Reima T. Laaksonen

Person

Dallas, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method for manufacturing a semiconductor device using a nitrogen co...
- Patent number 8,802,577
- Issue date Aug 12, 2014
- Texas Instruments Incorporated
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of gate dielectrics with uniform nitrogen distribution
- Patent number 8,492,291
- Issue date Jul 23, 2013
- Texas Instruments Incorporated
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming multi gate devices using a silicon oxide masking...
- Patent number 7,799,649
- Issue date Sep 21, 2010
- Texas Instruments Incorporated
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming ultra-thin low leakage multiple gate devices usi...
- Patent number 7,670,913
- Issue date Mar 2, 2010
- Texas Instruments Incorporated
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming ultra thin low leakage multi gate devices
- Patent number 7,459,390
- Issue date Dec 2, 2008
- Texas Instruments Incorporated
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to obtain uniform nitrogen profile in gate dielectrics
- Patent number 7,435,651
- Issue date Oct 14, 2008
- Texas Instruments Incorporated
- Ajith Varghese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of nitrogen containing dielectric layers having a uniform...
- Patent number 7,393,787
- Issue date Jul 1, 2008
- Texas Instruments Incorporated
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor process using delay-compensated exposure
- Patent number 6,866,974
- Issue date Mar 15, 2005
- Texas Instruments Incorporated
- Keeho Kim
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Polysilicon processing using an anti-reflective dual layer hardmask...
- Patent number 6,803,661
- Issue date Oct 12, 2004
- Texas Instruments Incorporated
- Gautam V. Thakar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of photolithographically forming extremely narrow transistor...
- Patent number 6,762,130
- Issue date Jul 13, 2004
- Texas Instruments Incorporated
- Reima Tapani Laaksonen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for forming a transistor having source and drain...
- Patent number 6,737,325
- Issue date May 18, 2004
- Texas Instruments Incorporated
- Manoj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polysilicon processing using an anti-reflective dual layer hardmask...
- Patent number 6,624,068
- Issue date Sep 23, 2003
- Texas Instruments Incorporated
- Gautam V. Thakar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for controlling a semiconductor manufacturing process
- Patent number 6,582,973
- Issue date Jun 24, 2003
- Texas Instruments Incorporated
- Reima Tapani Laaksonen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Utilizing amorphorization of polycrystalline structures to achieve...
- Patent number 6,482,688
- Issue date Nov 19, 2002
- Texas Instruments Incorporated
- Chimin Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunable gate linewidth reduction process
- Patent number 6,362,111
- Issue date Mar 26, 2002
- Texas Instruments Incorporated
- Reima Laaksonen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon processing method
- Patent number 6,214,736
- Issue date Apr 10, 2001
- Texas Instruments Incorporated
- Antonio L. P. Rotondaro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stack etch method for flash memory devices
- Patent number 6,087,220
- Issue date Jul 11, 2000
- Texas Instruments Incorporated
- Daty Michael Rogers
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FORMATION OF GATE DIELECTRICS WITH UNIFORM NITROGEN DISTRIBUTION
- Publication number 20120149186
- Publication date Jun 14, 2012
- TEXAS INSTRUMENTS INCORPORATED
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE USING A NITROGEN CO...
- Publication number 20120028431
- Publication date Feb 2, 2012
- TEXAS INSTRUMENTS INCORPORATED
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO OBTAIN UNIFORM NITROGEN PROFILE IN GATE DIELECTRICS
- Publication number 20080315324
- Publication date Dec 25, 2008
- TEXAS INSTRUMENTS INCORPORATED
- AJITH VARGHESE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A METHOD FOR FORMING MULTI GATE DEVICES USING A SILICON OXIDE MASKI...
- Publication number 20070243683
- Publication date Oct 18, 2007
- TEXAS INSTRUMENTS INCORPORATED
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming ultra thin low leakage multi gate devices
- Publication number 20070218598
- Publication date Sep 20, 2007
- TEXAS INSTRUMENTS INCORPORATED
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming ultra thin low leakage multi gate devices using...
- Publication number 20070218636
- Publication date Sep 20, 2007
- Texas Instruments Inc.
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for manufacturing a semiconductor device using a nitrogen co...
- Publication number 20070196970
- Publication date Aug 23, 2007
- Texas Instruments Inc.
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Formation of gate dielectrics with uniform nitrogen distribution
- Publication number 20070066021
- Publication date Mar 22, 2007
- Texas Instruments Inc.
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method to obtain uniform nitrogen profile in gate dielectrics
- Publication number 20070054455
- Publication date Mar 8, 2007
- Texas Instruments Inc.
- Ajith Varghese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Formation of nitrogen containing dielectric layers having a uniform...
- Publication number 20070042559
- Publication date Feb 22, 2007
- Texas Instruments, Incorporated
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Polysilicon processing using an anti-reflective dual layer hardmask...
- Publication number 20040092089
- Publication date May 13, 2004
- Gautam V. Thakar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor process using delay-compensated exposure
- Publication number 20040076896
- Publication date Apr 22, 2004
- Keeho Kim
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
Method of photolithographically forming extremely narrow transistor...
- Publication number 20030224606
- Publication date Dec 4, 2003
- TEXAS INSTRUMENTS INCORPORATED
- Reima Tapani Laaksonen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Polysilicon processing using an anti-reflective dual layer hardmask...
- Publication number 20030040179
- Publication date Feb 27, 2003
- Gautam V. Thakar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Utilizing amorphorization of polycrystalline structures to achieve...
- Publication number 20020142530
- Publication date Oct 3, 2002
- Chimin Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hard-mask etch process
- Publication number 20020072225
- Publication date Jun 13, 2002
- Reima T. Laaksonen
- H01 - BASIC ELECTRIC ELEMENTS

