PRASHANT MAJHI

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Pillar select transistor for 3-dimensional cross point memory
- Patent number 12,268,011
- Issue date Apr 1, 2025
- Intel Corporation
- Prashant Majhi
- G11 - INFORMATION STORAGE
Information Patent Grant
Monolithic memory stack
- Patent number 12,058,847
- Issue date Aug 6, 2024
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus with multi-wafer based device and method for forming such
- Patent number 11,948,831
- Issue date Apr 2, 2024
- Intel Corporation
- Anup Pancholi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double-gated ferroelectric field-effect transistor
- Patent number 11,895,846
- Issue date Feb 6, 2024
- Intel Corporation
- Abhishek A. Sharma
- G11 - INFORMATION STORAGE
Information Patent Grant
Antiferroelectric gate dielectric transistors and their methods of...
- Patent number 11,764,282
- Issue date Sep 19, 2023
- Intel Corporation
- Ravi Pillarisetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film tunnel field effect transistors having relatively increas...
- Patent number 11,735,595
- Issue date Aug 22, 2023
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin-film-transistor based complementary metal-oxide-semiconductor...
- Patent number 11,659,722
- Issue date May 23, 2023
- Intel Corporation
- Willy Rachmady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric field effect transistors (FeFETs) having band-enginee...
- Patent number 11,640,995
- Issue date May 2, 2023
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
1S-1T ferroelectric memory
- Patent number 11,640,839
- Issue date May 2, 2023
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D memory array with memory cells having a 3D selector and a storag...
- Patent number 11,631,717
- Issue date Apr 18, 2023
- Intel Corporation
- Charles Kuo
- G11 - INFORMATION STORAGE
Information Patent Grant
Integration of metasurface lens on wafer level substrate
- Patent number 11,626,437
- Issue date Apr 11, 2023
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IC including back-end-of-line (BEOL) transistors with crystalline c...
- Patent number 11,616,057
- Issue date Mar 28, 2023
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double selector element for low voltage bipolar memory devices
- Patent number 11,605,671
- Issue date Mar 14, 2023
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selector element with ballast for low voltage bipolar memory devices
- Patent number 11,522,011
- Issue date Dec 6, 2022
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric gate oxide based tunnel feFET memory
- Patent number 11,488,978
- Issue date Nov 1, 2022
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal filament memory cells
- Patent number 11,430,949
- Issue date Aug 30, 2022
- Intel Corporation
- Ravi Pillarisetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RRAM memory cell and process to increase RRAM material area in an R...
- Patent number 11,417,705
- Issue date Aug 16, 2022
- Intel Corporation
- Brian Doyle
- G11 - INFORMATION STORAGE
Information Patent Grant
Selector devices with integrated barrier materials
- Patent number 11,404,639
- Issue date Aug 2, 2022
- Intel Corporation
- Elijah V. Karpov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film based 1T-1R cell with resistive random access memory belo...
- Patent number 11,393,526
- Issue date Jul 19, 2022
- Intel Corporation
- Ravi Pillarisetty
- G11 - INFORMATION STORAGE
Information Patent Grant
Independently scaling selector and memory in memory cell
- Patent number 11,393,874
- Issue date Jul 19, 2022
- Intel Corporation
- Brian S. Doyle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selector devices
- Patent number 11,374,056
- Issue date Jun 28, 2022
- Intel Corporation
- Elijah V. Karpov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Word line with air-gap for non-volatile memories
- Patent number 11,362,140
- Issue date Jun 14, 2022
- Intel Corporation
- Prashant Majhi
- G11 - INFORMATION STORAGE
Information Patent Grant
Strained thin film transistors
- Patent number 11,342,457
- Issue date May 24, 2022
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film tunnel field effect transistors having relatively increas...
- Patent number 11,335,705
- Issue date May 17, 2022
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double-gated ferroelectric field-effect transistor
- Patent number 11,289,509
- Issue date Mar 29, 2022
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
1S-1T ferroelectric memory
- Patent number 11,250,899
- Issue date Feb 15, 2022
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of high density cross-point memory and CMOS logic for h...
- Patent number 11,233,040
- Issue date Jan 25, 2022
- Intel Corporation
- Elijah V. Karpov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double selector element for low voltage bipolar memory devices
- Patent number 11,233,090
- Issue date Jan 25, 2022
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backend electrostatic discharge diode apparatus and method of fabri...
- Patent number 11,222,885
- Issue date Jan 11, 2022
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistance field-effect transistors and methods of manufacturin...
- Patent number 11,211,489
- Issue date Dec 28, 2021
- Intel Corporation
- Brian Doyle
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MEMORY LAYERS AT OPPOSING SIDES OF A COMPLEMENTARY METAL-OXIDE SEMI...
- Publication number 20250098179
- Publication date Mar 20, 2025
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PACKAGING ARCHITECTURE INCLUDING COMPENSATION LAYERS FOR WAFER-SCAL...
