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Pranita Kerber
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Mount Kisco, NY, US
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Patents Grants
last 30 patents
Information
Patent Grant
Non-uniform gate dielectric for U-shape MOSFET
Patent number
10,957,780
Issue date
Mar 23, 2021
International Business Machines Corporation
Pranita Kerber
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
III-V transistor device with self-aligned doped bottom barrier
Patent number
10,937,871
Issue date
Mar 2, 2021
International Business Machines Corporation
Cheng-Wei Cheng
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Transistor structure with varied gate cross-sectional area
Patent number
10,680,085
Issue date
Jun 9, 2020
GLOBALFOUNDRIES Inc.
Dominic J. Schepis
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Structure and method for tensile and compressive strained silicon g...
Patent number
10,643,907
Issue date
May 5, 2020
International Business Machines Corporation
Pranita Kerber
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor device including epitaxially formed buried channel re...
Patent number
10,374,042
Issue date
Aug 6, 2019
International Business Machines Corporation
Jie Deng
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
High-k gate dielectric and metal gate conductor stack for fin-type...
Patent number
10,262,999
Issue date
Apr 16, 2019
International Business Machines Corporation
Takashi Ando
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Non-uniform gate dielectric for U-shape MOSFET
Patent number
10,256,319
Issue date
Apr 9, 2019
International Business Machines Corporation
Pranita Kerber
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
High-K gate dielectric and metal gate conductor stack for fin-type...
Patent number
10,217,745
Issue date
Feb 26, 2019
International Business Machines Corporation
Takashi Ando
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Structure and method for tensile and compressive strained silicon g...
Patent number
10,204,837
Issue date
Feb 12, 2019
International Business Machines Corporation
Pranita Kerber
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Metallized junction FinFET structures
Patent number
10,192,888
Issue date
Jan 29, 2019
International Business Machines Corporation
Bruce B. Doris
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
SiGe FinFET with improved junction doping control
Patent number
10,176,990
Issue date
Jan 8, 2019
International Business Machines Corporation
Pranita Kerber
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
High-K gate dielectric and metal gate conductor stack for fin-type...
Patent number
10,002,871
Issue date
Jun 19, 2018
International Business Machines Corporation
Takashi Ando
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Structure and method for tensile and compressive strained silicon g...
Patent number
10,002,798
Issue date
Jun 19, 2018
International Business Machines Corporation
Pranita Kerber
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Reduced resistance short-channel InGaAs planar MOSFET
Patent number
9,972,711
Issue date
May 15, 2018
International Business Machines Corporation
Pranita Kerber
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Transistor structure with varied gate cross-sectional area
Patent number
9,966,457
Issue date
May 8, 2018
GLOBALFOUNDRIES Inc.
Dominic J. Schepis
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
III-V transistor device with self-aligned doped bottom barrier
Patent number
9,941,363
Issue date
Apr 10, 2018
International Business Machines Corporation
Cheng-Wei Cheng
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
High-k gate dielectric and metal gate conductor stack for fin-type...
Patent number
9,859,279
Issue date
Jan 2, 2018
International Business Machines Corporation
Takashi Ando
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor device and method of manufacturing the semiconductor...
Patent number
9,812,556
Issue date
Nov 7, 2017
Renesas Electronics Corporation
Shogo Mochizuki
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Asymmetric III-V MOSFET on silicon substrate
Patent number
9,773,903
Issue date
Sep 26, 2017
International Business Machines Corporation
Cheng-Wei Cheng
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Structure and method for multi-threshold voltage adjusted silicon g...
Patent number
9,755,078
Issue date
Sep 5, 2017
International Business Machines Corporation
Pouya Hashemi
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for forming through silicon via in N+ epitaxy wafers with re...
Patent number
9,748,114
Issue date
Aug 29, 2017
International Business Machines Corporation
Kangguo Cheng
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
FinFET device with vertical silicide on recessed source/drain epita...
