Philip Joseph Oldiges

Person

LaGrangeville, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Reducing error rates with alpha particle protection
- Patent number 11,152,378
- Issue date Oct 19, 2021
- International Business Machines Corporation
- Daniel L. Stasiak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-uniform gate dielectric for U-shape MOSFET
- Patent number 10,957,780
- Issue date Mar 23, 2021
- International Business Machines Corporation
- Pranita Kerber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field effect transistor with improved reliability
- Patent number 10,468,524
- Issue date Nov 5, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical FET with reduced parasitic capacitance
- Patent number 10,438,949
- Issue date Oct 8, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field effect transistor with improved reliability
- Patent number 10,297,688
- Issue date May 21, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical FET with reduced parasitic capacitance
- Patent number 10,283,504
- Issue date May 7, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-uniform gate dielectric for U-shape MOSFET
- Patent number 10,256,319
- Issue date Apr 9, 2019
- International Business Machines Corporation
- Pranita Kerber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical FET with reduced parasitic capacitance
- Patent number 10,074,652
- Issue date Sep 11, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical FET with reduced parasitic capacitance
- Patent number 9,853,028
- Issue date Dec 26, 2017
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET PCM access transistor having gate-wrapped source and drain r...
- Patent number 9,825,093
- Issue date Nov 21, 2017
- GLOBALFOUNDRIES Inc.
- Chung H. Lam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET PCM access transistor having gate-wrapped source and drain r...
- Patent number 9,825,094
- Issue date Nov 21, 2017
- GLOBALFOUNDRIES Inc.
- Chung H. Lam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric finFET memory access transistor
- Patent number 9,583,624
- Issue date Feb 28, 2017
- International Business Machines Corporation
- Chung H. Lam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric finFET memory access transistor
- Patent number 9,553,173
- Issue date Jan 24, 2017
- International Business Machines Corporation
- Chung H. Lam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radiation tolerant device structure
- Patent number 9,515,171
- Issue date Dec 6, 2016
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for quantifying fin-thickness variation in FINFET techno...
- Patent number 9,064,739
- Issue date Jun 23, 2015
- International Business Machines Corporation
- Wilfried E. A. Haensch
- G01 - MEASURING TESTING
Information Patent Grant
Methods for modeling of FinFET width quantization
- Patent number 9,058,441
- Issue date Jun 16, 2015
- International Business Machines Corporation
- Wilfried Ernest-August Haensch
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method and structure for dielectric isolation in a fin field effect...
- Patent number 9,034,715
- Issue date May 19, 2015
- International Business Machines Corporation
- Yanfeng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Minimizing leakage current and junction capacitance in CMOS transis...
- Patent number 8,993,395
- Issue date Mar 31, 2015
- International Business Machines Corporation
- Dureseti Chidambarrao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for quantifying fin-thickness variation in FINFET techno...
- Patent number 8,940,558
- Issue date Jan 27, 2015
- International Business Machines Corporation
- Wilfried E. A. Haensch
- G01 - MEASURING TESTING
Information Patent Grant
Stressed channel FET with source/drain buffers
- Patent number 8,921,939
- Issue date Dec 30, 2014
- International Business Machines Corporation
- Jeffrey B. Johnson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure for heavy ion tolerant device, method of manufacturing th...
- Patent number 8,890,256
- Issue date Nov 18, 2014
- International Business Machines Corporation
- Mark C. Hakey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus for modeling of FinFET width quantization
- Patent number 8,806,419
- Issue date Aug 12, 2014
- International Business Machines Corporation
- Wilfried Ernest-August Haensch
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Methods for modeling of FinFET width quantization
- Patent number 8,799,848
- Issue date Aug 5, 2014
- International Business Machines Corporation
- Wilfried Ernest-August Haensch
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Implant free extremely thin semiconductor devices
- Patent number 8,710,588
- Issue date Apr 29, 2014
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices having reduced susceptibility to soft-error effects and met...
- Patent number 8,642,407
- Issue date Feb 4, 2014
- International Business Machines Corporation
- Tak H. Ning
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Minimizing leakage current and junction capacitance in CMOS transis...
- Patent number 8,541,814
- Issue date Sep 24, 2013
- International Business Machines Corporation
- Dureseti Chidambarrao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interface structure for channel mobility improvement in high-k meta...
- Patent number 8,492,852
- Issue date Jul 23, 2013
- International Business Machines Corporation
- Tze-Chiang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stressed channel FET with source/drain buffers
- Patent number 8,361,847
- Issue date Jan 29, 2013
- International Business Machines Corporation
- Jeffrey B. Johnson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded stressor for semiconductor structures
- Patent number 8,354,720
- Issue date Jan 15, 2013
- International Business Machines Corporation
- Dechao Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and method for hardening latches in SOI CMOS devices
- Patent number 8,354,858
- Issue date Jan 15, 2013
- International Business Machines Corporation
- Ethan H. Cannon
- H03 - BASIC ELECTRONIC CIRCUITRY

