Radu Barsan

Person

Saratoga, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Device fabrication with planar bragg gratings suppressing parasitic...
- Patent number 8,358,889
- Issue date Jan 22, 2013
- Redfern Integrated Optics
- Radu Barsan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Field leakage by using a thin layer of nitride deposited by chemica...
- Patent number 6,211,022
- Issue date Apr 3, 2001
- Advanced Micro Devices, Inc.
- Jonathan Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Annealing of silicon oxynitride and silicon nitride films to elimin...
- Patent number 6,071,784
- Issue date Jun 6, 2000
- Advanced Micro Devices, Inc.
- Sunil D. Mehta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Data retention of EEPROM cell with shallow trench isolation using t...
- Patent number 6,064,105
- Issue date May 16, 2000
- Vantis Corporation
- Xiao-Yu Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Decoder circuit with short channel depletion transistors
- Patent number 5,959,336
- Issue date Sep 28, 1999
- Advanced Micro Devices, Inc.
- Radu M. Barsan
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated circuit having, and process providing, different oxide l...
- Patent number 5,942,780
- Issue date Aug 24, 1999
- Advanced Micro Devices, Inc.
- Radu M. Barsan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Use of borophosphorous tetraethyl orthosilicate (BPTEOS) to improve...
- Patent number 5,908,308
- Issue date Jun 1, 1999
- Advanced Micro Devices, Inc.
- Radu Barsan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Data retention of EEPROM cell with shallow trench isolation using t...
- Patent number 5,854,114
- Issue date Dec 29, 1998
- Advanced Micro Devices, Inc.
- Xiao-Yu Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of charging and discharging floating gage transistors to red...
- Patent number 5,841,701
- Issue date Nov 24, 1998
- Advanced Micro Devices, Inc.
- Xiao-Yu Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Simplified masking process for programmable logic device manufacture
- Patent number 5,830,795
- Issue date Nov 3, 1998
- Advanced Micro Devices, Inc.
- Sunil D. Mehta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
V.sub.pp only scalable EEPROM memory cell having transistors with t...
- Patent number 5,761,116
- Issue date Jun 2, 1998
- Advanced Micro Devices, Inc.
- Xiao-Yu Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for screening non-volatile memory and programmable logic dev...
- Patent number 5,700,698
- Issue date Dec 23, 1997
- Advanced Micro Devices, Inc.
- Radu Barsan
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of forming multiple gate oxide thicknesses on a wafer substrate
- Patent number 5,672,521
- Issue date Sep 30, 1997
- Advanced Micro Devices, Inc.
- Radu M. Barsan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS memory cell with tunneling during program and erase through th...
- Patent number 5,646,901
- Issue date Jul 8, 1997
- Advanced Micro Devices, Inc.
- Bradley A. Sharpe-Geisler
- G11 - INFORMATION STORAGE
Information Patent Grant
Control gate-addressed CMOS non-volatile cell that programs through...
- Patent number 5,615,150
- Issue date Mar 25, 1997
- Advanced Micro Devices, Inc.
- Jonathan Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Completely complementary MOS memory cell with tunneling through the...
- Patent number 5,594,687
- Issue date Jan 14, 1997
- Advanced Micro Devices, Inc.
- Jonathan Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
CMOS EEPROM cell with tunneling window in the read path
- Patent number 5,587,945
- Issue date Dec 24, 1996
- Advanced Micro Devices, Inc.
- Jonathan Lin
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
DEVICE FABRICATION WITH PLANAR BRAGG GRATINGS SUPPRESSING PARASITIC...
- Publication number 20100303411
- Publication date Dec 2, 2010
- Redfern Integrated Optics, Inc.
- Radu Barsan
- G02 - OPTICS
Information Patent Application
IMPROVING FIELD LEAKAGE BY USING A THIN LAYER OF NITRIDE DEPOSITED...
- Publication number 20020000626
- Publication date Jan 3, 2002
- Advanced Micro Devices, Inc.
- JONATHAN LIN
- H01 - BASIC ELECTRIC ELEMENTS

Radu Barsan

Person

Patents Grantslast 30 patents

Device fabrication with planar bragg gratings suppressing parasitic...

Field leakage by using a thin layer of nitride deposited by chemica...

Annealing of silicon oxynitride and silicon nitride films to elimin...

Data retention of EEPROM cell with shallow trench isolation using t...

Decoder circuit with short channel depletion transistors

Integrated circuit having, and process providing, different oxide l...

Use of borophosphorous tetraethyl orthosilicate (BPTEOS) to improve...

Data retention of EEPROM cell with shallow trench isolation using t...

Method of charging and discharging floating gage transistors to red...

Simplified masking process for programmable logic device manufacture

V.sub.pp only scalable EEPROM memory cell having transistors with t...

Method for screening non-volatile memory and programmable logic dev...

Method of forming multiple gate oxide thicknesses on a wafer substrate

CMOS memory cell with tunneling during program and erase through th...

Control gate-addressed CMOS non-volatile cell that programs through...

Completely complementary MOS memory cell with tunneling through the...

CMOS EEPROM cell with tunneling window in the read path

Patents Applicationslast 30 patents

DEVICE FABRICATION WITH PLANAR BRAGG GRATINGS SUPPRESSING PARASITIC...

IMPROVING FIELD LEAKAGE BY USING A THIN LAYER OF NITRIDE DEPOSITED...