Rajendran Krishnasamy

Person

Essex Junction, VT, US

People

Patents Grantslast 30 patents

Information Patent Grant
Integrated circuit structure with diode over lateral bipolar transi...
- Patent number 12,205,943
- Issue date Jan 21, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Anindya Nath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure with resistive semiconductor material...
- Patent number 12,191,300
- Issue date Jan 7, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Robert J. Gauthier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage MOSFET device with improved breakdown voltage
- Patent number 12,170,329
- Issue date Dec 17, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Anupam Dutta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor with buried trap rich isolation r...
- Patent number 12,170,313
- Issue date Dec 17, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage device with linearizing field plate configuration
- Patent number 12,166,476
- Issue date Dec 10, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Santosh Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure including multi-level field plate and method of forming t...
- Patent number 12,154,956
- Issue date Nov 26, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Johnatan Avraham Kantarovsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Unlanded thermal dissipation pillar adjacent active contact
- Patent number 11,972,999
- Issue date Apr 30, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Mark D. Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Photodetector with dual doped semiconductor material
- Patent number 11,949,034
- Issue date Apr 2, 2024
- GLOBALFOUNDRIES U.S. Inc.
- John J. Ellis-Monaghan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical bipolar junction transistor and method
- Patent number 11,869,941
- Issue date Jan 9, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Sarah A. McTaggart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Photodetectors with substrate extensions adjacent photodiodes
- Patent number 11,777,043
- Issue date Oct 3, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Ramsey M. Hazbun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor with buried trap rich isolation r...
- Patent number 11,721,719
- Issue date Aug 8, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Photodiode with integrated, self-aligned light focusing element
- Patent number 11,664,470
- Issue date May 30, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Rajendran Krishnasamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Symmetric arrangement of field plates in semiconductor devices
- Patent number 11,616,127
- Issue date Mar 28, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Johnatan Avraham Kantarovsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistors with a polycrystalline body in a shallow t...
- Patent number 11,437,522
- Issue date Sep 6, 2022
- GLOBALFOUNDRIES U.S. INC.
- Michel J. Abou-Khalil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Photodiode with integrated, light focusing element
- Patent number 11,424,377
- Issue date Aug 23, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Rajendran Krishnasamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pixel arrays including heterogenous photodiode types
- Patent number 11,374,040
- Issue date Jun 28, 2022
- GLOBALFOUNDRIES U.S. INC.
- John J. Ellis-Monaghan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Avalanche photodiode
- Patent number 11,322,639
- Issue date May 3, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Mark D. Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Symmetric arrangement of field plates in semiconductor devices
- Patent number 11,316,019
- Issue date Apr 26, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Johnatan Avraham Kantarovsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistors with one or more sealed airgap
- Patent number 11,127,816
- Issue date Sep 21, 2021
- GLOBALFOUNDRIES U.S. INC.
- Siva P. Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon germanium heterojunction bipolar transistor structure and m...
- Patent number 10,032,883
- Issue date Jul 24, 2018
- Ultratech, Inc.
- Oleg Gluschenkov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon germanium heterojunction bipolar transistor structure and m...
- Patent number 9,450,069
- Issue date Sep 20, 2016
- Ultratech, Inc.
- Oleg Gluschenkov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon germanium (SiGe) heterojunction bipolar transistor (HBT)
- Patent number 8,853,043
- Issue date Oct 7, 2014
- International Business Machines Corporation
- Wade J. Hodge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon germanium heterojunction bipolar transistor structure and m...
- Patent number 8,455,322
- Issue date Jun 4, 2013
- International Business Machines Corporation
- Oleg Gluschenkov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS pixel sensor cells with poly spacer transfer gates and methods...
- Patent number 8,298,853
- Issue date Oct 30, 2012
- International Business Machines Corporation
- James W. Adkisson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon germanium heterojunction bipolar transistor having intersti...
- Patent number 8,299,500
- Issue date Oct 30, 2012
- International Business Machines Corporation
- Wade J. Hodge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bias-controlled deep trench substrate noise isolation integrated ci...
- Patent number 8,212,332
- Issue date Jul 3, 2012
- International Business Machines Corporation
- Phillip Francis Chapman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS image sensor with reduced dark current
- Patent number 8,105,861
- Issue date Jan 31, 2012
- International Business Machines Corporation
- James W. Adkisson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of manufacture thereof
- Patent number 8,063,449
- Issue date Nov 22, 2011
- Infineon Technologies AG
- Jin-Ping Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating hetero-junction bipolar transistor (HBT)
- Patent number 8,039,351
- Issue date Oct 18, 2011
- International Business Machines Corporation
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bias-controlled deep trench substrate noise isolation integrated ci...
- Patent number 8,021,941
- Issue date Sep 20, 2011
- International Business Machines Corporation
- Phillip Francis Chapman
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTOR WITH BURIED TRAP RICH ISOLATION R...
- Publication number 20250015128