Patents Applicationslast 30 patents

Information Patent Application
REDUCING ERROR RATES WITH ALPHA PARTICLE PROTECTION
- Publication number 20210305257
- Publication date Sep 30, 2021
- International Business Machines Corporation
- Daniel L. STASIAK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-UNIFORM GATE DIELECTRIC FOR U-SHAPE MOSFET
- Publication number 20190198640
- Publication date Jun 27, 2019
- International Business Machines Corporation
- Pranita Kerber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FET WITH REDUCED PARASITIC CAPACITANCE
- Publication number 20190181139
- Publication date Jun 13, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FET WITH REDUCED PARASITIC CAPACITANCE
- Publication number 20180301451
- Publication date Oct 18, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD EFFECT TRANSISTOR WITH IMPROVED RELIABILITY
- Publication number 20180277675
- Publication date Sep 27, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD EFFECT TRANSISTOR WITH IMPROVED RELIABILITY
- Publication number 20180277674
- Publication date Sep 27, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-UNIFORM GATE DIELECTRIC FOR U-SHAPE MOSFET
- Publication number 20170250263
- Publication date Aug 31, 2017
- International Business Machines Corporation
- Pranita Kerber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET PCM ACCESS TRANSISTOR HAVING GATE-WRAPPED SOURCE AND DRAIN R...
- Publication number 20170053966
- Publication date Feb 23, 2017
- GLOBALFOUNDRIES INC.
- Chung H. Lam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET PCM ACCESS TRANSISTOR HAVING GATE-WRAPPED SOURCE AND DRAIN R...
- Publication number 20170054005
- Publication date Feb 23, 2017
- GLOBAL FOUNDRIES Inc.
- Chung H. Lam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-UNIFORM GATE DIELECTRIC FOR U-SHAPE MOSFET
- Publication number 20160247888
- Publication date Aug 25, 2016
- International Business Machines Corporation
- Pranita Kerber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THIN BODY FET NANOPORE SENSOR FOR SENSING AND SCREENING BIOMOLECULES
- Publication number 20150014752
- Publication date Jan 15, 2015
- International Business Machines Corporation
- CHRISTOPHER P. D'EMIC
- G01 - MEASURING TESTING
Information Patent Application
METHODS FOR MODELING OF FINFET WIDTH QUANTIZATION
- Publication number 20140310676
- Publication date Oct 16, 2014
- Wilfried Ernest-August Haensch
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
METHOD AND STRUCTURE FOR DIELECTRIC ISOLATION IN A FIN FIELD EFFECT...
- Publication number 20140264591
- Publication date Sep 18, 2014
- International Business Machines Corporation
- Yanfeng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Techniques for Quantifying Fin-Thickness Variation in FINFET Techno...
- Publication number 20140266254
- Publication date Sep 18, 2014
- International Business Machines Corporation
- Wilfried E.A. Haensch
- G01 - MEASURING TESTING
Information Patent Application
Techniques for Quantifying Fin-Thickness Variation in FINFET Techno...
- Publication number 20140273298
- Publication date Sep 18, 2014
- International Business Machines Corporation
- Wilfried E.A. Haensch
- G01 - MEASURING TESTING
Information Patent Application
APPARATUS FOR MODELING OF FINFET WIDTH QUANTIZATION
- Publication number 20140201700
- Publication date Jul 17, 2014
- International Business Machines Corporation
- Wilfried Ernest-August HAENSCH
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
METHODS FOR MODELING OF FINFET WIDTH QUANTIZATION
- Publication number 20140201699
