Raymond Josephus Engelbart Hueting

Person

Eindhoven, NL

People

Patents Grantslast 30 patents

Information Patent Grant
Bipolar transistor with lateral emitter and collector and method of...
- Patent number 9,306,017
- Issue date Apr 5, 2016
- EPCOS AG
- Léon C. M. van den Oever
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with a field shaping region
- Patent number 7,786,506
- Issue date Aug 31, 2010
- NXP B.V.
- Anco Heringa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MOSFET
- Patent number 7,696,599
- Issue date Apr 13, 2010
- NXP B.V.
- Raymond J. E. Hueting
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral field-effect transistor having an insulated trench gate ele...
- Patent number 7,671,440
- Issue date Mar 2, 2010
- NXP B.V.
- Raymond J. E. Hueting
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing thereof
- Patent number 7,659,169
- Issue date Feb 9, 2010
- NXP B.V.
- Radu Surdeanu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MOS structure
- Patent number 7,629,647
- Issue date Dec 8, 2009
- NXP B.V.
- Raymond J. E. Hueting
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire semiconductor device
- Patent number 7,538,337
- Issue date May 26, 2009
- NXP B.V.
- Erwin A. Hijzen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with a field shaping region
- Patent number 7,423,299
- Issue date Sep 9, 2008
- NXP B.V.
- Anco Heringa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench insulated gate field effect transistor
- Patent number 7,408,223
- Issue date Aug 5, 2008
- NXP B.V.
- Raymond J. E. Hueting
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical insulated gate transistor and manufacturing method
- Patent number 7,262,460
- Issue date Aug 28, 2007
- NXP B.V.
- Jurriaan Schmitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate power semiconductor devices
- Patent number 7,235,842
- Issue date Jun 26, 2007
- NXP B.V.
- Raymond J. E. Hueting
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of maufacturing a trench-gate semiconductor device
- Patent number 7,199,010
- Issue date Apr 3, 2007
- NXP B.V.
- Erwin A. Hijzen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Edge termination in MOS transistors
- Patent number 7,160,793
- Issue date Jan 9, 2007
- NXP B.V.
- Raymond J. E. Hueting
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trenched semiconductor devices and their manufacture
- Patent number 7,033,889
- Issue date Apr 25, 2006
- Koninklijke Philips Electronics N.V.
- Erwin A. Hijzen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trenched semiconductor devices and their manufacture
- Patent number 6,956,264
- Issue date Oct 18, 2005
- Koninklijke Philips Electronics N.V.
- Erwin A. Hijzen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Edge termination in MOS transistors
- Patent number 6,936,890
- Issue date Aug 30, 2005
- Koninklijke Philips Electronics N.V.
- Raymond J. E. Hueting
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Edge termination in a trench-gate MOSFET
- Patent number 6,833,583
- Issue date Dec 21, 2004
- Koninklijke Philips Electronics N.V.
- Michael A. A. In't Zandt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench-gate semiconductor devices and the manufacture thereof
- Patent number 6,784,488
- Issue date Aug 31, 2004
- Koninklijke Philips Electronics N.V.
- Eddie Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench bipolar transistor
- Patent number 6,777,780
- Issue date Aug 17, 2004
- Koninklijke Philips Electronics N.V.
- Raymond J. E. Hueting
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect device having a drift region and field shaping region...
- Patent number 6,774,434
- Issue date Aug 10, 2004
- Koninklijke Philips Electronics N.V.
- Raymond J. E. Hueting
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect semiconductor devices
- Patent number 6,600,194
- Issue date Jul 29, 2003
- Koninklijke Philips Electronics N.V.
- Raymond J. E. Hueting
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 6,559,502
- Issue date May 6, 2003
- Koninklijke Philips Electronics N.V.
- Raymond J. E. Hueting
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench-gate semiconductor devices and their manufacture
- Patent number 6,541,817
- Issue date Apr 1, 2003
- Koninklijke Philips Electronics N.V.
- Godefridus A. M. Hurkx
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 6,534,823
- Issue date Mar 18, 2003
- Koninklijke Philips Electronics N.V.
- Raymond J. E. Hueting
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacture of trench-gate semiconductor devices
- Patent number 6,518,129
- Issue date Feb 11, 2003
- Koninklijke Philips Electronics N.V.
- Raymond J. E. Hueting
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with FET MESA structure and vertical contact e...
- Patent number 6,515,348
- Issue date Feb 4, 2003
- Koninklijke Philips Electronics N.V.
- Raymond J. E. Hueting
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench-gate field-effect transistors and their manufacture
- Patent number 6,509,608
- Issue date Jan 21, 2003
- Koninklijke Philips Electronics N.V.
- Raymond J. E. Hueting
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trenched Schottky rectifiers
- Patent number 6,441,454
- Issue date Aug 27, 2002
- Koninklijke Philips Electronics N.V.
- Erwin A. Hijzen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cellular trench-gate field-effect transistors
- Patent number 6,359,308
- Issue date Mar 19, 2002
- U.S. Philips Corporation
- Erwin A. Hijzen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a trench gate field effect semiconductor de...
- Patent number 6,331,467
