Paul D. Hurwitz

Person

Irvine, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Field effect transistors with reduced leakage current
- Patent number 11,955,555
- Issue date Apr 9, 2024
- Newport Fab, LLC
- Rula Badarneh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing body-source-tied SOI transistor
- Patent number 11,756,823
- Issue date Sep 12, 2023
- Newport Fab, LLC
- Allan K Calvo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Body-source-tied semiconductor-on-insulator (SOI) transistor
- Patent number 11,581,215
- Issue date Feb 14, 2023
- Newport Fab, LLC
- Allan K Calvo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having porous semiconductor segment for RF...
- Patent number 11,195,920
- Issue date Dec 7, 2021
- Newport Fab, LLC
- Paul D. Hurwitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor-on-insulator (SOI) device with reduced parasitic capa...
- Patent number 11,164,892
- Issue date Nov 2, 2021
- Newport Fab, LLC
- Paul D. Hurwitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having porous semiconductor layer for RF de...
- Patent number 11,164,740
- Issue date Nov 2, 2021
- Newport Fab, LLC
- Paul D. Hurwitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power handling improvements for phase-change material (PCM) radio f...
- Patent number 11,031,555
- Issue date Jun 8, 2021
- Newport Fab, LLC
- Nabil El-Hinnawy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High performance SiGe heterojunction bipolar transistors built on t...
- Patent number 10,991,631
- Issue date Apr 27, 2021
- Newport Fab, LLC
- Edward J. Preisler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked phase-change material (PCM) radio frequency (RF) switches w...
- Patent number 10,916,585
- Issue date Feb 9, 2021
- Newport Fab, LLC
- Nabil El-Hinnawy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radio frequency (RF) switch with improved power handling
- Patent number 10,686,486
- Issue date Jun 16, 2020
- Newport Fab, LLC
- Roda Kanawati
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
High performance SiGe heterojunction bipolar transistors built on t...
- Patent number 10,622,262
- Issue date Apr 14, 2020
- Newport Fab. LLC
- Edward J. Preisler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High power RF switches using multiple optimized transistors and met...
- Patent number 10,587,233
- Issue date Mar 10, 2020
- Newport Fab, LLC
- Paul D. Hurwitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wide contact structure for small footprint radio frequency (RF) switch
- Patent number 10,586,870
- Issue date Mar 10, 2020
- Newport Fab, LLC
- Roda Kanawati
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dynamic impedance circuit for uniform voltage distribution in a hig...
- Patent number 10,530,357
- Issue date Jan 7, 2020
- Newport Fab, LLC
- Roda Kanawati
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-linear shunt circuit for third order harmonic reduction in RF s...
- Patent number 10,469,121
- Issue date Nov 5, 2019
- Newport Fab, LLC
- Paul D. Hurwitz
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Linearity and lateral isolation in a BiCMOS process through counter...
- Patent number 10,347,625
- Issue date Jul 9, 2019
- Newport Fab, LLC
- Kurt A. Moen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate isolation for low-loss radio frequency (RF) circuits
- Patent number 10,325,907
- Issue date Jun 18, 2019
- Newport Fab, LLC dba Jazz Semiconductor, Inc.
- Kurt A. Moen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bent polysilicon gate structure for small footprint radio frequency...
- Patent number 10,325,833
- Issue date Jun 18, 2019
- Newport Fab, LLC
- Roda Kanawati
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate isolation for low-loss radio frequency (RF) circuits
- Patent number 10,319,716
- Issue date Jun 11, 2019
- Newport Fab, LLC
- Kurt A. Moen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Linearity and lateral isolation in a BiCMOS process through counter...
- Patent number 10,290,631
- Issue date May 14, 2019
- Newport Fab, LLC
- Kurt A. Moen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bulk CMOS RF switch with reduced parasitic capacitance
- Patent number 10,177,045
- Issue date Jan 8, 2019
- Newport Fab, LLC
- Edward J. Preisler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bulk CMOS RF switch with reduced parasitic capacitance
- Patent number 10,177,044
