Perry Merrill

Person

El Segundo, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
IGBT with reduced forward voltage drop and reduced switching loss
- Patent number 6,198,115
- Issue date Mar 6, 2001
- International Rectifier Corp.
- Richard Francis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT with reduced forward voltage drop and reduced switching loss
- Patent number 6,043,112
- Issue date Mar 28, 2000
- International Rectifier Corp.
- Richard Francis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power transistor device having ultra deep increased concentration r...
- Patent number 5,904,510
- Issue date May 18, 1999
- International Rectifier Corp.
- Perry Merrill
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage power schottky with aluminum barrier metal spaced from...
- Patent number 5,859,465
- Issue date Jan 12, 1999
- International Rectifier Corporation
- Kyle A. Spring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radhard mosfet with thick gate oxide and deep channel region
- Patent number 5,831,318
- Issue date Nov 3, 1998
- International Rectifier Corporation
- Kyle A. Spring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power transistor device having ultra deep increased concentration
- Patent number 5,661,314
- Issue date Aug 26, 1997
- International Rectifier Corporation
- Perry Merrill
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Amorphous silicon layer for top surface of semiconductor device
- Patent number 5,654,206
- Issue date Aug 5, 1997
- International Rectifier Corporation
- Perry Merrill
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate resistor for IGBT
- Patent number 5,592,006
- Issue date Jan 7, 1997
- International Rectifier Corporation
- Perry Merrill
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Amorphous silicon layer for top surface of semiconductor device
- Patent number 5,523,604
- Issue date Jun 4, 1996
- International Rectifier Corporation
- Perry Merrill
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for manufacture of radiation resistant power MOSFET and rad...
- Patent number 5,475,252
- Issue date Dec 12, 1995
- International Rectifier Corporation
- Perry Merrill
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for manufacture of radiation resistant power MOSFET and rad...
- Patent number 5,338,693
- Issue date Aug 16, 1994
- International Rectifier Corporation
- Daniel M. Kinzer
- H01 - BASIC ELECTRIC ELEMENTS

Perry Merrill

Person

Patents Grantslast 30 patents

IGBT with reduced forward voltage drop and reduced switching loss

IGBT with reduced forward voltage drop and reduced switching loss

Power transistor device having ultra deep increased concentration r...

High voltage power schottky with aluminum barrier metal spaced from...

Radhard mosfet with thick gate oxide and deep channel region

Power transistor device having ultra deep increased concentration

Amorphous silicon layer for top surface of semiconductor device

Gate resistor for IGBT

Amorphous silicon layer for top surface of semiconductor device

Process for manufacture of radiation resistant power MOSFET and rad...

Process for manufacture of radiation resistant power MOSFET and rad...