Patent number
9,741,807
Issue date
Aug 22, 2017
International Business Machines Corporation
Keith E. Fogel
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Reduced current leakage semiconductor device
Patent number
9,722,031
Issue date
Aug 1, 2017
International Business Machines Corporation
Cheng-Wei Cheng
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor device including epitaxially formed buried channel re...
Patent number
9,679,969
Issue date
Jun 13, 2017
International Business Machines Corporation
Jie Deng
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
ESD device compatible with bulk bias capability
Patent number
9,673,190
Issue date
Jun 6, 2017
International Business Machines Corporation
Kangguo Cheng
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Structure and method for tensile and compressive strained silicon g...
Patent number
9,647,119
Issue date
May 9, 2017
International Business Machines Corporation
Pranita Kerber
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Multi-height fin field effect transistors
Patent number
9,640,552
Issue date
May 2, 2017
GLOBALFOUNDRIES Inc.
Pranita Kerber
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Metallized junction FinFET structures
Patent number
9,634,028
Issue date
Apr 25, 2017
International Business Machines Corporation
Bruce B. Doris
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Metallized junction FinFET structures
Patent number
9,627,410
Issue date
Apr 18, 2017
International Business Machines Corporation
Bruce B. Doris
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Reduced current leakage semiconductor device
Patent number
9,627,482
Issue date
Apr 18, 2017
International Business Machines Corporation
Cheng-Wei Cheng
H01 - BASIC ELECTRIC ELEMENTS
Patents Applications
last 30 patents
Information
Patent Application
NON-UNIFORM GATE DIELECTRIC FOR U-SHAPE MOSFET
Publication number
20190198640
Publication date
Jun 27, 2019
International Business Machines Corporation
Pranita Kerber
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
STRUCTURE AND METHOD FOR TENSILE AND COMPRESSIVE STRAINED SILICON G...
Publication number
20190157167
Publication date
May 23, 2019
International Business Machines Corporation
Pranita Kerber
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
HIGH-K GATE DIELECTRIC AND METAL GATE CONDUCTOR STACK FOR FIN-TYPE...
Publication number
20180240799
Publication date
Aug 23, 2018
International Business Machines Corporation
Takashi Ando
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
STRUCTURE AND METHOD FOR TENSILE AND COMPRESSIVE STRAINED SILICON G...
Publication number
20180233418
Publication date
Aug 16, 2018
International Business Machines Corporation
Pranita Kerber
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
TRANSISTOR STRUCTURE WITH VARIED GATE CROSS-SECTIONAL AREA
Publication number
20180190797
Publication date
Jul 5, 2018
GLOBALFOUNDRIES INC.
Dominic J. Schepis
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
III-V TRANSISTOR DEVICE WITH SELF-ALIGNED DOPED BOTTOM BARRIER
Publication number
20180151674
Publication date
May 31, 2018
International Business Machines Corporation
Cheng-Wei Cheng
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
HIGH-K GATE DIELECTRIC AND METAL GATE CONDUCTOR STACK FOR FIN-TYPE...
Publication number
20170358579
Publication date
Dec 14, 2017
International Business Machines Corporation
Takashi Ando
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
TRANSISTOR STRUCTURE WITH VARIED GATE CROSS-SECTIONAL AREA
Publication number
20170271483
Publication date
Sep 21, 2017
GLOBALFOUNDRIES INC.
Dominic J. Schepis
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
NON-UNIFORM GATE DIELECTRIC FOR U-SHAPE MOSFET
Publication number
20170250263
Publication date
Aug 31, 2017
International Business Machines Corporation
Pranita Kerber
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
METALLIZED JUNCTION FINFET STRUCTURES
Publication number
20170221926
Publication date
Aug 3, 2017
International Business Machines Corporation
Bruce B. Doris
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
HIGH-K GATE DIELECTRIC AND METAL GATE CONDUCTOR STACK FOR FIN-TYPE...
Publication number
20170221898
Publication date
Aug 3, 2017
International Business Machines Corporation
Takashi Ando
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
STRUCTURE AND METHOD FOR TENSILE AND COMPRESSIVE STRAINED SILICON G...
