Po-Hsin Liu

Person

Anaheim, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Self-aligned double gate recess for semiconductor field effect tran...
- Patent number 9,583,589
- Issue date Feb 28, 2017
- Northrop Grumman Systems Corporation
- Xiaobing Mei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a gate contact
- Patent number 9,048,184
- Issue date Jun 2, 2015
- Northrop Grumman Systems Corporation
- Carol O. Namba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a high electron mobility transistor hemt, utilizi...
- Patent number 7,897,446
- Issue date Mar 1, 2011
- Northrop Grumman Systems Corporation
- Ioulia Smorchkova
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor semiconductor device having field...
- Patent number 7,800,132
- Issue date Sep 21, 2010
- Northrop Grumman Systems Corporation
- Ioulia Smorchkova
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for detecting and adjusting substrate height
- Patent number 7,800,766
- Issue date Sep 21, 2010
- Northrop Grumman Space & Mission Systems Corp.
- Carol Osaka Namba
- B82 - NANO-TECHNOLOGY
Information Patent Grant
High electron mobility transistor having self-aligned miniature fie...
- Patent number 7,750,370
- Issue date Jul 6, 2010
- Northrop Grumman Space & Mission Systems Corp.
- Ioulia Smorchkova
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor semiconductor device and fabricat...
- Patent number 7,709,860
- Issue date May 4, 2010
- Northrop Grumman Space & Mission Systems Corp.
- Linh Dang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Club extension to a T-gate high electron mobility transistor
- Patent number 7,608,865
- Issue date Oct 27, 2009
- Northrop Grumman Space & Mission Systems Corp.
- Carol Osaka Namba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor semiconductor device and fabricat...
- Patent number 7,582,518
- Issue date Sep 1, 2009
- Northrop Grumman Space & Mission Systems Corp.
- Linh Dang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor (HEMT) structure with refractory...
- Patent number 7,411,226
- Issue date Aug 12, 2008
- Northrop Grumman Corporation
- Yeong-Chang Choug
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to separate a metal film from an insulating film in a semico...
- Patent number 6,569,763
- Issue date May 27, 2003
- Northrop Grumman Corporation
- Ronald W. Grundbacher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High power pseudomorphic gallium arsenide high electron mobility tr...
- Patent number 5,262,660
- Issue date Nov 16, 1993
- TRW Inc.
- Dwight C. Streit
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
High electron mobility transistor having self-aligned miniature fie...
- Publication number 20100184262
- Publication date Jul 22, 2010
- Northrop Grumman Space & Mission Systems Corp.
- Ioulia Smorchkova
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CLUB EXTENSION TO A T-GATE HIGH ELECTRON MOBILITY TRANSISTOR
- Publication number 20090267115
- Publication date Oct 29, 2009
- Carol Osaka Namba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR SEMICONDUCTOR DEVICE AND FABRICAT...
- Publication number 20090206369
- Publication date Aug 20, 2009
- Northrop Grumman Space & Mission Systems Corp.
- Linh Dang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High electron mobility transistor having self-aligned miniature fie...
- Publication number 20090159930
- Publication date Jun 25, 2009
- Northrop Grumman Space and Mission System Corp.
- loulia Smorchkova
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High electron mobility transistor semiconductor device having field...
- Publication number 20090108299
- Publication date Apr 30, 2009
- Northrop Grumman Space & Mission Systems Corp.
- Ioulia Smorchkova
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and Apparatus For Detecting and Adjusting Substrate Height
- Publication number 20090078888
- Publication date Mar 26, 2009
- Northrop Grumman Space & Mission Systems Corp.
- Carol Osaka Namba
- B82 - NANO-TECHNOLOGY
Information Patent Application
High electron mobility transistor semiconductor device and fabricat...
- Publication number 20080111157
- Publication date May 15, 2008
- Northrop Grumman Corporation
- Linh Dang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High electron mobility transistor (HEMT) structure with refractory...
- Publication number 20060244009
- Publication date Nov 2, 2006
- Northrop Grumman Corporation
- Yeong-Chang Choug
- H01 - BASIC ELECTRIC ELEMENTS

Po-Hsin Liu

Person

Patents Grantslast 30 patents

Self-aligned double gate recess for semiconductor field effect tran...

Method of forming a gate contact

Method of forming a high electron mobility transistor hemt, utilizi...

High electron mobility transistor semiconductor device having field...

Method and apparatus for detecting and adjusting substrate height

High electron mobility transistor having self-aligned miniature fie...

High electron mobility transistor semiconductor device and fabricat...

Club extension to a T-gate high electron mobility transistor

High electron mobility transistor semiconductor device and fabricat...

High electron mobility transistor (HEMT) structure with refractory...

Method to separate a metal film from an insulating film in a semico...

High power pseudomorphic gallium arsenide high electron mobility tr...

Patents Applicationslast 30 patents

High electron mobility transistor having self-aligned miniature fie...

CLUB EXTENSION TO A T-GATE HIGH ELECTRON MOBILITY TRANSISTOR

HIGH ELECTRON MOBILITY TRANSISTOR SEMICONDUCTOR DEVICE AND FABRICAT...

High electron mobility transistor having self-aligned miniature fie...

High electron mobility transistor semiconductor device having field...

Method and Apparatus For Detecting and Adjusting Substrate Height

High electron mobility transistor semiconductor device and fabricat...

High electron mobility transistor (HEMT) structure with refractory...