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Peter L. Pegler
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Mesa, AZ, US
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last 30 patents
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Patent Grant
Method and structure for double dose gate in a JFET
Patent number
6,995,052
Issue date
Feb 7, 2006
Lovoltech, Inc.
Ho-Yuan Yu
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for a junction field effect transistor with reduced gate cap...
Patent number
6,812,079
Issue date
Nov 2, 2004
Lovoltech, Inc.
Pete L. Pegler
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method and structure for double dose gate in a JFET
Patent number
6,777,722
Issue date
Aug 17, 2004
Lovoltech, Inc.
Ho-Yuan Yu
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Structure and method for a junction field effect transistor with re...
Patent number
6,696,706
Issue date
Feb 24, 2004
Lovoltech, Inc.
Pete L. Pegler
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of making a structure for top surface gettering of metallic...
Patent number
5,556,793
Issue date
Sep 17, 1996
Motorola, Inc.
Steven J. Adler
H01 - BASIC ELECTRIC ELEMENTS