Rajesh Prasad

Person

Lexington, MA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Sequential plasma and thermal treatment
- Patent number 12,142,475
- Issue date Nov 12, 2024
- Applied Materials, Inc.
- Ning Li
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Highly etch selective amorphous carbon film
- Patent number 12,112,949
- Issue date Oct 8, 2024
- Applied Materials, Inc.
- Rajesh Prasad
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Highly etch selective amorphous carbon film
- Patent number 12,014,927
- Issue date Jun 18, 2024
- Applied Materials, Inc.
- Rajesh Prasad
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Techniques for improved low dielectric constant film processing
- Patent number 11,756,796
- Issue date Sep 12, 2023
- Applied Materials, Inc.
- Rajesh Prasad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a 2-dimensional channel material, using ion impla...
- Patent number 11,626,284
- Issue date Apr 11, 2023
- Applied Materials, Inc.
- Keith T. Wong
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
System and technique for profile modulation using high tilt angles
- Patent number 11,551,904
- Issue date Jan 10, 2023
- Applied Materials, Inc.
- Venkataramana R. Chavva
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Highly etch selective amorphous carbon film
- Patent number 11,469,107
- Issue date Oct 11, 2022
- Applied Materials, Inc.
- Rajesh Prasad
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Techniques for reducing tip to tip shorting and critical dimension...
- Patent number 11,114,299
- Issue date Sep 7, 2021
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for forming low stress etch-resistant mask using implant...
- Patent number 10,811,257
- Issue date Oct 20, 2020
- Varian Semiconductor Equipment Associates, Inc.
- Rajesh Prasad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for forming dual epitaxial source/drain semiconductor de...
- Patent number 10,804,156
- Issue date Oct 13, 2020
- Varian Semiconductor Equipment Associates, Inc.
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Highly etch selective amorphous carbon film
- Patent number 10,727,059
- Issue date Jul 28, 2020
- Applied Materials, Inc.
- Sarah Bobek
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Techniques and structure for forming dynamic random-access device u...
- Patent number 10,629,437
- Issue date Apr 21, 2020
- Varian Semiconductor Equipment Associates, Inc.
- Sony Varghese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for forming low stress mask using implantation
- Patent number 10,515,802
- Issue date Dec 24, 2019
- Varian Semiconductor Equipment Associates, Inc.
- Rajesh Prasad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for improved spacer in nanosheet device
- Patent number 10,403,738
- Issue date Sep 3, 2019
- Varian Semiconductor Equipment Associates, Inc.
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for improved removal of sacrificial mask
- Patent number 10,354,875
- Issue date Jul 16, 2019
- Varian Semiconductor Equipment Associates, Inc.
- Rajesh Prasad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etch rate modulation through ion implantation
- Patent number 10,332,748
- Issue date Jun 25, 2019
- Varian Semiconductor Equipment Associates, Inc.
- Rajesh Prasad
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Etch rate modulation through ion implantation
- Patent number 9,934,982
- Issue date Apr 3, 2018
- Varian Semiconductor Equipment Associates, Inc.
- Rajesh Prasad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of doping a polycrystalline transistor channel for vertical...
- Patent number 9,018,064
- Issue date Apr 28, 2015
- Varian Semiconductor Equipment Associates, Inc.
- Andrew M. Waite
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEQUENTIAL PLASMA AND THERMAL TREATMENT
- Publication number 20250037989
- Publication date Jan 30, 2025
- Applied Materials, Inc.
- Ning Li
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
IMPLANT INTO EUV METAL OXIDE PHOTORESIST MODULE TO REDUCE EUV DOSE
- Publication number 20240379376
- Publication date Nov 14, 2024
- Applied Materials, Inc.
- Rajesh Prasad
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
ION IMPLANTATION FOR REDUCED ROUGHNESS OF SILICON NITRIDE
- Publication number 20240332009
- Publication date Oct 3, 2024
- Applied Materials, Inc.
- Qixin Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ION IMPLANTATION FOR INCREASED ADHESION WITH RESIST MATERIAL
- Publication number 20240071773
- Publication date Feb 29, 2024
