Paul Chang

Person

Mahopac, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device having self-aligned gate contacts
- Patent number 9,941,129
- Issue date Apr 10, 2018
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Performance optimized gate structures having memory device and logi...
- Patent number 9,761,679
- Issue date Sep 12, 2017
- International Business Machines Corporation
- Paul Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming performance optimized gate structures by silicidi...
- Patent number 9,735,058
- Issue date Aug 15, 2017
- International Business Machines Corporation
- Paul Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buffer layer for modulating Vt across devices
- Patent number 9,722,045
- Issue date Aug 1, 2017
- GLOBALFOUNDRIES Inc.
- Bhupesh Chandra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compact model for device/circuit/chip leakage current (IDDQ) calcul...
- Patent number 9,639,652
- Issue date May 2, 2017
- GLOBALFOUNDRIES Inc.
- Paul Chang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Silicided nanowires for nanobridge weak links
- Patent number 9,559,284
- Issue date Jan 31, 2017
- GLOBALFOUNDRIES Inc.
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having self-aligned gate contacts
- Patent number 9,484,205
- Issue date Nov 1, 2016
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming performance optimized gate structures by silicidi...
- Patent number 9,455,195
- Issue date Sep 27, 2016
- International Business Machines Corporation
- Paul Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded planar source/drain stressors for a finFET including a plu...
- Patent number 9,443,951
- Issue date Sep 13, 2016
- GLOBALFOUNDRIES Inc.
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Faceted intrinsic epitaxial buffer layer for reducing short channel...
- Patent number 9,287,399
- Issue date Mar 15, 2016
- International Business Machines Corporation
- Bhupesh Chandra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
6T SRAM architecture for gate-all-around nanowire devices
- Patent number 9,034,704
- Issue date May 19, 2015
- International Business Machines Corporation
- Karthik Balakrishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded planar source/drain stressors for a finFET including a plu...
- Patent number 9,024,355
- Issue date May 5, 2015
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
6T SRAM architecture for gate-all-around nanowire devices
- Patent number 9,000,530
- Issue date Apr 7, 2015
- International Business Machines Corporation
- Karthik Balakrishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and system for analysis and management of parametric yield
- Patent number 8,997,028
- Issue date Mar 31, 2015
- Mentor Graphics Corporation
- James A. Culp
- G01 - MEASURING TESTING
Information Patent Grant
Recessed source and drain regions for FinFETs
- Patent number 8,981,478
- Issue date Mar 17, 2015
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Faceted intrinsic epitaxial buffer layer for reducing short channel...
- Patent number 8,940,595
- Issue date Jan 27, 2015
- International Business Machines Corporation
- Bhupesh Chandra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-replacement gate nanomesh field effect transistor with pad regions
- Patent number 8,900,959
- Issue date Dec 2, 2014
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gap-fill keyhole repair using printable dielectric material
- Patent number 8,836,087
- Issue date Sep 16, 2014
- International Business Machines Corporation
- Paul Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-replacement gate nanomesh field effect transistor with epitixia...
- Patent number 8,796,742
- Issue date Aug 5, 2014
- International Business Machines Corporation
- Josephine B. Chang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Non-replacement gate nanomesh field effect transistor with pad regions
- Patent number 8,785,981
- Issue date Jul 22, 2014
- International Business Machines Corporation
- Josephine B. Chang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Non-replacement gate nanomesh field effect transistor with epitixia...
