Raghavasimhan Sreenivasan

Person

Schenectady, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Modified fin cut after epitaxial growth
- Patent number 10,475,886
- Issue date Nov 12, 2019
- International Business Machines Corporation
- Sivananda K. Kanakasabapathy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the semiconductor...
- Patent number 9,812,556
- Issue date Nov 7, 2017
- Renesas Electronics Corporation
- Shogo Mochizuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET spacer without substrate gouging or spacer foot
- Patent number 9,793,379
- Issue date Oct 17, 2017
- International Business Machines Corporation
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including embedded crystalline back-gate bias...
- Patent number 9,728,649
- Issue date Aug 8, 2017
- GLOBALFOUNDRIES Inc.
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of preventing epitaxy creeping under the spacer
- Patent number 9,704,993
- Issue date Jul 11, 2017
- International Business Machines Corporation
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement metal gate including dielectric gate material
- Patent number 9,653,573
- Issue date May 16, 2017
- International Business Machines Corporation
- Linus Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method to reduce crystal defects in epitaxial fin mer...
- Patent number 9,496,282
- Issue date Nov 15, 2016
- International Business Machines Corporation
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method to reduce crystal defects in epitaxial fin mer...
- Patent number 9,472,576
- Issue date Oct 18, 2016
- International Business Machines Corporation
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrically controlled optical fuse and method of fabrication
- Patent number 9,417,501
- Issue date Aug 16, 2016
- GLOBALFOUNDRIES Inc.
- Kangguo Cheng
- G02 - OPTICS
Information Patent Grant
MIM capacitor with enhanced capacitance formed by selective epitaxy
- Patent number 9,391,069
- Issue date Jul 12, 2016
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET semiconductor device having increased gate height control
- Patent number 9,379,135
- Issue date Jun 28, 2016
- GLOBALFOUNDRIES Inc.
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced external resistance finFET device
- Patent number 9,368,343
- Issue date Jun 14, 2016
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxially grown quantum well finFETs for enhanced pFET performance
- Patent number 9,331,073
- Issue date May 3, 2016
- International Business Machines Corporation
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned gate contact structure
- Patent number 9,324,709
- Issue date Apr 26, 2016
- GLOBALFOUNDRIES Inc.
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of preventing epitaxy creeping under the spacer
- Patent number 9,318,582
- Issue date Apr 19, 2016
- International Business Machines Corporation
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method to reduce crystal defects in epitaxial fin mer...
- Patent number 9,312,273
- Issue date Apr 12, 2016
- International Business Machines Corporation
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Locally isolated protected bulk FinFET semiconductor device
- Patent number 9,299,617
- Issue date Mar 29, 2016
- GLOBALFOUNDRIES Inc.
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a semiconductor device including embedded cry...
- Patent number 9,281,198
- Issue date Mar 8, 2016
- GLOBALFOUNDRIES, INC.
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for robust finFET replacement metal gate integ...
- Patent number 9,269,792
- Issue date Feb 23, 2016
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with crystalline insulator
- Patent number 9,257,536
- Issue date Feb 9, 2016
- GLOBALFOUNDRIES Inc.
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual epitaxy region integration
- Patent number 9,224,607
- Issue date Dec 29, 2015
- GLOBALFOUNDRIES Inc.
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method to modulate threshold voltage for high-K metal...
- Patent number 9,214,397
- Issue date Dec 15, 2015
- GLOBALFOUNDRIES Inc.
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Prevention of fin erosion for semiconductor devices
- Patent number 9,190,487
- Issue date Nov 17, 2015
- GLOBALFOUNDRIES Inc.
- Ali Khakifirooz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self aligned contact with improved robustness
- Patent number 9,105,606
- Issue date Aug 11, 2015
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with silicon germanium stressor and method of forming
- Patent number 9,105,663
- Issue date Aug 11, 2015
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor fabrication method using stop layer
- Patent number 9,087,796
- Issue date Jul 21, 2015
- International Business Machines Corporation
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET semiconductor device having increased gate height control
- Patent number 9,059,242
- Issue date Jun 16, 2015
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned contacts for replacement metal gate transistors
- Patent number 9,059,253
- Issue date Jun 16, 2015
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method to modulate threshold voltage for high-K metal...
- Patent number 9,041,116
- Issue date May 26, 2015
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self aligned contact with improved robustness
- Patent number 9,034,703
- Issue date May 19, 2015
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF PREVENTING EPITAXY CREEPING UNDER THE SPACER
- Publication number 20160233337
- Publication date Aug 11, 2016
- International Business Machines Corporation
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCED EXTERNAL RESISTANCE FINFET DEVICE