- Issue date Jan 8, 2019
- Newport Fab, LLC
- Edward J. Preisler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Copper interconnect for improving radio frequency (RF) silicon-on-i...
- Patent number 10,062,644
- Issue date Aug 28, 2018
- Newport Fab, LLC
- David J. Howard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to fabricate both FD-SOI and PD-SOI devices within a single...
- Patent number 10,062,712
- Issue date Aug 28, 2018
- Newport Fab, LLC
- Kurt A. Moen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High power RF switches using multiple optimized transistors
- Patent number 10,044,331
- Issue date Aug 7, 2018
- Newport Fab, LLC
- Paul D. Hurwitz
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Reduced substrate effects in monolithically integrated RF circuits
- Patent number 9,966,301
- Issue date May 8, 2018
- New Fab, LLC
- David J. Howard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for mitigating substrate parasitics in bulk hi...
- Patent number 9,941,353
- Issue date Apr 10, 2018
- Newport Fab, LLC
- Paul D. Hurwitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid MOS-PCM CMOS SOI switch
- Patent number 9,917,104
- Issue date Mar 13, 2018
- Tower Semiconductor Ltd.
- Yakov Roizin
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Integrated passive device having improved linearity and isolation
- Patent number 9,754,814
- Issue date Sep 5, 2017
- Newport Fab, LLC
- Paul D. Hurwitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective amorphization for signal isolation and linearity
- Patent number 9,634,089
- Issue date Apr 25, 2017
- Newport Fab, LLC
- Paul D. Hurwitz
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Field Effect Transistors with Reduced Leakage Current
- Publication number 20230395722
- Publication date Dec 7, 2023
- Newport Fab, LLC dba Tower Semiconductor Newport Beach
- Rula BADARNEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Body-Source-Tied Transistor
- Publication number 20230128785
- Publication date Apr 27, 2023
- NEWPORT FAB, LLC DBA JAZZ SEMICONDUCTOR
- Allan K. Calvo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method For Manufacturing Body-Source-Tied SOI Transistor
- Publication number 20220352007
- Publication date Nov 3, 2022
- NEWPORT FAB, LLC DBA JAZZ SEMICONDUCTOR
- Allan K. Calvo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Body-Source-Tied Semiconductor-On-Insulator (SOI) Transistor
- Publication number 20220020633
- Publication date Jan 20, 2022
- Newport Fab, LLC dba Jazz Semiconductor.
- Allan K. Calvo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Forming a Semiconductor Structure Having a Porous Semico...
- Publication number 20210375618
- Publication date Dec 2, 2021
- NEWPORT FAB, LLC DBA JAZZ SEMICONDUCTOR
- Paul D. Hurwitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structure Having Porous Semiconductor Layer for RF De...
- Publication number 20210111019
- Publication date Apr 15, 2021
- Newport Fab, LLC dba Jazz Semiconductor.
- Paul D. Hurwitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structure Having Porous Semiconductor Segment for RF...
- Publication number 20210111249
- Publication date Apr 15, 2021
- Newport Fab, LLC dba Jazz Semiconductor.
- Paul D. Hurwitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor-On-Insulator (SOI) Device with Reduced Parasitic Capa...
- Publication number 20210005630
- Publication date Jan 7, 2021
- NEWPORT FAB, LLC DBA JAZZ SEMICONDUCTOR
- Paul D. Hurwitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Handling Improvements for Phase-Change Material (PCM) Radio F...
- Publication number 20200335697
- Publication date Oct 22, 2020
- NEWPORT FAB, LLC DBA JAZZ SEMICONDUCTOR
- Nabil El-Hinnawy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Stacked Phase-Change Material (PCM) Radio Frequency (RF) Switches w...
- Publication number 20200058706
- Publication date Feb 20, 2020
- Newport Fab, LLC dba Jazz Semiconductor.
- Nabil El-Hinnawy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIDE CONTACT STRUCTURE FOR SMALL FOOTPRINT RADIO FREQUENCY (RF) SWITCH
- Publication number 20190259880
- Publication date Aug 22, 2019
- Newport Fab, LLC dba Jazz Semiconductor, Inc.
- Roda Kanawati
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Performance SiGe Heterojunction Bipolar Transistors Built On T...
- Publication number 20190109054
- Publication date Apr 11, 2019
