Richard A. Phelps

Person

Williamstown, VT, US

People

Patents Grantslast 30 patents

Information Patent Grant
Shallow trench isolation formation without planarization
- Patent number 10,163,679
- Issue date Dec 25, 2018
- GLOBALFOUNDRIES Inc.
- Siva P. Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI-MOSFET gate insulation layer with different thickness
- Patent number 9,978,849
- Issue date May 22, 2018
- GLOBALFOUNDRIES Inc.
- Michel J. Abou-Khalil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple back gate transistor
- Patent number 9,761,525
- Issue date Sep 12, 2017
- GLOBALFOUNDRIES Inc.
- Terence B. Hook
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air gaps formed by porous silicon removal
- Patent number 9,755,015
- Issue date Sep 5, 2017
- GLOBALFOUNDRIES Inc.
- Richard A. Phelps
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual shallow trench isolation (STI) structure for field effect tran...
- Patent number 9,595,579
- Issue date Mar 14, 2017
- GLOBALFOUNDRIES Inc.
- Natalie B. Feilchenfeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High resistivity substrate final resistance test structure
- Patent number 9,383,404
- Issue date Jul 5, 2016
- GLOBALFOUNDRIES Inc.
- Jeffrey P. Gambino
- G01 - MEASURING TESTING
Information Patent Grant
High voltage laterally diffused metal oxide semiconductor
- Patent number 9,059,276
- Issue date Jun 16, 2015
- International Business Machines Corporation
- Natalie B. Feilchenfeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stress enhanced LDMOS transistor to minimize on-resistance and main...
- Patent number 9,034,712
- Issue date May 19, 2015
- International Business Machines Corporation
- Renata Camillo-Castillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon controlled rectifier with stress-enhanced adjustable trigge...
- Patent number 8,946,799
- Issue date Feb 3, 2015
- International Business Machines Corporation
- Renata Camillo-Castillo
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Junction field effect transistor structure with P-type silicon germ...
- Patent number 8,921,172
- Issue date Dec 30, 2014
- International Business Machines Corporation
- Xuefeng Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compensation for a charge in a silicon substrate
- Patent number 8,828,746
- Issue date Sep 9, 2014
- International Business Machines Corporation
- Alan B. Botula
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Back-end-of-line metal-oxide-semiconductor varactors
- Patent number 8,809,155
- Issue date Aug 19, 2014
- International Business Machines Corporation
- John J. Ellis-Monaghan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolated zener diode, an integrated circuit incorporating multiple...
- Patent number 8,796,108
- Issue date Aug 5, 2014
- International Business Machines Corporation
- Frederick G. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric wedge JFET, related method and design structure
- Patent number 8,779,476
- Issue date Jul 15, 2014
- International Business Machines Corporation
- Xuefeng Liu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Junction field effect transistor structure with P-type silicon germ...
- Patent number 8,754,455
- Issue date Jun 17, 2014
- International Business Machines Corporation
- Xuefeng Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Noble gas implantation region in top silicon layer of semiconductor...
- Patent number 8,748,285
- Issue date Jun 10, 2014
- International Business Machines Corporation
- Alan B. Botula
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-on-insulator (SOI) structure configured for reduced harmoni...
- Patent number 8,709,903
- Issue date Apr 29, 2014
- International Business Machines Corporation
- Alan B. Botula
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-on-insulator (SOI) structure configured for reduced harmoni...
- Patent number 8,698,244
- Issue date Apr 15, 2014
- International Business Machines Corporation
- Alan B. Botula
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junction gate field effect transistor structure having n-channel
- Patent number 8,618,583
- Issue date Dec 31, 2013
- International Business Machines Corporation
- Panglijen Candra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stress enhanced LDMOS transistor to minimize on-resistance and main...
- Patent number 8,598,660
- Issue date Dec 3, 2013
- International Business Machines Corporation
- Renata Camillo-Castillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon controlled rectifier with stress-enhanced adjustable trigge...
