Pu-Ju Kung

Person

Taipei, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Trench MOS device having a termination structure with multiple fiel...
- Patent number 9,178,015
- Issue date Nov 3, 2015
- Vishay General Semiconductor LLC
- Yi-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low forward voltage drop transient voltage suppressor and method of...
- Patent number 8,111,495
- Issue date Feb 7, 2012
- Vishay General Semiconductor, LLC
- Lung-Ching Kao
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Low forward voltage drop transient voltage suppressor and method of...
- Patent number 8,014,117
- Issue date Sep 6, 2011
- Vishay General Semiconductor, LLC
- Lung-Ching Kao
Information Patent Grant
High breakdown voltage diode and method of forming same
- Patent number 7,755,102
- Issue date Jul 13, 2010
- Vishay General Semiconductor LLC
- Lung-Ching Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor wafer suitable for forming a semiconductor junction d...
- Patent number 7,560,355
- Issue date Jul 14, 2009
- Vishay General Semiconductor LLC
- Lung-Ching Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MOS device and termination structure
- Patent number 6,396,090
- Issue date May 28, 2002
- Industrial Technology Research Institute
- Chih-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming trench MOS device and termination structure
- Patent number 6,309,929
- Issue date Oct 30, 2001
- Industrial Technology Research Institute and Genetal Semiconductor of Taiwan,...
- Chih-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TRENCH MOS DEVICE HAVING A TERMINATION STRUCTURE WITH MULTIPLE FIEL...
- Publication number 20150200250
- Publication date Jul 16, 2015
- Vishay General Semiconductor LLC
- Yi-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor wafer suitable for forming a semiconductor junction d...
- Publication number 20080096360
- Publication date Apr 24, 2008
- Lung-Ching Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High breakdown voltage diode and method of forming same
- Publication number 20080079020
- Publication date Apr 3, 2008
- Lung-Ching Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low forward voltage drop transient voltage suppressor and method of...
- Publication number 20080013240
- Publication date Jan 17, 2008
- VISHAY GENERAL SEMICONDUCTOR, LLC
- Lung-Ching Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Asymmetric bidirectional transient voltage suppressor and method of...
- Publication number 20060216913
- Publication date Sep 28, 2006
- Pu-ju Kung
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Trench MOS device having a termination structure with multiple fiel...

Low forward voltage drop transient voltage suppressor and method of...

Low forward voltage drop transient voltage suppressor and method of...

High breakdown voltage diode and method of forming same

Semiconductor wafer suitable for forming a semiconductor junction d...

Trench MOS device and termination structure

Method of forming trench MOS device and termination structure

Patents Applicationslast 30 patents

TRENCH MOS DEVICE HAVING A TERMINATION STRUCTURE WITH MULTIPLE FIEL...

Semiconductor wafer suitable for forming a semiconductor junction d...

High breakdown voltage diode and method of forming same

Low forward voltage drop transient voltage suppressor and method of...

Asymmetric bidirectional transient voltage suppressor and method of...