Reima T. Laaksonen

Person

Patents Grantslast 30 patents

Method for manufacturing a semiconductor device using a nitrogen co...

Formation of gate dielectrics with uniform nitrogen distribution

Method for forming multi gate devices using a silicon oxide masking...

Method for forming ultra-thin low leakage multiple gate devices usi...

Method for forming ultra thin low leakage multi gate devices

Method to obtain uniform nitrogen profile in gate dielectrics

Formation of nitrogen containing dielectric layers having a uniform...

Semiconductor process using delay-compensated exposure

Polysilicon processing using an anti-reflective dual layer hardmask...

Method of photolithographically forming extremely narrow transistor...

Method and system for forming a transistor having source and drain...

Polysilicon processing using an anti-reflective dual layer hardmask...

Method for controlling a semiconductor manufacturing process

Utilizing amorphorization of polycrystalline structures to achieve...

Tunable gate linewidth reduction process

Silicon processing method

Stack etch method for flash memory devices

Patents Applicationslast 30 patents

FORMATION OF GATE DIELECTRICS WITH UNIFORM NITROGEN DISTRIBUTION

METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE USING A NITROGEN CO...

METHOD TO OBTAIN UNIFORM NITROGEN PROFILE IN GATE DIELECTRICS

A METHOD FOR FORMING MULTI GATE DEVICES USING A SILICON OXIDE MASKI...

Method for forming ultra thin low leakage multi gate devices

Method for forming ultra thin low leakage multi gate devices using...

Method for manufacturing a semiconductor device using a nitrogen co...

Formation of gate dielectrics with uniform nitrogen distribution

Method to obtain uniform nitrogen profile in gate dielectrics

Formation of nitrogen containing dielectric layers having a uniform...

Polysilicon processing using an anti-reflective dual layer hardmask...

Semiconductor process using delay-compensated exposure

Method of photolithographically forming extremely narrow transistor...

Polysilicon processing using an anti-reflective dual layer hardmask...

Utilizing amorphorization of polycrystalline structures to achieve...

Hard-mask etch process