Qufei Chen

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Transistor structure with improved unclamped inductive switching im...
- Patent number 10,181,523
- Issue date Jan 15, 2019
- Vishay-Siliconix
- Wenjie Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET active area and edge termination area charge balance
- Patent number 10,084,037
- Issue date Sep 25, 2018
- Vishay Siliconix
- Qufei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with trench-like feed-throughs
- Patent number 10,032,901
- Issue date Jul 24, 2018
- Vishay-Siliconix
- Deva Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra-low drain-source resistance power MOSFET
- Patent number 9,887,266
- Issue date Feb 6, 2018
- Vishay Siliconix
- The-Tu Chau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Breakdown voltage blocking device
- Patent number 9,722,041
- Issue date Aug 1, 2017
- Vishay Siliconix
- Robert Q. Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structure with improved unclamped inductive switching im...
- Patent number 9,716,166
- Issue date Jul 25, 2017
- Vishay Siliconix
- Wenjie Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET active area and edge termination area charge balance
- Patent number 9,484,451
- Issue date Nov 1, 2016
- Vishay Siliconix
- Qufei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super junction trench power MOSFET device fabrication
- Patent number 9,443,974
- Issue date Sep 13, 2016
- Vishay Siliconix
- Yang Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super-high density trench MOSFET
- Patent number 9,431,530
- Issue date Aug 30, 2016
- Vishay Siliconix
- Robert Q. Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench polysilicon diode
- Patent number 9,431,550
- Issue date Aug 30, 2016
- Vishay Siliconix
- Qufei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structure with improved unclamped inductive switching im...
- Patent number 9,425,304
- Issue date Aug 23, 2016
- Vishay Siliconix
- Wenjie Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super junction trench power MOSFET devices
- Patent number 9,425,306
- Issue date Aug 23, 2016
- Vishay Siliconix
- Yang Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with trench-like feed-throughs
- Patent number 9,306,056
- Issue date Apr 5, 2016
- Vishay Siliconix
- Deva Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra-low drain-source resistance power MOSFET
- Patent number 8,409,954
- Issue date Apr 2, 2013
- Vishay-Silconix
- The-Tu Chau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench polysilicon diode
- Patent number 8,072,013
- Issue date Dec 6, 2011
- Vishay Siliconix
- Qufei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Termination for trench MIS device
- Patent number 7,795,675
- Issue date Sep 14, 2010
- Siliconix Incorporated
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench polysilicon diode
- Patent number 7,612,431
- Issue date Nov 3, 2009
- Vishay Siliconix
- Qufei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench polysilicon diode
- Patent number 7,544,545
- Issue date Jun 9, 2009
- Vishay Siliconix
- Qufei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Termination for trench MIS device having implanted drain-drift region
- Patent number 7,268,032
- Issue date Sep 11, 2007
- Siliconix Incorporated
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Termination for trench MIS device having implanted drain-drift region
- Patent number 7,045,857
- Issue date May 16, 2006
- Siliconix Incorporated
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TRANSISTOR STRUCTURE WITH IMPROVED UNCLAMPED INDUCTIVE SWITCHING IM...
- Publication number 20180212048
- Publication date Jul 26, 2018
- VISHAY-SILICONIX
- Wenjie Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET ACTIVE AREA AND EDGE TERMINATION AREA CHARGE BALANCE
- Publication number 20170117354
- Publication date Apr 27, 2017
- Qufei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH TRENCH-LIKE FEED-THROUGHS
- Publication number 20170025527
- Publication date Jan 26, 2017
- Deva Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURE WITH IMPROVED UNCLAMPED INDUCTIVE SWITCHING IM...
- Publication number 20160218196
- Publication date Jul 28, 2016
- VISHAY-SILICONIX
- Wenjie Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURE WITH IMPROVED UNCLAMPED INDUCTIVE SWITCHING IM...
- Publication number 20160056276
- Publication date Feb 25, 2016
- VISHAY-SILICONIX
- Wenjie Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BREAKDOWN VOLTAGE BLOCKING DEVICE
- Publication number 20140077287
- Publication date Mar 20, 2014
- VISHAY-SILICONIX
- Robert Q. Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A HYBRID SPLIT GATE SIMICONDUCTOR
- Publication number 20120220092
- Publication date Aug 30, 2012
- VISHAY-SILICONIX
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID SPLIT GATE SEMICONDUCTOR
- Publication number 20120211828
- Publication date Aug 23, 2012
- VISHAY-SILICONIX
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH POLYSILICON DIODE
- Publication number 20120068178
- Publication date Mar 22, 2012
- VISHAY-SILICONIX
- Qufei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH TRENCH-LIKE FEED-THROUGHS
- Publication number 20110101525
- Publication date May 5, 2011
- VISHAY-SILICONIX
- Deva Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER-HIGH DENSITY TRENCH MOSFET
- Publication number 20110089486
- Publication date Apr 21, 2011
- VISHAY-SILICONIX
- Robert Q. Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER JUNCTION TRENCH POWER MOSFET DEVICES
- Publication number 20110049614
- Publication date Mar 3, 2011
- VISHAY-SILICONIX
- Yang Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER JUNCTION TRENCH POWER MOSFET DEVICE FABRICATION
- Publication number 20110053326
- Publication date Mar 3, 2011
- VISHAY-SILICONIX
- Yang Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET ACTIVE AREA AND EDGE TERMINATION AREA CHARGE BALANCE
- Publication number 20090090967
- Publication date Apr 9, 2009
- VISHAY-SILICONIX
- Qufei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ultra-low drain-source resistance power MOSFET
- Publication number 20080157281
- Publication date Jul 3, 2008
- The-Tu Chau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench polysilicon diode
- Publication number 20080135872
- Publication date Jun 12, 2008
- VISHAY-SILICONIX
- Qufei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ultra-low drain-source resistance power MOSFET
- Publication number 20070221989
- Publication date Sep 27, 2007
- The-Tu Chau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench polysilicon diode
- Publication number 20070145411
- Publication date Jun 28, 2007
- Qufei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Termination for trench MIS device having implanted drain-drift region
- Publication number 20060019448
- Publication date Jan 26, 2006
- Siliconix Incorporated
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Termination for trench MIS device having implanted drain-drift region
- Publication number 20060011976
- Publication date Jan 19, 2006
- Siliconix Incorporated
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Termination for trench MIS device having implanted drain-drift region
- Publication number 20050215011
- Publication date Sep 29, 2005
- Siliconix Incorporated
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Transistor structure with improved unclamped inductive switching im...

