Rajendran Krishnasamy

Person

Essex Junction, VT, US

People

Patents Grantslast 30 patents

Information Patent Grant
Gate tunnel current-triggered semiconductor controlled rectifier
- Patent number 12,356,644
- Issue date Jul 8, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Anupam Dutta
Information Patent Grant
Photodiode with insulator layer along intrinsic region sidewall
- Patent number 12,349,500
- Issue date Jul 1, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Rajendran Krishnasamy
Information Patent Grant
Electrostatic discharge device with pinch resistor
- Patent number 12,324,248
- Issue date Jun 3, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Anindya Nath
Information Patent Grant
Photodiodes
- Patent number 12,310,124
- Issue date May 20, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Rajendran Krishnasamy
Information Patent Grant
Semiconductor device integration with an amorphous region
- Patent number 12,293,994
- Issue date May 6, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Vvss Satyasuresh Choppalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor with stepped emitter
- Patent number 12,278,269
- Issue date Apr 15, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Uppili S. Raghunathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor with amorphous semiconductor regions
- Patent number 12,237,407
- Issue date Feb 25, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Anupam Dutta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistors having a gate electrode positioned inside...
- Patent number 12,230,673
- Issue date Feb 18, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Michel Abou-Khalil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure with diode over lateral bipolar transi...
- Patent number 12,205,943
- Issue date Jan 21, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Anindya Nath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure with resistive semiconductor material...
- Patent number 12,191,300
- Issue date Jan 7, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Robert J. Gauthier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage MOSFET device with improved breakdown voltage
- Patent number 12,170,329
- Issue date Dec 17, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Anupam Dutta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor with buried trap rich isolation r...
- Patent number 12,170,313
- Issue date Dec 17, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage device with linearizing field plate configuration
- Patent number 12,166,476
- Issue date Dec 10, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Santosh Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure including multi-level field plate and method of forming t...
- Patent number 12,154,956
- Issue date Nov 26, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Johnatan Avraham Kantarovsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Unlanded thermal dissipation pillar adjacent active contact
- Patent number 11,972,999
- Issue date Apr 30, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Mark D. Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Photodetector with dual doped semiconductor material
- Patent number 11,949,034
- Issue date Apr 2, 2024
- GLOBALFOUNDRIES U.S. Inc.
- John J. Ellis-Monaghan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical bipolar junction transistor and method
- Patent number 11,869,941
- Issue date Jan 9, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Sarah A. McTaggart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Photodetectors with substrate extensions adjacent photodiodes
- Patent number 11,777,043
- Issue date Oct 3, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Ramsey M. Hazbun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor with buried trap rich isolation r...
- Patent number 11,721,719
- Issue date Aug 8, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Photodiode with integrated, self-aligned light focusing element
- Patent number 11,664,470
- Issue date May 30, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Rajendran Krishnasamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Symmetric arrangement of field plates in semiconductor devices
- Patent number 11,616,127
- Issue date Mar 28, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Johnatan Avraham Kantarovsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistors with a polycrystalline body in a shallow t...
- Patent number 11,437,522
- Issue date Sep 6, 2022
- GLOBALFOUNDRIES U.S. INC.
- Michel J. Abou-Khalil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Photodiode with integrated, light focusing element
- Patent number 11,424,377
- Issue date Aug 23, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Rajendran Krishnasamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pixel arrays including heterogenous photodiode types
- Patent number 11,374,040
- Issue date Jun 28, 2022
- GLOBALFOUNDRIES U.S. INC.
- John J. Ellis-Monaghan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Avalanche photodiode
- Patent number 11,322,639
- Issue date May 3, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Mark D. Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Symmetric arrangement of field plates in semiconductor devices
- Patent number 11,316,019
- Issue date Apr 26, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Johnatan Avraham Kantarovsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistors with one or more sealed airgap
- Patent number 11,127,816
- Issue date Sep 21, 2021
- GLOBALFOUNDRIES U.S. INC.
- Siva P. Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon germanium heterojunction bipolar transistor structure and m...
- Patent number 10,032,883
- Issue date Jul 24, 2018
- Ultratech, Inc.
- Oleg Gluschenkov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon germanium heterojunction bipolar transistor structure and m...
- Patent number 9,450,069
- Issue date Sep 20, 2016
- Ultratech, Inc.
- Oleg Gluschenkov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon germanium (SiGe) heterojunction bipolar transistor (HBT)
- Patent number 8,853,043
- Issue date Oct 7, 2014
- International Business Machines Corporation
- Wade J. Hodge
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SILICON CONTROL RECTIFIERS
- Publication number 20250234653
- Publication date Jul 17, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Vvss Satyasuresh Choppalli
Information Patent Application
DEVICE TRIGGERED SILICON CONTROL RECTIFIER
- Publication number 20250220940
- Publication date Jul 3, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Sagar Premnath KARALKAR
