Reiner Barthelmess

Person

Eltmann, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Power semiconductor component for voltage limiting, arrangement hav...
- Patent number 11,973,147
- Issue date Apr 30, 2024
- INFINEON TECHNOLOGIES BIPOLAR GMBH & CO. KG
- Juergen Schiele
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Short-circuit semiconductor component and method for operating it
- Patent number 11,664,445
- Issue date May 30, 2023
- INFINEON TECHNOLOGIES BIPOLAR GMBH & CO. KG
- Mario Schenk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Short-circuit semiconductor component and method for operating same
- Patent number 11,646,365
- Issue date May 9, 2023
- INFINEON TECHNOLOGIES BIPOLAR GMBH & CO. KG
- Uwe Kellner-Werdehausen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Disc-shaped thyristor for a plurality of plated-through semiconduct...
- Patent number 10,008,486
- Issue date Jun 26, 2018
- INFINEON TECHNOLOGIES BIPOLAR GMBH & CO. KG
- Mario Schenk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component including a short-circuit structure
- Patent number 9,876,004
- Issue date Jan 23, 2018
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component including a short-circuit structure
- Patent number 9,269,769
- Issue date Feb 23, 2016
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component with optimized edge termination
- Patent number 8,946,867
- Issue date Feb 3, 2015
- Infineon Technologies Bipolar GmbH & Co. KG
- Reiner Barthelmess
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar power semiconductor component comprising a p-type emitter a...
- Patent number 8,415,710
- Issue date Apr 9, 2013
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component and method for producing the same
- Patent number 8,187,937
- Issue date May 29, 2012
- Infineon Technologies AG
- Reiner Barthelmess
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a stop zone in a semiconductor body and semico...
- Patent number 8,178,411
- Issue date May 15, 2012
- Infineon Technologies AG
- Reiner Barthelmess
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a diode
- Patent number 8,034,700
- Issue date Oct 11, 2011
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Arrangement including a semiconductor device and a connecting element
- Patent number 8,018,064
- Issue date Sep 13, 2011
- Infineon Technologies AG
- Uwe Kellner-Werdehausen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar power semiconductor component comprising a p-type emitter a...
- Patent number 7,884,389
- Issue date Feb 8, 2011
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode
- Patent number 7,838,969
- Issue date Nov 23, 2010
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High speed diode
- Patent number 7,812,368
- Issue date Oct 12, 2010
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for the production of a buried stop zone in a semiconductor...
- Patent number 7,749,876
- Issue date Jul 6, 2010
- Infineon Technologies AG
- Reiner Barthelmess
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thyristor with recovery protection
- Patent number 7,687,826
- Issue date Mar 30, 2010
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a stop zone in a semiconductor body and semico...
- Patent number 7,667,297
- Issue date Feb 23, 2010
- Infineon Technologies AG
- Reiner Barthelmess
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode
- Patent number 7,656,011
- Issue date Feb 2, 2010
- Infineon Technologies AG
- Hans-Joachim Schulze
Information Patent Grant
Semiconductor component with a channel stop zone
- Patent number 7,629,665
- Issue date Dec 8, 2009
- Infineon Technologies AG
- Reiner Barthelmess
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for production of a buried stop zone in a semiconductor comp...
- Patent number 7,361,970
- Issue date Apr 22, 2008
- Infineon Technologies AG
- Reiner Barthelmess
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component and method for producing the same
- Patent number 7,319,250
- Issue date Jan 15, 2008
- EUPEC Europaeische Gesellschaft fur Leistungshalbleiter mbH
- Reiner Barthelmess
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a semiconductor having a field zone
- Patent number 7,268,079
- Issue date Sep 11, 2007
- Infineon Technologies AG
- Elmar Falck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage diode
- Patent number 6,770,917
- Issue date Aug 3, 2004
- Infineon Technologies AG
- Reiner Barthelmess
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor component having a mesa edge termination
- Patent number 6,696,705
- Issue date Feb 24, 2004
- Eupec Europaeische Gesellschaft fuer Leistungshalbleiter mbH & Co. KG
- Reiner Barthelmess
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a power semiconductor device with a stop zone
- Patent number 6,660,569
- Issue date Dec 9, 2003
- EUPEC Europaeische Gesellschaft fuer Leitungshalbleiter mbH & Co. KG
- Reiner Barthelmess
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor component for high reverse voltages
- Patent number 6,441,408
- Issue date Aug 27, 2002
- Infineon Technologies AG
- Alfred Porst
