Qintao Zhang

Person

Gloucester, MA, US

People

Patents Grantslast 30 patents

Information Patent Grant
MOSFET gate shielding using an angled implant
- Patent number 12,183,794
- Issue date Dec 31, 2024
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-temperature implant for buried layer formation
- Patent number 12,087,585
- Issue date Sep 10, 2024
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backside wafer dopant activation
- Patent number 12,046,473
- Issue date Jul 23, 2024
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion implantation to reduce nanosheet gate length variation
- Patent number 11,955,533
- Issue date Apr 9, 2024
- Applied Materials, Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Minority carrier lifetime reduction for SiC IGBT devices
- Patent number 11,948,799
- Issue date Apr 2, 2024
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for BEOL metal to dielectric adhesion
- Patent number 11,942,324
- Issue date Mar 26, 2024
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field effect transistor including integrated antifuse
- Patent number 11,882,695
- Issue date Jan 23, 2024
- Samsung Electronics Co., Ltd.
- Kangguo Cheng
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods for forming N-type buried layer in a substrate by performin...
- Patent number 11,881,405
- Issue date Jan 23, 2024
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques and apparatus for anisotropic stress compensation in sub...
- Patent number 11,875,995
- Issue date Jan 16, 2024
- Applied Materials, Inc.
- Scott Falk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Channeled implants for SiC MOSFET fabrication
- Patent number 11,804,537
- Issue date Oct 31, 2023
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned trench MOSFET
- Patent number 11,798,982
- Issue date Oct 24, 2023
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Localized stressor formation by ion implantation
- Patent number 11,728,383
- Issue date Aug 15, 2023
- Applied Materials, Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Implantation enabled precisely controlled source and drain etch depth
- Patent number 11,721,743
- Issue date Aug 8, 2023
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for hi-precision ion implantation
- Patent number 11,699,570
- Issue date Jul 11, 2023
- Applied Materials, Inc.
- Supakit Charnvanichborikarn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion implantation to form trench-bottom oxide of MOSFET
- Patent number 11,695,060
- Issue date Jul 4, 2023
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backside wafer dopant activation
- Patent number 11,694,897
- Issue date Jul 4, 2023
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technique for reducing gate induced drain leakage in DRAM cells
- Patent number 11,610,972
- Issue date Mar 21, 2023
- Applied Materials, Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion implantation to form step-oxide trench MOSFET
- Patent number 11,538,925
- Issue date Dec 27, 2022
- Applied Materials, Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion implantation to control formation of MOSFET trench-bottom oxide
- Patent number 11,527,637
- Issue date Dec 13, 2022
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for increasing photoresist etch selectivity to enable high e...
- Patent number 11,527,412
- Issue date Dec 13, 2022
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming stress memorization layer on backside of semicond...
- Patent number 11,444,153
- Issue date Sep 13, 2022
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split-gate MOSFET with gate shield
- Patent number 11,437,488
- Issue date Sep 6, 2022
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion implantation to reduce nanosheet gate length variation
- Patent number 11,430,877
- Issue date Aug 30, 2022
- Applied Materials, Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Angled ion implant to reduce MOSFET trench sidewall roughness
- Patent number 11,424,125
- Issue date Aug 23, 2022
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inductor with ferromagnetic cores
- Patent number 11,398,347
- Issue date Jul 26, 2022
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming planar metal-oxide-semiconductor field-effect t...
- Patent number 11,387,338
- Issue date Jul 12, 2022
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques and apparatus for anisotropic stress compensation in sub...
- Patent number 11,201,057
- Issue date Dec 14, 2021
- Applied Materials, Inc.
- Scott Falk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field effect transistor including integrated antifuse
- Patent number 11,139,307
- Issue date Oct 5, 2021
- Samsung Electronics Co., Ltd.
- Kangguo Cheng
- G11 - INFORMATION STORAGE
Information Patent Grant
Techniques for reducing tip to tip shorting and critical dimension...
- Patent number 11,114,299
- Issue date Sep 7, 2021
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method for inductor with ferromagnetic cores
- Patent number 11,037,725
- Issue date Jun 15, 2021
- International Business Machines Corporation
- Kangguo Cheng
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC

Patents Applicationslast 30 patents

Information Patent Application
SELECTIVE WAVEGUIDE ION IMPLANTATION TO ADJUST LOCAL REFRACTIVE IND...
- Publication number 20240411085
- Publication date Dec 12, 2024
- Applied Materials, Inc.
- Qintao ZHANG
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
IMPLANT SCHEME TO IMPROVE HIGH ELECTRON MOBILITY TRANSISTOR CONTACT...
- Publication number 20240405079
- Publication date Dec 5, 2024
- Applied Materials, Inc.
- Qintao ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRAM Transistor Including Buried Bitline
- Publication number 20240292599
- Publication date Aug 29, 2024
- Applied Materials, Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
4F2 DRAM Including Buried Bitline
- Publication number 20240268095
- Publication date Aug 8, 2024
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SURFACE ROUGHNESS REDUCTION FOR PHOTONICS USING HIGH-TEMPERATURE IM...
- Publication number 20240255700
- Publication date Aug 1, 2024
- Applied Materials, Inc.
- Eric Jay Simmons
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRAM Transistor Including Pillars Formed Using Low-Temperature Ion...
- Publication number 20240251546
- Publication date Jul 25, 2024
- Applied Materials, Inc.
- Sipeng Gu
Information Patent Application
Selective Implantation into STI of ETSOI Device
- Publication number 20240194518
- Publication date Jun 13, 2024
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRAM TRANSISTOR INCLUDING HORIZONAL BODY CONTACT
- Publication number 20240188279
- Publication date Jun 6, 2024
- Applied Materials, Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical FinFet Formation Using Directional Deposition
- Publication number 20240172419
- Publication date May 23, 2024
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING HIGHLY UNIFORM DIELECTRIC FILM
- Publication number 20240145217
- Publication date May 2, 2024
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENDPOINT OPTIMIZATION FOR SEMICONDUCTOR PROCESSES
- Publication number 20240128131
- Publication date Apr 18, 2024
- Applied Materials, Inc.
- Avishay Vaxman
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
BOTTOM CONTACT FORMATION FOR 4F2 VERTICAL DRAM
- Publication number 20240121937
- Publication date Apr 11, 2024
- Applied Materials, Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC MOSFET Including Trench with Rounded Corners
- Publication number 20240079236
- Publication date Mar 7, 2024
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FDSOI DEVICE INCLUDING SELF-ALIGNED DIFFUSION BREAK
- Publication number 20240072059
- Publication date Feb 29, 2024
- Applied Materials, Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Etch Rate Modulation of FinFET Through High-Temperature Ion Implant...
- Publication number 20230369050
- Publication date Nov 16, 2023
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ION IMPLANTATION TO CONTROL BURIED CHANNEL RECESS DEPTH
- Publication number 20230253208
- Publication date Aug 10, 2023
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ION IMPLANTATION TO INCREASE MOSFET THRESHOLD VOLTAGE
- Publication number 20230178373
- Publication date Jun 8, 2023
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MINORITY CARRIER LIFETIME REDUCTION FOR SIC IGBT DEVICES
- Publication number 20230090954
- Publication date Mar 23, 2023
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET Gate Shielding Using an Angled Implant
- Publication number 20230040358
- Publication date Feb 9, 2023
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE WAFER DOPANT ACTIVATION
- Publication number 20220415656
- Publication date Dec 29, 2022
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW-TEMPERATURE IMPLANT FOR BURIED LAYER FORMATION
- Publication number 20220415657
- Publication date Dec 29, 2022
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE WAFER DOPANT ACTIVATION
- Publication number 20220406604
- Publication date Dec 22, 2022
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Channeled Implants For SiC MOSFET Fabrication
- Publication number 20220359710
- Publication date Nov 10, 2022
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ION IMPLANTATION TO REDUCE NANOSHEET GATE LENGTH VARIATION
- Publication number 20220359723
- Publication date Nov 10, 2022
- Applied Materials, Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUE FOR REDUCING GATE INDUCED DRAIN LEAKAGE IN DRAM CELLS
- Publication number 20220359670
- Publication date Nov 10, 2022
- Applied Materials, Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED TRENCH MOSFET
- Publication number 20220344453
- Publication date Oct 27, 2022
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ION IMPLANTATION TO CONTROL FORMATION OF MOSFET TRENCH-BOTTOM OXIDE
- Publication number 20220278221
- Publication date Sep 1, 2022
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING PLANAR METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT T...
- Publication number 20220238674
- Publication date Jul 28, 2022
- Qintao ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANGLED ION IMPLANT TO REDUCE MOSFET TRENCH SIDEWALL ROUGHNESS
- Publication number 20220223416
- Publication date Jul 14, 2022
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ION IMPLANTATION TO FORM TRENCH-BOTTOM OXIDE OF MOSFET
- Publication number 20220199806
- Publication date Jun 23, 2022
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS

