Richard HAMMOND

Person

Gwent, GB

People

Patents Grantslast 30 patents

Information Patent Grant
Electronic device with 2-dimensional electron gas between polar-ori...
- Patent number 11,757,008
- Issue date Sep 12, 2023
- IQE PLC
- Rytis Dargis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Localized strain fields in epitaxial layer over cREO
- Patent number 11,611,001
- Issue date Mar 21, 2023
- IQE PLC
- Andrew Clark
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated epitaxial metal electrodes
- Patent number 11,495,670
- Issue date Nov 8, 2022
- IQE PLC
- Rodney Pelzel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor material having tunable permittivity and tunable ther...
- Patent number 11,355,340
- Issue date Jun 7, 2022
- IQE PLC
- Richard Hammond
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Porous distributed Bragg reflectors for laser applications
- Patent number 11,201,451
- Issue date Dec 14, 2021
- IQE PLC
- Rich Hammond
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Porous semiconductor handle substrate
- Patent number 10,784,348
- Issue date Sep 22, 2020
- QUALCOMM Incorporated
- Stephen Alan Fanelli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Porous silicon dicing
- Patent number 10,700,012
- Issue date Jun 30, 2020
- QUALCOMM Incorporated
- Stephen Alan Fanelli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Re-based integrated photonic and electronic layered structures
- Patent number 10,605,987
- Issue date Mar 31, 2020
- IQE plc
- Andrew Clark
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal electrode with tunable work functions
- Patent number 10,418,457
- Issue date Sep 17, 2019
- IQE plc
- Rytis Dargis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Porous silicon post processing
- Patent number 10,134,837
- Issue date Nov 20, 2018
- QUALCOMM Incorporated
- Stephen Alan Fanelli
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
LAYERED STRUCTURE
- Publication number 20230245884
- Publication date Aug 3, 2023
- IQE plc
- Richard HAMMOND
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POROUS RF SWITCH FOR REDUCED CROSSTALK
- Publication number 20220254631
- Publication date Aug 11, 2022
- IQE plc
- Richard Hammond
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOCALIZED STRAIN FIELDS IN EPITAXIAL LAYER OVER cREO
- Publication number 20210320214
- Publication date Oct 14, 2021
- Andrew CLARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MATERIAL HAVING TUNABLE PERMITTIVITY AND TUNABLE THER...
- Publication number 20210020436
- Publication date Jan 21, 2021
- IQE plc
- Richard Hammond
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE WITH 2-DIMENSIONAL ELECTRON GAS BETWEEN POLAR-ORI...
- Publication number 20210005720
- Publication date Jan 7, 2021
- IQE PLC.
- Rytis Dargis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH HIGH CHARGE CARRIER MOBILITY MATERIALS ON...
- Publication number 20200266266
- Publication date Aug 20, 2020
- QUALCOMM lncorporated
- Sinan GOKTEPELI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RE-based Integrated Photonic and Electronic Layered Structures
- Publication number 20190227233
- Publication date Jul 25, 2019
- IQE plc
- Andrew Clark
- G02 - OPTICS
Information Patent Application
POROUS DISTRIBUTED BRAGG REFLECTORS FOR LASER APPLICATIONS
- Publication number 20190221993
- Publication date Jul 18, 2019
- IQE PLC.
- Rich Hammond
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH HIGH CHARGE CARRIER MOBILITY MATERIALS ON...
- Publication number 20190181218
- Publication date Jun 13, 2019
- QUALCOMM Incorporated
- Sinan GOKTEPELI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH STRAINED SILICON LAYERS ON POROUS SILICON
- Publication number 20190131454
- Publication date May 2, 2019
- QUALCOMM Incorporated
- Sinan GOKTEPELI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal Electrode With Tunable Work Functions
- Publication number 20190027574
- Publication date Jan 24, 2019
- Rytis Dargis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POROUS SILICON DICING
- Publication number 20180301419
- Publication date Oct 18, 2018
- QUALCOMM Incorporated
- Stephen Alan FANELLI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POROUS SEMICONDUCTOR HANDLE SUBSTRATE
- Publication number 20180277632
- Publication date Sep 27, 2018
- QUALCOMM Incorporated
- Stephen Alan FANELLI
- H01 - BASIC ELECTRIC ELEMENTS

Richard HAMMOND

Person

Patents Grantslast 30 patents

Electronic device with 2-dimensional electron gas between polar-ori...

Localized strain fields in epitaxial layer over cREO

Integrated epitaxial metal electrodes

Semiconductor material having tunable permittivity and tunable ther...

Porous distributed Bragg reflectors for laser applications

Porous semiconductor handle substrate

Porous silicon dicing

Re-based integrated photonic and electronic layered structures

Metal electrode with tunable work functions

Porous silicon post processing

Patents Applicationslast 30 patents

LAYERED STRUCTURE

POROUS RF SWITCH FOR REDUCED CROSSTALK

LOCALIZED STRAIN FIELDS IN EPITAXIAL LAYER OVER cREO

SEMICONDUCTOR MATERIAL HAVING TUNABLE PERMITTIVITY AND TUNABLE THER...

ELECTRONIC DEVICE WITH 2-DIMENSIONAL ELECTRON GAS BETWEEN POLAR-ORI...

SEMICONDUCTOR DEVICE WITH HIGH CHARGE CARRIER MOBILITY MATERIALS ON...

RE-based Integrated Photonic and Electronic Layered Structures

POROUS DISTRIBUTED BRAGG REFLECTORS FOR LASER APPLICATIONS

SEMICONDUCTOR DEVICE WITH HIGH CHARGE CARRIER MOBILITY MATERIALS ON...

SEMICONDUCTOR DEVICE WITH STRAINED SILICON LAYERS ON POROUS SILICON

Metal Electrode With Tunable Work Functions

POROUS SILICON DICING

POROUS SEMICONDUCTOR HANDLE SUBSTRATE