- Patent number 8,778,768
- Issue date Jul 15, 2014
- International Business Machines Corporation
- Josephine B. Chang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Collapsable gate for deposited nanostructures
- Patent number 8,779,414
- Issue date Jul 15, 2014
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial source/drain contacts self-aligned to gates for deposited...
- Patent number 8,754,403
- Issue date Jun 17, 2014
- International Business Machines Corporation
- Josephine B. Chang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Formation of dividers between gate ends of field effect transistor...
- Patent number 8,741,722
- Issue date Jun 3, 2014
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gap-fill keyhole repair using printable dielectric material
- Patent number 8,703,576
- Issue date Apr 22, 2014
- International Business Machines Corporation
- Paul Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self aligned impact-ionization MOS (I-MOS) device and methods of ma...
- Patent number 8,652,916
- Issue date Feb 18, 2014
- International Business Machines Corporation
- Roger A. Booth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-planar MOSFET structures with asymmetric recessed source drains...
- Patent number 8,637,371
- Issue date Jan 28, 2014
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compact model for device/circuit/chip leakage current (IDDQ) calcul...
- Patent number 8,626,480
- Issue date Jan 7, 2014
- International Business Machines Corporation
- Paul Chang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Raised isolation structure self-aligned to fin structures
- Patent number 8,586,449
- Issue date Nov 19, 2013
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Recessed source and drain regions for FinFETs
- Patent number 8,557,648
- Issue date Oct 15, 2013
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
BUFFER LAYER FOR MODULATING Vt ACROSS DEVICES
- Publication number 20170117387
- Publication date Apr 27, 2017
- GLOBALFOUNDRIES INC.
- Bhupesh Chandra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERFORMANCE OPTIMIZED GATE STRUCTURES
- Publication number 20160322258
- Publication date Nov 3, 2016
- International Business Machines Corporation
- Paul CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING SELF-ALIGNED GATE CONTACTS
- Publication number 20160300762
- Publication date Oct 13, 2016
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICIDED NANOWIRES FOR NANOBRIDGE WEAK LINKS
- Publication number 20160276570
- Publication date Sep 22, 2016
- GLOBALFOUNDRIES INC.
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERFORMANCE OPTIMIZED GATE STRUCTURES
- Publication number 20160197144
- Publication date Jul 7, 2016
- International Business Machines Corporation
- Paul CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERFORMANCE OPTIMIZED GATE STRUCTURES
- Publication number 20160163599
- Publication date Jun 9, 2016
- International Business Machines Corporation
- Paul CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING SELF-ALIGNED GATE CONTACTS
- Publication number 20150287603
- Publication date Oct 8, 2015
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FACETED INTRINSIC EPITAXIAL BUFFER LAYER FOR REDUCING SHORT CHANNEL...
- Publication number 20150084096
- Publication date Mar 26, 2015
- International Business Machines Corporation
- Bhupesh Chandra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
6T SRAM ARCHITECTURE FOR GATE-ALL-AROUND NANOWIRE DEVICES
- Publication number 20140312426
- Publication date Oct 23, 2014
- International Business Machines Corporation
- Karthik Balakrishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
6T SRAM Architecture For Gate-All-Around Nanowire Devices
- Publication number 20140315363
- Publication date Oct 23, 2014
- International Business Machines Corporation
- Karthik Balakrishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FACETED INTRINSIC EPITAXIAL BUFFER LAYER FOR REDUCING SHORT CHANNEL...
- Publication number 20140264558
- Publication date Sep 18, 2014
- International Business Machines Corporation
