Richard D. Sivan

Person

Austin, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Insulated gate semiconductor device and method of manufacture
- Patent number 5,541,132
- Issue date Jul 30, 1996
- Motorola, Inc.
- Robert B. Davies
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interconnection structure for conductive layers
- Patent number 5,408,130
- Issue date Apr 18, 1995
- Motorola, Inc.
- Michael P. Woo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for fabricating isolation regions in a semiconductor device
- Patent number 5,358,890
- Issue date Oct 25, 1994
- Motorola Inc.
- Richard D. Sivan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor SRAM with trench transistors
- Patent number 5,324,973
- Issue date Jun 28, 1994
- Motorola Inc.
- Richard D. Sivan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory cell having a trench structure
- Patent number 5,285,093
- Issue date Feb 8, 1994
- Motorola, Inc.
- Craig S. Lage
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming an interconnection structure for conductive layers
- Patent number 5,262,352
- Issue date Nov 16, 1993
- Motorola, Inc.
- Michael P. Woo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench capacitor and transistor structure and method for making the...
- Patent number 5,244,824
- Issue date Sep 14, 1993
- Motorola, Inc.
- Richard D. Sivan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a self-aligned vertical thin-film transistor in a...
- Patent number 5,229,310
- Issue date Jul 20, 1993
- Motorola, Inc.
- Richard D. Sivan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit memory device and structural layout thereof
- Patent number 5,198,683
- Issue date Mar 30, 1993
- Motorola, Inc.
- Richard D. Sivan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating MOS transistors using selective polysilicon d...
- Patent number 5,082,794
- Issue date Jan 21, 1992
- Motorola, Inc.
- James R. Pfiester
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a self-aligned bipolar transistor
- Patent number 5,061,646
- Issue date Oct 29, 1991
- Motorola, Inc.
- Richard D. Sivan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device with high density contacts
- Patent number 5,006,911
- Issue date Apr 9, 1991
- Motorola, Inc.
- Richard D. Sivan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS transistors using selective polysilicon deposition
- Patent number 4,984,042
- Issue date Jan 8, 1991
- Motorola, Inc.
- James R. Pfiester
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for elevated source/drain field effect structure
- Patent number 4,948,745
- Issue date Aug 14, 1990
- Motorola, Inc.
- James R. Pfiester
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned trench with selective trench fill
- Patent number 4,942,137
- Issue date Jul 17, 1990
- Motorola, Inc.
- Richard D. Sivan
- H01 - BASIC ELECTRIC ELEMENTS

Richard D. Sivan

Person

Patents Grantslast 30 patents

Insulated gate semiconductor device and method of manufacture

Interconnection structure for conductive layers

Process for fabricating isolation regions in a semiconductor device

Semiconductor SRAM with trench transistors

Semiconductor memory cell having a trench structure

Method for forming an interconnection structure for conductive layers

Trench capacitor and transistor structure and method for making the...

Method for making a self-aligned vertical thin-film transistor in a...

Integrated circuit memory device and structural layout thereof

Method of fabricating MOS transistors using selective polysilicon d...

Method for forming a self-aligned bipolar transistor

Transistor device with high density contacts

MOS transistors using selective polysilicon deposition

Process for elevated source/drain field effect structure

Self-aligned trench with selective trench fill