- Applied Materials, Inc.
- Lei Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING A DOPED HARDMASK
- Publication number 20240021433
- Publication date Jan 18, 2024
- Applied Materials, Inc.
- Scott FALK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Etch Rate Modulation of FinFET Through High-Temperature Ion Implant...
- Publication number 20230369050
- Publication date Nov 16, 2023
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ION IMPLANTATION FOR REDUCED HYDROGEN INCORPORATION IN AMORPHOUS SI...
- Publication number 20230298892
- Publication date Sep 21, 2023
- Applied Materials, Inc.
- Rui Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR OXIDIZING A SILICON HARDMASK USING ION IMPLANT
- Publication number 20230268188
- Publication date Aug 24, 2023
- Applied Materials, Inc.
- Sungho Jo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGHLY ETCH SELECTIVE AMORPHOUS CARBON FILM
- Publication number 20230041963
- Publication date Feb 9, 2023
- Applied Materials, Inc.
- Rajesh PRASAD
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
HIGHLY ETCH SELECTIVE AMORPHOUS CARBON FILM
- Publication number 20230029929
- Publication date Feb 2, 2023
- Applied Materials, Inc.
- Rajesh PRASAD
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
TECHNIQUES FOR IMPROVED LOW DIELECTRIC CONSTANT FILM PROCESSING
- Publication number 20220367205
- Publication date Nov 17, 2022
- Applied Materials, Inc.
- Rajesh Prasad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEQUENTIAL PLASMA AND THERMAL TREATMENT
- Publication number 20220262619
- Publication date Aug 18, 2022
- Applied Materials, Inc.
- Ning Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A 2-DIMENSIONAL CHANNEL MATERIAL USING ION IMPLAN...
- Publication number 20220108886
- Publication date Apr 7, 2022
- Applied Materials, Inc.
- Keith T. Wong
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
System And Technique For Profile Modulation Using High Tilt Angles
- Publication number 20220076915
- Publication date Mar 10, 2022
- Applied Materials, Inc.
- Venkataramana R. Chavva
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUES FOR REDUCING TIP TO TIP SHORTING AND CRITICAL DIMENSION...
- Publication number 20210005445
- Publication date Jan 7, 2021
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGHLY ETCH SELECTIVE AMORPHOUS CARBON FILM
- Publication number 20200357640
- Publication date Nov 12, 2020
- Applied Materials, Inc.
- Rajesh PRASAD
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
TECHNIQUES FOR FORMING DUAL EPITAXIAL SOURCE/DRAIN SEMICONDUCTOR DE...
- Publication number 20190393094
- Publication date Dec 26, 2019
- Varian Semiconductor Equipment Associates, Inc.
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUES AND STRUCTURE FOR FORMING DYNAMIC RANDOM-ACCESS DEVICE U...
- Publication number 20190348287
- Publication date Nov 14, 2019
- Varian Semiconductor Equipment Associates, Inc.
- Sony Varghese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUES FOR FORMING LOW STRESS MASK USING IMPLANTATION
- Publication number 20190326116
- Publication date Oct 24, 2019
- Varian Semiconductor Equipment Associates, Inc.
- Rajesh Prasad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUES FOR FORMING LOW STRESS ETCH-RESISTANT MASK USING IMPLANT...
- Publication number 20190304783
- Publication date Oct 3, 2019
- Varian Semiconductor Equipment Associates, Inc.
- Rajesh Prasad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUES FOR IMPROVED REMOVAL OF SACRIFICIAL MASK
- Publication number 20190214255
- Publication date Jul 11, 2019
- Varian Semiconductor Equipment Associates, Inc.
- Rajesh Prasad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGHLY ETCH SELECTIVE AMORPHOUS CARBON FILM
- Publication number 20190172714
- Publication date Jun 6, 2019
- Applied Materials, Inc.
- Sarah BOBEK
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Etch Rate Modulation Through Ion Implantation
- Publication number 20180182636
- Publication date Jun 28, 2018
- Varian Semiconductor Equipment Associates, Inc.
- Rajesh Prasad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Etch Rate Modulation Through Ion Implantation
- Publication number 20170178914
- Publication date Jun 22, 2017
- Varian Semiconductor Equipment Associates, Inc.
- Rajesh Prasad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method Of Doping A Polycrystalline Transistor Channel For Vertical...
- Publication number 20150017772
- Publication date Jan 15, 2015
- Varian Semiconductor Equipment Associates, Inc.
- Andrew M. Waite
- H01 - BASIC ELECTRIC ELEMENTS

