Ralf Otterbach

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Dresden, DE

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Patents Grantslast 30 patents

Information Patent Grant
Multi-step deposition of a spacer material for reducing void format...
- Patent number 8,987,103
- Issue date Mar 24, 2015
- GLOBALFOUNDRIES Inc.
- Markus Lenski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dopant profile tuning for MOS devices by adapting a spacer width pr...
- Patent number 8,507,351
- Issue date Aug 13, 2013
- GLOBALFOUNDRIES Inc.
- Anthony Mowry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced cap layer integrity in a high-K metal gate stack by using...
- Patent number 7,981,740
- Issue date Jul 19, 2011
- GLOBALFOUNDRIES Inc.
- Markus Lenski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dopant profile tuning for MOS devices by adapting a spacer width pr...
- Patent number 7,977,179
- Issue date Jul 12, 2011
- GLOBALFOUNDRIES, Inc.
- Anthony Mowry
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF FORMING A SEMICONDUCTOR DEVICE
- Publication number 20130037866
- Publication date Feb 14, 2013
- GLOBALFOUNDRIES INC.
- Hans-Jürgen Thees
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPANT PROFILE TUNING FOR MOS DEVICES BY ADAPTING A SPACER WIDTH PR...
- Publication number 20110230039
- Publication date Sep 22, 2011
- Anthony Mowry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED CAP LAYER INTEGRITY IN A HIGH-K METAL GATE STACK BY USING...
- Publication number 20100330757
- Publication date Dec 30, 2010
- Markus Lenski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPANT PROFILE TUNING FOR MOS DEVICES BY ADAPTING A SPACER WIDTH PR...
- Publication number 20090108295
- Publication date Apr 30, 2009
- Anthony Mowry
- H01 - BASIC ELECTRIC ELEMENTS