Peter B. Gray

Person

Essex Junction, VT, US

People

Patents Grantslast 30 patents

Information Patent Grant
Compact device structures for a bipolar junction transistor
- Patent number 10,367,083
- Issue date Jul 30, 2019
- GLOBALFOUNDRIES Inc.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation scheme for bipolar transistors in BiCMOS technology
- Patent number 9,318,584
- Issue date Apr 19, 2016
- GLOBALFOUNDRIES Inc.
- Peng Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistors with self-aligned terminals
- Patent number 9,231,087
- Issue date Jan 5, 2016
- GLOBALFOUNDRIES Inc.
- John J. Benoit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistors with self-aligned terminals
- Patent number 9,059,196
- Issue date Jun 16, 2015
- International Business Machines Corporation
- John J. Benoit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation scheme for bipolar transistors in BiCMOS technology
- Patent number 8,921,195
- Issue date Dec 30, 2014
- International Business Machines Corporation
- Peng Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar device having a monocrystalline semiconductor intrinsic bas...
- Patent number 8,810,005
- Issue date Aug 19, 2014
- International Business Machines Corporation
- Renata A. Camillo-Castillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistors with a link region connecting the intr...
- Patent number 8,716,837
- Issue date May 6, 2014
- International Business Machines Corporation
- Renata Camillo-Castillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistor with a self-aligned emitter and base
- Patent number 8,710,500
- Issue date Apr 29, 2014
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistors with a link region connecting the intr...
- Patent number 8,536,012
- Issue date Sep 17, 2013
- International Business Machines Corporation
- Renata Camillo-Castillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistors with reduced base resistance
- Patent number 8,513,706
- Issue date Aug 20, 2013
- International Business Machines Corporation
- Erik M. Dahlstrom
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating a bipolar junction transistor with a self-al...
- Patent number 8,492,237
- Issue date Jul 23, 2013
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor structure and method including emitter-base inte...
- Patent number 8,482,101
- Issue date Jul 9, 2013
- International Business Machines Corporation
- John J. Benoit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structure with a sidewall-defined intrinsic base to extr...
- Patent number 8,405,186
- Issue date Mar 26, 2013
- International Business Machines Corporation
- Renata Camillo-Castillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistors with reduced base resistance
- Patent number 8,389,372
- Issue date Mar 5, 2013
- International Business Machines Corporation
- Erik M. Dahlstrom
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical PNP transistor and method of making same
- Patent number 7,972,919
- Issue date Jul 5, 2011
- International Business Machines Corporation
- Peter B. Gray
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
BiCMOS devices with a self-aligned emitter and methods of fabricati...
- Patent number 7,709,338
- Issue date May 4, 2010
- International Business Machines Corporation
- Qizhi Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of collector formation in BiCMOS technology
- Patent number 7,491,985
- Issue date Feb 17, 2009
- International Business Machines Corporation
- Peter J. Geiss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High performance vertical PNP transistor method
- Patent number 7,265,010
- Issue date Sep 4, 2007
- International Business Machines Corporation
- Peter B. Gray
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High performance integrated vertical transistors and method of maki...
- Patent number 7,217,628
- Issue date May 15, 2007
- International Business Machines Corporation
- David C. Sheridan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Passivation for improved bipolar yield
- Patent number 7,214,593
- Issue date May 8, 2007
- International Business Machines Corporation
- Douglas Duane Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of collector formation in BiCMOS technology
- Patent number 7,002,190
- Issue date Feb 21, 2006
- International Business Machines Corporation
- Peter J. Geiss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High performance vertical PNP transistor and method
- Patent number 6,909,164
- Issue date Jun 21, 2005
- International Business Machines Corporation
- Peter B. Gray
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating lateral diodes and bipolar transistors
- Patent number 6,670,255
- Issue date Dec 30, 2003
- International Business Machines Corporation
- James W. Adkisson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of contacting a silicide-based schottky diode and diode so f...
- Patent number 6,597,050
- Issue date Jul 22, 2003
- International Business Machines Corporation
- James Stuart Dunn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for epitaxial bipolar BiCMOS
- Patent number 6,448,124
- Issue date Sep 10, 2002
- International Business Machines Corporation
- Douglas D. Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of contacting a silicide-based schottky diode
- Patent number 6,121,122
- Issue date Sep 19, 2000
- International Business Machines Corporation