- Publication date Jul 17, 2014
- International Business Machines Corporation
- Wilfried Ernest-August HAENSCH
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MINIMIZING LEAKAGE CURRENT AND JUNCTION CAPACITANCE IN CMOS TRANSIS...
- Publication number 20130288440
- Publication date Oct 31, 2013
- Dureseti Chidambarrao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESSED CHANNEL FET WITH SOURCE/DRAIN BUFFERS
- Publication number 20130140636
- Publication date Jun 6, 2013
- International Business Machines Corporation
- Jeffrey B. Johnson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IMPLANT FREE EXTREMELY THIN SEMICONDUCTOR DEVICES
- Publication number 20130056802
- Publication date Mar 7, 2013
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED STRESSOR FOR SEMICONDUCTOR STRUCTURES
- Publication number 20120261728
- Publication date Oct 18, 2012
- International Business Machines Corporation
- Dechao Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MINIMIZING LEAKAGE CURRENT AND JUNCTION CAPACITANCE IN CMOS TRANSIS...
- Publication number 20120261672
- Publication date Oct 18, 2012
- International Business Machines Corporation
- Dureseti Chidambarrao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESSED CHANNEL FET WITH SOURCE/DRAIN BUFFERS
- Publication number 20120181549
- Publication date Jul 19, 2012
- International Business Machines Corporation
- Jeffrey B. Johnson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Stressor in Planar Field Effect Transistor Device
- Publication number 20120119266
- Publication date May 17, 2012
- International Business Machines Corporation
- Dechao Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES HAVING REDUCED SUSCEPTIBILITY TO SOFT-ERROR EFFECTS AND MET...
- Publication number 20120112246
- Publication date May 10, 2012
- International Business Machines Corporation
- TAK H. NING
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERFACE STRUCTURE FOR CHANNEL MOBILITY IMPROVEMENT IN HIGH-K META...
- Publication number 20110298060
- Publication date Dec 8, 2011
- International Business Machines Corporation
- Tze-Chiang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED STRESSOR FOR SEMICONDUCTOR STRUCTURES
- Publication number 20110121370
- Publication date May 26, 2011
- International Business Machines Corporation
- Dechao Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IMPLANT FREE EXTREMELY THIN SEMICONDUCTOR DEVICES
- Publication number 20110115022
- Publication date May 19, 2011
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS AND METHOD FOR HARDENING LATCHES IN SOI CMOS DEVICES
- Publication number 20110102042
- Publication date May 5, 2011
- International Business Machines Corporation
- Ethan H. Cannon
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
METHOD AND STRUCTURE FOR IMPROVING UNIFORMITY OF PASSIVE DEVICES IN...
- Publication number 20110037128
- Publication date Feb 17, 2011
- International Business Machines Corporation
- Satya N. Chakravarti
- H01 - BASIC ELECTRIC ELEMENTS

Philip Joseph Oldiges

Person

Patents Grantslast 30 patents

Reducing error rates with alpha particle protection

Non-uniform gate dielectric for U-shape MOSFET

Vertical field effect transistor with improved reliability

Vertical FET with reduced parasitic capacitance

Vertical field effect transistor with improved reliability

Vertical FET with reduced parasitic capacitance

Non-uniform gate dielectric for U-shape MOSFET

Vertical FET with reduced parasitic capacitance

Vertical FET with reduced parasitic capacitance

FinFET PCM access transistor having gate-wrapped source and drain r...

