Philip Christoph Brandt

Person

Oberhaching, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Diode structure of a power semiconductor device
- Patent number 11,848,354
- Issue date Dec 19, 2023
- Infineon Technologies AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a semiconductor channel region and a se...
- Patent number 11,721,689
- Issue date Aug 8, 2023
- Infineon Technologies AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having overload current carrying capability
- Patent number 11,410,989
- Issue date Aug 9, 2022
- Infineon Technologies AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device and method of processing a power semicon...
- Patent number 11,251,266
- Issue date Feb 15, 2022
- Infineon Technologies AG
- Philip Christoph Brandt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode structure of a power semiconductor device
- Patent number 11,133,380
- Issue date Sep 28, 2021
- Infineon Technologies AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having an edge termination region comprising a...
- Patent number 11,094,779
- Issue date Aug 17, 2021
- Infineon Technologies AG
- Philip Christoph Brandt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device
- Patent number 10,998,399
- Issue date May 4, 2021
- Infineon Technologies AG
- Alice Pei-Shan Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having overload current carrying capability
- Patent number 10,651,165
- Issue date May 12, 2020
- Infineon Technologies AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage termination structure of a power semiconductor device
- Patent number 10,636,900
- Issue date Apr 28, 2020
- Infineon Technologies Austria AG
- Viktoryia Uhnevionak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a source region with chalcogen atoms
- Patent number 10,475,911
- Issue date Nov 12, 2019
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode structure of a power semiconductor device
- Patent number 10,340,337
- Issue date Jul 2, 2019
- Infineon Technologies AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a semiconductor device with implanted chalcogen...
- Patent number 10,205,011
- Issue date Feb 12, 2019
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a transistor, method of patterning a substrate, a...
- Patent number 9,954,068
- Issue date Apr 24, 2018
- Infineon Technologies AG
- Philip Christoph Brandt
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Power Semiconductor Device and Method of Producing a Power Semicond...
- Publication number 20240213343
- Publication date Jun 27, 2024
- INFINEON TECHNOLOGIES AG
- Roland Dietmüller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A SEMICONDUCTOR CHANNEL REGION AND A SE...
- Publication number 20220367443
- Publication date Nov 17, 2022
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Diode Structure of a Power Semiconductor Device
- Publication number 20210376069
- Publication date Dec 2, 2021
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device and Method of Processing a Power Semicon...
- Publication number 20200266269
- Publication date Aug 20, 2020
- Philip Christoph Brandt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having Overload Current Carrying Capability
- Publication number 20200243509
- Publication date Jul 30, 2020
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device
- Publication number 20200013854
- Publication date Jan 9, 2020
- INFINEON TECHNOLOGIES AG
- Alice Pei-Shan Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Diode Structure of a Power Semiconductor Device
- Publication number 20190319092
- Publication date Oct 17, 2019
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having a Source Region with Chalcogen Atoms
- Publication number 20190157438
- Publication date May 23, 2019
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Voltage Termination Structure of a Power Semiconductor Device
- Publication number 20190109230
- Publication date Apr 11, 2019
- Infineon Technologies Austria AG
- Viktoryia Uhnevionak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Diode Structure of a Power Semiconductor Device
- Publication number 20180083097
- Publication date Mar 22, 2018
- INFINEON TECHNOLOGIES AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Manufacturing Therefor
- Publication number 20170317165
- Publication date Nov 2, 2017
- INFINEON TECHNOLOGIES AG
- Philip Christoph Brandt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Devices and a Method for Forming a Semiconductor Device
- Publication number 20160240642
- Publication date Aug 18, 2016
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having Overload Current Carrying Capability
- Publication number 20160204097
- Publication date Jul 14, 2016
- INFINEON TECHNOLOGIES AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming a Transistor, Method of Patterning a Substrate, a...
- Publication number 20160093706
- Publication date Mar 31, 2016
- INFINEON TECHNOLOGIES AG
- Philip Christoph Brandt
- H01 - BASIC ELECTRIC ELEMENTS

Philip Christoph Brandt

Person

Patents Grantslast 30 patents

Diode structure of a power semiconductor device

Semiconductor device having a semiconductor channel region and a se...

Semiconductor device having overload current carrying capability

Power semiconductor device and method of processing a power semicon...

Diode structure of a power semiconductor device

Semiconductor device having an edge termination region comprising a...

Power semiconductor device

Semiconductor device having overload current carrying capability

High voltage termination structure of a power semiconductor device

Semiconductor device having a source region with chalcogen atoms

Diode structure of a power semiconductor device

Method for forming a semiconductor device with implanted chalcogen...

Method of forming a transistor, method of patterning a substrate, a...

Patents Applicationslast 30 patents

Power Semiconductor Device and Method of Producing a Power Semicond...

SEMICONDUCTOR DEVICE HAVING A SEMICONDUCTOR CHANNEL REGION AND A SE...

Diode Structure of a Power Semiconductor Device

Power Semiconductor Device and Method of Processing a Power Semicon...

Semiconductor Device Having Overload Current Carrying Capability

Power Semiconductor Device

Diode Structure of a Power Semiconductor Device

Semiconductor Device Having a Source Region with Chalcogen Atoms

High Voltage Termination Structure of a Power Semiconductor Device

Diode Structure of a Power Semiconductor Device

Semiconductor Device and Manufacturing Therefor

Semiconductor Devices and a Method for Forming a Semiconductor Device

Semiconductor Device Having Overload Current Carrying Capability

Method of Forming a Transistor, Method of Patterning a Substrate, a...