- James Stuart Dunn
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
COMPACT DEVICE STRUCTURES FOR A BIPOLAR JUNCTION TRANSISTOR
- Publication number 20190181250
- Publication date Jun 13, 2019
- GLOBALFOUNDRIES INC.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPACT DEVICE STRUCTURES FOR A BIPOLAR JUNCTION TRANSISTOR
- Publication number 20170278955
- Publication date Sep 28, 2017
- GLOBALFOUNDRIES INC.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTORS WITH SELF-ALIGNED TERMINALS
- Publication number 20150214344
- Publication date Jul 30, 2015
- International Business Machines Corporation
- John J. Benoit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTORS WITH SELF-ALIGNED TERMINALS
- Publication number 20150123245
- Publication date May 7, 2015
- International Business Machines Corporation
- John J. Benoit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION SCHEME FOR BIPOLAR TRANSISTORS IN BICMOS TECHNOLOGY
- Publication number 20150041956
- Publication date Feb 12, 2015
- International Business Machines Corporation
- Peng Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR DEVICE HAVING A MONOCRYSTALLINE SEMICONDUCTOR INTRINSIC BAS...
- Publication number 20140246676
- Publication date Sep 4, 2014
- International Business Machines Corporation
- Renata A. Camillo-Castillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION SCHEME FOR BIPOLAR TRANSISTORS IN BICMOS TECHNOLOGY
- Publication number 20140117493
- Publication date May 1, 2014
- International Business Machines Corporation
- Peng Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTORS WITH A LINK REGION CONNECTING THE INTR...
- Publication number 20130147017
- Publication date Jun 13, 2013
- International Business Machines Corporation
- Renata Camillo-Castillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTOR WITH A SELF-ALIGNED EMITTER AND BASE
- Publication number 20130140566
- Publication date Jun 6, 2013
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTORS WITH REDUCED BASE RESISTANCE
- Publication number 20130062668
- Publication date Mar 14, 2013
- International Business Machines Corporation
- Erik M. Dahlstrom
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTORS WITH A LINK REGION CONNECTING THE INTR...
- Publication number 20130009280
- Publication date Jan 10, 2013
- International Business Machines Corporation
- Renata Camillo-Castillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTOR WITH A SELF-ALIGNED EMITTER AND BASE
- Publication number 20120228611
- Publication date Sep 13, 2012
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTORS WITH REDUCED BASE RESISTANCE
- Publication number 20120126292
- Publication date May 24, 2012
- International Business Machines Corporation
- Erik M. Dahlstrom
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURE WITH A SIDEWALL-DEFINED INTRINSIC BASE TO EXTR...
- Publication number 20110309471
- Publication date Dec 22, 2011
- International Business Machines Corporation
- Renata Camillo-Castillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR STRUCTURE AND METHOD INCLUDING EMITTER-BASE INTE...
- Publication number 20100320571
- Publication date Dec 23, 2010
- International Business Machines Corporation
- John J. Benoit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BICMOS DEVICES WITH A SELF-ALIGNED EMITTER AND METHODS OF FABRICATI...
- Publication number 20090020851
- Publication date Jan 22, 2009
- INTERNATIONAL BUSINESS MACHINES CORPORATION ("IBM")
- Qizhi Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL PNP TRANSISTOR AND METHOD OF MAKING SAME
- Publication number 20070013031
- Publication date Jan 18, 2007
- International Business Machines Corporation
- Peter B. Gray
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High performance integrated vertical transistors and method of maki...
- Publication number 20070001264
- Publication date Jan 4, 2007
- International Business Machines Corporation
- David C. Sheridan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH PERFORMANCE INTEGRATED VERTICAL TRANSISTORS AND METHOD OF MAKI...
- Publication number 20060157823
- Publication date Jul 20, 2006
- International Business Machines Corporation
- David C. Sheridan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of collector formation in BiCMOS technology
- Publication number 20060124964
- Publication date Jun 15, 2006
- International Business Machines Corporation
- Peter J. Geiss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High performance vertical PNP transistor method
- Publication number 20040248352
- Publication date Dec 9, 2004
- Peter B. Gray
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High performance vertical PNP transistor and method
- Publication number 20040099895
- Publication date May 27, 2004
- International Business Machines Corporation
- Peter B. Gray
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating lateral diodes and bipolar transistors
- Publication number 20030059985
- Publication date Mar 27, 2003
- James W. Adkisson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Passivation for improved bipolar yield
- Publication number 20020102787
- Publication date Aug 1, 2002
- International Business Machines Corporation
- Douglas Duane Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR EPITAXIAL BIPOLAR BICMOS
- Publication number 20020076874
- Publication date Jun 20, 2002
- DOUGLAS D. COOLBAUGH
- H01 - BASIC ELECTRIC ELEMENTS