- Publication date Jan 9, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor JAIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CONTROLLED RECTIFIERS
- Publication number 20240347528
- Publication date Oct 17, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Anindya NATH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH PERFORMANCE SILICON CONTROLLED RECTIFIER DEVICES
- Publication number 20240304612
- Publication date Sep 12, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Shesh Mani PANDEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE IN POROUS SEMICONDUCTOR REGION AND MET...
- Publication number 20240290776
- Publication date Aug 29, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Anindya Nath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE WITH WORKFUNCTION METAL IN DRIFT REGION
- Publication number 20240282853
- Publication date Aug 22, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Shesh Mani PANDEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH PERFORMANCE SILICON CONTROLLED RECTIFIER DEVICES
- Publication number 20240282847
- Publication date Aug 22, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Shesh Mani PANDEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH DEVICE INCLUDING AT LEAST ONE IN-WELL...
- Publication number 20240282852
- Publication date Aug 22, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Shesh Mani Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE TUNNEL CURRENT-TRIGGERED SEMICONDUCTOR CONTROLLED RECTIFIER
- Publication number 20240266422
- Publication date Aug 8, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Anupam Dutta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING POROUS SEMICONDUCTOR MATERIAL ADJACE...
- Publication number 20240250120
- Publication date Jul 25, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Shesh Mani PANDEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH A PRIMARY GATE WRAPPING A FLOATING SECONDARY GATE
- Publication number 20240234533
- Publication date Jul 11, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Santosh Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE INCLUDING N-TYPE WELL OVER N-TYPE DEEP WELL AND BETWEEN P...
- Publication number 20240234409
- Publication date Jul 11, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Sagar Premnath Karalkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATES OF SEMICONDUCTOR DEVICES FOR HEAT DISSIPATION
- Publication number 20240222224
- Publication date Jul 4, 2024
- GLOBALFOUNDRIES U.S. Inc.
- SIVA P. ADUSUMILLI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTROSTATIC DISCHARGE PROTECTION DEVICES
- Publication number 20240213240
- Publication date Jun 27, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Sagar Premnath Karalkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE DEVICE WITH LINEARIZING FIELD PLATE CONFIGURATION
- Publication number 20240204764
- Publication date Jun 20, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Santosh Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHOTODIODE WITH INSULATOR LAYER ALONG INTRINSIC REGION SIDEWALL
- Publication number 20240186429
- Publication date Jun 6, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Rajendran Krishnasamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-ELECTRON-MOBILITY TRANSISTOR
- Publication number 20240178310
- Publication date May 30, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Santosh SHARMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IC STRUCTURE WITH GATE ELECTRODE FULLY WITHIN V-SHAPED CAVITY
- Publication number 20240178290
- Publication date May 30, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Megan Lydon-Nuhfer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
E-FUSE WITH METAL FILL
- Publication number 20240162146
- Publication date May 16, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Shesh M. PANDEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH METAL FIELD PLATE CONTACT
- Publication number 20240162345
- Publication date May 16, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Shesh M. PANDEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTOR WITH AMORPHOUS SEMICONDUCTOR REGIONS
- Publication number 20240145585
- Publication date May 2, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Anupam DUTTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR-ON-INSULATOR FIELD-EFFECT TRANSISTORS INCLUDING STRES...
- Publication number 20240105503
- Publication date Mar 28, 2024
- GLOBALFOUNDRIES U.S. Inc.
- SHESH MANI PANDEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INTEGRATION WITH AN AMORPHOUS REGION
- Publication number 20240105683
- Publication date Mar 28, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Vvss Satyasuresh Choppalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURES ISOLATED BY POROUS SEMICONDUCTOR MA...
- Publication number 20240088157
- Publication date Mar 14, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Michel Abou-Khalil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTORS
- Publication number 20240088242
- Publication date Mar 14, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Johnatan A. KANTAROVSKY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRICALLY PROGRAMMABLE FUSE OVER LATERAL BIPOLAR TRANSISTOR
- Publication number 20240074167
- Publication date Feb 29, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Anindya Nath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHOTODETECTORS ON FIN STRUCTURE
- Publication number 20240072184
- Publication date Feb 29, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Ramsey HAZBUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHOTODETECTOR STRUCTURE WITH AIR GAP AND RELATED METHODS
- Publication number 20240063315
- Publication date Feb 22, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Siva P. Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE WITH DIODE OVER LATERAL BIPOLAR TRANSI...
- Publication number 20240063212
- Publication date Feb 22, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Anindya Nath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH PERFORMANCE LATERALLY-DIFFUSED METAL-OXIDE SEMICONDUCTOR STRUC...
- Publication number 20240030341
- Publication date Jan 25, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Shesh Mani PANDEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR WITH STEPPED EMITTER
- Publication number 20240006491
- Publication date Jan 4, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Uppili S. RAGHUNATHAN
- H01 - BASIC ELECTRIC ELEMENTS

Rajendran Krishnasamy

Person

Patents Grantslast 30 patents

Integrated circuit structure with diode over lateral bipolar transi...

