Ralf van Bentum

Person

Radebeul, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor structure including a ferroelectric transistor and me...
- Patent number 9,536,992
- Issue date Jan 3, 2017
- GLOBALFOUNDRIES Inc.
- Ralf van Bentum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor structure including a ferroelectr...
- Patent number 9,412,600
- Issue date Aug 9, 2016
- GLOBALFOUNDRIES Inc.
- Ralf van Bentum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure including a split gate nonvolatile memory c...
- Patent number 9,368,605
- Issue date Jun 14, 2016
- GLOBALFOUNDRIES Inc.
- Igor Lusetsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure including a ferroelectric transistor and me...
- Patent number 9,293,556
- Issue date Mar 22, 2016
- GLOBALFOUNDRIES Inc.
- Ralf van Bentum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Drain/source extension structure of a field effect transistor with...
- Patent number 8,697,530
- Issue date Apr 15, 2014
- GLOBALFOUNDRIES Inc.
- Ekkehard Pruefer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of improving memory cell device by ion implantation
- Patent number 8,431,455
- Issue date Apr 30, 2013
- GLOBALFOUNDRIES Inc.
- Ralf van Bentum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench isolation structure having different stress
- Patent number 8,158,486
- Issue date Apr 17, 2012
- Advanced Micro Devices, Inc.
- Ralf Van Bentum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor having a channel with biaxial strain induced by silicon/...
- Patent number 7,754,555
- Issue date Jul 13, 2010
- GLOBALFOUNDRIES Inc.
- Andreas Gehring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for reducing silicide defects by removing contaminants prior...
- Patent number 7,528,026
- Issue date May 5, 2009
- Advanced Micro Devices, Inc.
- Markus Lenski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technique for forming transistors having raised drain and source re...
- Patent number 7,176,110
- Issue date Feb 13, 2007
- Advanced Micro Devices, Inc.
- Ralf van Bentum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technique for forming a transistor having raised drain and source r...
- Patent number 7,144,786
- Issue date Dec 5, 2006
- Advanced Micro Devices, Inc.
- Ralf van Bentum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Advanced technique for forming a transistor having raised drain and...
- Patent number 7,138,320
- Issue date Nov 21, 2006
- Advanced Micro Devices, Inc.
- Ralf van Bentum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technique for forming contacts for buried doped regions in a semico...
- Patent number 7,064,074
- Issue date Jun 20, 2006
- Advanced Micro Devices, Inc.
- Ralf van Bentum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a trench isolation structure for a semicond...
- Patent number 6,943,088
- Issue date Sep 13, 2005
- Advanced Micro Devices, Inc.
- Ralf van Bentum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor-on-insulator (SOI) device having source/drain silicon...
- Patent number 6,787,852
- Issue date Sep 7, 2004
- Advanced Micro Devices, Inc.
- Bin Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI MOSFET with asymmetrical source/body and drain/body junctions
- Patent number 6,774,436
- Issue date Aug 10, 2004
- Advanced Micro Devices, Inc.
- Bin Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-thickness silicon films on a single semiconductor-on-insulato...
- Patent number 6,548,369
- Issue date Apr 15, 2003
- Advanced Micro Devices, Inc.
- Ralf van Bentum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor-on-insulator (SOI) device having source/drain silicon...
- Patent number 6,495,402
- Issue date Dec 17, 2002
- Advanced Micro Devices, Inc.
- Bin Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI MOSFET with graded source/drain silicide
- Patent number 6,465,313
- Issue date Oct 15, 2002
- Advanced Micro Devices, Inc.
- Bin Yu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SRAM BIT CELLS
- Publication number 20230209795
- Publication date Jun 29, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Ralf van BENTUM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE INCLUDING A SPLIT GATE NONVOLATILE MEMORY C...
- Publication number 20160247811
- Publication date Aug 25, 2016
- GLOBALFOUNDRIES INC.
- Igor Lusetsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE INCLUDING A FERROELECTRIC TRANSISTOR AND ME...
- Publication number 20160163821
- Publication date Jun 9, 2016
- GLOBALFOUNDRIES INC.
- Ralf van Bentum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A SEMICONDUCTOR STRUCTURE INCLUDING A FERROELECTR...
- Publication number 20160064228
- Publication date Mar 3, 2016
- GLOBALFOUNDRIES INC.
- Ralf van Bentum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE INCLUDING A FERROELECTRIC TRANSISTOR AND ME...
- Publication number 20160035856
- Publication date Feb 4, 2016
- GLOBALFOUNDRIES INC.
- Ralf van Bentum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE INCLUDING A SPLIT GATE NONVOLATILE MEMORY C...
- Publication number 20150060983
- Publication date Mar 5, 2015
- GLOBALFOUNDRIES INC.
- Igor Lusetsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Improving Memory Cell Device by Ion Implantation
- Publication number 20120329220
- Publication date Dec 27, 2012
- GLOBALFOUNDRIES INC.
- Ralf van Bentum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI TRANSISTOR WITH FLOATING BODY FOR INFORMATION STORAGE HAVING AS...
- Publication number 20090242996
- Publication date Oct 1, 2009
- Ralf Van Bentum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RAM CELL INCLUDING A TRANSISTOR WITH FLOATING BODY FOR INFORMATION...
- Publication number 20090166738
- Publication date Jul 2, 2009
- Nihar-Ranjan Mohapatra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR HAVING A CHANNEL WITH BIAXIAL STRAIN INDUCED BY SILICON/...
- Publication number 20080001178
- Publication date Jan 3, 2008
- Andreas Gehring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRAIN/SOURCE EXTENSION STRUCTURE OF A FIELD EFFECT TRANSISTOR WITH...
- Publication number 20080001191
- Publication date Jan 3, 2008
- Ekkehard Pruefer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR REDUCING SILICIDE DEFECTS BY REMOVING CONTAMINANTS PRIOR...
- Publication number 20070254437
- Publication date Nov 1, 2007
- Markus Lenski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH ISOLATION STRUCTURE HAVING DIFFERENT STRESS
- Publication number 20070155122
- Publication date Jul 5, 2007
- Ralf Van Bentum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Technique for forming a transistor having raised drain and source r...
- Publication number 20050095796
- Publication date May 5, 2005
- Ralf van Bentum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Technique for forming transistors having raised drain and source re...
- Publication number 20050095820
- Publication date May 5, 2005
- Ralf van Bentum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench isolation structure for a semiconductor device with a differ...
- Publication number 20040119135
- Publication date Jun 24, 2004
- Ralf van Bentum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of providing a thick thermal oxide in trench isolation
- Publication number 20040038495
- Publication date Feb 26, 2004
- Karsten Wieczorek
- H01 - BASIC ELECTRIC ELEMENTS