- Publication number 20160196973
- Publication date Jul 7, 2016
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MODIFIED FIN CUT AFTER EPITAXIAL GROWTH
- Publication number 20160172380
- Publication date Jun 16, 2016
- International Business Machines Corporation
- Sivananda K. Kanakasabapathy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT METAL GATE INCLUDING DIELECTRIC GATE MATERIAL
- Publication number 20160172467
- Publication date Jun 16, 2016
- International Business Machines Corporation
- Linus Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MODIFIED FIN CUT AFTER EPITAXIAL GROWTH
- Publication number 20160172379
- Publication date Jun 16, 2016
- International Business Machines Corporation
- Sivananda K. Kanakasabapathy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET SPACER WITHOUT SUBSTRATE GOUGING OR SPACER FOOT
- Publication number 20160172460
- Publication date Jun 16, 2016
- International Business Machines Corporation
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING EMBEDDED CRYSTALLINE BACK-GATE BIAS...
- Publication number 20160163879
- Publication date Jun 9, 2016
- GLOBALFOUNDRIES INC.
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIALLY GROWN QUANTUM WELL FINFETS FOR ENHANCED PFET PERFORMANCE
- Publication number 20160093613
- Publication date Mar 31, 2016
- International Business Machines Corporation
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIALLY GROWN QUANTUM WELL FINFETS FOR ENHANCED PFET PERFORMANCE
- Publication number 20160093697
- Publication date Mar 31, 2016
- International Business Machines Corporation
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR ROBUST FINFET REPLACEMENT METAL GATE INTEG...
- Publication number 20150357440
- Publication date Dec 10, 2015
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT METAL GATE INCLUDING DIELECTRIC GATE MATERIAL
- Publication number 20150357434
- Publication date Dec 10, 2015
- International Business Machines Corporation
- Linus Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD TO REDUCE CRYSTAL DEFECTS IN EPITAXIAL FIN MER...
- Publication number 20150348995
- Publication date Dec 3, 2015
- International Business Machines Corporation
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET SEMICONDUCTOR DEVICE HAVING INCREASED GATE HEIGHT CONTROL
- Publication number 20150263046
- Publication date Sep 17, 2015
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PREVENTING EPITAXY CREEPING UNDER THE SPACER
- Publication number 20150263128
- Publication date Sep 17, 2015
- International Business Machines Corporation
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIAMOND SHAPED EPITAXY
- Publication number 20150228761
- Publication date Aug 13, 2015
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH SILICON GERMANIUM STRESSOR AND METHOD OF FORMING
- Publication number 20150214338
- Publication date Jul 30, 2015
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT METAL GATE INCLUDING DIELECTRIC GATE MATERIAL
- Publication number 20150214331
- Publication date Jul 30, 2015
- GLOBALFOUNDRIES INC.
- Linus Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD TO REDUCE CRYSTAL DEFECTS IN EPITAXIAL FIN MER...
- Publication number 20150155307
- Publication date Jun 4, 2015
- International Business Machines Corporation
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD TO REDUCE CRYSTAL DEFECTS IN EPITAXIAL FIN MER...
- Publication number 20150155306
- Publication date Jun 4, 2015
- INTERNATIONAL BUSINESS MACHINES CORPPORATION
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOCALLY ISOLATED PROTECTED BULK FINFET SEMICONDUCTOR DEVICE
- Publication number 20150147868
- Publication date May 28, 2015
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL EPITAXY REGION INTEGRATION
- Publication number 20150076608
- Publication date Mar 19, 2015
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRICALLY CONTROLLED OPTICAL FUSE AND METHOD OF FABRICATION
- Publication number 20150064817
- Publication date Mar 5, 2015
- International Business Machines Corporation
- Kangguo Cheng
- G02 - OPTICS
Information Patent Application
SELF-ALIGNED GATE CONTACT STRUCTURE
- Publication number 20150048455
- Publication date Feb 19, 2015
- International Business Machines Corporation
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF ALIGNED CONTACT WITH IMPROVED ROBUSTNESS
- Publication number 20150041868
- Publication date Feb 12, 2015
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING EMBEDDED CRYSTALLINE BACK-GATE BIAS...
- Publication number 20140346573
- Publication date Nov 27, 2014
- International Business Machines Corporation
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED CONTACTS FOR REPLACEMENT METAL GATE TRANSISTORS
- Publication number 20140327058
- Publication date Nov 6, 2014
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH CRYSTALLINE INSULATOR
- Publication number 20140312425
- Publication date Oct 23, 2014
- Interantional Business Machines Corporation
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACK-GATED SUBSTRATE AND SEMICONDUCTOR DEVICE, AND RELATED METHOD O...
- Publication number 20140273418
- Publication date Sep 18, 2014
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-aligned Contacts For Replacement Metal Gate Transistors
- Publication number 20140252427
- Publication date Sep 11, 2014
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PREVENTION OF FIN EROSION FOR SEMICONDUCTOR DEVICES
- Publication number 20140256106
- Publication date Sep 11, 2014
- GLOBALFOUNDRIES INC.
- Ali Khakifirooz
- H01 - BASIC ELECTRIC ELEMENTS

Raghavasimhan Sreenivasan

Person

Patents Grantslast 30 patents

Modified fin cut after epitaxial growth

Semiconductor device and method of manufacturing the semiconductor...

