Rahul RAMASWAMY

Person

Hillsboro, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Integration of Si-based transistors with non-Si technologies by sem...
- Patent number 12,148,757
- Issue date Nov 19, 2024
- Intel Corporation
- Nidhi Nidhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated fuse in self-aligned gate endcap for FinFET architecture...
- Patent number 12,108,595
- Issue date Oct 1, 2024
- Intel Corporation
- Sumit Ashtekar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned front-end charge trap flash memory cell and capacitor...
- Patent number 12,089,411
- Issue date Sep 10, 2024
- Intel Corporation
- Tanuj Trivedi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage extended-drain MOS (EDMOS) nanowire transistors
- Patent number 12,040,395
- Issue date Jul 16, 2024
- Intel Corporation
- Nidhi Nidhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-N transistor arrangements for reducing nonlinearity of off-stat...
- Patent number 12,027,613
- Issue date Jul 2, 2024
- Intel Corporation
- Nidhi Nidhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ESD diode solution for nanoribbon architectures
- Patent number 11,996,403
- Issue date May 28, 2024
- Intel Corporation
- Nidhi Nidhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superlattice FINFET with tunable drive current capability
- Patent number 11,881,511
- Issue date Jan 23, 2024
- Intel Corporation
- Nidhi Nidhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having dual nanoribbo...
- Patent number 11,862,703
- Issue date Jan 2, 2024
- Intel Corporation
- Tanuj Trivedi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-N transistors with contacts of modified widths
- Patent number 11,848,362
- Issue date Dec 19, 2023
- Intel Corporation
- Rahul Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single gated 3D nanowire inverter for high density thick gate SOC a...
- Patent number 11,791,380
- Issue date Oct 17, 2023
- Intel Corporation
- Rahul Ramaswamy
- B82 - NANO-TECHNOLOGY
Information Patent Grant
E-D mode 2DEG FET with gate spacer to locally tune VT and improve b...
- Patent number 11,757,027
- Issue date Sep 12, 2023
- Intel Corporation
- Rahul Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge-induced threshold voltage tuning in III-N transistors
- Patent number 11,715,790
- Issue date Aug 1, 2023
- Intel Corporation
- Nidhi Nidhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor gate structure with hybrid stacks of dielectric material
- Patent number 11,688,788
- Issue date Jun 27, 2023
- Intel Corporation
- Johann C. Rode
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-N transistors with local stressors for threshold voltage control
- Patent number 11,670,709
- Issue date Jun 6, 2023
- Intel Corporation
- Sansaptak Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with ion- or fixed charge-based field plate structures
- Patent number 11,658,217
- Issue date May 23, 2023
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-N transistors integrated with thin-film transistors having grad...
- Patent number 11,652,143
- Issue date May 16, 2023
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Antenna gate field plate on 2DEG planar FET
- Patent number 11,626,513
- Issue date Apr 11, 2023
- Intel Corporation
- Rahul Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cap layer on a polarization layer to preserve channel sheet resistance
- Patent number 11,610,971
- Issue date Mar 21, 2023
- Intel Corporation
- Sansaptak Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planar transistors with wrap-around gates and wrap-around source an...
- Patent number 11,588,037
- Issue date Feb 21, 2023
- Intel Corporation
- Nidhi Nidhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of passive components in III-N devices
- Patent number 11,587,924
- Issue date Feb 21, 2023
- Intel Corporation
- Nidhi Nidhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having depopulated ch...