Information Patent Application
TRANSISTOR TRIGGERED SILICON CONTROL RECTIFIER
- Publication number 20250221055
- Publication date Jul 3, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Sagar Premnath KARALKAR
Information Patent Application
SILICON CONTROLLED RECTIFIER INTEGRATED HETEROJUNCTION BIPOLAR TRAN...
- Publication number 20250185265
- Publication date Jun 5, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Anindya Nath
Information Patent Application
SILICON CONTROL RECTIFIER INTEGRATED WITH A TRANSISTOR
- Publication number 20250159999
- Publication date May 15, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Anindya Nath
Information Patent Application
DEVICE WITH ISOLATION STRUCTURES
- Publication number 20250140599
- Publication date May 1, 2025
- GlobalFoundries U.S. INC.
- Jacob M. DeAngelis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH THERMAL PLUG
- Publication number 20250072024
- Publication date Feb 27, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Alvin J. Joseph
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTOR WITH BURIED TRAP RICH ISOLATION R...
- Publication number 20250015128
- Publication date Jan 9, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor JAIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CONTROLLED RECTIFIERS
- Publication number 20240347528
- Publication date Oct 17, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Anindya NATH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH PERFORMANCE SILICON CONTROLLED RECTIFIER DEVICES
- Publication number 20240304612
- Publication date Sep 12, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Shesh Mani PANDEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE IN POROUS SEMICONDUCTOR REGION AND MET...
- Publication number 20240290776
- Publication date Aug 29, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Anindya Nath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE WITH WORKFUNCTION METAL IN DRIFT REGION
- Publication number 20240282853
- Publication date Aug 22, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Shesh Mani PANDEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH PERFORMANCE SILICON CONTROLLED RECTIFIER DEVICES
- Publication number 20240282847
- Publication date Aug 22, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Shesh Mani PANDEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH DEVICE INCLUDING AT LEAST ONE IN-WELL...
- Publication number 20240282852
- Publication date Aug 22, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Shesh Mani Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE TUNNEL CURRENT-TRIGGERED SEMICONDUCTOR CONTROLLED RECTIFIER
- Publication number 20240266422
- Publication date Aug 8, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Anupam Dutta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING POROUS SEMICONDUCTOR MATERIAL ADJACE...
- Publication number 20240250120
- Publication date Jul 25, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Shesh Mani PANDEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH A PRIMARY GATE WRAPPING A FLOATING SECONDARY GATE
- Publication number 20240234533
- Publication date Jul 11, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Santosh Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE INCLUDING N-TYPE WELL OVER N-TYPE DEEP WELL AND BETWEEN P...
- Publication number 20240234409
- Publication date Jul 11, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Sagar Premnath Karalkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATES OF SEMICONDUCTOR DEVICES FOR HEAT DISSIPATION
- Publication number 20240222224
- Publication date Jul 4, 2024
- GLOBALFOUNDRIES U.S. Inc.
- SIVA P. ADUSUMILLI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTROSTATIC DISCHARGE PROTECTION DEVICES
- Publication number 20240213240
- Publication date Jun 27, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Sagar Premnath Karalkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE DEVICE WITH LINEARIZING FIELD PLATE CONFIGURATION
- Publication number 20240204764
- Publication date Jun 20, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Santosh Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHOTODIODE WITH INSULATOR LAYER ALONG INTRINSIC REGION SIDEWALL
- Publication number 20240186429
- Publication date Jun 6, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Rajendran Krishnasamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-ELECTRON-MOBILITY TRANSISTOR
- Publication number 20240178310
- Publication date May 30, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Santosh SHARMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IC STRUCTURE WITH GATE ELECTRODE FULLY WITHIN V-SHAPED CAVITY
- Publication number 20240178290
- Publication date May 30, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Megan Lydon-Nuhfer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH METAL FIELD PLATE CONTACT
- Publication number 20240162345
- Publication date May 16, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Shesh M. PANDEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
E-FUSE WITH METAL FILL
- Publication number 20240162146
- Publication date May 16, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Shesh M. PANDEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTOR WITH AMORPHOUS SEMICONDUCTOR REGIONS
- Publication number 20240145585
- Publication date May 2, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Anupam DUTTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR-ON-INSULATOR FIELD-EFFECT TRANSISTORS INCLUDING STRES...
- Publication number 20240105503
- Publication date Mar 28, 2024
- GLOBALFOUNDRIES U.S. Inc.
- SHESH MANI PANDEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INTEGRATION WITH AN AMORPHOUS REGION
- Publication number 20240105683
- Publication date Mar 28, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Vvss Satyasuresh Choppalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURES ISOLATED BY POROUS SEMICONDUCTOR MA...
- Publication number 20240088157
- Publication date Mar 14, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Michel Abou-Khalil
- H01 - BASIC ELECTRIC ELEMENTS

Rajendran Krishnasamy

Person

Patents Grantslast 30 patents

Gate tunnel current-triggered semiconductor controlled rectifier

Photodiode with insulator layer along intrinsic region sidewall

Electrostatic discharge device with pinch resistor

Photodiodes

Semiconductor device integration with an amorphous region

Bipolar transistor with stepped emitter

Heterojunction bipolar transistor with amorphous semiconductor regions

Field-effect transistors having a gate electrode positioned inside...