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Power Semiconductor Component for Voltage Limiting, Arrangement Hav...
- Publication number 20220262960
- Publication date Aug 18, 2022
- INFINEON TECHNOLOGIES BIPOLAR GMBH & CO. KG
- Juergen Schiele
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHORT-CIRCUIT SEMICONDUCTOR COMPONENT AND METHOD FOR OPERATING SAME
- Publication number 20210367067
- Publication date Nov 25, 2021
- INFINEON TECHNOLOGIES BIPOLAR GMBH & CO. KG
- Uwe KELLNER-WERDEHAUSEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHORT-CIRCUIT SEMICONDUCTOR COMPONENT AND METHOD FOR OPERATING IT
- Publication number 20210036136
- Publication date Feb 4, 2021
- INFINEON TECHNOLOGIES BIPOLAR GMBH & CO. KG
- Mario SCHENK
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
IMPROVED DISC-SHAPED THYRISTOR FOR A PLURALITY OF PLATED-THROUGH SE...
- Publication number 20170033091
- Publication date Feb 2, 2017
- INFINEON TECHNOLOGIES BIPOLAR GMBH & CO. KG
- MARIO SCHENK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR COMPONENT INCLUDING A SHORT-CIRCUIT STRUCTURE
- Publication number 20160155735
- Publication date Jun 2, 2016
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR COMPONENT WITH OPTIMIZED EDGE TERMINATION
- Publication number 20140327114
- Publication date Nov 6, 2014
- INFINEON TECHNOLOGIES BIPOLAR GMBH & CO. KG
- Reiner Barthelmess
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bipolar Power Semiconductor Component Comprising a P-type Emitter a...
- Publication number 20110127576
- Publication date Jun 2, 2011
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A DIODE
- Publication number 20100136774
- Publication date Jun 3, 2010
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Producing a Stop Zone in a Semiconductor Body and Semico...
- Publication number 20100015818
- Publication date Jan 21, 2010
- Infineon Technologies AG
- Reiner Barthelmess
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR COMPONENT INCLUDING A SHORT-CIRCUIT STRUCTURE
- Publication number 20090140290
- Publication date Jun 4, 2009
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THYRISTOR AND METHODS FOR PRODUCING A THYRISTOR
- Publication number 20090057714
- Publication date Mar 5, 2009
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ARRANGEMENT INCLUDING A SEMICONDUCTOR DEVICE AND A CONNECTING ELEMENT
- Publication number 20080296774
- Publication date Dec 4, 2008
- INFINEON TECHNOLOGIES AG
- Uwe Kellner-Werdehausen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIODE
- Publication number 20080173968
- Publication date Jul 24, 2008
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for the Production of a Buried Stop Zone in a Semiconductor...
- Publication number 20080160732
- Publication date Jul 3, 2008
- Infineon Technologies AG
- Reiner Barthelmess
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING THE SAME
- Publication number 20080132048
- Publication date Jun 5, 2008
- Reiner Barthelmess
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bipolar power semiconductor component comprising a p-type emitter a...
- Publication number 20070215981
- Publication date Sep 20, 2007
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thyristor with recovery protection
- Publication number 20070051972
- Publication date Mar 8, 2007
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High speed diode
- Publication number 20070029634
- Publication date Feb 8, 2007
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Diode
- Publication number 20070007587
- Publication date Jan 11, 2007
- Reiner Barthelmess
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Component with a Channel Stop Zone
- Publication number 20070007592
- Publication date Jan 11, 2007
- Reiner Barthelmess
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Producing a Stop Zone in a Semiconductor Body and Semico...
- Publication number 20060286753
- Publication date Dec 21, 2006
- Reiner Barthelmess
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor component and method for producing the same
- Publication number 20060086991
- Publication date Apr 27, 2006
- Reiner Barthelmess
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating field rings
- Publication number 20060051923
- Publication date Mar 9, 2006
- Elmar Falck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for production of a buried stop zone in a semiconductor comp...
- Publication number 20050280076
- Publication date Dec 22, 2005
- Reiner Barthelmess
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thyristor component with improved blocking capabilities in the reve...
- Publication number 20050258448
- Publication date Nov 24, 2005
- Reiner Barthelmess
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-voltage diode and method for fabricating the high-voltage diode
- Publication number 20030183900
- Publication date Oct 2, 2003
- Reiner Barthelmess
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power semiconductor component for high reverse voltages
- Publication number 20010005036
- Publication date Jun 28, 2001
- Alfred Porst
- H01 - BASIC ELECTRIC ELEMENTS