Qintao Zhang

Person

Patents Grantslast 30 patents

MOSFET gate shielding using an angled implant

Low-temperature implant for buried layer formation

Backside wafer dopant activation

Ion implantation to reduce nanosheet gate length variation

Minority carrier lifetime reduction for SiC IGBT devices

Method for BEOL metal to dielectric adhesion

Vertical field effect transistor including integrated antifuse

Methods for forming N-type buried layer in a substrate by performin...

Techniques and apparatus for anisotropic stress compensation in sub...

Channeled implants for SiC MOSFET fabrication

Self-aligned trench MOSFET

Localized stressor formation by ion implantation

Implantation enabled precisely controlled source and drain etch depth

System and method for hi-precision ion implantation

Ion implantation to form trench-bottom oxide of MOSFET

Backside wafer dopant activation

Technique for reducing gate induced drain leakage in DRAM cells

Ion implantation to form step-oxide trench MOSFET

Ion implantation to control formation of MOSFET trench-bottom oxide

Method for increasing photoresist etch selectivity to enable high e...

Method of forming stress memorization layer on backside of semicond...

Split-gate MOSFET with gate shield

Ion implantation to reduce nanosheet gate length variation

Angled ion implant to reduce MOSFET trench sidewall roughness

Inductor with ferromagnetic cores

Methods for forming planar metal-oxide-semiconductor field-effect t...

Techniques and apparatus for anisotropic stress compensation in sub...

Vertical field effect transistor including integrated antifuse

Techniques for reducing tip to tip shorting and critical dimension...

Manufacturing method for inductor with ferromagnetic cores

Patents Applicationslast 30 patents

SELECTIVE WAVEGUIDE ION IMPLANTATION TO ADJUST LOCAL REFRACTIVE IND...

IMPLANT SCHEME TO IMPROVE HIGH ELECTRON MOBILITY TRANSISTOR CONTACT...

DRAM Transistor Including Buried Bitline

4F2 DRAM Including Buried Bitline

SURFACE ROUGHNESS REDUCTION FOR PHOTONICS USING HIGH-TEMPERATURE IM...

DRAM Transistor Including Pillars Formed Using Low-Temperature Ion...

Selective Implantation into STI of ETSOI Device

DRAM TRANSISTOR INCLUDING HORIZONAL BODY CONTACT

Vertical FinFet Formation Using Directional Deposition

METHOD FOR FORMING HIGHLY UNIFORM DIELECTRIC FILM

ENDPOINT OPTIMIZATION FOR SEMICONDUCTOR PROCESSES

BOTTOM CONTACT FORMATION FOR 4F2 VERTICAL DRAM

SiC MOSFET Including Trench with Rounded Corners

FDSOI DEVICE INCLUDING SELF-ALIGNED DIFFUSION BREAK

Etch Rate Modulation of FinFET Through High-Temperature Ion Implant...

ION IMPLANTATION TO CONTROL BURIED CHANNEL RECESS DEPTH

ION IMPLANTATION TO INCREASE MOSFET THRESHOLD VOLTAGE

MINORITY CARRIER LIFETIME REDUCTION FOR SIC IGBT DEVICES

MOSFET Gate Shielding Using an Angled Implant

BACKSIDE WAFER DOPANT ACTIVATION

LOW-TEMPERATURE IMPLANT FOR BURIED LAYER FORMATION

BACKSIDE WAFER DOPANT ACTIVATION

Channeled Implants For SiC MOSFET Fabrication

ION IMPLANTATION TO REDUCE NANOSHEET GATE LENGTH VARIATION

TECHNIQUE FOR REDUCING GATE INDUCED DRAIN LEAKAGE IN DRAM CELLS

SELF-ALIGNED TRENCH MOSFET

ION IMPLANTATION TO CONTROL FORMATION OF MOSFET TRENCH-BOTTOM OXIDE

METHODS FOR FORMING PLANAR METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT T...

ANGLED ION IMPLANT TO REDUCE MOSFET TRENCH SIDEWALL ROUGHNESS

ION IMPLANTATION TO FORM TRENCH-BOTTOM OXIDE OF MOSFET