Paul M. Moore

Person

Foster City, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Insulated trench gates with multiple layers for improved performanc...
- Patent number 12,142,660
- Issue date Nov 12, 2024
- Pakal Technologies, Inc.
- Paul M. Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etch stop layer for injecting carriers into drift layer for a verti...
- Patent number 11,916,138
- Issue date Feb 27, 2024
- Pakal Technologies, Inc.
- Paul M Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated trench gates with dopants implanted through gate oxide
- Patent number 11,824,092
- Issue date Nov 21, 2023
- Pakal Technologies, Inc.
- Paul M. Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Anti-parallel diode formed using damaged crystal structure in a ver...
- Patent number 11,757,017
- Issue date Sep 12, 2023
- Pakal Technologies, Inc.
- Paul M Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
NPNP layered MOS-gated trench device having lowered operating voltage
- Patent number 11,610,987
- Issue date Mar 21, 2023
- Pakal Technologies, Inc.
- Paul M Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate power device with independently controlled segments
- Patent number 11,437,989
- Issue date Sep 6, 2022
- Pakal Technologies, Inc.
- Paul M. Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate turn-off device with designated breakdown areas betw...
- Patent number 11,114,552
- Issue date Sep 7, 2021
- Pakal Technologies, Inc.
- Paul M. Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DMOS transistor with trench schottky diode
- Patent number 9,780,204
- Issue date Oct 3, 2017
- Micrel, Inc.
- Jayasimha Swamy Prasad
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
DMOS transistor with trench schottky diode
- Patent number 9,530,880
- Issue date Dec 27, 2016
- Micrel, Inc.
- Jayasimha Swamy Prasad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS transistor with asymmetric spacer as gate
- Patent number 8,889,518
- Issue date Nov 18, 2014
- Micrel, Inc.
- Martin Alter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split slot FET with embedded drain
- Patent number 8,878,287
- Issue date Nov 4, 2014
- Micrel, Inc.
- Paul McKay Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS transistor with asymmetric spacer as gate
- Patent number 8,525,257
- Issue date Sep 3, 2013
- Micrel, Inc.
- Martin Alter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral DMOS field effect transistor with reduced threshold voltage...
- Patent number 8,120,105
- Issue date Feb 21, 2012
- Micrel, Inc.
- David R. Zinn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating non-volatile memory cells
- Patent number 7,514,318
- Issue date Apr 7, 2009
- Micrel, Inc.
- Paul M. Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Zero cost non-volatile memory cell with write and erase features
- Patent number 7,491,605
- Issue date Feb 17, 2009
- Micrel, Inc.
- Paul M. Moore
- G11 - INFORMATION STORAGE
Information Patent Grant
Single poly BiCMOS flash cell with floating body
- Patent number 7,449,754
- Issue date Nov 11, 2008
- Micrel, Incorporated
- Paul M. Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory cells
- Patent number 7,348,621
- Issue date Mar 25, 2008
- Micrel, Inc.
- Paul M. Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Zero-cost non-volatile memory cell with write and erase features
- Patent number 6,949,784
- Issue date Sep 27, 2005
- Micrel, Inc.
- Paul M. Moore
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
INSULATED GATE TURN-OFF DEVICE WITH SHORT CHANNEL PMOS TRANSISTOR
- Publication number 20240088226
- Publication date Mar 14, 2024
- Pakal Technologies, Inc.
- Hidenori Akiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL INSULATED GATE POWER SWITCH WITH ISOLATED BASE CONTACT REG...
- Publication number 20230032610
- Publication date Feb 2, 2023
- PAKAL TECHNOLOGIES, LLC
- Paul M Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NPNP LAYERED MOS-GATED TRENCH DEVICE HAVING LOWERED OPERATING VOLTAGE
- Publication number 20220376095
- Publication date Nov 24, 2022
- PAKAL TECHNOLOGIES, LLC
- Paul M Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANTI-PARALLEL DIODE FORMED USING DAMAGED CRYSTAL STRUCTURE IN A VER...
- Publication number 20220344493
- Publication date Oct 27, 2022
- Pakal Technologies, Inc.
- Paul M. Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETCH STOP LAYER FOR INJECTING CARRIERS INTO DRIFT LAYER FOR A VERTI...
- Publication number 20220344498
- Publication date Oct 27, 2022
- Pakal Technologies, Inc.
- Paul M. Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS-GATED TRENCH DEVICE USING LOW MASK COUNT AND SIMPLIFIED PROCESSING
- Publication number 20220238698
- Publication date Jul 28, 2022
- Pakal Technologies, Inc.
- Paul M Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED TRENCH GATES WITH MULTIPLE LAYERS FOR IMPROVED PERFORMANC...
- Publication number 20220045189
- Publication date Feb 10, 2022
- Pakal Technologies, Inc.
- Paul M. Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH GATE POWER SWITCH WITH DOPED REGIONS TO INDUCE BREAKDOWN AT...
- Publication number 20220045205
- Publication date Feb 10, 2022
- Pakal Technologies, Inc.
- Richard A. Blanchard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED TRENCH GATES WITH DOPANTS IMPLANTED THROUGH GATE OXIDE
- Publication number 20220045168
- Publication date Feb 10, 2022
- Pakal Technologies, Inc.
- Paul M. Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE POWER DEVICE WITH INDEPENDENTLY CONTROLLED SEGMENTS
- Publication number 20220045674
- Publication date Feb 10, 2022
- Pakal Technologies, Inc.
- Paul M. Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE TURN-OFF DEVICE WITH DESIGNATED BREAKDOWN AREAS BETW...
- Publication number 20200312988
- Publication date Oct 1, 2020
- Pakal Technologies, Inc.
- Paul M. Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DMOS TRANSISTOR WITH TRENCH SCHOTTKY DIODE
- Publication number 20170133502
- Publication date May 11, 2017
- Micrel, Inc.
- Jayasimha Swamy Prasad
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
DMOS TRANSISTOR WITH TRENCH SCHOTTKY DIODE
- Publication number 20160260831
- Publication date Sep 8, 2016
- MICREL, INC.
- Jayasimha Swamy Prasad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS TRANSISTOR WITH ASYMMETRIC SPACER AS GATE
- Publication number 20130316508
- Publication date Nov 28, 2013
- MICREL, INC.
- Martin Alter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS transistor with asymmetric spacer as gate
- Publication number 20110115017
- Publication date May 19, 2011
- Martin Alter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral DMOS Field Effect Transistor with Reduced Threshold Voltage...
- Publication number 20110024839
- Publication date Feb 3, 2011
- MICREL, INC.
- David R. Zinn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING NON-VOLATILE MEMORY CELLS
- Publication number 20080108192
- Publication date May 8, 2008
- MICREL, INC.
- Paul M. MOORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Single Poly BiCMOS Flash Cell With Floating Body
- Publication number 20070235816
- Publication date Oct 11, 2007
- Micrel, Incorporated
- Paul M. Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-volatile memory cells and methods for fabricating the same
- Publication number 20070187755
- Publication date Aug 16, 2007
- Paul M. Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Zero cost non-volatile memory cell with write and erase features
- Publication number 20060008980
- Publication date Jan 12, 2006
- Paul M. Moore
- G11 - INFORMATION STORAGE
Information Patent Application
Zero-cost non-volatile memory cell with write and erase features
- Publication number 20040084705
- Publication date May 6, 2004
- Paul M. Moore
- G11 - INFORMATION STORAGE