Rajesh Prasad

Person

Patents Grantslast 30 patents

Sequential plasma and thermal treatment

Highly etch selective amorphous carbon film

Highly etch selective amorphous carbon film

Techniques for improved low dielectric constant film processing

Method of forming a 2-dimensional channel material, using ion impla...

System and technique for profile modulation using high tilt angles

Highly etch selective amorphous carbon film

Techniques for reducing tip to tip shorting and critical dimension...

Techniques for forming low stress etch-resistant mask using implant...

Techniques for forming dual epitaxial source/drain semiconductor de...

Highly etch selective amorphous carbon film

Techniques and structure for forming dynamic random-access device u...

Techniques for forming low stress mask using implantation

Techniques for improved spacer in nanosheet device

Techniques for improved removal of sacrificial mask

Etch rate modulation through ion implantation

Etch rate modulation through ion implantation

Method of doping a polycrystalline transistor channel for vertical...

Patents Applicationslast 30 patents

SEQUENTIAL PLASMA AND THERMAL TREATMENT

IMPLANT INTO EUV METAL OXIDE PHOTORESIST MODULE TO REDUCE EUV DOSE

ION IMPLANTATION FOR REDUCED ROUGHNESS OF SILICON NITRIDE

ION IMPLANTATION FOR INCREASED ADHESION WITH RESIST MATERIAL

FORMING A DOPED HARDMASK

Etch Rate Modulation of FinFET Through High-Temperature Ion Implant...

ION IMPLANTATION FOR REDUCED HYDROGEN INCORPORATION IN AMORPHOUS SI...

METHODS FOR OXIDIZING A SILICON HARDMASK USING ION IMPLANT

HIGHLY ETCH SELECTIVE AMORPHOUS CARBON FILM

HIGHLY ETCH SELECTIVE AMORPHOUS CARBON FILM

TECHNIQUES FOR IMPROVED LOW DIELECTRIC CONSTANT FILM PROCESSING

SEQUENTIAL PLASMA AND THERMAL TREATMENT

METHOD OF FORMING A 2-DIMENSIONAL CHANNEL MATERIAL USING ION IMPLAN...

System And Technique For Profile Modulation Using High Tilt Angles

TECHNIQUES FOR REDUCING TIP TO TIP SHORTING AND CRITICAL DIMENSION...

HIGHLY ETCH SELECTIVE AMORPHOUS CARBON FILM

TECHNIQUES FOR FORMING DUAL EPITAXIAL SOURCE/DRAIN SEMICONDUCTOR DE...

TECHNIQUES AND STRUCTURE FOR FORMING DYNAMIC RANDOM-ACCESS DEVICE U...

TECHNIQUES FOR FORMING LOW STRESS MASK USING IMPLANTATION

TECHNIQUES FOR FORMING LOW STRESS ETCH-RESISTANT MASK USING IMPLANT...

TECHNIQUES FOR IMPROVED REMOVAL OF SACRIFICIAL MASK

HIGHLY ETCH SELECTIVE AMORPHOUS CARBON FILM

Etch Rate Modulation Through Ion Implantation

Etch Rate Modulation Through Ion Implantation

Method Of Doping A Polycrystalline Transistor Channel For Vertical...