Publication number
20170207136
Publication date
Jul 20, 2017
International Business Machines Corporation
Pranita Kerber
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
III-V TRANSISTOR DEVICE WITH DOPED BOTTOM BARRIER
Publication number
20170179232
Publication date
Jun 22, 2017
International Business Machines Corporation
Cheng-Wei Cheng
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
III-V TRANSISTOR DEVICE WITH SELF-ALIGNED DOPED BOTTOM BARRIER
Publication number
20170179288
Publication date
Jun 22, 2017
International Business Machines Corporation
Cheng-Wei Cheng
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
STRUCTURE AND METHOD FOR MULTI-THRESHOLD VOLTAGE ADJUSTED SILICON G...
Publication number
20170117413
Publication date
Apr 27, 2017
International Business Machines Corporation
Pouya Hashemi
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
ESD DEVICE COMPATIBLE WITH BULK BIAS CAPABILITY
Publication number
20170098646
Publication date
Apr 6, 2017
International Business Machines Corporation
Kangguo Cheng
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
ASYMMETRIC III-V MOSFET ON SILICON SUBSTRATE
Publication number
20170092763
Publication date
Mar 30, 2017
International Business Machines Corporation
Cheng-Wei Cheng
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
FINFET DEVICE WITH VERTICAL SILICIDE ON RECESSED SOURCE/DRAIN EPITA...
Publication number
20170077249
Publication date
Mar 16, 2017
International Business Machines Corporation
Keith E. Fogel
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SEMICONDUCTOR DEVICE INCLUDING EPITAXIALLY FORMED BURIED CHANNEL RE...
Publication number
20170069718
Publication date
Mar 9, 2017
International Business Machines Corporation
Jie Deng
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SEMICONDUCTOR DEVICE INCLUDING EPITAXIALLY FORMED BURIED CHANNEL RE...
Publication number
20170062589
Publication date
Mar 2, 2017
International Business Machines Corporation
Jie Deng
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SEMICONDUCTOR DEVICE INCLUDING EPITAXIALLY FORMED BURIED CHANNEL RE...
Publication number
20170062570
Publication date
Mar 2, 2017
International Business Machines Corporation
Jie Deng
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SEMICONDUCTOR DEVICE INCLUDING EPITAXIALLY FORMED BURIED CHANNEL RE...
Publication number
20170062602
Publication date
Mar 2, 2017
International Business Machines Corporation
Jie Deng
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
HIGH-K GATE DIELECTRIC AND METAL GATE CONDUCTOR STACK FOR FIN-TYPE...
Publication number
20170053915
Publication date
Feb 23, 2017
International Business Machines Corporation
Takashi Ando
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
REDUCED RESISTANCE SHORT-CHANNEL InGaAs PLANAR MOSFET
Publication number
20160359036
Publication date
Dec 8, 2016
International Business Machines Corporation
Pranita Kerber
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SiGe FINFET WITH IMPROVED JUNCTION DOPING CONTROL
Publication number
20160358775
Publication date
Dec 8, 2016
International Business Machines Corporation
Pranita Kerber
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
METALLIZED JUNCTION FINFET STRUCTURES
Publication number
20160343572
Publication date
Nov 24, 2016
International Business Machines Corporation
Bruce B. Doris
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
METALLIZED JUNCTION FINFET STRUCTURES
Publication number
20160343734
Publication date
Nov 24, 2016
International Business Machines Corporation
Bruce B. Doris
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
FINFET DEVICE WITH VERTICAL SILICIDE ON RECESSED SOURCE/DRAIN EPITA...
Publication number
20160293428
Publication date
Oct 6, 2016
International Business Machines Corporation
Keith E. Fogel
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
REDUCED CURRENT LEAKAGE SEMICONDUCTOR DEVICE
Publication number
20160254193
Publication date
Sep 1, 2016
International Business Machines Corporation
Cheng-Wei Cheng
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
REDUCED CURRENT LEAKAGE SEMICONDUCTOR DEVICE
Publication number
20160254352
Publication date
Sep 1, 2016
International Business Machines Corporation
Cheng-Wei Cheng
H01 - BASIC ELECTRIC ELEMENTS