Paul M. Moore

Person

Patents Grantslast 30 patents

Insulated trench gates with multiple layers for improved performanc...

Etch stop layer for injecting carriers into drift layer for a verti...

Insulated trench gates with dopants implanted through gate oxide

Anti-parallel diode formed using damaged crystal structure in a ver...

NPNP layered MOS-gated trench device having lowered operating voltage

Insulated gate power device with independently controlled segments

Insulated gate turn-off device with designated breakdown areas betw...

DMOS transistor with trench schottky diode

DMOS transistor with trench schottky diode

LDMOS transistor with asymmetric spacer as gate

Split slot FET with embedded drain

LDMOS transistor with asymmetric spacer as gate

Lateral DMOS field effect transistor with reduced threshold voltage...

Method for fabricating non-volatile memory cells

Zero cost non-volatile memory cell with write and erase features

Single poly BiCMOS flash cell with floating body

Non-volatile memory cells

Zero-cost non-volatile memory cell with write and erase features

Patents Applicationslast 30 patents

INSULATED GATE TURN-OFF DEVICE WITH SHORT CHANNEL PMOS TRANSISTOR

VERTICAL INSULATED GATE POWER SWITCH WITH ISOLATED BASE CONTACT REG...

NPNP LAYERED MOS-GATED TRENCH DEVICE HAVING LOWERED OPERATING VOLTAGE

ANTI-PARALLEL DIODE FORMED USING DAMAGED CRYSTAL STRUCTURE IN A VER...

ETCH STOP LAYER FOR INJECTING CARRIERS INTO DRIFT LAYER FOR A VERTI...

MOS-GATED TRENCH DEVICE USING LOW MASK COUNT AND SIMPLIFIED PROCESSING

INSULATED TRENCH GATES WITH MULTIPLE LAYERS FOR IMPROVED PERFORMANC...

TRENCH GATE POWER SWITCH WITH DOPED REGIONS TO INDUCE BREAKDOWN AT...

INSULATED TRENCH GATES WITH DOPANTS IMPLANTED THROUGH GATE OXIDE

INSULATED GATE POWER DEVICE WITH INDEPENDENTLY CONTROLLED SEGMENTS

INSULATED GATE TURN-OFF DEVICE WITH DESIGNATED BREAKDOWN AREAS BETW...

DMOS TRANSISTOR WITH TRENCH SCHOTTKY DIODE

DMOS TRANSISTOR WITH TRENCH SCHOTTKY DIODE

LDMOS TRANSISTOR WITH ASYMMETRIC SPACER AS GATE

LDMOS transistor with asymmetric spacer as gate

Lateral DMOS Field Effect Transistor with Reduced Threshold Voltage...

METHOD FOR FABRICATING NON-VOLATILE MEMORY CELLS

Single Poly BiCMOS Flash Cell With Floating Body

Non-volatile memory cells and methods for fabricating the same

Zero cost non-volatile memory cell with write and erase features

Zero-cost non-volatile memory cell with write and erase features