Paul Arthur Layman

Person

Orlando, FL, US

People

Patents Grantslast 30 patents

Information Patent Grant
Vertical replacement-gate silicon-on-insulator transistor
- Patent number 7,259,048
- Issue date Aug 21, 2007
- Agere Systems, INC
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layer inductor formed in a semiconductor substrate and having...
- Patent number 7,132,297
- Issue date Nov 7, 2006
- Agere Systems Inc.
- Michelle D. Griglione
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical replacement-gate silicon-on-insulator transistor
- Patent number 7,078,280
- Issue date Jul 18, 2006
- Agere Systems Inc.
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple operating voltage vertical replacement-gate (VRG) transistor
- Patent number 7,056,783
- Issue date Jun 6, 2006
- Agere Systems Inc.
- Paul Arthur Layman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of ion implantation for achieving desired dopant concentration
- Patent number 7,049,199
- Issue date May 23, 2006
- Agere Systems Inc.
- Paul Arthur Layman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-density inter-die interconnect structure
- Patent number 7,045,835
- Issue date May 16, 2006
- Agere Systems Inc.
- Paul Arthur Layman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical replacement-gate junction field-effect transistor
- Patent number 7,033,877
- Issue date Apr 25, 2006
- Agere Systems Inc.
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for defining the initial state of static random access memory
- Patent number 6,906,962
- Issue date Jun 14, 2005
- Agere Systems Inc.
- Paul Arthur Layman
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatus and method for detecting alpha particles
- Patent number 6,828,561
- Issue date Dec 7, 2004
- Agere Systems Inc.
- Paul Arthur Layman
- G01 - MEASURING TESTING
Information Patent Grant
Bipolar junction transistor compatible with vertical replacement ga...
- Patent number 6,759,730
- Issue date Jul 6, 2004
- Agere Systems Inc.
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic fingerprinting of semiconductor integrated circuits
- Patent number 6,738,294
- Issue date May 18, 2004
- Agere Systems Inc.
- Paul Arthur Layman
- G11 - INFORMATION STORAGE
Information Patent Grant
Vertical replacement-gate silicon-on-insulator transistor
- Patent number 6,709,904
- Issue date Mar 23, 2004
- Agere Systems Inc.
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical replacement-gate junction field-effect transistor
- Patent number 6,690,040
- Issue date Feb 10, 2004
- Agere Systems Inc.
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple operating voltage vertical replacement-gate (VRG) transistor
- Patent number 6,686,604
- Issue date Feb 3, 2004
- Agere Systems Inc.
- Paul Arthur Layman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film multi-layer high Q transformer formed in a semiconductor...
- Patent number 6,667,536
- Issue date Dec 23, 2003
- Agere Systems Inc.
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layer inductor formed in a semiconductor substrate
- Patent number 6,639,298
- Issue date Oct 28, 2003
- Agere Systems Inc.
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
A Vertical Replacement-Gate Silicon-On-Insulator Transistor
- Publication number 20070111414
- Publication date May 17, 2007
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical replacement-gate junction field-effect transistor
- Publication number 20060166429
- Publication date Jul 27, 2006
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-density inter-die interconnect structure
- Publication number 20060166395
- Publication date Jul 27, 2006
- Paul Arthur Layman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-layer inductor formed in a semiconductor substrate and having...
- Publication number 20050170554
- Publication date Aug 4, 2005
- Michelle D. Griglione
- B82 - NANO-TECHNOLOGY
Information Patent Application
Multiple operating voltage vertical replacement-gate (VRG) transistor
- Publication number 20050048709
- Publication date Mar 3, 2005
- Paul Arthur Layman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and fabrication method for capacitors integratible with v...
- Publication number 20040188737
- Publication date Sep 30, 2004
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical replacement-gate silicon-on-insulator transistor
- Publication number 20040155264
- Publication date Aug 12, 2004
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical replacement-gate junction field-effect transistor
- Publication number 20040110345
- Publication date Jun 10, 2004
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Apparatus and method for detecting alpha particles
- Publication number 20040061060
- Publication date Apr 1, 2004
- Paul Arthur Layman
- G01 - MEASURING TESTING
Information Patent Application
Method for defining the initial state of static random access memory
- Publication number 20040062083
- Publication date Apr 1, 2004
- Paul Arthur Layman
- G11 - INFORMATION STORAGE
Information Patent Application
ELECTRONIC FINGERPRINTING OF SEMICONDUCTOR INTEGRATED CIRCUITS
- Publication number 20040062084
- Publication date Apr 1, 2004
- Paul Arthur Layman
- G11 - INFORMATION STORAGE
Information Patent Application
High-density inter-die interconnect structure
- Publication number 20040026771
- Publication date Feb 12, 2004
- Paul Arthur Layman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of ion implantation for achieving desired dopant concentration
- Publication number 20040014303
- Publication date Jan 22, 2004
- Paul Arthur Layman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical replacement-gate silicon-on-insulator transistor
- Publication number 20030064567
- Publication date Apr 3, 2003
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of ion implantation for achieving desired dopant concentration
- Publication number 20030064550
- Publication date Apr 3, 2003
- Paul Arthur Layman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multiple operating voltage vertical replacement-gate (VRG) transistor
- Publication number 20030060015
- Publication date Mar 27, 2003
- Paul Arthur Layman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and fabrication method for capacitors integratible with v...
- Publication number 20030052365
- Publication date Mar 20, 2003
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bipolar junction transistor compatible with vertical replacement ga...
- Publication number 20030052721
- Publication date Mar 20, 2003
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical replacement-gate junction field-effect transistor
- Publication number 20030047749
- Publication date Mar 13, 2003
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-density inter-die interconnect structure
- Publication number 20030049925
- Publication date Mar 13, 2003
- Paul Arthur Layman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thin film multi-layer high Q transformer formed in a semiconductor...
- Publication number 20030003603
- Publication date Jan 2, 2003
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-layer inductor formed in a semiconductor substrate
- Publication number 20030001231
- Publication date Jan 2, 2003
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS

Paul Arthur Layman

Person

Patents Grantslast 30 patents

Vertical replacement-gate silicon-on-insulator transistor

Multi-layer inductor formed in a semiconductor substrate and having...

Vertical replacement-gate silicon-on-insulator transistor

Multiple operating voltage vertical replacement-gate (VRG) transistor

Method of ion implantation for achieving desired dopant concentration

High-density inter-die interconnect structure

Vertical replacement-gate junction field-effect transistor

Method for defining the initial state of static random access memory

Apparatus and method for detecting alpha particles

Bipolar junction transistor compatible with vertical replacement ga...

Electronic fingerprinting of semiconductor integrated circuits

Vertical replacement-gate silicon-on-insulator transistor

Vertical replacement-gate junction field-effect transistor

Multiple operating voltage vertical replacement-gate (VRG) transistor

Thin film multi-layer high Q transformer formed in a semiconductor...

Multi-layer inductor formed in a semiconductor substrate

Patents Applicationslast 30 patents

A Vertical Replacement-Gate Silicon-On-Insulator Transistor

Vertical replacement-gate junction field-effect transistor

High-density inter-die interconnect structure

Multi-layer inductor formed in a semiconductor substrate and having...

Multiple operating voltage vertical replacement-gate (VRG) transistor

Structure and fabrication method for capacitors integratible with v...

Vertical replacement-gate silicon-on-insulator transistor

Vertical replacement-gate junction field-effect transistor

Apparatus and method for detecting alpha particles

Method for defining the initial state of static random access memory

ELECTRONIC FINGERPRINTING OF SEMICONDUCTOR INTEGRATED CIRCUITS

High-density inter-die interconnect structure

Method of ion implantation for achieving desired dopant concentration

Vertical replacement-gate silicon-on-insulator transistor

Method of ion implantation for achieving desired dopant concentration

Multiple operating voltage vertical replacement-gate (VRG) transistor

Structure and fabrication method for capacitors integratible with v...

Bipolar junction transistor compatible with vertical replacement ga...

Vertical replacement-gate junction field-effect transistor

High-density inter-die interconnect structure

Thin film multi-layer high Q transformer formed in a semiconductor...

Multi-layer inductor formed in a semiconductor substrate