- Bhupesh Chandra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-REPLACEMENT GATE NANOMESH FIELD EFFECT TRANSISTOR WITH PAD REGIONS
- Publication number 20140264276
- Publication date Sep 18, 2014
- International Business Machines Corporation
- Josephine B. Chang
- B82 - NANO-TECHNOLOGY
Information Patent Application
FIN FIELD EFFECT TRANSISTORS INCLUDING COMPLIMENTARILY STRESSED CHA...
- Publication number 20140151756
- Publication date Jun 5, 2014
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID NANOMESH STRUCTURES
- Publication number 20140151638
- Publication date Jun 5, 2014
- International Business Machines Corporation
- Josephine B. Chang
- B82 - NANO-TECHNOLOGY
Information Patent Application
NANOMESH COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR FIELD EFFECT TRANS...
- Publication number 20140151639
- Publication date Jun 5, 2014
- International Business Machines Corporation
- Josephine B. Chang
- B82 - NANO-TECHNOLOGY
Information Patent Application
GAP-FILL KEYHOLE REPAIR USING PRINTABLE DIELECTRIC MATERIAL
- Publication number 20140131817
- Publication date May 15, 2014
- International Business Machines Corporation
- Paul Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPACT MODEL FOR DEVICE/CIRCUIT/CHIP LEAKAGE CURRENT (IDDQ) CALCUL...
- Publication number 20140123097
- Publication date May 1, 2014
- International Business Machines Corporation
- Paul Chang
- G01 - MEASURING TESTING
Information Patent Application
EMBEDDED PLANAR SOURCE/DRAIN STRESSORS FOR A FINFET INCLUDING A PLU...
- Publication number 20140065774
- Publication date Mar 6, 2014
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED PLANAR SOURCE/DRAIN STRESSORS FOR A FINFET INCLUDING A PLU...
- Publication number 20130320399
- Publication date Dec 5, 2013
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COLLAPSABLE GATE FOR DEPOSITED NANOSTRUCTURES
- Publication number 20130288434
- Publication date Oct 31, 2013
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND SYSTEM FOR ANALYSIS AND MANAGEMENT OF PARAMETRIC YIELD
- Publication number 20130238263
- Publication date Sep 12, 2013
- Mentor Graphics Corporation
- James A. Culp
- G01 - MEASURING TESTING
Information Patent Application
NON-PLANAR MOSFET STRUCTURES WITH ASYMMETRIC RECESSED SOURCE DRAINS...
- Publication number 20130214357
- Publication date Aug 22, 2013
- International Business Machines Corporation
- JOSEPHINE B. CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RECESSED SOURCE AND DRAIN REGIONS FOR FINFETS
- Publication number 20130175623
- Publication date Jul 11, 2013
- International Business Machines Corporation
- JOSEPHINE B. CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RECESSED SOURCE AND DRAIN REGIONS FOR FINFETS
- Publication number 20130175624
- Publication date Jul 11, 2013
- International Business Machines Corporation
- JOSEPHINE B. CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gap-Fill Keyhole Repair Using Printable Dielectric Material
- Publication number 20130062709
- Publication date Mar 14, 2013
- International Business Machines Corporation
- Paul Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Formation of Field Effect Transistor Devices
- Publication number 20120329227
- Publication date Dec 27, 2012
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COLLAPSABLE GATE FOR DEPOSITED NANOSTRUCTURES
- Publication number 20120326127
- Publication date Dec 27, 2012
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Formation of Field Effect Transistor Devices
- Publication number 20120306000
- Publication date Dec 6, 2012
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL SOURCE/DRAIN CONTACTS SELF-ALIGNED TO GATES FOR DEPOSITED...
- Publication number 20120292598
- Publication date Nov 22, 2012
- International Business Machines Corporation
- Josephine B. Chang
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHODS AND SYSTEM FOR ANALYSIS AND MANAGEMENT OF PARAMETRIC YIELD
- Publication number 20120227019
- Publication date Sep 6, 2012
- International Business Machines Corporation
- James A. Culp
- G06 - COMPUTING CALCULATING COUNTING