- Patent number 8,586,423
- Issue date Nov 19, 2013
- International Business Machines Corporation
- Renata Camillo-Castillo
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Silicon-on-insulator (SOI) structure configured for reduced harmoni...
- Patent number 8,564,067
- Issue date Oct 22, 2013
- International Business Machines Corporation
- Alan B. Botula
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-on-insulator substrate and method of forming
- Patent number 8,536,035
- Issue date Sep 17, 2013
- International Business Machines Corporation
- Alan B. Botula
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor-on-insulator substrate and structure including multip...
- Patent number 8,492,294
- Issue date Jul 23, 2013
- International Business Machines Corporation
- Joseph R. Greco
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolated Zener diode
- Patent number 8,492,866
- Issue date Jul 23, 2013
- International Business Machines Corporation
- Frederick G. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric wedge JFET, related method and design structure
- Patent number 8,481,380
- Issue date Jul 9, 2013
- International Business Machines Corporation
- Xuefeng Liu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Silicon-on-insulator (SOI) structure configured for reduced harmoni...
- Patent number 8,471,340
- Issue date Jun 25, 2013
- International Business Machines Corporation
- Alan B. Botula
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric silicon-on-insulator (SOI) junction field effect transis...
- Patent number 8,466,501
- Issue date Jun 18, 2013
- International Business Machines Corporation
- Douglas B. Hershberger
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor-on-insulator substrate and structure including multip...
- Patent number 8,299,537
- Issue date Oct 30, 2012
- International Business Machines Corporation
- Joseph R. Greco
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method to create stress trench
- Patent number 8,242,584
- Issue date Aug 14, 2012
- International Business Machines Corporation
- Renata A. Camillo-Castillo
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SHALLOW TRENCH ISOLATION FORMATION WITHOUT PLANARIZATION
- Publication number 20180350659
- Publication date Dec 6, 2018
- GLOBALFOUNDRIES INC.
- Siva P. Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR USING SELECTIVE UNDERCUT AT GATE CONDUCTOR AND GATE INSU...
- Publication number 20180204926
- Publication date Jul 19, 2018
- GLOBALFOUNDRIES INC.
- Michel J. Abou-Khalil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AIR GAPS FORMED BY POROUS SILICON REMOVAL
- Publication number 20170330933
- Publication date Nov 16, 2017
- GLOBALFOUNDRIES INC.
- Richard A. Phelps
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR USING SELECTIVE UNDERCUT AT GATE CONDUCTOR AND GATE INSU...
- Publication number 20170186845
- Publication date Jun 29, 2017
- GLOBALFOUNDRIES INC.
- Michel J. Abou-Khalil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH RESISTIVITY SUBSTRATE FINAL RESISTANCE TEST STRUCTURE
- Publication number 20160161545
- Publication date Jun 9, 2016
- International Business Machines Corporation
- Jeffrey P. GAMBINO
- G01 - MEASURING TESTING
Information Patent Application
DUAL SHALLOW TRENCH ISOLATION (STI) FIELD EFFECT TRANSISTOR (FET) A...
- Publication number 20150255539
- Publication date Sep 10, 2015
- International Business Machines Corporation
- Natalie B. Feilchenfeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR
- Publication number 20140346597
- Publication date Nov 27, 2014
- Natalie B. Feilchenfeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL SHALLOW TRENCH ISOLATION (STI) FIELD EFFECT TRANSISTOR (FET) A...
- Publication number 20140327084
- Publication date Nov 6, 2014
- International Business Machines Corporation
- Natalie B. Feilchenfeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPENSATION FOR A CHARGE IN A SILICON SUBSTRATE
- Publication number 20140306325
- Publication date Oct 16, 2014
- Alan B. Botula
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JUNCTION FIELD EFFECT TRANSISTOR STRUCTURE WITH P-TYPE SILICON GERM...
- Publication number 20140235021
- Publication date Aug 21, 2014
- International Business Machines Corporation
- Xuefeng Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPENSATION FOR A CHARGE IN A SILICON SUBSTRATE
- Publication number 20140131800
- Publication date May 15, 2014
- International Business Machines Corporation