Integrated circuit structure with diode over lateral bipolar transi...

Integrated circuit structure with resistive semiconductor material...

High voltage MOSFET device with improved breakdown voltage

Heterojunction bipolar transistor with buried trap rich isolation r...

High voltage device with linearizing field plate configuration

Structure including multi-level field plate and method of forming t...

Unlanded thermal dissipation pillar adjacent active contact

Photodetector with dual doped semiconductor material

Vertical bipolar junction transistor and method

Photodetectors with substrate extensions adjacent photodiodes

Heterojunction bipolar transistor with buried trap rich isolation r...

Photodiode with integrated, self-aligned light focusing element

Symmetric arrangement of field plates in semiconductor devices

Field-effect transistors with a polycrystalline body in a shallow t...

Photodiode with integrated, light focusing element

Pixel arrays including heterogenous photodiode types

Avalanche photodiode

Symmetric arrangement of field plates in semiconductor devices

Heterojunction bipolar transistors with one or more sealed airgap

Silicon germanium heterojunction bipolar transistor structure and m...

Silicon germanium heterojunction bipolar transistor structure and m...

Silicon germanium (SiGe) heterojunction bipolar transistor (HBT)

Patents Applicationslast 30 patents

SILICON CONTROL RECTIFIERS

DEVICE TRIGGERED SILICON CONTROL RECTIFIER

TRANSISTOR TRIGGERED SILICON CONTROL RECTIFIER

SILICON CONTROLLED RECTIFIER INTEGRATED HETEROJUNCTION BIPOLAR TRAN...

SILICON CONTROL RECTIFIER INTEGRATED WITH A TRANSISTOR

DEVICE WITH ISOLATION STRUCTURES

TRANSISTOR WITH THERMAL PLUG

HETEROJUNCTION BIPOLAR TRANSISTOR WITH BURIED TRAP RICH ISOLATION R...

SILICON CONTROLLED RECTIFIERS

HIGH PERFORMANCE SILICON CONTROLLED RECTIFIER DEVICES

INTEGRATED CIRCUIT STRUCTURE IN POROUS SEMICONDUCTOR REGION AND MET...

DEVICE WITH WORKFUNCTION METAL IN DRIFT REGION

HIGH PERFORMANCE SILICON CONTROLLED RECTIFIER DEVICES

SEMICONDUCTOR STRUCTURE WITH DEVICE INCLUDING AT LEAST ONE IN-WELL...

GATE TUNNEL CURRENT-TRIGGERED SEMICONDUCTOR CONTROLLED RECTIFIER

SEMICONDUCTOR DEVICE INCLUDING POROUS SEMICONDUCTOR MATERIAL ADJACE...

TRANSISTOR WITH A PRIMARY GATE WRAPPING A FLOATING SECONDARY GATE

STRUCTURE INCLUDING N-TYPE WELL OVER N-TYPE DEEP WELL AND BETWEEN P...

SUBSTRATES OF SEMICONDUCTOR DEVICES FOR HEAT DISSIPATION

ELECTROSTATIC DISCHARGE PROTECTION DEVICES

HIGH VOLTAGE DEVICE WITH LINEARIZING FIELD PLATE CONFIGURATION

PHOTODIODE WITH INSULATOR LAYER ALONG INTRINSIC REGION SIDEWALL

HIGH-ELECTRON-MOBILITY TRANSISTOR

IC STRUCTURE WITH GATE ELECTRODE FULLY WITHIN V-SHAPED CAVITY

TRANSISTOR WITH METAL FIELD PLATE CONTACT

E-FUSE WITH METAL FILL

HETEROJUNCTION BIPOLAR TRANSISTOR WITH AMORPHOUS SEMICONDUCTOR REGIONS

SEMICONDUCTOR-ON-INSULATOR FIELD-EFFECT TRANSISTORS INCLUDING STRES...

SEMICONDUCTOR DEVICE INTEGRATION WITH AN AMORPHOUS REGION

SEMICONDUCTOR DEVICE STRUCTURES ISOLATED BY POROUS SEMICONDUCTOR MA...