Person

Patents Grantslast 30 patents

Semiconductor device having self-aligned gate contacts

Performance optimized gate structures having memory device and logi...

Method of forming performance optimized gate structures by silicidi...

Buffer layer for modulating Vt across devices

Compact model for device/circuit/chip leakage current (IDDQ) calcul...

Silicided nanowires for nanobridge weak links

Semiconductor device having self-aligned gate contacts

Method of forming performance optimized gate structures by silicidi...

Embedded planar source/drain stressors for a finFET including a plu...

Faceted intrinsic epitaxial buffer layer for reducing short channel...

6T SRAM architecture for gate-all-around nanowire devices

Embedded planar source/drain stressors for a finFET including a plu...

6T SRAM architecture for gate-all-around nanowire devices

Methods and system for analysis and management of parametric yield

Recessed source and drain regions for FinFETs

Faceted intrinsic epitaxial buffer layer for reducing short channel...

Non-replacement gate nanomesh field effect transistor with pad regions

Gap-fill keyhole repair using printable dielectric material

Non-replacement gate nanomesh field effect transistor with epitixia...

Non-replacement gate nanomesh field effect transistor with pad regions

Non-replacement gate nanomesh field effect transistor with epitixia...

Collapsable gate for deposited nanostructures

Epitaxial source/drain contacts self-aligned to gates for deposited...

Formation of dividers between gate ends of field effect transistor...

Gap-fill keyhole repair using printable dielectric material

Self aligned impact-ionization MOS (I-MOS) device and methods of ma...

Non-planar MOSFET structures with asymmetric recessed source drains...

Compact model for device/circuit/chip leakage current (IDDQ) calcul...

Raised isolation structure self-aligned to fin structures

Recessed source and drain regions for FinFETs

Patents Applicationslast 30 patents

BUFFER LAYER FOR MODULATING Vt ACROSS DEVICES

PERFORMANCE OPTIMIZED GATE STRUCTURES

SEMICONDUCTOR DEVICE HAVING SELF-ALIGNED GATE CONTACTS

SILICIDED NANOWIRES FOR NANOBRIDGE WEAK LINKS

PERFORMANCE OPTIMIZED GATE STRUCTURES

PERFORMANCE OPTIMIZED GATE STRUCTURES

SEMICONDUCTOR DEVICE HAVING SELF-ALIGNED GATE CONTACTS

FACETED INTRINSIC EPITAXIAL BUFFER LAYER FOR REDUCING SHORT CHANNEL...

6T SRAM ARCHITECTURE FOR GATE-ALL-AROUND NANOWIRE DEVICES

6T SRAM Architecture For Gate-All-Around Nanowire Devices

FACETED INTRINSIC EPITAXIAL BUFFER LAYER FOR REDUCING SHORT CHANNEL...

NON-REPLACEMENT GATE NANOMESH FIELD EFFECT TRANSISTOR WITH PAD REGIONS

FIN FIELD EFFECT TRANSISTORS INCLUDING COMPLIMENTARILY STRESSED CHA...

HYBRID NANOMESH STRUCTURES

NANOMESH COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR FIELD EFFECT TRANS...

GAP-FILL KEYHOLE REPAIR USING PRINTABLE DIELECTRIC MATERIAL

COMPACT MODEL FOR DEVICE/CIRCUIT/CHIP LEAKAGE CURRENT (IDDQ) CALCUL...

EMBEDDED PLANAR SOURCE/DRAIN STRESSORS FOR A FINFET INCLUDING A PLU...

EMBEDDED PLANAR SOURCE/DRAIN STRESSORS FOR A FINFET INCLUDING A PLU...

COLLAPSABLE GATE FOR DEPOSITED NANOSTRUCTURES

METHODS AND SYSTEM FOR ANALYSIS AND MANAGEMENT OF PARAMETRIC YIELD

NON-PLANAR MOSFET STRUCTURES WITH ASYMMETRIC RECESSED SOURCE DRAINS...

RECESSED SOURCE AND DRAIN REGIONS FOR FINFETS

RECESSED SOURCE AND DRAIN REGIONS FOR FINFETS

Gap-Fill Keyhole Repair Using Printable Dielectric Material

Formation of Field Effect Transistor Devices

COLLAPSABLE GATE FOR DEPOSITED NANOSTRUCTURES

Formation of Field Effect Transistor Devices

EPITAXIAL SOURCE/DRAIN CONTACTS SELF-ALIGNED TO GATES FOR DEPOSITED...

METHODS AND SYSTEM FOR ANALYSIS AND MANAGEMENT OF PARAMETRIC YIELD