Reiner Barthelmess

Person

Patents Grantslast 30 patents

Power semiconductor component for voltage limiting, arrangement hav...

Short-circuit semiconductor component and method for operating it

Short-circuit semiconductor component and method for operating same

Disc-shaped thyristor for a plurality of plated-through semiconduct...

Semiconductor component including a short-circuit structure

Semiconductor component including a short-circuit structure

Semiconductor component with optimized edge termination

Bipolar power semiconductor component comprising a p-type emitter a...

Semiconductor component and method for producing the same

Method for producing a stop zone in a semiconductor body and semico...

Method of fabricating a diode

Arrangement including a semiconductor device and a connecting element

Bipolar power semiconductor component comprising a p-type emitter a...

Diode

High speed diode

Method for the production of a buried stop zone in a semiconductor...

Thyristor with recovery protection

Method for producing a stop zone in a semiconductor body and semico...

Diode

Semiconductor component with a channel stop zone

Method for production of a buried stop zone in a semiconductor comp...

Semiconductor component and method for producing the same

Method for fabricating a semiconductor having a field zone

High-voltage diode

Power semiconductor component having a mesa edge termination

Method for producing a power semiconductor device with a stop zone

Power semiconductor component for high reverse voltages

Patents Applicationslast 30 patents

Power Semiconductor Component for Voltage Limiting, Arrangement Hav...

SHORT-CIRCUIT SEMICONDUCTOR COMPONENT AND METHOD FOR OPERATING SAME

SHORT-CIRCUIT SEMICONDUCTOR COMPONENT AND METHOD FOR OPERATING IT

IMPROVED DISC-SHAPED THYRISTOR FOR A PLURALITY OF PLATED-THROUGH SE...

SEMICONDUCTOR COMPONENT INCLUDING A SHORT-CIRCUIT STRUCTURE

SEMICONDUCTOR COMPONENT WITH OPTIMIZED EDGE TERMINATION

Bipolar Power Semiconductor Component Comprising a P-type Emitter a...

METHOD OF FABRICATING A DIODE

Method for Producing a Stop Zone in a Semiconductor Body and Semico...

SEMICONDUCTOR COMPONENT INCLUDING A SHORT-CIRCUIT STRUCTURE

THYRISTOR AND METHODS FOR PRODUCING A THYRISTOR

ARRANGEMENT INCLUDING A SEMICONDUCTOR DEVICE AND A CONNECTING ELEMENT

DIODE

Method for the Production of a Buried Stop Zone in a Semiconductor...

SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING THE SAME

Bipolar power semiconductor component comprising a p-type emitter a...

Thyristor with recovery protection

High speed diode

Diode

Semiconductor Component with a Channel Stop Zone

Method for Producing a Stop Zone in a Semiconductor Body and Semico...

Semiconductor component and method for producing the same

Method for fabricating field rings

Method for production of a buried stop zone in a semiconductor comp...

Thyristor component with improved blocking capabilities in the reve...

High-voltage diode and method for fabricating the high-voltage diode

Power semiconductor component for high reverse voltages