Philip J. Tobin

Person

Scottsdale, AZ, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method for fabricating dual-metal gate device
- Patent number 8,178,401
- Issue date May 15, 2012
- FREESCALE SEMICONDUCTOR, INC.
- David C. Gilmer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device comprising a gate electrode including a metal-con...
- Patent number 7,868,389
- Issue date Jan 11, 2011
- FREESCALE SEMICONDUCTOR, INC.
- Olubunmi O. Adetutu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making metal gate transistors
- Patent number 7,655,550
- Issue date Feb 2, 2010
- FREESCALE SEMICONDUCTOR, INC.
- James K. Schaeffer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising a transistor having a counter-doped...
- Patent number 7,432,164
- Issue date Oct 7, 2008
- FREESCALE SEMICONDUCTOR, INC.
- Olubunmi O. Adetutu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device comprising a gate electrode including a metal-con...
- Patent number 7,297,588
- Issue date Nov 20, 2007
- FREESCALE SEMICONDUCTOR, INC.
- Olubunmi O. Adetutu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device including dielectric layer, and a process for for...
- Patent number 7,091,568
- Issue date Aug 15, 2006
- FREESCALE SEMICONDUCTOR, INC.
- Rama I. Hegde
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of manufacturing SOI template layer
- Patent number 7,029,980
- Issue date Apr 18, 2006
- Freescale Semiconductor Inc.
- Chun-Li Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a layer using a purging gas in a semiconductor p...
- Patent number 7,015,153
- Issue date Mar 21, 2006
- FREESCALE SEMICONDUCTOR, INC.
- Dina H. Triyoso
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for fabricating dual-metal gate device
- Patent number 6,972,224
- Issue date Dec 6, 2005
- FREESCALE SEMICONDUCTOR, INC.
- David C. Gilmer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capped dual metal gate transistors for CMOS process and method for...
- Patent number 6,894,353
- Issue date May 17, 2005
- FREESCALE SEMICONDUCTOR, INC.
- Srikanth B. Samavedam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective metal oxide removal performed in a reaction chamber in th...
- Patent number 6,818,493
- Issue date Nov 16, 2004
- Motorola, Inc.
- Christopher C. Hobbs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with layered high-K gate dielectric and method therefor
- Patent number 6,717,226
- Issue date Apr 6, 2004
- Motorola, Inc.
- Rama I. Hegde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective removal of a metal oxide dielectric
- Patent number 6,432,779
- Issue date Aug 13, 2002
- Motorola, Inc.
- Christopher Hobbs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and a process for forming the same
- Patent number 6,423,632
- Issue date Jul 23, 2002
- Motorola, Inc.
- Srikanth B. Samavedam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming a structure
- Patent number 6,383,873
- Issue date May 7, 2002
- Motorola, Inc.
- Rama I. Hegde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming a semiconductor device and a conductive structure
- Patent number 6,376,349
- Issue date Apr 23, 2002
- Motorola, Inc.
- Philip J. Tobin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a semiconductor device with an opening in a diel...
- Patent number 6,362,071
- Issue date Mar 26, 2002
- Motorola, Inc.
- Bich-Yen Nguyen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective removal of a metal oxide dielectric
- Patent number 6,300,202
- Issue date Oct 9, 2001
- Motorola Inc.
- Christopher C. Hobbs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming a semiconductor device
- Patent number 6,297,173
- Issue date Oct 2, 2001
- Motorola, Inc.
- Philip J. Tobin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a semiconductor device
- Patent number 6,255,204
- Issue date Jul 3, 2001
- Motorola, Inc.
- Philip J. Tobin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a conductive structure having a composite or amo...
- Patent number 6,136,682
- Issue date Oct 24, 2000
- Motorola Inc.
- Rama I. Hegde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a metal containing layer overlying a ga...
- Patent number 6,084,279
- Issue date Jul 4, 2000
- Motorola Inc.
- Bich-Yen Nguyen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a high dielectric constant gate oxide for...
- Patent number 6,063,698
- Issue date May 16, 2000
- Motorola, Inc.
- Hsing-Huang Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS semiconductor devices and method of formation
- Patent number 6,027,961
- Issue date Feb 22, 2000
- Motorola, Inc.
- Bikas Maiti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming high dielectric constant metal oxides
- Patent number 6,020,024
- Issue date Feb 1, 2000
- Motorola, Inc.
- Bikas Maiti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming a semiconductor device
- Patent number 5,972,804
- Issue date Oct 26, 1999
- Motorola, Inc.
- Philip J. Tobin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a semiconductor device having a nitrided oxide d...
- Patent number 5,885,870
- Issue date Mar 23, 1999
- Motorola, Inc.
- Bikas Maiti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for reducing halogen concentration in a material layer duri...
- Patent number 5,830,802
- Issue date Nov 3, 1998
- Motorola Inc.
- Hsing-Huang Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of formation of semiconductor gate dielectric
- Patent number 5,726,087
- Issue date Mar 10, 1998
- Motorola, Inc.
- Hsing-Huang Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of formation of semiconductor composite gate dielectric hav...
- Patent number 5,712,208
- Issue date Jan 27, 1998
- Motorola, Inc.
- Hsing-Huang Tseng
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ELECTRONIC DEVICE COMPRISING A GATE ELECTRODE INCLUDING A METAL-CON...
- Publication number 20080048270
- Publication date Feb 28, 2008
- FREESCALE SEMICONDUCTOR, INC.
- Olubunmi O. Adetutu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A METHOD OF MAKING METAL GATE TRANSISTORS
- Publication number 20080001202
- Publication date Jan 3, 2008
- James K. Schaeffer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal oxynitride gate
- Publication number 20070284677
- Publication date Dec 13, 2007
- Weng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device comprising a transistor having a counter-doped...
- Publication number 20070178633
- Publication date Aug 2, 2007
- Olubunmi O. Adetutu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING DUAL-METAL GATE DEVICE
- Publication number 20070077698
- Publication date Apr 5, 2007
- FREESCALE SEMICONDUCTOR, INC.
- David C. Gilmer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device structure and method therefor
- Publication number 20060267113
- Publication date Nov 30, 2006
- Philip J. Tobin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electronic device comprising a gate electrode including a metal-con...
- Publication number 20060172516
- Publication date Aug 3, 2006
- FREESCALE SEMICONDUCTOR, INC.
- Olubunmi O. Adetutu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE INCLUDING DIELECTRIC LAYER, AND A PROCESS FOR FOR...
- Publication number 20060131671
- Publication date Jun 22, 2006
- Freescale Semiconductor, Inc.
- Rama I. Hegde
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method for fabricating dual-metal gate device
- Publication number 20050282326
- Publication date Dec 22, 2005
- David C. Gilmer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming an NMOS transistor and structure thereof
- Publication number 20050095763
- Publication date May 5, 2005
- Srikanth B. Samavedam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI template layer
- Publication number 20050070056
- Publication date Mar 31, 2005
- Chun-Li Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating dual-metal gate device
- Publication number 20040191974
- Publication date Sep 30, 2004
- David C. Gilmer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Capped dual metal gate transistors for CMOS process and method for...
- Publication number 20040023478
- Publication date Feb 5, 2004
- Srikanth B. Samavedam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate dielectric and method therefor
- Publication number 20030176049
- Publication date Sep 18, 2003
- Rama I. Hegde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Amorphous metal oxide gate dielectric structure and method thereof
- Publication number 20030054669
- Publication date Mar 20, 2003
- Prasad V. Alluri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selective metal oxide removal
- Publication number 20030022432
- Publication date Jan 30, 2003
- Christopher C. Hobbs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO LOCATE PARTICLES OF A PREDETERMINED SPECIES WITHIN A SOLI...
- Publication number 20010003381
- Publication date Jun 14, 2001
- MARIUS ORLOWSKI
- H01 - BASIC ELECTRIC ELEMENTS