FinFET PCM access transistor having gate-wrapped source and drain r...

Asymmetric finFET memory access transistor

Asymmetric finFET memory access transistor

Radiation tolerant device structure

Techniques for quantifying fin-thickness variation in FINFET techno...

Methods for modeling of FinFET width quantization

Method and structure for dielectric isolation in a fin field effect...

Minimizing leakage current and junction capacitance in CMOS transis...

Techniques for quantifying fin-thickness variation in FINFET techno...

Stressed channel FET with source/drain buffers

Structure for heavy ion tolerant device, method of manufacturing th...

Apparatus for modeling of FinFET width quantization

Methods for modeling of FinFET width quantization

Implant free extremely thin semiconductor devices

Devices having reduced susceptibility to soft-error effects and met...

Minimizing leakage current and junction capacitance in CMOS transis...

Interface structure for channel mobility improvement in high-k meta...

Stressed channel FET with source/drain buffers

Embedded stressor for semiconductor structures

Apparatus and method for hardening latches in SOI CMOS devices

Patents Applicationslast 30 patents

REDUCING ERROR RATES WITH ALPHA PARTICLE PROTECTION

NON-UNIFORM GATE DIELECTRIC FOR U-SHAPE MOSFET

VERTICAL FET WITH REDUCED PARASITIC CAPACITANCE

VERTICAL FET WITH REDUCED PARASITIC CAPACITANCE

VERTICAL FIELD EFFECT TRANSISTOR WITH IMPROVED RELIABILITY

VERTICAL FIELD EFFECT TRANSISTOR WITH IMPROVED RELIABILITY

NON-UNIFORM GATE DIELECTRIC FOR U-SHAPE MOSFET

FINFET PCM ACCESS TRANSISTOR HAVING GATE-WRAPPED SOURCE AND DRAIN R...

FINFET PCM ACCESS TRANSISTOR HAVING GATE-WRAPPED SOURCE AND DRAIN R...

NON-UNIFORM GATE DIELECTRIC FOR U-SHAPE MOSFET

THIN BODY FET NANOPORE SENSOR FOR SENSING AND SCREENING BIOMOLECULES

METHODS FOR MODELING OF FINFET WIDTH QUANTIZATION

METHOD AND STRUCTURE FOR DIELECTRIC ISOLATION IN A FIN FIELD EFFECT...

Techniques for Quantifying Fin-Thickness Variation in FINFET Techno...

Techniques for Quantifying Fin-Thickness Variation in FINFET Techno...

APPARATUS FOR MODELING OF FINFET WIDTH QUANTIZATION

METHODS FOR MODELING OF FINFET WIDTH QUANTIZATION

MINIMIZING LEAKAGE CURRENT AND JUNCTION CAPACITANCE IN CMOS TRANSIS...

STRESSED CHANNEL FET WITH SOURCE/DRAIN BUFFERS

IMPLANT FREE EXTREMELY THIN SEMICONDUCTOR DEVICES

EMBEDDED STRESSOR FOR SEMICONDUCTOR STRUCTURES

MINIMIZING LEAKAGE CURRENT AND JUNCTION CAPACITANCE IN CMOS TRANSIS...

STRESSED CHANNEL FET WITH SOURCE/DRAIN BUFFERS

Stressor in Planar Field Effect Transistor Device

DEVICES HAVING REDUCED SUSCEPTIBILITY TO SOFT-ERROR EFFECTS AND MET...

INTERFACE STRUCTURE FOR CHANNEL MOBILITY IMPROVEMENT IN HIGH-K META...

EMBEDDED STRESSOR FOR SEMICONDUCTOR STRUCTURES

IMPLANT FREE EXTREMELY THIN SEMICONDUCTOR DEVICES

APPARATUS AND METHOD FOR HARDENING LATCHES IN SOI CMOS DEVICES

METHOD AND STRUCTURE FOR IMPROVING UNIFORMITY OF PASSIVE DEVICES IN...