- Newport Fab, LLC dba Jazz Semiconductor, Inc.
- Edward J. Preisler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH PERFORMANCE SiGe HETEROJUNCTION BIPOLAR TRANSISTORS BUILT ON T...
- Publication number 20190109055
- Publication date Apr 11, 2019
- Newport Fab, LLC dba Jazz Semiconductor, Inc.
- Edward J. Preisler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-linear Shunt Circuit For Third Order Harmonic Reduction In RF S...
- Publication number 20190089398
- Publication date Mar 21, 2019
- Newport Fab, LLC dba Jazz Semiconductor, Inc.
- Paul D. Hurwitz
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
LINEARITY AND LATERAL ISOLATION IN A BiCMOS PROCESS THROUGH COUNTER...
- Publication number 20190043855
- Publication date Feb 7, 2019
- Newport Fab, LLC dba Jazz Semiconductor, Inc.
- Kurt A. Moen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE ISOLATION FOR LOW-LOSS RADIO FREQUENCY (RF) CIRCUITS
- Publication number 20180374842
- Publication date Dec 27, 2018
- Newport Fab, LLC dba Jazz Semiconductor, Inc.
- Kurt A. Moen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bulk CMOS RF Switch With Reduced Parasitic Capacitance
- Publication number 20180323114
- Publication date Nov 8, 2018
- Newport Fab, LLC dba Jazz Semiconductor, Inc.
- Edward J. Preisler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bulk CMOS RF Switch With Reduced Parasitic Capacitance
- Publication number 20180323115
- Publication date Nov 8, 2018
- Newport Fab, LLC dba Jazz Semiconductor, Inc.
- Edward J. Preisler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Linearity and Lateral Isolation in a BiCMOS Process Through Counter...
- Publication number 20180323186
- Publication date Nov 8, 2018
- Newport Fab, LLC dba Jazz Semiconductor, Inc.
- Kurt A. Moen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH POWER RF SWITCHES USING MULTIPLE OPTIMIZED TRANSISTORS
- Publication number 20180323757
- Publication date Nov 8, 2018
- Newport Fab, LLC dba Jazz Semiconductor, Inc.
- Paul D. Hurwitz
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Substrate Isolation For Low-Loss Radio Frequency (RF) Circuits
- Publication number 20180323187
- Publication date Nov 8, 2018
- Newport Fab, LLC dba Jazz Semiconductor, Inc.
- Kurt A. Moen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Copper Interconnect For Improving Radio Frequency (RF) Silicon-On-I...
- Publication number 20180068941
- Publication date Mar 8, 2018
- Newport Fab, LLC dba Jazz Semiconductor, Inc.
- DAVID J. HOWARD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Tensile Contact Etch Stop Layer (CESL) For Radio Frequency (RF) Sil...
- Publication number 20180069035
- Publication date Mar 8, 2018
- Newport Fab, LLC dba Jazz Semiconductor, Inc.
- Paul D. Hurwitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reduced Substrate Effects in Monolithically Integrated RF Circuits
- Publication number 20170372945
- Publication date Dec 28, 2017
- Newport Fab, LLC dba Jazz Semiconductor.
- David J. Howard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NICKEL SILICIDE IMPLEMENTATION FOR SILICON-ON-INSULATOR (SOI) RADIO...
- Publication number 20170338321
- Publication date Nov 23, 2017
- Newport Fab, LLC dba Jazz Semiconductor, Inc.
- Paul D. Hurwitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and Method for Mitigating Substrate Parasitics in Bulk Hi...
- Publication number 20170338305
- Publication date Nov 23, 2017
- Newport Fab, LLC dba Jazz Semiconductor.
- Paul D. Hurwitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH POWER RF SWITCHES USING MULTIPLE OPTIMIZED TRANSISTORS
- Publication number 20160365850
- Publication date Dec 15, 2016
- Newport Fab, LLC dba Jazz Semiconductor, Inc.
- Paul D. Hurwitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having Reduced Drain-To-Source Capacitance
- Publication number 20160343813
- Publication date Nov 24, 2016
- NEWPORT FAB, LLC DBA JAZZ SEMICONDUCTOR
- Paul D. Hurwitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and Method for Reducing Substrate Parasitics in Semicondu...
- Publication number 20160071927
- Publication date Mar 10, 2016
- NEWPORT FAB, LLC DBA JAZZ SEMICONDUCTOR
- Paul D. Hurwitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selective Amorphization for Signal Isolation and Linearity
- Publication number 20140377935
- Publication date Dec 25, 2014
- Newport Fab, LLC dba Jazz Semiconductor.
- Paul D. Hurwitz
- H01 - BASIC ELECTRIC ELEMENTS

