Randy W. Cotton

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Pflugerville, TX, US

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Patents Grantslast 30 patents

Information Patent Grant
Dual metal silicide scheme using a dual spacer process
- Patent number 7,544,575
- Issue date Jun 9, 2009
- FREESCALE SEMICONDUCTOR, INC.
- Olubunmi O. Adetutu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device having a dielectric layer...
- Patent number 7,071,038
- Issue date Jul 4, 2006
- FREESCALE SEMICONDUCTOR, INC.
- Dina H. Triyoso
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Dual metal silicide scheme using a dual spacer process
- Publication number 20070166937
- Publication date Jul 19, 2007
- Olubunmi O. Adetutu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming a semiconductor device having a dielectric layer...
- Publication number 20060063336
- Publication date Mar 23, 2006
- Dina H. Triyoso
- H01 - BASIC ELECTRIC ELEMENTS