Peter West

Person

Minneapolis, MN, US

People

Patents Grantslast 30 patents

Information Patent Grant
Transistor with single termination trench having depth more than 10...
- Patent number 12,015,079
- Issue date Jun 18, 2024
- Polar Semiconductor, LLC
- Noel Hoilien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench semiconductor device layout configurations
- Patent number 11,245,006
- Issue date Feb 8, 2022
- Polar Semiconductor, LLC
- Dosi Dosev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage MOSFET structures
- Patent number 10,896,885
- Issue date Jan 19, 2021
- Polar Semiconductor, LLC
- Peter West
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench semiconductor device layout configurations
- Patent number 10,580,861
- Issue date Mar 3, 2020
- Polar Semiconductor, LLC
- Dosi Dosev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage tolerant bonding pad structure for trench-based semico...
- Patent number 9,899,343
- Issue date Feb 20, 2018
- Polar Semiconductor, LLC
- Peter West
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Termination trench structures for high-voltage split-gate MOS devices
- Patent number 9,818,828
- Issue date Nov 14, 2017
- Polar Semiconductor, LLC
- Peter West
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for defining a semiconductor device layout
- Patent number 6,804,809
- Issue date Oct 12, 2004
- PolarFab, LLC
- Peter West
- G06 - COMPUTING CALCULATING COUNTING

Patents Applicationslast 30 patents

Information Patent Application
TRANSISTOR WITH SINGLE TERMINATION TRENCH HAVING DEPTH MORE THAN 10...
- Publication number 20230065066
- Publication date Mar 2, 2023
- Polar Semiconductor, LLC
- Noel Hoilien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH SEMICONDUCTOR DEVICE LAYOUT CONFIGURATIONS
- Publication number 20200127092
- Publication date Apr 23, 2020
- Polar Semiconductor, LLC
- Dosi Dosev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-VOLTAGE MOSFET STRUCTURES
- Publication number 20190081016
- Publication date Mar 14, 2019
- Polar Semiconductor, LLC
- Peter West
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET WITH VERTICAL VARIATION OF GATE-PILLAR SEPARATION
- Publication number 20190081147
- Publication date Mar 14, 2019
- Polar Semiconductor, LLC
- Peter West
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH SEMICONDUCTOR DEVICE LAYOUT CONFIGURATIONS
- Publication number 20180175146
- Publication date Jun 21, 2018
- Polar Semiconductor, LLC
- Dosi Dosev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE TOLERANT BONDING PAD STRUCTURE FOR TRENCH-BASED SEMICO...
- Publication number 20170263580
- Publication date Sep 14, 2017
- Polar Semiconductor, LLC
- Peter West
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TERMINATION TRENCH STRUCTURES FOR HIGH-VOLTAGE SPLIT-GATE MOS DEVICES
- Publication number 20170263718
- Publication date Sep 14, 2017
- Polar Semiconductor, LLC
- Peter West
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT-GATE SUPERJUNCTION POWER TRANSISTOR
- Publication number 20170194485
- Publication date Jul 6, 2017
- Polar Semiconductor, LLC
- Christopher Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH SEMICONDUCTOR DEVICE LAYOUT CONFIGURATIONS
- Publication number 20160247879
- Publication date Aug 25, 2016
- Polar Semiconductor, LLC
- Dosi Dosev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR VISUALLY DETERMINING ETCH DEPTH
- Publication number 20110037069
- Publication date Feb 17, 2011
- Polar Semiconductor, Inc.
- Peter West
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Transistor with single termination trench having depth more than 10...

Trench semiconductor device layout configurations

High-voltage MOSFET structures

Trench semiconductor device layout configurations

High voltage tolerant bonding pad structure for trench-based semico...

Termination trench structures for high-voltage split-gate MOS devices

System and method for defining a semiconductor device layout

Patents Applicationslast 30 patents

TRANSISTOR WITH SINGLE TERMINATION TRENCH HAVING DEPTH MORE THAN 10...

TRENCH SEMICONDUCTOR DEVICE LAYOUT CONFIGURATIONS

HIGH-VOLTAGE MOSFET STRUCTURES

MOSFET WITH VERTICAL VARIATION OF GATE-PILLAR SEPARATION

TRENCH SEMICONDUCTOR DEVICE LAYOUT CONFIGURATIONS

HIGH VOLTAGE TOLERANT BONDING PAD STRUCTURE FOR TRENCH-BASED SEMICO...

TERMINATION TRENCH STRUCTURES FOR HIGH-VOLTAGE SPLIT-GATE MOS DEVICES

SPLIT-GATE SUPERJUNCTION POWER TRANSISTOR

TRENCH SEMICONDUCTOR DEVICE LAYOUT CONFIGURATIONS

METHOD AND APPARATUS FOR VISUALLY DETERMINING ETCH DEPTH