- Issue date Dec 18, 2001
- U.S. Philips Corporation
- Adam R. Brown
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Bipolar Transistor with Lateral Emitter and Collector and Method of...
- Publication number 20120273760
- Publication date Nov 1, 2012
- EPCOS AG
- Lcon C.M. van den Oever
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Devices with a Field Shaping Region
- Publication number 20100038676
- Publication date Feb 18, 2010
- Anco Heringa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral Field-Effect Transistor Having an Insulated Trench Gate Ele...
- Publication number 20080203473
- Publication date Aug 28, 2008
- Koninklijke Philips Electronics N.V.
- Raymond J. E. Hueting
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing a Semiconductor Device and Semiconductor De...
- Publication number 20080194069
- Publication date Aug 14, 2008
- Koninklijke Philips Electronics N.V.
- Radu Surdeanu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nanowire Semiconductor Device
- Publication number 20080029909
- Publication date Feb 7, 2008
- Erwin A. Hijzen
- B82 - NANO-TECHNOLOGY
Information Patent Application
Trench insulated gate field effect transistor
- Publication number 20070132014
- Publication date Jun 14, 2007
- Koninklijke Philips Electronics N.V.
- Raymond J.E. Hueting
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench insulated gate field effect transistor
- Publication number 20070126055
- Publication date Jun 7, 2007
- Koninklijke Philips Electronics N.V.
- Raymond J. E. Hueting
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench mosfet
- Publication number 20070108515
- Publication date May 17, 2007
- Koninklijke Philips Electronics, N.V.
- Raymond J.E. Hueting
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench mos structure
- Publication number 20060202305
- Publication date Sep 14, 2006
- Koninklijke Philips Electronics N.V.
- Raymond Hueting
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Insulated gate power semiconductor devices
- Publication number 20060189063
- Publication date Aug 24, 2006
- Koninklijke Philips Electronics N.V.
- Raymond J.E. Hueting
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical insulated gate transistor and manufacturing method
- Publication number 20060049453
- Publication date Mar 9, 2006
- Koninklijke Philips Electronics N.V.
- Jurriaan Schmitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing a trench-gate semiconductor device
- Publication number 20060017097
- Publication date Jan 26, 2006
- Koninklijke Philips Electronics, N.V.
- Erwin A Hijzen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trenched semiconductor devices and their manufacture
- Publication number 20060008991
- Publication date Jan 12, 2006
- Erwin A. Hijzen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Edge termination in MOS transistors
- Publication number 20050156232
- Publication date Jul 21, 2005
- Raymond J.E. Hueting
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing such device
- Publication number 20050001288
- Publication date Jan 6, 2005
- Raymond Josephus Engelbart Hueting
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trenched semiconductor devices and their manufacture
- Publication number 20030146470
- Publication date Aug 7, 2003
- Koninklijke Philips Electronics N.V.
- Erwin A. Hijzen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field effect transistor semiconductor device
- Publication number 20030094649
- Publication date May 22, 2003
- Koninklijke Philips Electronics
- Raymond J.E. Hueting
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Edge termination in a trench-gate MOSFET
- Publication number 20030047777
- Publication date Mar 13, 2003
- Koninklijke Philips Electronics N.V.
- Michael A.A. In't Zandt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Edge termination in MOS transistors
- Publication number 20030047776
- Publication date Mar 13, 2003
- Raymond J.E. Hueting
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench bipolar transistor
- Publication number 20030030488
- Publication date Feb 13, 2003
- Koninklijke Philips Electronics N.V.
- Raymond J.E. Hueting
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Manufacture of trench-gate semiconductor devices
- Publication number 20020137291
- Publication date Sep 26, 2002
- Koninklijke Philips Electronics N.V.
- Michael A.A. Zandt In't
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Manufacture of trench-gate semiconductor devices
- Publication number 20020022324
- Publication date Feb 21, 2002
- Raymond J.E. Hueting
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20010045599
- Publication date Nov 29, 2001
- Raymond J.E. Hueting
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20010045578
- Publication date Nov 29, 2001
- Raymond J.E. Hueting
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20010040273
- Publication date Nov 15, 2001
- Koninklijke Philips Electronics N.V.
- Raymond J.E. Hueting
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH SEMICONDUCTOR DEVICE MANUFACTURE WITH A THICKER UPPER INSULA...
- Publication number 20010036704
- Publication date Nov 1, 2001
- Koninklijke Philips Electronics N.V.
- Raymond J.E. Hueting
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field-effect semiconductor devices
- Publication number 20010020720
- Publication date Sep 13, 2001
- U.S. PHILIPS CORPORATION
- Raymond J.E. Hueting
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trenched schottky rectifiers
- Publication number 20010010385
- Publication date Aug 2, 2001
- U.S. PHILIPS CORPORATION
- Erwin A. Hijzen
- H01 - BASIC ELECTRIC ELEMENTS