- Patent number 11,581,404
- Issue date Feb 14, 2023
- Intel Corporation
- Tanuj Trivedi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of III-N transistors and non-III-N transistors by semic...
- Patent number 11,581,313
- Issue date Feb 14, 2023
- Intel Corporation
- Sansaptak Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement-depletion cascode arrangements for enhancement mode III...
- Patent number 11,527,532
- Issue date Dec 13, 2022
- Intel Corporation
- Nidhi Nidhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with backside field plate structures
- Patent number 11,502,191
- Issue date Nov 15, 2022
- Intel Corporation
- Johann Christian Rode
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transmission line structures for III-N devices
- Patent number 11,450,617
- Issue date Sep 20, 2022
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having dual nanoribbo...
- Patent number 11,437,483
- Issue date Sep 6, 2022
- Intel Corporation
- Tanuj Trivedi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-N tunnel device architectures and high frequency mixers employi...
- Patent number 11,387,328
- Issue date Jul 12, 2022
- Intel Corporation
- Rahul Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi voltage threshold transistors through process and design-indu...
- Patent number 11,121,040
- Issue date Sep 14, 2021
- Intel Corporation
- Chen-Guan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having depopulated ch...
- Patent number 11,094,782
- Issue date Aug 17, 2021
- Intel Corporation
- Tanuj Trivedi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid finfet structure with bulk source/drain regions
- Patent number 11,075,286
- Issue date Jul 27, 2021
- Intel Corporation
- Chia-Hong Jan
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DUAL NANORIBBO...
- Publication number 20240088253
- Publication date Mar 14, 2024
- Intel Corporation
- Tanuj TRIVEDI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE GATED 3D NANOWIRE INVERTER FOR HIGH DENSITY THICK GATE SOC A...
- Publication number 20230420501
- Publication date Dec 28, 2023
- Intel Corporation
- Rahul RAMASWAMY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III-NITRIDE SEMICONDUCTOR ARRAY WITH HETEROGENEOUS ELECTRODES...
- Publication number 20230102318
- Publication date Mar 30, 2023
- Intel Corporation
- Rahul Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DUAL NANORIBBO...
- Publication number 20220359697
- Publication date Nov 10, 2022
- Intel Corporation
- Tanuj TRIVEDI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-N TRANSISTORS WITH INTEGRATED LINEARIZATION DEVICES
- Publication number 20220068910
- Publication date Mar 3, 2022
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED FUSE IN SELF-ALIGNED GATE ENDCAP FOR FINFET ARCHITECTURE...
- Publication number 20220059552
- Publication date Feb 24, 2022
- Intel Corporation
- Sumit Ashtekar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED FRONT-END CHARGE TRAP FLASH MEMORY CELL AND CAPACITOR...
- Publication number 20210399002
- Publication date Dec 23, 2021
- Intel Corporation
- Tanuj TRIVEDI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DUAL NANORIBBO...
- Publication number 20210280683
- Publication date Sep 9, 2021
- Intel Corporation
- Tanuj TRIVEDI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DEPOPULATED CH...
- Publication number 20210257453
- Publication date Aug 19, 2021
- Intel Corporation
- Tanuj TRIVEDI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DEPOPULATED CH...
- Publication number 20210257452
- Publication date Aug 19, 2021
- Intel Corporation
- Tanuj TRIVEDI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAIN BASED PERFORMANCE ENHANCEMENT USING SELECTIVE METAL OXIDATIO...
- Publication number 20210193844
- Publication date Jun 24, 2021
- Intel Corporation
- Rahul RAMASWAMY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ESD DIODE SOLUTION FOR NANORIBBON ARCHITECTURES