- Alan B. Botula
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACK-END-OF-LINE METAL-OXIDE-SEMICONDUCTOR VARACTORS
- Publication number 20140097434
- Publication date Apr 10, 2014
- International Business Machines Corporation
- John J. Ellis-Monaghan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS ENHANCED LDMOS TRANSISTOR TO MINIMIZE ON-RESISTANCE AND MAIN...
- Publication number 20140030861
- Publication date Jan 30, 2014
- International Business Machines Corporation
- Renata Camillo-Castillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON-ON-INSULATOR (SOI) STRUCTURE CONFIGURED FOR REDUCED HARMONI...
- Publication number 20140004687
- Publication date Jan 2, 2014
- International Business Machines Corporation
- Alan B. Botula
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Controlled Rectifier With Stress-Enhanced Adjustable Trigge...
- Publication number 20130313607
- Publication date Nov 28, 2013
- International Business Machines Corporation
- Renata Camillo-Castillo
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
ISOLATED ZENER DIODE, AN INTEGRATED CIRCUIT INCORPORATING MULTIPLE...
- Publication number 20130299938
- Publication date Nov 14, 2013
- Frederick G. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC WEDGE JFET, RELATED METHOD AND DESIGN STRUCTURE
- Publication number 20130299881
- Publication date Nov 14, 2013
- International Business Machines Corporation
- Xuefeng Liu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SILICON-ON-INSULATOR SUBSTRATE AND METHOD OF FORMING
- Publication number 20130196493
- Publication date Aug 1, 2013
- International Business Machines Corporation
- Alan B. Botula
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATED ZENER DIODE
- Publication number 20130175656
- Publication date Jul 11, 2013
- International Business Machines Corporation
- Frederick G. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON-ON-INSULATOR (SOI) STRUCTURE CONFIGURED FOR REDUCED HARMONI...
- Publication number 20130161618
- Publication date Jun 27, 2013
- International Business Machines Corporation
- Alan B. Botula
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOBLE GAS IMPLANTATION REGION IN TOP SILICON LAYER OF SEMICONDUCTOR...
- Publication number 20130134518
- Publication date May 30, 2013
- International Business Machines Corporation
- Alan B. Botula
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR-ON-INSULATOR SUBSTRATE AND STRUCTURE INCLUDING MULTIP...
- Publication number 20130005157
- Publication date Jan 3, 2013
- International Business Machines Corporation
- Joseph R. Greco
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Controlled Rectifier with Stress-Enhanced Adjustable Trigge...
- Publication number 20120326766
- Publication date Dec 27, 2012
- International Business Machines Corporation
- Renata Camillo-Castillo
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
STRESS ENHANCED LDMOS TRANSISTOR TO MINIMIZE ON-RESISTANCE AND MAIN...
- Publication number 20120306014
- Publication date Dec 6, 2012
- International Business Machines Corporation
- Renata Camillo-Castillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR STRUCTURE AND METHOD OF FORMING SAME
- Publication number 20120292669
- Publication date Nov 22, 2012
- International Business Machines Corporation
- Panglijen Candra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JUNCTION FIELD EFFECT TRANSISTOR STRUCTURE WITH P-TYPE SILICON GERM...
- Publication number 20120168820
- Publication date Jul 5, 2012
- International Business Machines Corporation
- Xuefeng Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC WEDGE JFET, RELATED METHOD AND DESIGN STRUCTURE
- Publication number 20120074469
- Publication date Mar 29, 2012
- International Business Machines Corporation
- Xuefeng Liu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
ASYMMETRIC SILICON-ON-INSULATOR (SOI) JUNCTION FIELD EFFECT TRANSIS...
- Publication number 20110284930
- Publication date Nov 24, 2011
- International Business Machines Corporation
- Douglas B. Hershberger
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
STRUCTURE AND METHOD TO CREATE STRESS TRENCH
- Publication number 20110156223
- Publication date Jun 30, 2011
- International Business Machines Corporation
- Renata A. Camillo-Castillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC JUNCTION FIELD EFFECT TRANSISTOR
- Publication number 20110147808
- Publication date Jun 23, 2011
- International Business Machines Corporation
- Frederick G. Anderson
- H01 - BASIC ELECTRIC ELEMENTS