Philip J. Tobin

Person

Patents Grantslast 30 patents

Method for fabricating dual-metal gate device

Electronic device comprising a gate electrode including a metal-con...

Method of making metal gate transistors

Semiconductor device comprising a transistor having a counter-doped...

Electronic device comprising a gate electrode including a metal-con...

Electronic device including dielectric layer, and a process for for...

Method of manufacturing SOI template layer

Method for forming a layer using a purging gas in a semiconductor p...

Method for fabricating dual-metal gate device

Capped dual metal gate transistors for CMOS process and method for...

Selective metal oxide removal performed in a reaction chamber in th...

Transistor with layered high-K gate dielectric and method therefor

Selective removal of a metal oxide dielectric

Semiconductor device and a process for forming the same

Process for forming a structure

Process for forming a semiconductor device and a conductive structure

Method for forming a semiconductor device with an opening in a diel...

Selective removal of a metal oxide dielectric

Process for forming a semiconductor device

Method for forming a semiconductor device

Method for forming a conductive structure having a composite or amo...

Semiconductor device having a metal containing layer overlying a ga...

Method for manufacturing a high dielectric constant gate oxide for...

CMOS semiconductor devices and method of formation

Method for forming high dielectric constant metal oxides

Process for forming a semiconductor device

Method for forming a semiconductor device having a nitrided oxide d...

Process for reducing halogen concentration in a material layer duri...

Method of formation of semiconductor gate dielectric

Methods of formation of semiconductor composite gate dielectric hav...

Patents Applicationslast 30 patents

ELECTRONIC DEVICE COMPRISING A GATE ELECTRODE INCLUDING A METAL-CON...

A METHOD OF MAKING METAL GATE TRANSISTORS

Metal oxynitride gate

Semiconductor device comprising a transistor having a counter-doped...

METHOD FOR FABRICATING DUAL-METAL GATE DEVICE

Semiconductor device structure and method therefor

Electronic device comprising a gate electrode including a metal-con...

ELECTRONIC DEVICE INCLUDING DIELECTRIC LAYER, AND A PROCESS FOR FOR...

Method for fabricating dual-metal gate device

Method of forming an NMOS transistor and structure thereof

SOI template layer

Method for fabricating dual-metal gate device

Capped dual metal gate transistors for CMOS process and method for...

Gate dielectric and method therefor

Amorphous metal oxide gate dielectric structure and method thereof

Selective metal oxide removal

METHOD TO LOCATE PARTICLES OF A PREDETERMINED SPECIES WITHIN A SOLI...