- Publication number 20250006695
- Publication date Jan 2, 2025
- Intel Corporation
- Bhaskar Jyoti Krishnatreya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND APPARATUS TO AUTOMATE A DESIGN INCLUDING ROUTING BETWEE...
- Publication number 20240220699
- Publication date Jul 4, 2024
- Intel Corporation
- Michael Goldsmith
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MICROELECTRONIC ASSEMBLIES INCLUDING STACKED DIES COUPLED BY A THRO...
- Publication number 20240006366
- Publication date Jan 4, 2024
- Intel Corporation
- Stephen Morein
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MICROELECTRONIC ASSEMBLIES INCLUDING STACKED DIES COUPLED BY A THRO...
- Publication number 20240006381
- Publication date Jan 4, 2024
- Intel Corporation
- Stephen Morein
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH FERROELECTRIC GATES
- Publication number 20230223475
- Publication date Jul 13, 2023
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CO-INTEGRATION OF HIGH VOLTAGE (HV) AND LOW VOLTAGE (LV) TRANSISTOR...
- Publication number 20230197724
- Publication date Jun 22, 2023
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIODE STRUCTURE WITH BACKSIDE EPITAXIAL GROWTH
- Publication number 20230197862
- Publication date Jun 22, 2023
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID CHANNEL REGION FOR GATE ALL AROUND (GAA) TRANSISTOR STRUCTURES
- Publication number 20230197812
- Publication date Jun 22, 2023
- Intel Corporation
- Anand Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONDUCTIVE FEATURES FORMED USING METAL ASSISTED ETCH
- Publication number 20230197568
- Publication date Jun 22, 2023
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT VIA AND BURIED OR BACKSIDE POWER RAIL
- Publication number 20230197613
- Publication date Jun 22, 2023
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT DEEP VIA AND BURIED OR BACKSIDE POWER RAIL WITH BACKSID...
- Publication number 20230197614
- Publication date Jun 22, 2023
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACTS WITH INTERFACE FERMI LEVEL TUNING LAYERS
- Publication number 20230197825
- Publication date Jun 22, 2023
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE POWER DELIVERY NETWORK AND SIGNAL ROUTING
- Publication number 20230197612
- Publication date Jun 22, 2023
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WRAP-AROUND CONTACT WITH REDUCED RESISTANCE
- Publication number 20230187507
- Publication date Jun 15, 2023
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETCH STOP LAYER FOR BACKSIDE PROCESSING ARCHITECTURE
- Publication number 20230187273
- Publication date Jun 15, 2023
- Intel Corporation
- Anand Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RECESSED INNER GATE SPACERS AND PARTIAL REPLACEMENT CHANNEL IN NON-...
- Publication number 20230178658
- Publication date Jun 8, 2023
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAINED SEMICONDUCTOR ON INSULATOR (SSOI) BASED GATE ALL AROUND (G...
- Publication number 20230170420
- Publication date Jun 1, 2023
- Intel Corporation
- Anand Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT CONDUCTIVE MATERIAL FOR INTERCONNECT FEATURES
- Publication number 20230163024
- Publication date May 25, 2023
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STAIRCASE-BASED METAL-INSULATOR-METAL (MIM) CAPACITORS
- Publication number 20230163063
- Publication date May 25, 2023
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERCONNECTS WITH LINER THAT RESONATES DURING MICROWAVE ANNEAL
- Publication number 20230133484
- Publication date May 4, 2023
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES WITH FINFETS OVER GATE-ALL-AROUND TRANSI...
- Publication number 20230086977
- Publication date Mar 23, 2023
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT ASSEMBLIES WITH STACKED COMPUTE LOGIC AND MEMORY...
- Publication number 20230022167
- Publication date Jan 26, 2023
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELLS WITH NON-PLANAR FERROELECTRIC OR ANTIFERROELECTRIC MAT...
- Publication number 20230008261
- Publication date Jan 12, 2023
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL (3D) NAND COMPONENT WITH CONTROL CIRCUITRY ACROSS...
- Publication number 20220359441
- Publication date Nov 10, 2022
- Intel Corporation
- Khaled HASNAT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTOR DEVICES
- Publication number 20220262860
- Publication date Aug 18, 2022
- Intel Corporation
- Elijah V. Karpov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THIN FILM TUNNEL FIELD EFFECT TRANSISTORS HAVING RELATIVELY INCREAS...
- Publication number 20220246646
- Publication date Aug 4, 2022
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITIONAL ENGINEERING OF SCHOTTKY DIODE
- Publication number 20220199839
- Publication date Jun 23, 2022
- Intel Corporation
- Arnab SEN GUPTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL METHOD TO FORM SINGLE CRYSTAL MOSFET AND FEFET
- Publication number 20220199801
- Publication date Jun 23, 2022
- Intel Corporation
- Prashant MAJHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL ESD PROTECTION DECOUPLED FROM DIFFUSION
- Publication number 20220199609
- Publication date Jun 23, 2022
- Intel Corporation
- Urusa ALAAN
- H01 - BASIC ELECTRIC ELEMENTS

PRASHANT MAJHI

Person

Patents Grantslast 30 patents

Pillar select transistor for 3-dimensional cross point memory

Monolithic memory stack

Apparatus with multi-wafer based device and method for forming such

Double-gated ferroelectric field-effect transistor

Antiferroelectric gate dielectric transistors and their methods of...