MOSFET active area and edge termination area charge balance

Semiconductor device with trench-like feed-throughs

Ultra-low drain-source resistance power MOSFET

Breakdown voltage blocking device

Transistor structure with improved unclamped inductive switching im...

MOSFET active area and edge termination area charge balance

Super junction trench power MOSFET device fabrication

Super-high density trench MOSFET

Trench polysilicon diode

Transistor structure with improved unclamped inductive switching im...

Super junction trench power MOSFET devices

Semiconductor device with trench-like feed-throughs

Ultra-low drain-source resistance power MOSFET

Trench polysilicon diode

Termination for trench MIS device

Trench polysilicon diode

Trench polysilicon diode

Termination for trench MIS device having implanted drain-drift region

Termination for trench MIS device having implanted drain-drift region

Patents Applicationslast 30 patents

TRANSISTOR STRUCTURE WITH IMPROVED UNCLAMPED INDUCTIVE SWITCHING IM...

MOSFET ACTIVE AREA AND EDGE TERMINATION AREA CHARGE BALANCE

SEMICONDUCTOR DEVICE WITH TRENCH-LIKE FEED-THROUGHS

TRANSISTOR STRUCTURE WITH IMPROVED UNCLAMPED INDUCTIVE SWITCHING IM...

TRANSISTOR STRUCTURE WITH IMPROVED UNCLAMPED INDUCTIVE SWITCHING IM...

BREAKDOWN VOLTAGE BLOCKING DEVICE

METHOD OF FORMING A HYBRID SPLIT GATE SIMICONDUCTOR

HYBRID SPLIT GATE SEMICONDUCTOR

TRENCH POLYSILICON DIODE

SEMICONDUCTOR DEVICE WITH TRENCH-LIKE FEED-THROUGHS

SUPER-HIGH DENSITY TRENCH MOSFET

SUPER JUNCTION TRENCH POWER MOSFET DEVICES

SUPER JUNCTION TRENCH POWER MOSFET DEVICE FABRICATION

MOSFET ACTIVE AREA AND EDGE TERMINATION AREA CHARGE BALANCE

Ultra-low drain-source resistance power MOSFET

Trench polysilicon diode

Ultra-low drain-source resistance power MOSFET

Trench polysilicon diode

Termination for trench MIS device having implanted drain-drift region

Termination for trench MIS device having implanted drain-drift region

Termination for trench MIS device having implanted drain-drift region