielectric
- Publication number 20070049006
- Publication date Mar 1, 2007
- Gregory Spencer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming an interlayer dielectric
- Publication number 20060281240
- Publication date Dec 14, 2006
- Paul A. Grudowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming an electronic device
- Publication number 20060223266
- Publication date Oct 5, 2006
- FREESCALE SEMICONDUCTOR, INC.
- Sangwoo Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of making a nitrided gate dielectric
- Publication number 20060194423
- Publication date Aug 31, 2006
- Sangwoo Lim
- H01 - BASIC ELECTRIC ELEMENTS

Paul A. Grudowski

Person

Patents Grantslast 30 patents

Lateral semiconductor device having raised source and drain, and me...

Semiconductor device comprising a PN junction diode

Semiconductor device including an active region and two layers havi...

Gate security feature

Semiconductor device including an active region and two layers havi...

Process of forming an electronic device including insulating layers...

Electronic device including insulating layers having different strains

Method of forming a via

Method of making a semiconductor device with embedded stressor

Electronic device including a transistor structure having an active...

Multilayer silicon nitride deposition for a semiconductor device

Fabrication of a semiconductor device with stressor

Method of forming a semiconductor device with multiple tensile stre...

Disposable organic spacers

Semiconductor process integrating source/drain stressors and interl...

Stressor integration and method thereof

Semiconductor device having stressors and method for forming

Process for forming an electronic device including transistor struc...

Undoped gate poly integration for improved gate patterning and coba...

Method of forming an interlayer dielectric

Electronic device including a transistor structure having an active...

Anneal of epitaxial layer in a semiconductor device

Method of making a nitrided gate dielectric

Method of forming an electronic device

Transistor sidewall spacer stress modulation

Transistor sidewall spacer stress modulation

Semiconductor fabrication process using transistor spacers of diffe...

Integrated circuit device and method therefor

Method of preventing two neighboring contacts from a short-circuit...

Patents Applicationslast 30 patents

LATERAL SEMICONDUCTOR DEVICE HAVING RAISED SOURCE AND DRAIN, AND ME...

Gate Security Feature

SEMICONDUCTOR DEVICE INCLUDING AN ACTIVE REGION AND TWO LAYERS HAVI...

MULTILAYER SILICON NITRIDE DEPOSITION FOR A SEMICONDUCTOR DEVICE

PROCESS OF FORMING AN ELECTRONIC DEVICE INCLUDING INSULATING LAYERS...

FABRICATION OF A SEMICONDUCTOR DEVICE WITH STRESSOR

METHOD OF FORMING A VIA

Disposable organic spacers

ELECTRONIC DEVICE INCLUDING A TRANSISTOR STRUCTURE HAVING AN ACTIVE...

METHOD OF MAKING A SEMICONDUCTOR DEVICE WITH EMBEDDED STRESSOR

SEMICONDUCTOR DEVICE WITH STRESSORS AND METHODS THEREOF

SEMICONDUCTOR DEVICE WITH MULTIPLE TENSILE STRESSOR LAYERS AND METHOD

ELECTRONIC DEVICE INCLUDING INSULATING LAYERS HAVING DIFFERENT STRA...

Multilayer silicon nitride deposition for a semiconductor device

Multilayer silicon nitride deposition for a semiconductor device

ANNEAL OF EPITAXIAL LAYER IN A SEMICONDUCTOR DEVICE

INTEGRATED CIRCUIT HAVING TENSILE AND COMPRESSIVE REGIONS

METHOD FOR FORMING A STRESSOR LAYER

Stressor integration and method thereof

Undoped gate poly integration for improved gate patterning and coba...

Semiconductor process integrating source/drain stressors and interl...

Method for improving self-aligned silicide extendibility with space...

Poly pre-doping anneals for improved gate profiles

Semiconductor device having stressors and method for forming

Electronic device including a transistor structure having an active...

Electronic device including transistor structures with sidewall spa...

Method for integration of a low-k pre-metal dielectric

Method of forming an interlayer dielectric

Method of forming an electronic device

Method of making a nitrided gate dielectric