Pavel Ionov

Person

Glendale, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
In situ application of etch back for improved deposition into high-...
- Patent number 7,399,707
- Issue date Jul 15, 2008
- Applied Materials, Inc.
- Padmanabhan Krishnaraj
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
In situ application of etch back for improved deposition into high-...
- Patent number 6,869,880
- Issue date Mar 22, 2005
- Applied Materials, Inc.
- Padmanabhan Krishnaraj
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Chamber cleaning with fluorides of iodine
- Patent number 6,581,612
- Issue date Jun 24, 2003
- Applied Materials Inc.
- Peter Loewenhardt
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for etching silicon oxynitride and dielectric antireflection...
- Patent number 6,537,918
- Issue date Mar 25, 2003
- Applied Materials Inc.
- Pavel Ionov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of etching dielectric layers using a removable hardmask
- Patent number 6,458,516
- Issue date Oct 1, 2002
- Applied Materials Inc.
- Yan Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of pattern etching a low K dielectric layer
- Patent number 6,331,380
- Issue date Dec 18, 2001
- Applied Materials, Inc.
- Yan Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for etching silicon oxynitride and dielectric antireflection...
- Patent number 6,291,356
- Issue date Sep 18, 2001
- Applied Materials, Inc.
- Pavel Ionov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of etching patterned layers useful as masking during subsequ...
- Patent number 6,080,529
- Issue date Jun 27, 2000
- Applied Materials, Inc.
- Yan Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for etching silicon oxynitride and inorganic antireflection...
- Patent number 6,013,582
- Issue date Jan 11, 2000
- Applied Materials, Inc.
- Pavel Ionov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hydrocarbon gases for anisotropic etching of metal-containing layers
- Patent number 6,010,966
- Issue date Jan 4, 2000
- Applied Materials, Inc.
- Pavel Ionov
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
In situ application of etch back for improved deposition into high-...
- Publication number 20050124166
- Publication date Jun 9, 2005
- Applied Materials, Inc.
- Padmanabhan Krishnaraj
- C30 - CRYSTAL GROWTH
Information Patent Application
In situ application of etch back for improved deposition into high-...
- Publication number 20030136332
- Publication date Jul 24, 2003
- APPLIED MATERIALS INC., a Delaware corporation
- Padmanabhan Krishnaraj
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for etching silicon oxynitride and dielectric antireflection...
- Publication number 20020016078
- Publication date Feb 7, 2002
- Pavel Ionov
- H01 - BASIC ELECTRIC ELEMENTS

Pavel Ionov

Person

Patents Grantslast 30 patents

In situ application of etch back for improved deposition into high-...

In situ application of etch back for improved deposition into high-...

Chamber cleaning with fluorides of iodine

Method for etching silicon oxynitride and dielectric antireflection...

Method of etching dielectric layers using a removable hardmask

Method of pattern etching a low K dielectric layer

Method for etching silicon oxynitride and dielectric antireflection...

Method of etching patterned layers useful as masking during subsequ...

Method for etching silicon oxynitride and inorganic antireflection...

Hydrocarbon gases for anisotropic etching of metal-containing layers

Patents Applicationslast 30 patents

In situ application of etch back for improved deposition into high-...

In situ application of etch back for improved deposition into high-...

Method for etching silicon oxynitride and dielectric antireflection...