Paul A. Ingersoll

Person

Austin, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
First inter-layer dielectric stack for non-volatile memory
- Patent number 8,435,898
- Issue date May 7, 2013
- FREESCALE SEMICONDUCTOR, INC.
- Olubunmi O. Adetutu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device including gate lines, bit lines, or a combination...
- Patent number 7,642,594
- Issue date Jan 5, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Gowrishankar L. Chindalore
- G11 - INFORMATION STORAGE
Information Patent Grant
Electronic device including discontinuous storage elements
- Patent number 7,619,270
- Issue date Nov 17, 2009
- FREESCALE SEMICONDUCTOR, INC.
- Gowrishankar L. Chindalore
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of fabricating a storage device including decontinuous stora...
- Patent number 7,592,224
- Issue date Sep 22, 2009
- FREESCALE SEMICONDUCTOR, INC.
- Craig T. Swift
- G11 - INFORMATION STORAGE
Information Patent Grant
Nanocrystal bitcell process integration for high density application
- Patent number 7,491,600
- Issue date Feb 17, 2009
- FREESCALE SEMICONDUCTOR, INC.
- Erwin J. Prinz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory device with improved data retention and method...
- Patent number 7,432,547
- Issue date Oct 7, 2008
- FREESCALE SEMICONDUCTOR, INC.
- Gowrishankar L. Chindalore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory cell array for improved data retention and meth...
- Patent number 7,259,999
- Issue date Aug 21, 2007
- FREESCALE SEMICONDUCTOR, INC.
- Ronald J. Syzdek
- G11 - INFORMATION STORAGE
Information Patent Grant
Process for forming an electronic device including discontinuous st...
- Patent number 7,211,487
- Issue date May 1, 2007
- FREESCALE SEMICONDUCTOR, INC.
- Gowrishankar L. Chindalore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure and method for forming
- Patent number 7,208,390
- Issue date Apr 24, 2007
- FREESCALE SEMICONDUCTOR, INC.
- Rana P. Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a memory structure using a modified surface topo...
- Patent number 6,991,984
- Issue date Jan 31, 2006
- FREESCALE SEMICONDUCTOR, INC.
- Paul A. Ingersoll
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Erase of a memory having a non-conductive storage medium
- Patent number 6,898,129
- Issue date May 24, 2005
- FREESCALE SEMICONDUCTOR, INC.
- Craig T. Swift
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory device and method for forming
- Patent number 6,887,758
- Issue date May 3, 2005
- FREESCALE SEMICONDUCTOR, INC.
- Gowrishankar L. Chindalore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for uniform polish in microelectronic device
- Patent number 6,770,929
- Issue date Aug 3, 2004
- FREESCALE SEMICONDUCTOR, INC.
- Rana P. Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory device having an anti-punch through (APT) region
- Patent number 6,713,812
- Issue date Mar 30, 2004
- Motorola, Inc.
- Alexander B. Hoefler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure and method for forming
- Patent number 6,518,146
- Issue date Feb 11, 2003
- Motorola, Inc.
- Rana P. Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for uniform polish in microelectronic device
- Patent number 6,358,816
- Issue date Mar 19, 2002
- Motorola, Inc.
- Rana P. Singh
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
First inter-layer dielectric stack for non-volatile memory
- Publication number 20080248649
- Publication date Oct 9, 2008
- Olubunmi O. Adetutu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Programmable structure including control gate overlying select gate...
- Publication number 20070238249
- Publication date Oct 11, 2007
- Freescale Semiconductor, Inc.
- Craig T. Swift
- G11 - INFORMATION STORAGE
Information Patent Application
Nanocrystal bitcell process integration for high density application
- Publication number 20070105306
- Publication date May 10, 2007
- Freescale Semiconductor, Inc.
- Erwin J. Prinz
- B82 - NANO-TECHNOLOGY
Information Patent Application
Non-volatile memory cell array for improved data retention and meth...
- Publication number 20070091690
- Publication date Apr 26, 2007
- FREESCALE SEMICONDUCTOR, INC.
- Ronald J. Syzdek
- G11 - INFORMATION STORAGE
Information Patent Application
Process for forming an electronic device including discontinuous st...
- Publication number 20070020857
- Publication date Jan 25, 2007
- FREESCALE SEMICONDUCTOR, INC.
- Gowrishankar L. Chindalore
- B82 - NANO-TECHNOLOGY
Information Patent Application
Electronic device including discontinuous storage elements
- Publication number 20070018216
- Publication date Jan 25, 2007
- FREESCALE SEMICONDUCTOR, INC.
- Gowrishankar L. Chindalore
- G11 - INFORMATION STORAGE
Information Patent Application
Electronic device including gate lines, bit lines, or a combination...
- Publication number 20070018234
- Publication date Jan 25, 2007
- FREESCALE SEMICONDUCTOR, INC.
- Gowrishankar L. Chindalore
- G11 - INFORMATION STORAGE
Information Patent Application
Method for forming a memory structure using a modified surface topo...
- Publication number 20050161731
- Publication date Jul 28, 2005
- Paul A. Ingersoll
- B82 - NANO-TECHNOLOGY
Information Patent Application
Non-volatile memory device with improved data retention and method...
- Publication number 20040159881
- Publication date Aug 19, 2004
- Gowrishankar L. Chindalore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Erase of a memory having a non-conductive storage medium
- Publication number 20040080984
- Publication date Apr 29, 2004
- Craig T. Swift
- G11 - INFORMATION STORAGE
Information Patent Application
Non-volatile memory device and method for forming
- Publication number 20040070030
- Publication date Apr 15, 2004
- Gowrishankar L. Chindalore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-volatile memory device with improved data retention and method...
- Publication number 20030113962
- Publication date Jun 19, 2003
- Gowrishankar L. Chindalore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device structure and method for forming
- Publication number 20030098492
- Publication date May 29, 2003
- Rana P. Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for uniform polish in microelectronic device
- Publication number 20020037628
- Publication date Mar 28, 2002
- Rana P. Singh
- H01 - BASIC ELECTRIC ELEMENTS

Paul A. Ingersoll

Person

Patents Grantslast 30 patents

First inter-layer dielectric stack for non-volatile memory

Electronic device including gate lines, bit lines, or a combination...

Electronic device including discontinuous storage elements

Method of fabricating a storage device including decontinuous stora...

Nanocrystal bitcell process integration for high density application

Non-volatile memory device with improved data retention and method...

Non-volatile memory cell array for improved data retention and meth...

Process for forming an electronic device including discontinuous st...

Semiconductor device structure and method for forming

Method for forming a memory structure using a modified surface topo...

Erase of a memory having a non-conductive storage medium

Non-volatile memory device and method for forming

Method for uniform polish in microelectronic device

Non-volatile memory device having an anti-punch through (APT) region

Semiconductor device structure and method for forming

Method for uniform polish in microelectronic device

Patents Applicationslast 30 patents

First inter-layer dielectric stack for non-volatile memory

Programmable structure including control gate overlying select gate...

Nanocrystal bitcell process integration for high density application

Non-volatile memory cell array for improved data retention and meth...

Process for forming an electronic device including discontinuous st...

Electronic device including discontinuous storage elements

Electronic device including gate lines, bit lines, or a combination...

Method for forming a memory structure using a modified surface topo...

Non-volatile memory device with improved data retention and method...

Erase of a memory having a non-conductive storage medium

Non-volatile memory device and method for forming

Non-volatile memory device with improved data retention and method...

Semiconductor device structure and method for forming

Method for uniform polish in microelectronic device