- Publication number 20210183850
- Publication date Jun 17, 2021
- Intel Corporation
- Nidhi NIDHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE GATED 3D NANOWIRE INVERTER FOR HIGH DENSITY THICK GATE SOC A...
- Publication number 20210184000
- Publication date Jun 17, 2021
- Intel Corporation
- Rahul RAMASWAMY
- B82 - NANO-TECHNOLOGY
Information Patent Application
HIGH VOLTAGE EXTENDED-DRAIN MOS (EDMOS) NANOWIRE TRANSISTORS
- Publication number 20210184032
- Publication date Jun 17, 2021
- Intel Corporation
- Nidhi NIDHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANORIBBON THICK GATE DEVICES WITH DIFFERENTIAL RIBBON SPACING AND...
- Publication number 20210184001
- Publication date Jun 17, 2021
- Intel Corporation
- Tanuj TRIVEDI
- B82 - NANO-TECHNOLOGY
Information Patent Application
HIGH VOLTAGE ULTRA-LOW POWER THICK GATE NANORIBBON TRANSISTORS FOR...
- Publication number 20210184045
- Publication date Jun 17, 2021
- Intel Corporation
- Rahul RAMASWAMY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CO-INTEGRATED HIGH PERFORMANCE NANORIBBON TRANSISTORS WITH HIGH VOL...
- Publication number 20210184051
- Publication date Jun 17, 2021
- Intel Corporation
- Tanuj TRIVEDI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANORIBBON THICK GATE DEVICE WITH HYBRID DIELECTRIC TUNING FOR HIGH...
- Publication number 20210183857
- Publication date Jun 17, 2021
- Intel Corporation
- Walid M. HAFEZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CO-INTEGRATION OF EXTENDED-DRAIN AND SELF-ALIGNED III-N TRANSISTORS...
- Publication number 20200395358
- Publication date Dec 17, 2020
- Intel Corporation
- Marko Radosavljevic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCEMENT-DEPLETION CASCODE ARRANGEMENTS FOR ENHANCEMENT MODE III...
- Publication number 20200373297
- Publication date Nov 26, 2020
- Intel Corporation
- Nidhi Nidhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-N TRANSISTOR ARRANGEMENTS FOR REDUCING NONLINEARITY OF OFF-STAT...
- Publication number 20200373421
- Publication date Nov 26, 2020
- Intel Corporation
- Nidhi Nidhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHARGE-INDUCED THRESHOLD VOLTAGE TUNING IN III-N TRANSISTORS
- Publication number 20200335590
- Publication date Oct 22, 2020
- Intel Corporation
- Nidhi Nidhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integration of Si-based transistors with non-Si technologies by sem...
- Publication number 20200335526
- Publication date Oct 22, 2020
- Intel Corporation
- Nidhi Nidhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHEMES FOR REDUCING OFF-STATE CAPACITANCE IN III-N TRANSISTOR ARRA...
- Publication number 20200335592
- Publication date Oct 22, 2020
- Intel Corporation
- Rahul Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-N TRANSISTORS INTEGRATED WITH THIN-FILM TRANSISTORS HAVING GRAD...
- Publication number 20200312961
- Publication date Oct 1, 2020
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION OF PASSIVE COMPONENTS IN III-N DEVICES
- Publication number 20200303371
- Publication date Sep 24, 2020
- Intel Corporation
- Nidhi Nidhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-N transistors with local stressors for threshold voltage control
- Publication number 20200295172
- Publication date Sep 17, 2020
- Intel Corporation
- Sansaptak Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transmission line structures for III-N devices
- Publication number 20200294932
- Publication date Sep 17, 2020
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLANAR TRANSISTORS WITH WRAP-AROUND GATES AND WRAP-AROUND SOURCE AN...
- Publication number 20200279932
- Publication date Sep 3, 2020
- Intel Corporation
- Nidhi Nidhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION OF III-N TRANSISTORS AND NON-III-N TRANSISTORS BY SEMIC...
- Publication number 20200273860
- Publication date Aug 27, 2020
- Intel Corporation
- Sansaptak Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS

Rahul RAMASWAMY

Person

Patents Grantslast 30 patents

Integration of Si-based transistors with non-Si technologies by sem...

Integrated fuse in self-aligned gate endcap for FinFET architecture...

Self-aligned front-end charge trap flash memory cell and capacitor...

High voltage extended-drain MOS (EDMOS) nanowire transistors

III-N transistor arrangements for reducing nonlinearity of off-stat...

ESD diode solution for nanoribbon architectures

Superlattice FINFET with tunable drive current capability

Gate-all-around integrated circuit structures having dual nanoribbo...

III-N transistors with contacts of modified widths

Single gated 3D nanowire inverter for high density thick gate SOC a...

E-D mode 2DEG FET with gate spacer to locally tune VT and improve b...

Charge-induced threshold voltage tuning in III-N transistors

Transistor gate structure with hybrid stacks of dielectric material

III-N transistors with local stressors for threshold voltage control

Transistors with ion- or fixed charge-based field plate structures

III-N transistors integrated with thin-film transistors having grad...

Antenna gate field plate on 2DEG planar FET

Cap layer on a polarization layer to preserve channel sheet resistance

Planar transistors with wrap-around gates and wrap-around source an...

Integration of passive components in III-N devices

Gate-all-around integrated circuit structures having depopulated ch...

Integration of III-N transistors and non-III-N transistors by semic...

Enhancement-depletion cascode arrangements for enhancement mode III...

Transistors with backside field plate structures

Transmission line structures for III-N devices

Gate-all-around integrated circuit structures having dual nanoribbo...

III-N tunnel device architectures and high frequency mixers employi...

Multi voltage threshold transistors through process and design-indu...

Gate-all-around integrated circuit structures having depopulated ch...

Hybrid finfet structure with bulk source/drain regions

Patents Applicationslast 30 patents

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DUAL NANORIBBO...

SINGLE GATED 3D NANOWIRE INVERTER FOR HIGH DENSITY THICK GATE SOC A...

GROUP III-NITRIDE SEMICONDUCTOR ARRAY WITH HETEROGENEOUS ELECTRODES...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DUAL NANORIBBO...

III-N TRANSISTORS WITH INTEGRATED LINEARIZATION DEVICES

INTEGRATED FUSE IN SELF-ALIGNED GATE ENDCAP FOR FINFET ARCHITECTURE...

SELF-ALIGNED FRONT-END CHARGE TRAP FLASH MEMORY CELL AND CAPACITOR...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DUAL NANORIBBO...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DEPOPULATED CH...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DEPOPULATED CH...

STRAIN BASED PERFORMANCE ENHANCEMENT USING SELECTIVE METAL OXIDATIO...

ESD DIODE SOLUTION FOR NANORIBBON ARCHITECTURES

SINGLE GATED 3D NANOWIRE INVERTER FOR HIGH DENSITY THICK GATE SOC A...

HIGH VOLTAGE EXTENDED-DRAIN MOS (EDMOS) NANOWIRE TRANSISTORS

NANORIBBON THICK GATE DEVICES WITH DIFFERENTIAL RIBBON SPACING AND...

HIGH VOLTAGE ULTRA-LOW POWER THICK GATE NANORIBBON TRANSISTORS FOR...

CO-INTEGRATED HIGH PERFORMANCE NANORIBBON TRANSISTORS WITH HIGH VOL...

NANORIBBON THICK GATE DEVICE WITH HYBRID DIELECTRIC TUNING FOR HIGH...

CO-INTEGRATION OF EXTENDED-DRAIN AND SELF-ALIGNED III-N TRANSISTORS...

ENHANCEMENT-DEPLETION CASCODE ARRANGEMENTS FOR ENHANCEMENT MODE III...

III-N TRANSISTOR ARRANGEMENTS FOR REDUCING NONLINEARITY OF OFF-STAT...

CHARGE-INDUCED THRESHOLD VOLTAGE TUNING IN III-N TRANSISTORS

Integration of Si-based transistors with non-Si technologies by sem...

SCHEMES FOR REDUCING OFF-STATE CAPACITANCE IN III-N TRANSISTOR ARRA...

III-N TRANSISTORS INTEGRATED WITH THIN-FILM TRANSISTORS HAVING GRAD...

INTEGRATION OF PASSIVE COMPONENTS IN III-N DEVICES

III-N transistors with local stressors for threshold voltage control

Transmission line structures for III-N devices

PLANAR TRANSISTORS WITH WRAP-AROUND GATES AND WRAP-AROUND SOURCE AN...

INTEGRATION OF III-N TRANSISTORS AND NON-III-N TRANSISTORS BY SEMIC...