Richard A. Phelps

Person

Patents Grantslast 30 patents

Shallow trench isolation formation without planarization

SOI-MOSFET gate insulation layer with different thickness

Multiple back gate transistor

Air gaps formed by porous silicon removal

Dual shallow trench isolation (STI) structure for field effect tran...

High resistivity substrate final resistance test structure

High voltage laterally diffused metal oxide semiconductor

Stress enhanced LDMOS transistor to minimize on-resistance and main...

Silicon controlled rectifier with stress-enhanced adjustable trigge...

Junction field effect transistor structure with P-type silicon germ...

Compensation for a charge in a silicon substrate

Back-end-of-line metal-oxide-semiconductor varactors

Isolated zener diode, an integrated circuit incorporating multiple...

Asymmetric wedge JFET, related method and design structure

Junction field effect transistor structure with P-type silicon germ...

Noble gas implantation region in top silicon layer of semiconductor...

Silicon-on-insulator (SOI) structure configured for reduced harmoni...

Silicon-on-insulator (SOI) structure configured for reduced harmoni...

Junction gate field effect transistor structure having n-channel

Stress enhanced LDMOS transistor to minimize on-resistance and main...

Silicon controlled rectifier with stress-enhanced adjustable trigge...

Silicon-on-insulator (SOI) structure configured for reduced harmoni...

Silicon-on-insulator substrate and method of forming

Semiconductor-on-insulator substrate and structure including multip...

Isolated Zener diode

Asymmetric wedge JFET, related method and design structure

Silicon-on-insulator (SOI) structure configured for reduced harmoni...

Asymmetric silicon-on-insulator (SOI) junction field effect transis...

Semiconductor-on-insulator substrate and structure including multip...

Structure and method to create stress trench

Patents Applicationslast 30 patents

SHALLOW TRENCH ISOLATION FORMATION WITHOUT PLANARIZATION

TRANSISTOR USING SELECTIVE UNDERCUT AT GATE CONDUCTOR AND GATE INSU...

AIR GAPS FORMED BY POROUS SILICON REMOVAL

TRANSISTOR USING SELECTIVE UNDERCUT AT GATE CONDUCTOR AND GATE INSU...

HIGH RESISTIVITY SUBSTRATE FINAL RESISTANCE TEST STRUCTURE

DUAL SHALLOW TRENCH ISOLATION (STI) FIELD EFFECT TRANSISTOR (FET) A...

HIGH VOLTAGE LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR

DUAL SHALLOW TRENCH ISOLATION (STI) FIELD EFFECT TRANSISTOR (FET) A...

COMPENSATION FOR A CHARGE IN A SILICON SUBSTRATE

JUNCTION FIELD EFFECT TRANSISTOR STRUCTURE WITH P-TYPE SILICON GERM...

COMPENSATION FOR A CHARGE IN A SILICON SUBSTRATE

BACK-END-OF-LINE METAL-OXIDE-SEMICONDUCTOR VARACTORS

STRESS ENHANCED LDMOS TRANSISTOR TO MINIMIZE ON-RESISTANCE AND MAIN...

SILICON-ON-INSULATOR (SOI) STRUCTURE CONFIGURED FOR REDUCED HARMONI...

Silicon Controlled Rectifier With Stress-Enhanced Adjustable Trigge...

ISOLATED ZENER DIODE, AN INTEGRATED CIRCUIT INCORPORATING MULTIPLE...

ASYMMETRIC WEDGE JFET, RELATED METHOD AND DESIGN STRUCTURE

SILICON-ON-INSULATOR SUBSTRATE AND METHOD OF FORMING

ISOLATED ZENER DIODE

SILICON-ON-INSULATOR (SOI) STRUCTURE CONFIGURED FOR REDUCED HARMONI...

NOBLE GAS IMPLANTATION REGION IN TOP SILICON LAYER OF SEMICONDUCTOR...

SEMICONDUCTOR-ON-INSULATOR SUBSTRATE AND STRUCTURE INCLUDING MULTIP...

Silicon Controlled Rectifier with Stress-Enhanced Adjustable Trigge...

STRESS ENHANCED LDMOS TRANSISTOR TO MINIMIZE ON-RESISTANCE AND MAIN...

FIELD EFFECT TRANSISTOR STRUCTURE AND METHOD OF FORMING SAME

JUNCTION FIELD EFFECT TRANSISTOR STRUCTURE WITH P-TYPE SILICON GERM...

ASYMMETRIC WEDGE JFET, RELATED METHOD AND DESIGN STRUCTURE

ASYMMETRIC SILICON-ON-INSULATOR (SOI) JUNCTION FIELD EFFECT TRANSIS...

STRUCTURE AND METHOD TO CREATE STRESS TRENCH

ASYMMETRIC JUNCTION FIELD EFFECT TRANSISTOR