Qing-Tang Jiang

Person

Austin, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
In-situ co-deposition of Si in diffusion barrier material depositio...
- Patent number 7,655,555
- Issue date Feb 2, 2010
- Texas Instruments Incorporated
- Richard A. Faust
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a conductive layer including a copper lay...
- Patent number 7,187,080
- Issue date Mar 6, 2007
- Texas Instruments Incorporated
- Qing-Tang Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Copper transition layer for improving copper interconnection reliab...
- Patent number 6,951,812
- Issue date Oct 4, 2005
- Texas Instruments Incorporated
- Qing-Tang Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of manufacturing such semiconduct...
- Patent number 6,911,394
- Issue date Jun 28, 2005
- Texas Instruments Incorporated
- Qing-Tang Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for improved cu electroplating in integrated circuit fabrica...
- Patent number 6,784,104
- Issue date Aug 31, 2004
- Texas Instruments Incorporated
- Qing-Tang Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Copper transition layer for improving copper interconnection reliab...
- Patent number 6,693,356
- Issue date Feb 17, 2004
- Texas Instruments Incorporated
- Qing-Tang Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing copper line resistivity by smoothing trench and via sidewalls
- Patent number 6,586,334
- Issue date Jul 1, 2003
- Texas Instruments Incorporated
- Qing-Tang Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating interlevel connectors using only one photomas...
- Patent number 6,548,400
- Issue date Apr 15, 2003
- Texas Instruments Incorporated
- Kenneth D. Brennan
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor devices and methods of manufacturing such semiconduct...
- Publication number 20050048784
- Publication date Mar 3, 2005
- Qing-Tang Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Copper transition layer for improving copper interconnection reliab...
- Publication number 20040132282
- Publication date Jul 8, 2004
- Qing-Tang Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Copper transition layer for improving copper interconnection reliab...
- Publication number 20030186543
- Publication date Oct 2, 2003
- Qing-Tang Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor devices and methods of manufacturing such semiconduct...
- Publication number 20030160332
- Publication date Aug 28, 2003
- Qing-Tang Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for improved cu electroplating in integrated circuit fabrica...
- Publication number 20030022493
- Publication date Jan 30, 2003
- Qing-Tang Jiang
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
Method of fabricating interlevel connectors using only one photomas...
- Publication number 20030001272
- Publication date Jan 2, 2003
- Kenneth D. Brennan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for sealing via sidewalls in porous low-k dielectric layers
- Publication number 20020177303
- Publication date Nov 28, 2002
- Qing-Tang Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reducing copper line resistivity by smoothing trench and via sidewalls
- Publication number 20020055256
- Publication date May 9, 2002
- Qing-Tang Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal barrier for copper interconnects that incorporates silicon in...
- Publication number 20020009880
- Publication date Jan 24, 2002
- Qing-Tang Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
In-situ co-deposition of Si iN diffusion barrier material depositio...
- Publication number 20020001944
- Publication date Jan 3, 2002
- Richard A. Faust
- H01 - BASIC ELECTRIC ELEMENTS

Qing-Tang Jiang

Person

Patents Grantslast 30 patents

In-situ co-deposition of Si in diffusion barrier material depositio...

Semiconductor device with a conductive layer including a copper lay...

Copper transition layer for improving copper interconnection reliab...

Semiconductor devices and methods of manufacturing such semiconduct...

Method for improved cu electroplating in integrated circuit fabrica...

Copper transition layer for improving copper interconnection reliab...

Reducing copper line resistivity by smoothing trench and via sidewalls

Method of fabricating interlevel connectors using only one photomas...

Patents Applicationslast 30 patents

Semiconductor devices and methods of manufacturing such semiconduct...

Copper transition layer for improving copper interconnection reliab...

Copper transition layer for improving copper interconnection reliab...

Semiconductor devices and methods of manufacturing such semiconduct...

Method for improved cu electroplating in integrated circuit fabrica...

Method of fabricating interlevel connectors using only one photomas...

Method for sealing via sidewalls in porous low-k dielectric layers

Reducing copper line resistivity by smoothing trench and via sidewalls

Metal barrier for copper interconnects that incorporates silicon in...

In-situ co-deposition of Si iN diffusion barrier material depositio...