Raymond Josephus Engelbart Hueting

Person

Patents Grantslast 30 patents

Bipolar transistor with lateral emitter and collector and method of...

Semiconductor devices with a field shaping region

Trench MOSFET

Lateral field-effect transistor having an insulated trench gate ele...

Semiconductor device and method of manufacturing thereof

Trench MOS structure

Nanowire semiconductor device

Semiconductor devices with a field shaping region

Trench insulated gate field effect transistor

Vertical insulated gate transistor and manufacturing method

Insulated gate power semiconductor devices

Method of maufacturing a trench-gate semiconductor device

Edge termination in MOS transistors

Trenched semiconductor devices and their manufacture

Trenched semiconductor devices and their manufacture

Edge termination in MOS transistors

Edge termination in a trench-gate MOSFET

Trench-gate semiconductor devices and the manufacture thereof

Trench bipolar transistor

Field effect device having a drift region and field shaping region...

Field-effect semiconductor devices

Semiconductor device

Trench-gate semiconductor devices and their manufacture

Semiconductor device

Manufacture of trench-gate semiconductor devices

Semiconductor device with FET MESA structure and vertical contact e...

Trench-gate field-effect transistors and their manufacture

Trenched Schottky rectifiers

Cellular trench-gate field-effect transistors

Method of manufacturing a trench gate field effect semiconductor de...

Patents Applicationslast 30 patents

Bipolar Transistor with Lateral Emitter and Collector and Method of...

Semiconductor Devices with a Field Shaping Region

Lateral Field-Effect Transistor Having an Insulated Trench Gate Ele...

Method of Manufacturing a Semiconductor Device and Semiconductor De...

Nanowire Semiconductor Device

Trench insulated gate field effect transistor

Trench insulated gate field effect transistor

Trench mosfet

Trench mos structure

Insulated gate power semiconductor devices

Vertical insulated gate transistor and manufacturing method

Method of manufacturing a trench-gate semiconductor device

Trenched semiconductor devices and their manufacture

Edge termination in MOS transistors

Semiconductor device and method of manufacturing such device

Trenched semiconductor devices and their manufacture

Field effect transistor semiconductor device

Edge termination in a trench-gate MOSFET

Edge termination in MOS transistors

Trench bipolar transistor

Manufacture of trench-gate semiconductor devices

Manufacture of trench-gate semiconductor devices

Semiconductor device

Semiconductor device

Semiconductor device

TRENCH SEMICONDUCTOR DEVICE MANUFACTURE WITH A THICKER UPPER INSULA...

Field-effect semiconductor devices

Trenched schottky rectifiers