Paul D. Hurwitz

Person

Patents Grantslast 30 patents

Field effect transistors with reduced leakage current

Method for manufacturing body-source-tied SOI transistor

Body-source-tied semiconductor-on-insulator (SOI) transistor

Semiconductor structure having porous semiconductor segment for RF...

Semiconductor-on-insulator (SOI) device with reduced parasitic capa...

Semiconductor structure having porous semiconductor layer for RF de...

Power handling improvements for phase-change material (PCM) radio f...

High performance SiGe heterojunction bipolar transistors built on t...

Stacked phase-change material (PCM) radio frequency (RF) switches w...

Radio frequency (RF) switch with improved power handling

High performance SiGe heterojunction bipolar transistors built on t...

High power RF switches using multiple optimized transistors and met...

Wide contact structure for small footprint radio frequency (RF) switch

Dynamic impedance circuit for uniform voltage distribution in a hig...

Non-linear shunt circuit for third order harmonic reduction in RF s...

Linearity and lateral isolation in a BiCMOS process through counter...

Substrate isolation for low-loss radio frequency (RF) circuits

Bent polysilicon gate structure for small footprint radio frequency...

Substrate isolation for low-loss radio frequency (RF) circuits

Linearity and lateral isolation in a BiCMOS process through counter...

Bulk CMOS RF switch with reduced parasitic capacitance

Bulk CMOS RF switch with reduced parasitic capacitance

Copper interconnect for improving radio frequency (RF) silicon-on-i...

Method to fabricate both FD-SOI and PD-SOI devices within a single...

High power RF switches using multiple optimized transistors

Reduced substrate effects in monolithically integrated RF circuits

Structure and method for mitigating substrate parasitics in bulk hi...

Hybrid MOS-PCM CMOS SOI switch

Integrated passive device having improved linearity and isolation

Selective amorphization for signal isolation and linearity

Patents Applicationslast 30 patents

Field Effect Transistors with Reduced Leakage Current

Body-Source-Tied Transistor

Method For Manufacturing Body-Source-Tied SOI Transistor

Body-Source-Tied Semiconductor-On-Insulator (SOI) Transistor

Method for Forming a Semiconductor Structure Having a Porous Semico...

Semiconductor Structure Having Porous Semiconductor Layer for RF De...

Semiconductor Structure Having Porous Semiconductor Segment for RF...

Semiconductor-On-Insulator (SOI) Device with Reduced Parasitic Capa...

Power Handling Improvements for Phase-Change Material (PCM) Radio F...

Stacked Phase-Change Material (PCM) Radio Frequency (RF) Switches w...

WIDE CONTACT STRUCTURE FOR SMALL FOOTPRINT RADIO FREQUENCY (RF) SWITCH

High Performance SiGe Heterojunction Bipolar Transistors Built On T...

HIGH PERFORMANCE SiGe HETEROJUNCTION BIPOLAR TRANSISTORS BUILT ON T...

Non-linear Shunt Circuit For Third Order Harmonic Reduction In RF S...

LINEARITY AND LATERAL ISOLATION IN A BiCMOS PROCESS THROUGH COUNTER...

SUBSTRATE ISOLATION FOR LOW-LOSS RADIO FREQUENCY (RF) CIRCUITS

Bulk CMOS RF Switch With Reduced Parasitic Capacitance

Bulk CMOS RF Switch With Reduced Parasitic Capacitance

Linearity and Lateral Isolation in a BiCMOS Process Through Counter...

HIGH POWER RF SWITCHES USING MULTIPLE OPTIMIZED TRANSISTORS

Substrate Isolation For Low-Loss Radio Frequency (RF) Circuits

Copper Interconnect For Improving Radio Frequency (RF) Silicon-On-I...

Tensile Contact Etch Stop Layer (CESL) For Radio Frequency (RF) Sil...

Reduced Substrate Effects in Monolithically Integrated RF Circuits

NICKEL SILICIDE IMPLEMENTATION FOR SILICON-ON-INSULATOR (SOI) RADIO...

Structure and Method for Mitigating Substrate Parasitics in Bulk Hi...

HIGH POWER RF SWITCHES USING MULTIPLE OPTIMIZED TRANSISTORS

Semiconductor Device Having Reduced Drain-To-Source Capacitance

Structure and Method for Reducing Substrate Parasitics in Semicondu...

Selective Amorphization for Signal Isolation and Linearity