Peter B. Gray

Person

Patents Grantslast 30 patents

Compact device structures for a bipolar junction transistor

Isolation scheme for bipolar transistors in BiCMOS technology

Bipolar junction transistors with self-aligned terminals

Bipolar junction transistors with self-aligned terminals

Isolation scheme for bipolar transistors in BiCMOS technology

Bipolar device having a monocrystalline semiconductor intrinsic bas...

Bipolar junction transistors with a link region connecting the intr...

Bipolar junction transistor with a self-aligned emitter and base

Bipolar junction transistors with a link region connecting the intr...

Heterojunction bipolar transistors with reduced base resistance

Methods of fabricating a bipolar junction transistor with a self-al...

Bipolar transistor structure and method including emitter-base inte...

Transistor structure with a sidewall-defined intrinsic base to extr...

Heterojunction bipolar transistors with reduced base resistance

Vertical PNP transistor and method of making same

BiCMOS devices with a self-aligned emitter and methods of fabricati...

Method of collector formation in BiCMOS technology

High performance vertical PNP transistor method

High performance integrated vertical transistors and method of maki...

Passivation for improved bipolar yield

Method of collector formation in BiCMOS technology

High performance vertical PNP transistor and method

Method of fabricating lateral diodes and bipolar transistors

Method of contacting a silicide-based schottky diode and diode so f...

Method for epitaxial bipolar BiCMOS

Method of contacting a silicide-based schottky diode

Patents Applicationslast 30 patents

COMPACT DEVICE STRUCTURES FOR A BIPOLAR JUNCTION TRANSISTOR

COMPACT DEVICE STRUCTURES FOR A BIPOLAR JUNCTION TRANSISTOR

BIPOLAR JUNCTION TRANSISTORS WITH SELF-ALIGNED TERMINALS

BIPOLAR JUNCTION TRANSISTORS WITH SELF-ALIGNED TERMINALS

ISOLATION SCHEME FOR BIPOLAR TRANSISTORS IN BICMOS TECHNOLOGY

BIPOLAR DEVICE HAVING A MONOCRYSTALLINE SEMICONDUCTOR INTRINSIC BAS...

ISOLATION SCHEME FOR BIPOLAR TRANSISTORS IN BICMOS TECHNOLOGY

BIPOLAR JUNCTION TRANSISTORS WITH A LINK REGION CONNECTING THE INTR...

BIPOLAR JUNCTION TRANSISTOR WITH A SELF-ALIGNED EMITTER AND BASE

HETEROJUNCTION BIPOLAR TRANSISTORS WITH REDUCED BASE RESISTANCE

BIPOLAR JUNCTION TRANSISTORS WITH A LINK REGION CONNECTING THE INTR...

BIPOLAR JUNCTION TRANSISTOR WITH A SELF-ALIGNED EMITTER AND BASE

HETEROJUNCTION BIPOLAR TRANSISTORS WITH REDUCED BASE RESISTANCE

TRANSISTOR STRUCTURE WITH A SIDEWALL-DEFINED INTRINSIC BASE TO EXTR...

BIPOLAR TRANSISTOR STRUCTURE AND METHOD INCLUDING EMITTER-BASE INTE...

BICMOS DEVICES WITH A SELF-ALIGNED EMITTER AND METHODS OF FABRICATI...

VERTICAL PNP TRANSISTOR AND METHOD OF MAKING SAME

High performance integrated vertical transistors and method of maki...

HIGH PERFORMANCE INTEGRATED VERTICAL TRANSISTORS AND METHOD OF MAKI...

Method of collector formation in BiCMOS technology

High performance vertical PNP transistor method

High performance vertical PNP transistor and method

Method of fabricating lateral diodes and bipolar transistors

Passivation for improved bipolar yield

METHOD FOR EPITAXIAL BIPOLAR BICMOS