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W.R. Dawes, Jr. et al. "Transient Hardened Power FETS", presented at the Nuclear Space and Radiation Effets Conference, sponsored by IEEE, Jul. 20-24, 1986, pp. 1-7. |
G.B. Roper et al. "Development of a Radiation Hard N-Channel Power MOSFET," IEEE Transactions on Nuclear Science, vol. NS-30, No. 6, (Dec. 1983) pp. 4110-4115. |
A. Bindra, "Rad-Hard Power MOSFETs", Electronic Engineering Letters, (Jan. 1987). |
"Unveils Rad-Hard MOSFETs", Electronic Buyers' News, Jan. 12, 1987, p. 12. |
D. Tunick, "Failure Mechanisms Probed for Rad-Hard Power MOSFETs", Electronic Design (Nov. 1986). |
J.L. Titus, et al., "Impact of Oxide Thickness on SEGR Failure in Vertical Power MOSFETs: Development of a Semi-Empirical Expression", submitted for publication in IEEE Trans. on Nucl. Sci. (1995). |
B. Jayant Baliga, "Modern Power Devices", John Wiley & Sons, 1987, pp. 29, 314-315. |