Integrated circuit structure with resistive semiconductor material...

High voltage MOSFET device with improved breakdown voltage

Heterojunction bipolar transistor with buried trap rich isolation r...

High voltage device with linearizing field plate configuration

Structure including multi-level field plate and method of forming t...

Unlanded thermal dissipation pillar adjacent active contact

Photodetector with dual doped semiconductor material

Vertical bipolar junction transistor and method

Photodetectors with substrate extensions adjacent photodiodes

Heterojunction bipolar transistor with buried trap rich isolation r...

Photodiode with integrated, self-aligned light focusing element

Symmetric arrangement of field plates in semiconductor devices

Field-effect transistors with a polycrystalline body in a shallow t...

Photodiode with integrated, light focusing element

Pixel arrays including heterogenous photodiode types

Avalanche photodiode

Symmetric arrangement of field plates in semiconductor devices

Heterojunction bipolar transistors with one or more sealed airgap

Silicon germanium heterojunction bipolar transistor structure and m...

Silicon germanium heterojunction bipolar transistor structure and m...

Silicon germanium (SiGe) heterojunction bipolar transistor (HBT)

Silicon germanium heterojunction bipolar transistor structure and m...

CMOS pixel sensor cells with poly spacer transfer gates and methods...

Silicon germanium heterojunction bipolar transistor having intersti...

Bias-controlled deep trench substrate noise isolation integrated ci...

CMOS image sensor with reduced dark current

Semiconductor devices and methods of manufacture thereof

Method of fabricating hetero-junction bipolar transistor (HBT)

Bias-controlled deep trench substrate noise isolation integrated ci...

Patents Applicationslast 30 patents

HETEROJUNCTION BIPOLAR TRANSISTOR WITH BURIED TRAP RICH ISOLATION R...

SILICON CONTROLLED RECTIFIERS

HIGH PERFORMANCE SILICON CONTROLLED RECTIFIER DEVICES

INTEGRATED CIRCUIT STRUCTURE IN POROUS SEMICONDUCTOR REGION AND MET...

DEVICE WITH WORKFUNCTION METAL IN DRIFT REGION

HIGH PERFORMANCE SILICON CONTROLLED RECTIFIER DEVICES

SEMICONDUCTOR STRUCTURE WITH DEVICE INCLUDING AT LEAST ONE IN-WELL...

GATE TUNNEL CURRENT-TRIGGERED SEMICONDUCTOR CONTROLLED RECTIFIER

SEMICONDUCTOR DEVICE INCLUDING POROUS SEMICONDUCTOR MATERIAL ADJACE...

TRANSISTOR WITH A PRIMARY GATE WRAPPING A FLOATING SECONDARY GATE

STRUCTURE INCLUDING N-TYPE WELL OVER N-TYPE DEEP WELL AND BETWEEN P...

SUBSTRATES OF SEMICONDUCTOR DEVICES FOR HEAT DISSIPATION

ELECTROSTATIC DISCHARGE PROTECTION DEVICES

HIGH VOLTAGE DEVICE WITH LINEARIZING FIELD PLATE CONFIGURATION

PHOTODIODE WITH INSULATOR LAYER ALONG INTRINSIC REGION SIDEWALL

HIGH-ELECTRON-MOBILITY TRANSISTOR

IC STRUCTURE WITH GATE ELECTRODE FULLY WITHIN V-SHAPED CAVITY

E-FUSE WITH METAL FILL

TRANSISTOR WITH METAL FIELD PLATE CONTACT

HETEROJUNCTION BIPOLAR TRANSISTOR WITH AMORPHOUS SEMICONDUCTOR REGIONS

SEMICONDUCTOR-ON-INSULATOR FIELD-EFFECT TRANSISTORS INCLUDING STRES...

SEMICONDUCTOR DEVICE INTEGRATION WITH AN AMORPHOUS REGION

SEMICONDUCTOR DEVICE STRUCTURES ISOLATED BY POROUS SEMICONDUCTOR MA...

HIGH ELECTRON MOBILITY TRANSISTORS

ELECTRICALLY PROGRAMMABLE FUSE OVER LATERAL BIPOLAR TRANSISTOR

PHOTODETECTORS ON FIN STRUCTURE

PHOTODETECTOR STRUCTURE WITH AIR GAP AND RELATED METHODS

INTEGRATED CIRCUIT STRUCTURE WITH DIODE OVER LATERAL BIPOLAR TRANSI...

HIGH PERFORMANCE LATERALLY-DIFFUSED METAL-OXIDE SEMICONDUCTOR STRUC...

BIPOLAR TRANSISTOR WITH STEPPED EMITTER