Qiang Rui

Person

Jiangsu, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Vertical semiconductor structure with integrated sampling structure...
- Patent number 12,046,664
- Issue date Jul 23, 2024
- WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.
- Pengfei Jia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-stop reverse conducting insulated gate bipolar transistor and...
- Patent number 10,096,699
- Issue date Oct 9, 2018
- CSMC Technologies FAB1 Co., Ltd.
- Shuo Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method for reverse conducting insulated gate bipolar...
- Patent number 9,673,193
- Issue date Jun 6, 2017
- CSMC Technologies FAB1 Co., Ltd.
- Shuo Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reverse conduction insulated gate bipolar transistor (IGBT) manufac...
- Patent number 9,666,682
- Issue date May 30, 2017
- CSMC Technologies FAB1 Co., Ltd.
- Wanli Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT manufacturing method
- Patent number 9,620,615
- Issue date Apr 11, 2017
- CSMC Technologies FAB1 Co., Ltd.
- Xiaoshe Deng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for removing polysilicon protection layer on a back face of...
- Patent number 9,607,851
- Issue date Mar 28, 2017
- CMSC TECHNOLOGIES FAB1 CO., LTD.
- Qiang Rui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT with built-in diode and manufacturing method therefor
- Patent number 9,595,520
- Issue date Mar 14, 2017
- CSMC Technologies Fab1 Co., Ltd.
- Xiaoshe Deng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-stop reverse conducting insulated gate bipolar transistor and...
- Patent number 9,443,926
- Issue date Sep 13, 2016
- CSMC Technologies FAB1 Co., Ltd.
- Shuo Zhang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
VERTICAL SEMICONDUCTOR STRUCTURE WITH INTEGRATED SAMPLING STRUCTURE...
- Publication number 20240088273
- Publication date Mar 14, 2024
- Wuxi China Resources Huajing Microelectronics Co., Ltd
- PENGFEI JIA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD FOR REVERSE CONDUCTING INSULATED GATE BIPOLAR...
- Publication number 20160379974
- Publication date Dec 29, 2016
- CSMC Technologies FAB1 Co., Ltd.
- Shuo ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT MANUFACTURING METHOD
- Publication number 20160380071
- Publication date Dec 29, 2016
- CSMC TECHNOLOGIES FAB1 CO., LTD.
- Xiaoshe DENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REVERSE CONDUCTION INSULATED GATE BIPOLAR TRANSISTOR (IGBT) MANUFAC...
- Publication number 20160372571
- Publication date Dec 22, 2016
- CSMC TECHNOLOGIES FAB1 CO., LTD.
- Wanli Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-STOP REVERSE CONDUCTING INSULATED GATE BIPOLAR TRANSISTOR AND...
- Publication number 20160240608
- Publication date Aug 18, 2016
- CSMC TECHNOLOGIES FAB1 CO., LTD.
- Shuo Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT WITH BUILT-IN DIODE AND MANUFACTURING METHOD THEREFOR
- Publication number 20160240528
- Publication date Aug 18, 2016
- CSMC TECHNOLOGIES FAB1 CO., LTD.
- Xiaoshe Deng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-STOP REVERSE CONDUCTING INSULATED GATE BIPOLAR TRANSISTOR AND...
- Publication number 20160163841
- Publication date Jun 9, 2016
- CSMC TECHNOLOGIES FAB1 CO., LTD.
- Shuo Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR REMOVING A POLYSILICON PROTECTION LAYER ON A BACK FACE...
- Publication number 20150155182
- Publication date Jun 4, 2015
- CSMC TECHNOLOGIES FAB1 CO., LTD.
- Qiang Rui
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Vertical semiconductor structure with integrated sampling structure...

Field-stop reverse conducting insulated gate bipolar transistor and...

Manufacturing method for reverse conducting insulated gate bipolar...

Reverse conduction insulated gate bipolar transistor (IGBT) manufac...

IGBT manufacturing method

Method for removing polysilicon protection layer on a back face of...

IGBT with built-in diode and manufacturing method therefor

Field-stop reverse conducting insulated gate bipolar transistor and...

Patents Applicationslast 30 patents

VERTICAL SEMICONDUCTOR STRUCTURE WITH INTEGRATED SAMPLING STRUCTURE...

MANUFACTURING METHOD FOR REVERSE CONDUCTING INSULATED GATE BIPOLAR...

IGBT MANUFACTURING METHOD

REVERSE CONDUCTION INSULATED GATE BIPOLAR TRANSISTOR (IGBT) MANUFAC...

FIELD-STOP REVERSE CONDUCTING INSULATED GATE BIPOLAR TRANSISTOR AND...

IGBT WITH BUILT-IN DIODE AND MANUFACTURING METHOD THEREFOR

FIELD-STOP REVERSE CONDUCTING INSULATED GATE BIPOLAR TRANSISTOR AND...

METHOD FOR REMOVING A POLYSILICON PROTECTION LAYER ON A BACK FACE...