FinFET spacer without substrate gouging or spacer foot

Semiconductor device including embedded crystalline back-gate bias...

Method of preventing epitaxy creeping under the spacer

Replacement metal gate including dielectric gate material

Structure and method to reduce crystal defects in epitaxial fin mer...

Structure and method to reduce crystal defects in epitaxial fin mer...

Electrically controlled optical fuse and method of fabrication

MIM capacitor with enhanced capacitance formed by selective epitaxy

FinFET semiconductor device having increased gate height control

Reduced external resistance finFET device

Epitaxially grown quantum well finFETs for enhanced pFET performance

Self-aligned gate contact structure

Method of preventing epitaxy creeping under the spacer

Structure and method to reduce crystal defects in epitaxial fin mer...

Locally isolated protected bulk FinFET semiconductor device

Method of fabricating a semiconductor device including embedded cry...

Method and structure for robust finFET replacement metal gate integ...

FinFET with crystalline insulator

Dual epitaxy region integration

Structure and method to modulate threshold voltage for high-K metal...

Prevention of fin erosion for semiconductor devices

Self aligned contact with improved robustness

FinFET with silicon germanium stressor and method of forming

Semiconductor fabrication method using stop layer

FinFET semiconductor device having increased gate height control

Self-aligned contacts for replacement metal gate transistors

Structure and method to modulate threshold voltage for high-K metal...

Self aligned contact with improved robustness

Patents Applicationslast 30 patents

METHOD OF PREVENTING EPITAXY CREEPING UNDER THE SPACER

REDUCED EXTERNAL RESISTANCE FINFET DEVICE

MODIFIED FIN CUT AFTER EPITAXIAL GROWTH

REPLACEMENT METAL GATE INCLUDING DIELECTRIC GATE MATERIAL

MODIFIED FIN CUT AFTER EPITAXIAL GROWTH

FINFET SPACER WITHOUT SUBSTRATE GOUGING OR SPACER FOOT

SEMICONDUCTOR DEVICE INCLUDING EMBEDDED CRYSTALLINE BACK-GATE BIAS...

EPITAXIALLY GROWN QUANTUM WELL FINFETS FOR ENHANCED PFET PERFORMANCE

EPITAXIALLY GROWN QUANTUM WELL FINFETS FOR ENHANCED PFET PERFORMANCE

METHOD AND STRUCTURE FOR ROBUST FINFET REPLACEMENT METAL GATE INTEG...

REPLACEMENT METAL GATE INCLUDING DIELECTRIC GATE MATERIAL

STRUCTURE AND METHOD TO REDUCE CRYSTAL DEFECTS IN EPITAXIAL FIN MER...

FINFET SEMICONDUCTOR DEVICE HAVING INCREASED GATE HEIGHT CONTROL

METHOD OF PREVENTING EPITAXY CREEPING UNDER THE SPACER

DIAMOND SHAPED EPITAXY

FINFET WITH SILICON GERMANIUM STRESSOR AND METHOD OF FORMING

REPLACEMENT METAL GATE INCLUDING DIELECTRIC GATE MATERIAL

STRUCTURE AND METHOD TO REDUCE CRYSTAL DEFECTS IN EPITAXIAL FIN MER...

STRUCTURE AND METHOD TO REDUCE CRYSTAL DEFECTS IN EPITAXIAL FIN MER...

LOCALLY ISOLATED PROTECTED BULK FINFET SEMICONDUCTOR DEVICE

DUAL EPITAXY REGION INTEGRATION

ELECTRICALLY CONTROLLED OPTICAL FUSE AND METHOD OF FABRICATION

SELF-ALIGNED GATE CONTACT STRUCTURE

SELF ALIGNED CONTACT WITH IMPROVED ROBUSTNESS

SEMICONDUCTOR DEVICE INCLUDING EMBEDDED CRYSTALLINE BACK-GATE BIAS...

SELF-ALIGNED CONTACTS FOR REPLACEMENT METAL GATE TRANSISTORS

FINFET WITH CRYSTALLINE INSULATOR

BACK-GATED SUBSTRATE AND SEMICONDUCTOR DEVICE, AND RELATED METHOD O...

Self-aligned Contacts For Replacement Metal Gate Transistors

PREVENTION OF FIN EROSION FOR SEMICONDUCTOR DEVICES