Thin film tunnel field effect transistors having relatively increas...

Thin-film-transistor based complementary metal-oxide-semiconductor...

Ferroelectric field effect transistors (FeFETs) having band-enginee...

1S-1T ferroelectric memory

3D memory array with memory cells having a 3D selector and a storag...

Integration of metasurface lens on wafer level substrate

IC including back-end-of-line (BEOL) transistors with crystalline c...

Double selector element for low voltage bipolar memory devices

Selector element with ballast for low voltage bipolar memory devices

Ferroelectric gate oxide based tunnel feFET memory

Metal filament memory cells

RRAM memory cell and process to increase RRAM material area in an R...

Selector devices with integrated barrier materials

Thin film based 1T-1R cell with resistive random access memory belo...

Independently scaling selector and memory in memory cell

Selector devices

Word line with air-gap for non-volatile memories

Strained thin film transistors

Thin film tunnel field effect transistors having relatively increas...

Double-gated ferroelectric field-effect transistor

1S-1T ferroelectric memory

Integration of high density cross-point memory and CMOS logic for h...

Double selector element for low voltage bipolar memory devices

Backend electrostatic discharge diode apparatus and method of fabri...

Low resistance field-effect transistors and methods of manufacturin...

Patents Applicationslast 30 patents

MEMORY LAYERS AT OPPOSING SIDES OF A COMPLEMENTARY METAL-OXIDE SEMI...

PACKAGING ARCHITECTURE INCLUDING COMPENSATION LAYERS FOR WAFER-SCAL...

METHODS AND APPARATUS TO AUTOMATE A DESIGN INCLUDING ROUTING BETWEE...

MICROELECTRONIC ASSEMBLIES INCLUDING STACKED DIES COUPLED BY A THRO...

MICROELECTRONIC ASSEMBLIES INCLUDING STACKED DIES COUPLED BY A THRO...

TRANSISTORS WITH FERROELECTRIC GATES

CO-INTEGRATION OF HIGH VOLTAGE (HV) AND LOW VOLTAGE (LV) TRANSISTOR...

DIODE STRUCTURE WITH BACKSIDE EPITAXIAL GROWTH

HYBRID CHANNEL REGION FOR GATE ALL AROUND (GAA) TRANSISTOR STRUCTURES

CONDUCTIVE FEATURES FORMED USING METAL ASSISTED ETCH

REPLACEMENT VIA AND BURIED OR BACKSIDE POWER RAIL

REPLACEMENT DEEP VIA AND BURIED OR BACKSIDE POWER RAIL WITH BACKSID...

CONTACTS WITH INTERFACE FERMI LEVEL TUNING LAYERS

BACKSIDE POWER DELIVERY NETWORK AND SIGNAL ROUTING

WRAP-AROUND CONTACT WITH REDUCED RESISTANCE

ETCH STOP LAYER FOR BACKSIDE PROCESSING ARCHITECTURE

RECESSED INNER GATE SPACERS AND PARTIAL REPLACEMENT CHANNEL IN NON-...

STRAINED SEMICONDUCTOR ON INSULATOR (SSOI) BASED GATE ALL AROUND (G...

REPLACEMENT CONDUCTIVE MATERIAL FOR INTERCONNECT FEATURES

STAIRCASE-BASED METAL-INSULATOR-METAL (MIM) CAPACITORS

INTERCONNECTS WITH LINER THAT RESONATES DURING MICROWAVE ANNEAL

INTEGRATED CIRCUIT DEVICES WITH FINFETS OVER GATE-ALL-AROUND TRANSI...

INTEGRATED CIRCUIT ASSEMBLIES WITH STACKED COMPUTE LOGIC AND MEMORY...

MEMORY CELLS WITH NON-PLANAR FERROELECTRIC OR ANTIFERROELECTRIC MAT...

THREE-DIMENSIONAL (3D) NAND COMPONENT WITH CONTROL CIRCUITRY ACROSS...

SELECTOR DEVICES

THIN FILM TUNNEL FIELD EFFECT TRANSISTORS HAVING RELATIVELY INCREAS...

COMPOSITIONAL ENGINEERING OF SCHOTTKY DIODE

NOVEL METHOD TO FORM SINGLE CRYSTAL MOSFET AND FEFET

NOVEL ESD PROTECTION DECOUPLED FROM DIFFUSION