Ralf van Bentum

Person

Patents Grantslast 30 patents

Semiconductor structure including a ferroelectric transistor and me...

Method of forming a semiconductor structure including a ferroelectr...

Semiconductor structure including a split gate nonvolatile memory c...

Semiconductor structure including a ferroelectric transistor and me...

Drain/source extension structure of a field effect transistor with...

Method of improving memory cell device by ion implantation

Trench isolation structure having different stress

Transistor having a channel with biaxial strain induced by silicon/...

Method for reducing silicide defects by removing contaminants prior...

Technique for forming transistors having raised drain and source re...

Technique for forming a transistor having raised drain and source r...

Advanced technique for forming a transistor having raised drain and...

Technique for forming contacts for buried doped regions in a semico...

Method of manufacturing a trench isolation structure for a semicond...

Semiconductor-on-insulator (SOI) device having source/drain silicon...

SOI MOSFET with asymmetrical source/body and drain/body junctions

Multi-thickness silicon films on a single semiconductor-on-insulato...

Semiconductor-on-insulator (SOI) device having source/drain silicon...

SOI MOSFET with graded source/drain silicide

Patents Applicationslast 30 patents

SRAM BIT CELLS

SEMICONDUCTOR STRUCTURE INCLUDING A SPLIT GATE NONVOLATILE MEMORY C...

SEMICONDUCTOR STRUCTURE INCLUDING A FERROELECTRIC TRANSISTOR AND ME...

METHOD OF FORMING A SEMICONDUCTOR STRUCTURE INCLUDING A FERROELECTR...

SEMICONDUCTOR STRUCTURE INCLUDING A FERROELECTRIC TRANSISTOR AND ME...

SEMICONDUCTOR STRUCTURE INCLUDING A SPLIT GATE NONVOLATILE MEMORY C...

Method of Improving Memory Cell Device by Ion Implantation

SOI TRANSISTOR WITH FLOATING BODY FOR INFORMATION STORAGE HAVING AS...

RAM CELL INCLUDING A TRANSISTOR WITH FLOATING BODY FOR INFORMATION...

TRANSISTOR HAVING A CHANNEL WITH BIAXIAL STRAIN INDUCED BY SILICON/...

DRAIN/SOURCE EXTENSION STRUCTURE OF A FIELD EFFECT TRANSISTOR WITH...

METHOD FOR REDUCING SILICIDE DEFECTS BY REMOVING CONTAMINANTS PRIOR...

TRENCH ISOLATION STRUCTURE HAVING DIFFERENT STRESS

Technique for forming a transistor having raised drain and source r...

Technique for forming transistors having raised drain and source re...

Trench isolation structure for a semiconductor device with a differ...

Method of providing a thick thermal oxide in trench isolation