Peter Keswick

Person

Bloomington, MN, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method of forming borderless contacts
- Patent number 7,901,976
- Issue date Mar 8, 2011
- Cypress Semiconductor Corporation
- Sriram Viswanathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate etch process
- Patent number 7,112,834
- Issue date Sep 26, 2006
- Cypress Semiconductor Corporation
- Benjamin Schwarz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate etch process
- Patent number 6,699,795
- Issue date Mar 2, 2004
- Cypress Semiconductor Corp.
- Benjamin Schwarz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma reactor using inductive RF coupling, and processes
- Patent number 6,545,420
- Issue date Apr 8, 2003
- Applied Materials, Inc.
- Kenneth S. Collins
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Plasma reactor using inductive RF coupling, and processes
- Patent number 6,518,195
- Issue date Feb 11, 2003
- Applied Materials, Inc.
- Kenneth S. Collins
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Magnetic confinement in a plasma reactor having an RF bias electrode
- Patent number 6,488,807
- Issue date Dec 3, 2002
- Applied Materials, Inc.
- Kenneth S. Collins
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for processing substrates using gaseous silicon scavenger
- Patent number 6,444,137
- Issue date Sep 3, 2002
- Applied Materials, Inc.
- Kenneth S. Collins
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Plasma reactor with heated source of a polymer-hardening precursor...
- Patent number 6,440,866
- Issue date Aug 27, 2002
- Applied Materials, Inc.
- Kenneth S. Collins
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
High temperature silicon surface providing high selectivity in an o...
- Patent number 6,399,514
- Issue date Jun 4, 2002
- Applied Materials, Inc.
- Jeffrey Marks
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Plasma etch processes
- Patent number 6,251,792
- Issue date Jun 26, 2001
- Applied Materials, Inc.
- Kenneth S. Collins
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Plasma reactor with heated source of a polymer-hardening precursor...
- Patent number 6,218,312
- Issue date Apr 17, 2001
- Applied Materials Inc.
- Kenneth S. Collins
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Oxide etch process with high selectivity to nitride suitable for us...
- Patent number 6,194,325
- Issue date Feb 27, 2001
- Applied Materials Inc.
- Chan Lon Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High selectivity oxide etch process for integrated circuit structures
- Patent number 6,171,974
- Issue date Jan 9, 2001
- Applied Materials, Inc.
- Jeffrey Marks
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Process used in an RF coupled plasma reactor
- Patent number 6,068,784
- Issue date May 30, 2000
- Applied Materials, Inc.
- Kenneth S. Collins
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Plasma reactor with heated source of a polymer-hardening precursor...
- Patent number 6,036,877
- Issue date Mar 14, 2000
- Applied Materials, Inc.
- Kenneth S. Collins
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Plasma reactor with heated source of a polymer-hardening precursor...
- Patent number 6,024,826
- Issue date Feb 15, 2000
- Applied Materials, Inc.
- Kenneth Collins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma reactor with heated source of a polymer-hardening precursor...
- Patent number 5,990,017
- Issue date Nov 23, 1999
- Applied Materials, Inc.
- Kenneth Collins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma reactor and processes using RF inductive coupling and scaven...
- Patent number 5,888,414
- Issue date Mar 30, 1999
- Applied Materials, Inc.
- Kenneth S. Collins
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon scavenger in an inductively coupled RF plasma reactor
- Patent number 5,556,501
- Issue date Sep 17, 1996
- Applied Materials, Inc.
- Kenneth S. Collins
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Selectivity for etching an oxide over a nitride
- Patent number 5,423,945
- Issue date Jun 13, 1995
- Applied Materials, Inc.
- Jeffrey Marks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etching titanium nitride using carbon-fluoride and carbon-oxide gas
- Patent number 5,399,237
- Issue date Mar 21, 1995
- Applied Materials, Inc.
- Peter Keswick
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reactor chamber self-cleaning process
- Patent number 5,158,644
- Issue date Oct 27, 1992
- Applied Materials, Inc.
- David Cheung
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
PROCESSES USED IN AN INDUCTIVELY COUPLED PLASMA REACTOR
- Publication number 20020004309
- Publication date Jan 10, 2002
- KENNETH S. COLLINS
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Peter Keswick

Person

Patents Grantslast 30 patents

Method of forming borderless contacts

Gate etch process

Gate etch process

Plasma reactor using inductive RF coupling, and processes

Plasma reactor using inductive RF coupling, and processes

Magnetic confinement in a plasma reactor having an RF bias electrode

Method for processing substrates using gaseous silicon scavenger

Plasma reactor with heated source of a polymer-hardening precursor...

High temperature silicon surface providing high selectivity in an o...

Plasma etch processes

Plasma reactor with heated source of a polymer-hardening precursor...

Oxide etch process with high selectivity to nitride suitable for us...

High selectivity oxide etch process for integrated circuit structures

Process used in an RF coupled plasma reactor

Plasma reactor with heated source of a polymer-hardening precursor...

Plasma reactor with heated source of a polymer-hardening precursor...

Plasma reactor with heated source of a polymer-hardening precursor...

Plasma reactor and processes using RF inductive coupling and scaven...

Silicon scavenger in an inductively coupled RF plasma reactor

Selectivity for etching an oxide over a nitride

Etching titanium nitride using carbon-fluoride and carbon-oxide gas

Reactor chamber self-cleaning process

Patents Applicationslast 30 patents

PROCESSES USED IN AN INDUCTIVELY COUPLED PLASMA REACTOR